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1. 发明专利

JP2012033749A Semiconductor surface light emitting element, and method of manufacturing the same 有权
标题翻译：半导体表面发光元件及其制造方法
公开(公告)号：JP2012033749A
公开(公告)日：2012-02-16
申请号：JP2010172585
申请日：2010-07-30
申请人： Hamamatsu Photonics Kk , Kyoto Univ , 国立大学法人京都大学 , 浜松ホトニクス株式会社
发明人： HIROSE KAZUYOSHI , FURUTA SHINICHI , WATANABE AKIYOSHI , SUGIYAMA TAKAHIRO , SHIBATA TADATOKU , KUROSAKA YOSHITAKA , NODA SUSUMU
IPC分类号： H01S5/18
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor surface light emitting element and a method of manufacturing the same capable of improving characteristics.SOLUTION: A semiconductor surface light emitting element has: a photonic crystal layer 6 formed by forming a plurality of holes H in a basic layer 6A made of a first compound semiconductor having a zinc blende structure periodically, and growing a buried layer 6B having a zinc blende structure and made of a second compound semiconductor in the hole H; and an active layer 4 that supplies light to the photonic crystal layer 6. A lateral face of the hole has a {110} plane. The buried layer 6B has a projecting part HB1 protruded from at least one {110} plane that is an interface with the lateral face of the hole.
摘要翻译：要解决的问题：提供一种能够提高特性的半导体表面发光元件及其制造方法。解决方案：半导体表面发光元件具有：通过在由具有闪锌矿结构的第一化合物半导体构成的碱性层6A中周期性地形成多个孔H而形成的光子晶体层6，并且生长掩埋层6B 具有闪锌矿结构并由孔H中的第二化合物半导体制成; 以及向光子晶体层6提供光的有源层4.孔的侧面具有ä110}面。掩埋层6B具有从与孔的侧面接口的至少一个ä110}面突出的突出部分HB1。版权所有（C）2012，JPO＆INPIT

2. 发明专利

JP2009239093A Quantum cascade laser 审中-公开
标题翻译：量子CASCADE激光
公开(公告)号：JP2009239093A
公开(公告)日：2009-10-15
申请号：JP2008084339
申请日：2008-03-27
申请人： Hamamatsu Photonics Kk , 浜松ホトニクス株式会社
发明人： FUJITA KAZUMASA , EDAMURA TADATAKA , AKIKUSA NAOHIRO , SUGIYAMA ATSUSHI , OCHIAI TAKAHIDE , FURUTA SHINICHI
IPC分类号： H01S5/343
摘要： PROBLEM TO BE SOLVED: To provide a quantum cascade laser capable of operating with reduced power consumption, high efficiency and high output.
SOLUTION: The quantum cascade laser includes: a semiconductor substrate; and an active layer 15 which is provided on the semiconductor substrate, and in which a cascade structure is formed by laminating a unit laminate 16 comprising a light emitting layer 17 and an injection layer 18 in multistage. The subband level structure of the unit laminate 16 has a light emission upper level L
up , a light emission lower level L
low , and a relaxation mini band M. N well layers in the injection layer 18 are constituted so that the thickness of the n-th well layer, which is in the side of the last stage, becomes thinner than the thickness of the n-1st well layer. In the n-th well layer, an injection relaxation level L
2 is formed, which is the level of the mini band M with energy higher than a minimum relaxation level L
1 and lower than the light emission lower level L
low and is used for injection of electron to the latter light emitting layer, wherein wave function becomes maximum in the n-th well layer.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供能够以降低的功率消耗，高效率和高输出运行的量子级联激光器。解决方案：量子级联激光器包括：半导体衬底; 以及设置在半导体基板上的有源层15，其中通过层叠包括多层发光层17和注入层18的单元叠层体16而形成级联结构。单位层叠体16的子带层结构具有发光上层L 上，发光低层L 低，以及松弛迷你带M. N层在注入层18中，在最后一侧的第n阱层的厚度变得比n-1层的厚度薄。在第n阱层中，形成注入松弛度L 2 ，其中能量高于最小松弛度L 1 的微带M的电平并且低于发光低电平L 低，并且用于向后一发光层注入电子，其中波函数在第n阱层中变为最大值。版权所有（C）2010，JPO＆INPIT

