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11. 发明专利

JPH029468B2 失效
公开(公告)号：JPH029468B2
公开(公告)日：1990-03-02
申请号：JP3914484
申请日：1984-02-28
申请人： SHARP KK
发明人： YANO MORICHIKA , YAMAMOTO SABURO , MATSUI KANEKI , TANETANI MOTOTAKA
IPC分类号： H01S5/00 , H01S5/223 , H01S5/40

12. 发明专利

JPS6345878A SEMICODUCTOR LASER ARRAY DEVICE 失效
公开(公告)号：JPS6345878A
公开(公告)日：1988-02-26
申请号：JP19033686
申请日：1986-08-13
申请人： SHARP KK
发明人： YANO MORICHIKA , MATSUI KANEKI , MATSUMOTO AKIHIRO
IPC分类号： H01S5/00 , H01S5/40
摘要： PURPOSE:To enable a laser array device to oscillate with stability even up to a high power by a method wherein narrow stripes are formed between wide stripes on a laser array, the narrow stripes function only as regions for optical coupling, and the wide stripes are coupled to each other at a 0 deg. phase. CONSTITUTION:On a crystal layer formed in direct contact with a substrate 11, wide first stripe grooves 1a-na and narrow second stripe grooves 1b-nb are arranged alternately. The first stripe grooves 1a-na are formed so deep as to penetrate a crystal layer 12 and their bottoms reach the substrate 11. The second stripe grooves 1b-nb have their bottoms within the crystal layer 12. There are 180 deg. differences in phase between the electric fields corresponding to the first stripe grooves 1a-na and those corresponding to the second stripe grooves 1b-nb. With no currents supplied to the second stripe grooves 1b-nh because of their failure to reach the substrate 11, the electric field involving the second stripe grooves 1b-nb is negligible in amplitude as compared with that involving the first stripe grooves 1a-na.

13. 发明专利

JPS61203693A SEMICONDUCTOR LASER 失效
公开(公告)号：JPS61203693A
公开(公告)日：1986-09-09
申请号：JP4566785
申请日：1985-03-06
申请人： SHARP KK
发明人： YANO MORICHIKA , YAMAMOTO SABURO , MATSUI KANEKI , HAYASHI HIROSHI
IPC分类号： H01S5/00 , H01S5/10 , H01S5/20 , H01S5/223 , H01S5/24 , H01S5/30 , H01S5/323
摘要： PURPOSE:To exceedingly reduce a coherency and to obtain the sufficient stability to the return light by enlarging a width of oscillation spectrum by sandwiching the central active layer with the outer active layers having a refractive index slightly different from that of said central active layer. CONSTITUTION:Among the active layers 4-6, the central active layer 6 has a P-type impurity concentration which makes the refractive index larger than the outer active layers 4 and 6 by the 10 level. In the semiconductor laser of VSIS structure comprising such active layers 4-6, it can be recognized that the distribution of light intensity on a resonance surface oscillates within the distribution of a light emission region R by decomposing the light into spectra and measuring the light intensity. The laser thus obtained has a spectrum of 100GHz width and the exceeding reduction of coherency is attained and the extreme stability to the return light is obtained.

14. 发明专利

JPS60206081A SEMICONDUCTOR LASER DEVICE 失效
公开(公告)号：JPS60206081A
公开(公告)日：1985-10-17
申请号：JP6228784
申请日：1984-03-29
申请人： SHARP KK
发明人： YANO MORICHIKA , YAMAMOTO SABUROU , TAKIGUCHI HARUHISA , KANEIWA SHINJI
IPC分类号： H01S5/00 , H01S5/02 , H01S5/24 , H01S5/323
摘要： PURPOSE:To reduce oscillation-starting current by a method wherein the lattice constants of the substrate crystal and each layer are made approx. coincident with each other, and each of energy differences between the direct transition and indirect transition of an active layer and between the active layer and a clad layer is set at over a fixed value. CONSTITUTION:p Type and n type In0.16Ga0.48 layers 2 and 3 are grown on a p type GaAs substrate 1. In this case, the gap of lattice constant between the substrate 1 and the layer 2 is relaxed by gradual access to the composition of the layer 2 from GaAs. Next, a stripe 7 is formed on this water. Using the wafer thus processed, a double hetero structure is formed by growing the clad layer 4 made of p type In0.64Al0.36P, activae layer 5 made of In0.65Ga0.35P, and clad layer 6 made of n type In0.64Al0.36P. The titled device having such a structure gets the energy difference between direct transition and indirect transition and that between the layers 5 and 4 or 6 become 0.2eV or more. Then, this semiconductor device becomes smaller in oscillation-starting current and longer in service lifetime.

