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11. 发明专利

JP2013077756A Semiconductor laser element 有权
标题翻译：半导体激光元件
公开(公告)号：JP2013077756A
公开(公告)日：2013-04-25
申请号：JP2011217732
申请日：2011-09-30
申请人： Kyoto Univ , 国立大学法人京都大学 , Hamamatsu Photonics Kk , 浜松ホトニクス株式会社
发明人： NODA SUSUMU , HIROSE KAZUYOSHI , WATANABE AKIYOSHI , KUROSAKA YOSHITAKA , SUGIYAMA TAKAHIRO
IPC分类号： H01S5/18 , H01S5/22
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser element capable of outputting a laser beam with high efficiency.SOLUTION: The semiconductor laser element includes: a lower cladding layer B that is composed of a semiconductor; an upper cladding layer C that is composed of the semiconductor; and a core layer A that is sandwiched between the lower cladding layer B and the upper cladding layer C, is composed of a plurality of semiconductor layers that are stacked, and has a higher average refractive index than both of the lower cladding layer B and the upper cladding layer C. The core layer A includes an active layer 3B composed of a quantum well layer and a photonic crystal layer 4, the electric field intensity distribution in the thickness direction in the core layer A at the time of operating has two peaks, and the location of the valley between peaks is set to be in a region between the active layer 3B and the photonic crystal layer 4.
摘要翻译：要解决的问题：提供能够高效率地输出激光束的半导体激光元件。解决方案：半导体激光元件包括：由半导体构成的下包层B; 由半导体构成的上包层C; 并且夹在下包层B和上包层C之间的芯层A由堆叠的多个半导体层构成，并且具有比下包层B和下包层C均低的平均折射率芯层A包括由量子阱层和光子晶体层4构成的有源层3B，芯层A中的厚度方向的电场强度分布在工作时具有两个峰值，并且峰之间的谷的位置被设置在有源层3B和光子晶体层4之间的区域中。版权所有（C）2013，JPO和INPIT

12. 发明专利

JP2012033748A Semiconductor surface light emitting element, and method of manufacturing the same 有权
标题翻译：半导体表面发光元件及其制造方法
公开(公告)号：JP2012033748A
公开(公告)日：2012-02-16
申请号：JP2010172580
申请日：2010-07-30
申请人： Hamamatsu Photonics Kk , Kyoto Univ , 国立大学法人京都大学 , 浜松ホトニクス株式会社
发明人： HIROSE KAZUYOSHI , FURUTA SHINICHI , WATANABE AKIYOSHI , SUGIYAMA TAKAHIRO , SHIBATA TADATOKU , KUROSAKA YOSHITAKA , NODA SUSUMU
IPC分类号： H01S5/183
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor surface light emitting element and a method of manufacturing the same capable of improving characteristics.SOLUTION: A semiconductor surface light emitting element has: a photonic crystal layer 6 formed by forming a plurality of holes H in a basic layer 6A made of a first compound semiconductor having a zinc blende structure periodically, and growing a buried layer 6B having a zinc blende structure and made of a second compound semiconductor in the hole H; and an active layer 4 that supplies light to the photonic crystal layer 6. A main surface of the basic layer 6A is a (001) plane. A lateral face of the hole H has two different {100} planes.
摘要翻译：要解决的问题：提供一种能够提高特性的半导体表面发光元件及其制造方法。解决方案：半导体表面发光元件具有：通过在由具有闪锌矿结构的第一化合物半导体构成的碱性层6A中周期性地形成多个孔H而形成的光子晶体层6，并且生长掩埋层6B 具有闪锌矿结构并由孔H中的第二化合物半导体制成; 以及向光子晶体层6供给光的有源层4.基层6A的主表面为（001）面。孔H的侧面具有两个不同的ä100}平面。版权所有（C）2012，JPO＆INPIT

13. 发明专利

JP2012033747A Semiconductor surface light emitting element, and method of manufacturing the same 有权
标题翻译：半导体表面发光元件及其制造方法
公开(公告)号：JP2012033747A
公开(公告)日：2012-02-16
申请号：JP2010172578
申请日：2010-07-30
申请人： Hamamatsu Photonics Kk , Kyoto Univ , 国立大学法人京都大学 , 浜松ホトニクス株式会社
发明人： HIROSE KAZUYOSHI , FURUTA SHINICHI , WATANABE AKIYOSHI , SUGIYAMA TAKAHIRO , SHIBATA TADATOKU , KUROSAKA YOSHITAKA , NODA SUSUMU
IPC分类号： H01S5/183
CPC分类号： H01S5/3013 , B82Y20/00 , G02B6/1225 , H01L33/005 , H01L2933/0083 , H01S5/105 , H01S5/18 , H01S5/3202 , H01S5/3432 , H01S2304/04
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor surface light emitting element and a method of manufacturing the same capable of improving characteristics.SOLUTION: A semiconductor surface light emitting element has: a photonic crystal layer 6 formed by forming a plurality of holes H in a basic layer 6A made of a first compound semiconductor having a zinc blende structure periodically, and growing a buried layer 6B having a zinc blende structure and made of a second compound semiconductor in the hole H; and an active layer 4 that supplies light to the photonic crystal layer 6. A main surface of the basic layer 6A is a (001) plane. A lateral face of the hole H has at least three different {100} planes.
摘要翻译：要解决的问题：提供一种能够提高特性的半导体表面发光元件及其制造方法。解决方案：半导体表面发光元件具有：通过在由具有闪锌矿结构的第一化合物半导体构成的碱性层6A中周期性地形成多个孔H而形成的光子晶体层6，并且生长掩埋层6B 具有闪锌矿结构并由孔H中的第二化合物半导体制成; 以及向光子晶体层6供给光的有源层4.基层6A的主表面为（001）面。孔H的侧面具有至少三个不同的ä100}平面。版权所有（C）2012，JPO＆INPIT