3. 发明专利

JP2004083343A METHOD FOR PRODUCING β-FeSi2 FILM 有权
公开(公告)号：JP2004083343A
公开(公告)日：2004-03-18
申请号：JP2002247181
申请日：2002-08-27
申请人： Hamamatsu Photonics Kk , 浜松ホトニクス株式会社
发明人： SO JUSEI , SUGA HIROBUMI , FURUTA SHINICHI
IPC分类号： C01B33/06 , C30B29/52 , H01L21/203
摘要： PROBLEM TO BE SOLVED: To deposit a β-FeSi
2 film having high crystallinity on an Si substrate.
SOLUTION: The method is provided with a cleaning stage where an Si substrate is subjected to heating cleaning; an initial layer forming stage where an initial layer consisting of β-FeSi
2 is formed on the Si substrate at a first temperature; and a growing stage where the initial layer is grown at a second temperature higher than the first temperature. The first temperature is, e.g., 440 to 520°C. The second temperature is, e.g., 700 to 760°C. The β-FeSi
2 film having high crystallinity can be obtained by forming the initial layer at the relatively low temperature, and then growing the same at the temperature higher than that.
COPYRIGHT: (C)2004,JPO

4. 发明专利

JP2009123955A Quantum cascade laser 审中-公开
标题翻译：量子CASCADE激光
公开(公告)号：JP2009123955A
公开(公告)日：2009-06-04
申请号：JP2007296961
申请日：2007-11-15
申请人： Hamamatsu Photonics Kk , 浜松ホトニクス株式会社
发明人： FUJITA KAZUMASA , EDAMURA TADATAKA , AKIKUSA NAOHIRO , SUGIYAMA ATSUSHI , OCHIAI TAKAHIDE , FURUTA SHINICHI
IPC分类号： H01S5/343
摘要： PROBLEM TO BE SOLVED: To provide a quantum cascade laser which is reduced in power consumption and operates with high efficiency and high power.
SOLUTION: The quantum cascade laser includes a semiconductor substrate and an active layer 15 wherein a cascade structure provided on the substrate and having quantum well light emitting layers 17 and injection layers 18 stacked alternately is formed by stacking unit stacks 16 each comprising a quantum well light emitting layer 17 and an injection layer 18 in stages. Each of the unit stacks 16 has a light emission upper level L
UP , a light emission lower level L
low , and a relaxation miniband in its sub-band level structure. Further, n pieces of well layers of the injection layers 18 (n≥3) are provided in order from the well layer closest to the light emitting layer 17 as a first well layer up to an n-th well layer, and an m-th well layer is larger in layer thickness than an (m-1)-th well layer for an integer m set within a range of 2≤m≤n-1.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供降低功耗并以高效率和高功率运行的量子级联激光器。解决方案：量子级联激光器包括半导体衬底和有源层15，其中设置在衬底上并具有交替堆叠的量子阱发光层17和注入层18的级联结构通过堆叠单元堆叠16形成，每个单元叠层16包括量子阱发光层17和注入层18。每个单元堆16具有发光上电平L UP ，发光较低电平L 低，以及其子带电平结构中的松弛微型磁带。此外，从最靠近发光层17的阱层到第n阱层，依次设置n个注入层18（n≥3）的阱层，m- 对于在2≤m≤n-1的范围内设定的整数m，阱层的层厚度比第（m-1）阱层厚。版权所有（C）2009，JPO＆INPIT

5. 发明专利

JP2009054637A Quantum cascade laser device 有权
标题翻译：量子CASCADE激光器件
公开(公告)号：JP2009054637A
公开(公告)日：2009-03-12
申请号：JP2007217395
申请日：2007-08-23
申请人： Hamamatsu Photonics Kk , 浜松ホトニクス株式会社
发明人： SUGIYAMA ATSUSHI , OCHIAI TAKAHIDE , FUJITA KAZUMASA , AKIKUSA NAOHIRO , EDAMURA TADATAKA , FURUTA SHINICHI
IPC分类号： H01S5/12 , H01S5/227 , H01S5/343
CPC分类号： H01S5/12 , B82Y20/00 , H01S3/08031 , H01S5/0655 , H01S5/2272 , H01S5/3412 , H01S5/34366
摘要： PROBLEM TO BE SOLVED: To provide a DFB-type quantum cascade laser device capable of surely carrying out CW oscillation of single-mode light even at room temperature or at a temperature near it.
SOLUTION: In this quantum cascade laser device 1, because a top grating system with a diffraction grating 7 formed on a laminate 3 is adopted, the degradation of the temperature characteristic as a laser device or the deterioration of yield and reproducibility is suppressed as compared to an embedded grating system. Moreover, because the thickness of a clad layer 5 located between an active layer 4 and the diffraction grating 7 is in the range of 42±10% of the oscillating wavelength, it becomes possible to prevent that the seepage of light from the active layer 4 to the diffraction grating 7 becomes weak, or the leakage of light becomes large. Therefore, according to this quantum cascade laser device 1, the CW oscillation of single-mode light can be carried out even at room temperature or at a temperature near it.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供即使在室温或接近温度的情况下也能够可靠地执行单模光的CW振荡的DFB型量子级联激光装置。解决方案：在该量子级联激光装置1中，由于采用在层叠体3上形成的具有衍射光栅7的顶部光栅系统，因此抑制了作为激光装置的温度特性的劣化或成品率和再现性的劣化被抑制与嵌入式光栅系统相比。此外，由于位于有源层4和衍射光栅7之间的包覆层5的厚度在振荡波长的42±10％的范围内，因此可以防止来自有源层4的光的渗漏到衍射光栅7变弱，或者光的泄漏变大。因此，根据该量子级联激光装置1，即使在室温或其附近的温度下也可以进行单模光的CW振荡。版权所有（C）2009，JPO＆INPIT