15. 发明专利

JPS60182790A SEMICONDUCTOR LASER ARRAY DEVICE 失效
公开(公告)号：JPS60182790A
公开(公告)日：1985-09-18
申请号：JP4073584
申请日：1984-02-29
申请人： SHARP KK
发明人： YANO MORICHIKA , YAMAMOTO SABUROU , MATSUI KANEKI , TANETANI MOTOTAKA
IPC分类号： H01S5/00 , H01S5/40
摘要： PURPOSE:To perform laser oscillation of stable mode at high output by outputting laser beams synchronized at 0 deg. phase from alternate stripes by a method wherein the difference in phase between each laser action part of the titled device is selected by a resonator and a reflectance. CONSTITUTION:A plurality of stripe current paths are disposed in an array in a polycrystalline layer for laser action, and laser action parts 1, 2, 3... are arranged in parallel. Distributed Bragg reflectors 2', 4'... are formed at one ends of the resonators of action parts 2, 4... at the even-numbered stages of the action parts 1, 2, 3... of this parallel arrangement in a holographical manner. On the other hand, resonance surfaces by reactive ion etching are formed at one ends of the action parts 1, 3... at the odd-numbered stages, and then coated with a dielectric permeable film 001. The oscillation threshold value of resonance surfaces is decreased by coating the other resonance surfaces of the action parts 1, 2, 3... at the even- and odd-numbered stages with a multilayer film 002 of high reflactance made of Al2O3 and SiO2. Then, laser oscillation of stable mode is performed at high output by 180 deg.-inversion of the distribution of electric intensity of the action parts 1, 3... and 2', 4'....

16. 发明专利

JPS60119787A SEMICONDUCTOR LASER ELEMENT AND MANUFACTURE THEREOF 失效
公开(公告)号：JPS60119787A
公开(公告)日：1985-06-27
申请号：JP22812483
申请日：1983-11-30
申请人： SHARP KK
发明人： YAMAMOTO SABUROU , HAYASHI HIROSHI , MORIMOTO TAIJI , YANO MORICHIKA
IPC分类号： H01S5/00 , H01S5/223
摘要： PURPOSE:To form a striped structure less than about 2mum and to obtain a high power laser element by a method wherein striped structures are formed with a growth layer for the interception of the current of the reverse conductivity type which buries parallel striped grooves formed in a base plate and a current passage area in which a growth layer on the groove is removed. CONSTITUTION:A resist film 20 is coated on the surface of a GaAs base plate 13, and two of striped windows of the determined width are formed. Subsequently, striped grooves 15, 16 are formed by etching the base plate 13 using a film 20 as mask. The depth of said grooves 15, 16 are made to the determined value, and the width of the mounted part 17 is made narrow. The growth layer 14 for the interception of the current is grown to the determined width between the base plate 13 and the reverse conductivity layer after removing the film 20. After that the striped groove 18 with the width W=8mum is formed so as to mounted part 17 becomes to the center. The growth layer 14 corresponding to the grooves 15, 16 is removed from th base plate 13 by finishing said groove 18, and the striped structure less than about 2mum is formed by making the current passage area by exposing the surface of the base plate 13.

17. 发明专利

JPS6023519B2 失效
公开(公告)号：JPS6023519B2
公开(公告)日：1985-06-07
申请号：JP2029780
申请日：1980-02-19
申请人： SHARP KK
发明人： YANO MORICHIKA , YAMAMOTO SABURO , KURATA YUKIO , MATSUI KANEKI , HAYAKAWA TOSHIRO , TAKIGUCHI HARUHISA
IPC分类号： H01L21/208 , H01S5/00 , H01S5/30

18. 发明专利

JPS6023518B2 失效
公开(公告)号：JPS6023518B2
公开(公告)日：1985-06-07
申请号：JP1463580
申请日：1980-02-05
申请人： SHARP KK
发明人： YAMAMOTO SABURO , MURATA KAZUHISA , HAYASHI HIROSHI , TAKENAKA TAKUO , YANO MORICHIKA
IPC分类号： H01S5/00 , H01S5/042 , H01S5/062 , H01S5/223 , H01S5/24

19. 发明专利

JPS59141B2 JPS59141B2 - 失效
公开(公告)号：JPS59141B2
公开(公告)日：1984-01-05
申请号：JP11834079
申请日：1979-09-13
申请人： Sharp Kk
发明人： KURATA YUKIO , YANO MORICHIKA , YAMAMOTO SABURO , MATSUI KANEKI , HAYAKAWA TOSHIRO
IPC分类号： H01L21/208 , H01S5/00 , H01S5/223
CPC分类号： H01S5/2238

20. 发明专利

JPS57159085A MANUFACTURE OF SEMICONDUCTOR LASER ELEMENT 失效
公开(公告)号：JPS57159085A
公开(公告)日：1982-10-01
申请号：JP17397181
申请日：1981-10-29
申请人： SHARP KK
发明人： YAMAMOTO SABUROU , YANO MORICHIKA , KOMURO AKIRA , KURATA YUKIO , MATSUI KANEKI
IPC分类号： H01L21/308 , H01L21/208 , H01S5/00 , H01S5/20 , H01S5/223
摘要： PURPOSE:To reduce the oscillation starting current value and to contrive the extension of life of the subject semiconductor laser element by a method wherein an interlayer solid phase diffusion of dopant, which was contained in the ohmic contact layer to be used for the formation of electrodes of double-hetero junction type GaAs laser formed by lamination, is performed on a grown layer. CONSTITUTION:The first layer 13, the second layer 14, the third layer 15, and the fourth layer 16 are formed by lamination on an N GaAs substrate 12. A stripe type etching is performed on the fourth layer 16. The fifth layer, whereon Zn was doped, for ohmic contact is grown on the layer 16, and when the crystal layer is maintaind in a low temperature for a fixed time, 0.3mum of the Zn of the fifth layer 18 is diffused to the fourth layer 16, and a dopant layer 19 is formed. A P-side electrode and an N-side electrode 21 are formed, and are used as a semiconductor laser element. As a result, the oscillation starting current is reduced, laser output characteristics are improved, and the life of the laser element can be extended.

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