14. 发明专利

JP2014175488A Laser device 有权
标题翻译：激光装置
公开(公告)号：JP2014175488A
公开(公告)日：2014-09-22
申请号：JP2013047125
申请日：2013-03-08
申请人： Kyoto Univ , 国立大学法人京都大学 , Hamamatsu Photonics Kk , 浜松ホトニクス株式会社
发明人： WATANABE AKIYOSHI , HIROSE KAZUYOSHI , KUROSAKA YOSHITAKA , SUGIYAMA TAKAHIRO , NODA SUSUMU
IPC分类号： H01S5/18 , H01S5/026
CPC分类号： H01S5/0092 , G02F1/3544 , G02F1/3551 , G02F1/3558 , G02F1/37 , G02F2001/3548 , H01S5/02248 , H01S5/02446 , H01S5/105 , H01S5/18 , H01S5/187
摘要： PROBLEM TO BE SOLVED: To provide a laser device producing a Gaussian distribution point-shaped beam having a remarkably strong light intensity, by wavelength conversion using a nonlinear optical crystal.SOLUTION: A laser device includes a nonlinear optical crystal NL having a period polarization inversion structure on which laser light emitted from a photonic crystal surface emission laser element LD impinges. The different refractive index region 6B of a photonic crystal layer is arranged at the grating point position of a square grating. When the planar shape of each different refractive index region 6B is substantially rectangular equilateral triangle, two sides constituting the right angle extend along the longitudinal and lateral grid lines of a square grating, and the orientation parallel with or perpendicular to the hypotenuse of the triangle matches the orientation of polarization in the period polarization inversion structure of the nonlinear optical crystal NL.
摘要翻译：要解决的问题：提供一种通过使用非线性光学晶体的波长转换来制造具有非常强的光强度的高斯分布点状光束的激光装置。解决方案：激光装置包括具有周期偏振反转的非线性光学晶体NL 从光子晶体表面发射激光元件LD发射的激光照射的结构。光子晶体层的不同折射率区域6B布置在正方形光栅的光栅点位置。当每个不同折射率区域6B的平面形状基本上是矩形的等边三角形时，构成直角的两边沿着正方形光栅的纵向和横向网格线延伸，并且与三角形的斜边平行或垂直的取向匹配非线性光学晶体NL的周期极化反转结构中的极化取向。

15. 发明专利

JP2014082263A Semiconductor laser element 有权
标题翻译：半导体激光元件
公开(公告)号：JP2014082263A
公开(公告)日：2014-05-08
申请号：JP2012228085
申请日：2012-10-15
申请人： Kyoto Univ , 国立大学法人京都大学 , Hamamatsu Photonics Kk , 浜松ホトニクス株式会社
发明人： KUROSAKA YOSHITAKA , WATANABE AKIYOSHI , HIROSE KAZUYOSHI , SUGIYAMA TAKAHIRO , NODA SUSUMU
IPC分类号： H01S5/12 , H01S5/22
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser element and a laser beam deflector, capable of emitting a laser beam in a prescribed direction and changing an emission direction thereof.SOLUTION: A semiconductor laser element comprises: a lower clad layer; an upper clad layer; an active layer interposed between the lower clad layer and the upper clad layer; a photonic crystal layer interposed between the active layer and at least one of the upper clad layer and the lower clad layer; and a plurality of drive electrodes E2 for supplying driving current to a plurality of regions in the active layer. This laser element generates a laser beam in the plurality of regions by supplying driving current. The plurality of drive electrodes E2 include a first drive electrode and a second drive electrode which are adjacent to each other. The first drive electrode and the second drive electrode include a first electrode part E21 extending in a longitudinal direction which is a direction crossing an adjoining direction. The first drive electrode includes a second electrode part E22 protruding from the first electrode part E21 toward the second drive electrode.
摘要翻译：要解决的问题：提供能够沿规定方向发射激光并改变其发射方向的半导体激光元件和激光束偏转器。解决方案：半导体激光元件包括：下包层; 上覆层; 插入在所述下包层和所述上包层之间的有源层; 介于所述有源层与所述上包覆层和所述下包层中的至少一个之间的光子晶体层; 以及用于向有源层中的多个区域提供驱动电流的多个驱动电极E2。该激光元件通过提供驱动电流而在多个区域中产生激光束。多个驱动电极E2包括彼此相邻的第一驱动电极和第二驱动电极。第一驱动电极和第二驱动电极具有沿着与邻接方向交叉的方向的长度方向延伸的第一电极部E21。第一驱动电极包括从第一电极部分E21向第二驱动电极突出的第二电极部分E22。