6. 发明专利

JP2008218915A Quantum cascade laser element 审中-公开
标题翻译：量子CASCADE激光元件
公开(公告)号：JP2008218915A
公开(公告)日：2008-09-18
申请号：JP2007057666
申请日：2007-03-07
申请人： Hamamatsu Photonics Kk , 浜松ホトニクス株式会社
发明人： SUGIYAMA ATSUSHI , OCHIAI TAKAHIDE , FUJITA KAZUMASA , AKIKUSA NAOHIRO , EDAMURA TADATAKA , FURUTA SHINICHI
IPC分类号： H01S5/343
CPC分类号： H01S5/3402 , B82Y20/00 , H01S5/2214 , H01S5/2226 , H01S5/227 , H01S5/2275 , H01S2301/18
摘要： PROBLEM TO BE SOLVED: To provide a quantum cascade laser element which exhibits high slope efficiency and by which transverse mode can be stably unified.
SOLUTION: The quantum cascade laser element 1 is composed of a laminate 11 which is formed in a stripe shape along a predetermined direction on one major surface of a substrate 10, insulating layers 15 which are formed on both sides of the laminate 11, an insulating layer 16 and a metallic layer 17 which are formed in sequence on the laminate 11 and the insulating layers 15. The laminate 11 is composed of a clad layer 12, an active layer 13 and a clad layer 14 which are formed starting from the substrate 10. The active layer 13 is formed of light emitting layers and implanting layers which are alternatively stacked and generates light by transition of electrons between subbands in a quantum well structure. The cross-section shape of the laminate 11 perpendicular to the direction of extension of the laminate 11 is rectangular or inverse-mesa shape.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种表现出高斜率效率并且横向模式可以稳定地统一的量子级联激光元件。解决方案：量子级联激光元件1由在基板10的一个主表面上沿着预定方向形成为条状的层压体11，形成在层压体11的两侧的绝缘层15 ，层叠体11和绝缘层15依次形成的绝缘层16和金属层17.层叠体11由包层12，有源层13和覆盖层14构成，有源层13由发光层和注入层形成，交替层叠并且通过在量子阱结构中的子带之间的电子的过渡产生光。与层叠体11的延伸方向垂直的层叠体11的截面形状为矩形或倒台状。版权所有（C）2008，JPO＆INPIT

7. 发明专利

JP2003273468A Semiconductor laser array 审中-公开
标题翻译：半导体激光阵列
公开(公告)号：JP2003273468A
公开(公告)日：2003-09-26
申请号：JP2002073104
申请日：2002-03-15
申请人： Hamamatsu Photonics Kk , 浜松ホトニクス株式会社
发明人： FURUTA SHINICHI
IPC分类号： H01S5/323
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser array which exhibits small warp.
SOLUTION: This semiconductor laser array 10 is formed of a plurality of semiconductor laser elements. Each semiconductor laser array is formed by laminating a first clad layer 13, an active layer 14 and a second clad layer 17 on a substrate 12. A first compound semiconductor forming the substrate 12 is a binary compound semiconductor having a lattice constant and a thermal expansion coefficient which are larger than those of a second compound semiconductor forming the first clad layer 13. A third compound semiconductor forming the second compound semiconductor and active layer 14 is a ternary or a quaternary mixed-crystal semiconductor. The first, second and third compound semiconductor have composition ratios in which film thicknesses of the first clad layer 13 and active layer 14 and tensile distortions generated in the first clad layer 13 and active layer 14 under temperatures of 680 to 720°C satisfy a predetermined equation.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供显示出小的翘曲的半导体激光器阵列。解决方案：该半导体激光器阵列10由多个半导体激光元件形成。每个半导体激光器阵列通过在基板12上层叠第一包层13，有源层14和第二覆盖层17而形成。形成基板12的第一化合物半导体是具有晶格常数和热膨胀的二元化合物半导体系数大于形成第一包层13的第二化合物半导体的系数。形成第二化合物半导体和有源层14的第三化合物半导体是三元或四元混晶半导体。第一，第二和第三化合物半导体具有第一包层13和有源层14的膜厚度以及在680-720℃的温度下在第一包层13和有源层14中产生的拉伸失真的组成比满足预定的方程。版权所有（C）2003，JPO

