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21. 发明专利

JPS63193529A CLEANING AND DRYING APPARATUS FOR SEMICONDUCTOR WAFER 失效
公开(公告)号：JPS63193529A
公开(公告)日：1988-08-10
申请号：JP2573387
申请日：1987-02-06
申请人： TOSHIBA CORP
发明人： MIYASHITA MORIYA
IPC分类号： B08B3/02 , B04B3/00 , H01L21/304
摘要： PURPOSE:To obtain the stable operation of a semiconductor wafer at a high speed rotation, by attaching a balancer, which holds the orientation flat of the wafer, to a mechanical chuck. CONSTITUTION:Wafer chucks 12 are turned with a motor 16 as a driving source through a rotary shaft 15. Nozzles 19a and 19b are provided in the obliquely upward and downward directions from a wafer 11 in rinsing chamber 17. At this time, one of the wafer chucks 12 holds the orientation flat 13 of the wafer 11. A balancer 14 is attached to this part. The weight of the balancer 14 is within + or -10% of the weight loss due to the formation of the main flat in correspondence with the diameter of the wafer 11. with the wafer 11 being rotated at 3,000 revolutions/min, liquid, in which hydrofluoric acid is dillued with pure water by 200 times, is sprayed on both surfaces of the wafer 11 for 10 seconds. Thus the stable operation of the wafer at the high speed rotation is obtained.

22. 发明专利

JPS61251747A STANDARD SAMPLE FOR EVALUATION PULVEROUS PARTICLE 失效
公开(公告)号：JPS61251747A
公开(公告)日：1986-11-08
申请号：JP9285885
申请日：1985-04-30
申请人： TOSHIBA CORP
发明人： OGINO MASANOBU , MIYASHITA MORIYA
IPC分类号： G01N15/00 , G01N1/00 , G01N15/02
摘要： PURPOSE:To obtain a standard sample which makes possible the exact control of a pulverous particle measuring imstrument by sticking pulverous particles to a substrate and covering the particle-sticking surface with a transparent film. CONSTITUTION:The standard sample is prepd. by sticking the pulverous particles 2 onto the semiconductor substrate 1 and covering the particle-sticking surface thereof with the transparent film 5. The substrate 1 is, for example, a silicon wafer and the pulverous particles 2 are, for example, abrasive particles of SiO2. The transparent film 5 is obtd. by coating a polyamic acid by using a coating machine called spinner and baking the same for the prescribed time in an N2 atmosphere kept at a prescribed temp. to polymerize the polyamic acie thereby forming the transparent polyamide film to about 2mum on the abrasive SiO2 particle-sticking surface. The same number of particles and distribution conditions are thereby obtd. simply by washing and therefore the exact control of the pulverous particle measuring instrument is made possible.

23. 发明专利

JPS61247937A UNDERWATER COLLECTOR 失效
公开(公告)号：JPS61247937A
公开(公告)日：1986-11-05
申请号：JP9020685
申请日：1985-04-26
申请人： TOSHIBA CORP
发明人： MIYASHITA MORIYA
IPC分类号： G01N1/22
摘要： PURPOSE:To collect a sample in a short time and to discriminate the size of a minute particle entering into the pure water by providing an outside vessel storing a vessel containing the pure water and introducing positively the air of objective space to be analyzed therein and providing a filter on an air intake port of the outside vessel. CONSTITUTION:The vessel 1 containing the pure water 2 is stored in the outside vessel 3. The top of this outside vessel 3 is open and the filter 4 is fitted thereto and besides, a discharge port 5 is provided to the side and a wind discharging means 6 such as the vacuum piping or a vacuum pump is connected with the discharge port 5. Here, the filter 4 to prevent from passing of a minute article over 0.3[mum] is used. The vessel 1 containing the pure water and the outside vessel 3 are constituted of 'Tefuron(R)' easy for cleaning respectively but glass or the like may be used for the material.

