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    • 9. 发明专利
    • SEMICONDUCTOR LASER ELEMENT
    • JPH0385785A
    • 1991-04-10
    • JP22339489
    • 1989-08-30
    • SHARP KK
    • MATSUMOTO AKIHIROHOSOBANE HIROYUKIMATSUI KANEKI
    • H01S5/00H01S5/042
    • PURPOSE:To prevent unstable operation from occurring where laser light intensity distribution is shifted horizontally even if the number of carries which are injected into an activation layer increases by providing a stripe-shaped part with a higher refractive index in the center of a stripe-shaped refractive index type waveguide path. CONSTITUTION:An n-Al0.33Ga0.67As first clad layer 2, a p-Al0.03Ga0.92As activation layer 3, and a p-Al0.33Ga0.67As second clad layer 4 are laminated on an n-GaAs substrate 1. A stripe-shaped first ridge 10 is formed at the second clad layer 4 and a stripe-shaped second ridge 11 is formed in the center of the first ridge 10. n-GaAs light absorption layers 6 with a smaller energy gap than the activation layer 3 is formed at both sides of the first ridge 10 on the second clad layer 4. An Al0.42Ga0.58As third clad layer 5 is formed on the light absorption layer 6 and on the first ridge 10 of the second clad layer 4. The third clad layer 5 has a smaller refractive index than that of the second clad layer 4.