8. 发明专利

JP2012033748A Semiconductor surface light emitting element, and method of manufacturing the same 有权
标题翻译：半导体表面发光元件及其制造方法
公开(公告)号：JP2012033748A
公开(公告)日：2012-02-16
申请号：JP2010172580
申请日：2010-07-30
申请人： Hamamatsu Photonics Kk , Kyoto Univ , 国立大学法人京都大学 , 浜松ホトニクス株式会社
发明人： HIROSE KAZUYOSHI , FURUTA SHINICHI , WATANABE AKIYOSHI , SUGIYAMA TAKAHIRO , SHIBATA TADATOKU , KUROSAKA YOSHITAKA , NODA SUSUMU
IPC分类号： H01S5/183
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor surface light emitting element and a method of manufacturing the same capable of improving characteristics.SOLUTION: A semiconductor surface light emitting element has: a photonic crystal layer 6 formed by forming a plurality of holes H in a basic layer 6A made of a first compound semiconductor having a zinc blende structure periodically, and growing a buried layer 6B having a zinc blende structure and made of a second compound semiconductor in the hole H; and an active layer 4 that supplies light to the photonic crystal layer 6. A main surface of the basic layer 6A is a (001) plane. A lateral face of the hole H has two different {100} planes.
摘要翻译：要解决的问题：提供一种能够提高特性的半导体表面发光元件及其制造方法。解决方案：半导体表面发光元件具有：通过在由具有闪锌矿结构的第一化合物半导体构成的碱性层6A中周期性地形成多个孔H而形成的光子晶体层6，并且生长掩埋层6B 具有闪锌矿结构并由孔H中的第二化合物半导体制成; 以及向光子晶体层6供给光的有源层4.基层6A的主表面为（001）面。孔H的侧面具有两个不同的ä100}平面。版权所有（C）2012，JPO＆INPIT

9. 发明专利

JP2012033747A Semiconductor surface light emitting element, and method of manufacturing the same 有权
标题翻译：半导体表面发光元件及其制造方法
公开(公告)号：JP2012033747A
公开(公告)日：2012-02-16
申请号：JP2010172578
申请日：2010-07-30
申请人： Hamamatsu Photonics Kk , Kyoto Univ , 国立大学法人京都大学 , 浜松ホトニクス株式会社
发明人： HIROSE KAZUYOSHI , FURUTA SHINICHI , WATANABE AKIYOSHI , SUGIYAMA TAKAHIRO , SHIBATA TADATOKU , KUROSAKA YOSHITAKA , NODA SUSUMU
IPC分类号： H01S5/183
CPC分类号： H01S5/3013 , B82Y20/00 , G02B6/1225 , H01L33/005 , H01L2933/0083 , H01S5/105 , H01S5/18 , H01S5/3202 , H01S5/3432 , H01S2304/04
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor surface light emitting element and a method of manufacturing the same capable of improving characteristics.SOLUTION: A semiconductor surface light emitting element has: a photonic crystal layer 6 formed by forming a plurality of holes H in a basic layer 6A made of a first compound semiconductor having a zinc blende structure periodically, and growing a buried layer 6B having a zinc blende structure and made of a second compound semiconductor in the hole H; and an active layer 4 that supplies light to the photonic crystal layer 6. A main surface of the basic layer 6A is a (001) plane. A lateral face of the hole H has at least three different {100} planes.
摘要翻译：要解决的问题：提供一种能够提高特性的半导体表面发光元件及其制造方法。解决方案：半导体表面发光元件具有：通过在由具有闪锌矿结构的第一化合物半导体构成的碱性层6A中周期性地形成多个孔H而形成的光子晶体层6，并且生长掩埋层6B 具有闪锌矿结构并由孔H中的第二化合物半导体制成; 以及向光子晶体层6供给光的有源层4.基层6A的主表面为（001）面。孔H的侧面具有至少三个不同的ä100}平面。版权所有（C）2012，JPO＆INPIT

10. 发明专利

JP2002158403A SEMICONDUCTOR LASER DIODE 失效
公开(公告)号：JP2002158403A
公开(公告)日：2002-05-31
申请号：JP2000353178
申请日：2000-11-20
申请人： HAMAMATSU PHOTONICS KK
发明人： FURUTA SHINICHI
IPC分类号： H01S5/323
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser diode of high optical output. SOLUTION: In this semiconductor laser diode(LD) 1, an n-type clad layer 3, an optical guide layer 4, an active layer 5, an optical guide layer 6, a p-type clad layer 7, and a contact layer 8 are sequentially formed on an n-type GaAs substrate 2. The active layer 5 comprises InGaAsP which lattice-matches with the n-type GaAs substrate 2 while the p-type clad layer 7 comprises AlGaInP which lattice-matches with the n-type GaAs substrate 2. Since the relation 0.75×D

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