24. 发明专利

JP2007227953A Semiconductor wafer, manufacturing method thereof, method and device for manufacturing semiconductor device 有权
标题翻译：半导体晶体管及其制造方法，制造半导体器件的方法和器件
公开(公告)号：JP2007227953A
公开(公告)日：2007-09-06
申请号：JP2007096900
申请日：2007-04-02
申请人： Toshiba Corp , 株式会社東芝
发明人： IWASE MASAO , NITTA SHINICHI , MIYASHITA MORIYA , SUGAMOTO JIYUNJI , YAMADA KOREI , NAGANO HAJIME , TANZAWA KATSUJIRO , UDO SUKEMUNE , NADAHARA SOICHI , TSUCHIYA NORIHIKO , MATSUSHITA HIROSHI , USHIKU YUKIHIRO , ARIKADO TSUNETOSHI , OKUMURA KATSUYA
IPC分类号： H01L21/02
摘要： PROBLEM TO BE SOLVED: To manufacture a semiconductor device of high throughput by suppressing variation in manufacture among wafers, using a circular wafer in which neither notch nor orientation flat is present. SOLUTION: A semiconductor wafer 60 comprises a wafer of which a first main surface on which a semiconductor element is formed is circular, a bevel part formed on the outer periphery of the wafer, and a reference ID mark 61 which is provided to the bevel part to show crystal orientation of the wafer. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：通过抑制晶片之间的制造变化来制造高通量的半导体器件，使用其中不存在凹口和取向平面的圆形晶片。解决方案：半导体晶片60包括其上形成有半导体元件的第一主表面是圆形的晶片，形成在晶片的外周上的斜面部分和参考ID标记61，斜面部分显示晶片的晶体取向。版权所有（C）2007，JPO＆INPIT

25. 发明专利

JP2002368050A Method and equipment for measuring organic matter on surface of semiconductor substrate 审中-公开
标题翻译：用于测量半导体衬底表面有机物的方法和设备
公开(公告)号：JP2002368050A
公开(公告)日：2002-12-20
申请号：JP2001171876
申请日：2001-06-07
申请人： Toshiba Corp , Toshiba Microelectronics Corp , 東芝マイクロエレクトロニクス株式会社 , 株式会社東芝
发明人： ITO AKIKO , KATANO MAKIKO , MIYASHITA MORIYA , TOYOMARU YOKO
IPC分类号： G01N27/00 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To measure the quantity of organic matters adhering onto the surface of a semiconductor substrate locally.
SOLUTION: In the method for measuring the quantity of organic matters on the surface of a semiconductor substrate, surface static charges Qss generated by irradiating the surface of the semiconductor substrate with light are measured and after removing the organic matters on the surface of the semiconductor substrate 14, surface static charges Qss' on the surface of the semiconductor substrate 14 are measured similarly to the previous time. The quantity of organic matters adhering to the surface of the semiconductor substrate 14 can be determined from the difference between the Qss and Qss'. Since the Qss can be measured at a pitch of 15 mm, for example, the quantity of organic matters adhering to the surface of the semiconductor substrate can be measured locally.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：局部测量附着在半导体基板的表面上的有机物质的量。解决方案：在用于测量半导体衬底表面上的有机物质量的方法中，测量通过用光照射半导体衬底的表面产生的表面静电电荷Qss，并且在去除半导体衬底的表面上的有机物质之后如图14所示，与上一次类似地测量半导体衬底14的表面上的表面静电电荷Qss'。附着于半导体基板14的表面的有机物的量可以根据Qss和Qss'之间的差来确定。由于可以以15mm的间距测定Qss，所以例如可以局部地测定附着在半导体基板的表面的有机物的量。

26. 发明专利

JPH09283529A MANUFACTURE AND INSPECTION OF SEMICONDUCTOR SUBSTRATE 失效
公开(公告)号：JPH09283529A
公开(公告)日：1997-10-31
申请号：JP3211197
申请日：1997-02-17
申请人： TOSHIBA MICRO ELECTRONICS , TOSHIBA CORP
发明人： MIYASHITA MORIYA , OGINO MASANOBU , HOSHI TADAHIDE , NUMANO MASAKUNI , SAMATA SHUICHI , SEKIHARA AKIKO , AKITA KEIKO
IPC分类号： H01L21/66 , H01L21/322
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor substrate which denuded zone(DZ) layer deep enough to prevent adverse influences to device characteristics is formed while avoiding a high-temperature annealing process at the time of manufacturing a semiconductor device with use wafer, and also to provide a method for suitably inspecting a density of oxygen precipitation (BMD) in the semiconductor substrate. SOLUTION: In the semiconductor substrate manufacturing method, oxygen precipitation nuclei are precipitated for a silicon single crystal having a region containing a first concentration of boron exceeding a predetermined value within a predetermined region on one major surface side, or oxygen precipitations are grown from the oxygen precipitation nuclei. Next, the substrate is annealed in a temperature range which is higher than a temperature of a first annealing step, sufficiently higher to reduce the oxygen precipitation nuclei or the oxygen precipitations grown therefrom and sufficiently lower to such an extent that boron re-distribution does not affect the oxygen precipitations to form a predetermined depth of denuded layer within the predetermined zone on one major surface side. The semiconductor substrate inspecting method further includes a step of measuring a density of odes of the oxygen precipitations grown from the oxygen precipitation nuclei precipitated within the silicon single crystal, following the above annealing process.

27. 发明专利

JPH0298928A CLEANING OF SEMICONDUCTOR SUBSTRATE 失效
公开(公告)号：JPH0298928A
公开(公告)日：1990-04-11
申请号：JP25125688
申请日：1988-10-05
申请人： TOSHIBA CORP
发明人： MIYASHITA MORIYA , YOSHII SHINTARO
IPC分类号： B08B7/00 , G03F7/42 , H01L21/304
摘要： PURPOSE:To prevent the surface of a substrate from being contaminated and to realize a safe operation by a method wherein an extraction tank as a high- pressure container for substrate cleaning use and a heater used to heat the inside of the extraction tank are installed and a gas at a critical temperature or higher and at a critical pressure or higher is used. CONSTITUTION:A substrate 2 is arranged inside an extraction tank 1; a temperature of the extraction tank 1 is raised to 400 deg.C; carbon dioxide at 60 deg.C is introduced into the extraction tank 1 at a pressure of 400 atm. In this case, a critical temperature of the carbon dioxide is 31.06 deg.C and its critical pressure is 73.8 atm; the inside of the extraction tank 1 contains a supercritical gas. During this process, an outer wall of a separation tank 11 is cooled by using cooling water at 10 deg.C. Accordingly, an extracted organic substance is separated in the separation tank 11. When, e.g., a photoresist film coated on the substrate 2 in a photoetching process is stripped off, a silicon oxide film at 1000Angstrom is formed on a silicon substrate, an aluminum electrode thin film with a thickness of 1mum is evaporated on it and a test pattern where lines and spaces are repeated alternately is formed. After that, the resist is stripped off. Thereby, it is possible to prevent the surface of the substrate from being contaminated.

28. 发明专利

JPH01143218A PROCESSING OF SEMICONDUCTOR SUBSTRATE 失效
公开(公告)号：JPH01143218A
公开(公告)日：1989-06-05
申请号：JP30042187
申请日：1987-11-28
申请人： TOSHIBA CORP
发明人： MATSUSHITA YOSHIAKI , MIYASHITA MORIYA , WAKATSUKI MAKIKO , TSUCHIYA NORIHIKO , KUBOTA ATSUKO
IPC分类号： H01L21/304 , H01L21/306 , H01L21/322
摘要： PURPOSE:To form damage to the rear for fine gettering and allow a clearance process to be independent of some adverse effect, by immersing a substrate in a treating liquid and cleaning the surface of the substrate by causing ultrasonic waves to be propagated to the surface of its substrate through this treating liquid, thereby damaging the surface for use in gettering as well. CONSTITUTION:A treatment vessel 10 is filled with ultra-pure water and this device makes an ultrasonic wave generating part 12 operate to perform its treatment. In such a case, the output of ultrasonic waves are selected within a range 50-500W and their frequencies are selected within a range 10-100kHz. As the ultrasonic waves which are propagated in ultra-pure water abut on each wafer 14, damage is formed at both sides and simultaneously the surface is cleaned as well. When its output is less than 50W, the rear is not damaged and further, when it is more than 500W, damage to the rear becomes so large that such damage is not removed by merely polishing the face of a mirror later on and the oxidation inductive stacking fault(OSF) density of the surface side increases. In this way, as the rear damage for use in fine gettering is formed; besides, fine particles that stick to a wafer can be lessened to a minimum, a post-processing in succession to the above formation of the rear damage is not affected very much.

29. 发明专利

JPS637635A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS637635A
公开(公告)日：1988-01-13
申请号：JP14981786
申请日：1986-06-27
申请人： TOSHIBA CORP
发明人： MIYASHITA MORIYA
IPC分类号： H01L21/314
摘要： PURPOSE:To prevent deterioration of an MOS field effect type semiconductor device, by accumulating alkali metal ions and the like in the surface layer of an insulating film by corona charging, and removing the surface layer. CONSTITUTION: In corona charging, a semiconductor substrate 3 is mounted on a grounding plate 2 so that an SiO2 film 32 is directed toward a grid 1, and a DC voltage of -8,000 V is applied to the grid 1. Therefore, corona is charged on the surface of the SiO2 film 32, and the surface potential of -5 V is generated. At the same time, the grounding plate 2 is heated to 250 deg.C, and the temperature is kept for about 30 minutes. Then, Na ions in the SiO2 film, whose temperature is increased to said temperature, are moved readily and are attracted to the surface, which is negatively charged. Then, with the voltage being applied to the grid 1, the grounding plate 2 is cooled, and the temperature of a wafer is decreased to normal temperature. Then, the Na ions are accumulated in the surface of the SiO2 film 32, and a semiconductor substrate, in which said state is fixed, is obtained. Said wafer is immersed in treating liquid, in which, e.g., 30% hydroflouric acid is dilluted by 100 times. Thus the surface layer of the SiO2 film, in which the Na ions are accumulated, is removed by the thickness of about 20Angstrom .

30. 发明专利

JPS622546A DECOMPOSITION UNIT FOR SEMICONDUCTOR THIN FILM 失效
公开(公告)号：JPS622546A
公开(公告)日：1987-01-08
申请号：JP14023185
申请日：1985-06-28
申请人： TOSHIBA CORP , TOSHIBA MICRO CUMPUTER ENG
发明人： MIYASHITA MORIYA , SAKUMA KEIKO
IPC分类号： H01L21/306
摘要： PURPOSE:To realizeaa semiconductor film decomposing unit, small in size and easy to transport, capable of decomposing semiconductor thin film in a short time without exposing the testing personnel to the danger of hydrofluoric acid by a method wherein the vessel bottom is made of a plate of silver or the like so that the easily transmitted to the hydrofluoric acid in the vessel. CONSTITUTION:The bottom section of a closable vessel 6 serves as a sump for hydrofluoric acid L and the closable vessel 6 is installd on a planar heater 7. A semiconductor sustrate W provided with a thin film (f) is accommodated in a wafer carrier 9 housed in the closed vessel 6. A cover 6a is installed for the closure of the closable vessel 6, whereafter the heater 7 starts warming the bottom of the closable vessel 6 until the temperature reaches 80 deg.C. The thin film (f) is decomposed into liquid (l) in the presence of a quantity of hydrofluoric vapor originating in the hydrofluoric acid L. The liquid (l) collects in a pan 8. A drain/exhaust port 10 is coupled to a waste hydrofluoric acid tank with the intermediary of a pump. A valve 11 is then opened for the discharge for the hydrofluoric acid L out of the closable vessel 6, whereafter the closable vessel 6 is evacuated of the hydrofluoric vapor. With the planar heater 7 accelerating the generation of hydrofluoric vapor, the vapor pressure inside the closable vessel 6 promptly reaches saturation.

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