16. 发明专利

JP2014082260A Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：JP2014082260A
公开(公告)日：2014-05-08
申请号：JP2012228042
申请日：2012-10-15
申请人： Kyoto Univ , 国立大学法人京都大学 , Hamamatsu Photonics Kk , 浜松ホトニクス株式会社
发明人： KUROSAKA YOSHITAKA , WATANABE AKIYOSHI , HIROSE KAZUYOSHI , SUGIYAMA TAKAHIRO , NODA SUSUMU
IPC分类号： H01S5/10 , G02B1/02 , G02B13/00 , H01S5/40
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser device capable of emitting a laser beam in a prescribed direction and changing an emission direction thereof.SOLUTION: A semiconductor laser device LD1 comprises an edge-emitting semiconductor laser element 10A and a collimator lens 20. The semiconductor laser element 10A comprises a lower clad layer, an upper clad layer, an active layer, a photonic crystal layer, and a plurality of drive electrodes for supplying driving current to a plurality of regions in the active layer, and emits a plurality of laser beams LB each in a different direction from each of the positions corresponding to a plurality of regions on a light emission end surface LES. The collimator lens 20 refracts each of the plurality of laser beams LB emitted from the semiconductor laser element 10A in a plane parallel to a thickness direction of the semiconductor laser element 10A, and emits the refracted laser beam as a plurality of parallel light having a uniform width in the thickness direction of the semiconductor laser element 10A.
摘要翻译：要解决的问题：提供一种能够沿规定方向发射激光并改变其发射方向的半导体激光器件。解决方案：半导体激光器件LD1包括边缘发射半导体激光元件10A和准直透镜20。半导体激光元件10A包括下包层，上包层，有源层，光子晶体层和用于向有源层中的多个区域提供驱动电流的多个驱动电极，并且发射多个激光束LB分别在与发光端面LES上的多个区域对应的位置的不同方向上。准直透镜20在与半导体激光元件10A的厚度方向平行的平面中折射从半导体激光元件10A发射的多个激光束LB中的每一个，并将折射激光束发射为均匀的多个平行光半导体激光元件10A的厚度方向的宽度。

17. 发明专利

JP2014082258A Semiconductor laser element and semiconductor laser module 有权
标题翻译：半导体激光器元件和半导体激光器模块
公开(公告)号：JP2014082258A
公开(公告)日：2014-05-08
申请号：JP2012228035
申请日：2012-10-15
申请人： Kyoto Univ , 国立大学法人京都大学 , Hamamatsu Photonics Kk , 浜松ホトニクス株式会社
发明人： KUROSAKA YOSHITAKA , WATANABE AKIYOSHI , HIROSE KAZUYOSHI , SUGIYAMA TAKAHIRO , NODA SUSUMU
IPC分类号： H01S5/10 , H01S5/022 , H01S5/40
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser element and a semiconductor laser module, capable of emitting a laser beam in one prescribed direction and changing an emission direction thereof.SOLUTION: An edge-emitting semiconductor laser element 10A includes: an upper clad layer 5; an active layer 3B; a photonic crystal layer 4; a contact layer 6; a plurality of drive electrodes E2 arranged in regions corresponding to a plurality of regions on the contact layer 6 so as to supply driving current to a plurality of regions which are parallel to a light emission end surface of the semiconductor laser element 10A in the active layer 3B and positioned to align in a direction in which the active layer 3B extends; an insulating layer SH1 covering regions other than the region in which the plurality of driving electrodes E2 on the contact layer 6 are arranged; and a plurality of electrode pads P which are arranged on the insulating layer SH1 and electrically connected to the corresponding drive electrode E2 among the plurality of driving electrodes E2.
摘要翻译：要解决的问题：提供能够沿一个规定方向发射激光并改变其发射方向的半导体激光元件和半导体激光器模块。解决方案：边缘发射半导体激光元件10A包括：上覆盖层 5; 活性层3B; 光子晶体层4; 接触层6; 多个驱动电极E2，其布置在与接触层6上的多个区域相对应的区域中，以便向活性层中与半导体激光元件10A的发光端面平行的多个区域提供驱动电流并且定位成在有源层3B延伸的方向上对齐; 覆盖除了接触层6上的多个驱动电极E2的区域以外的区域的绝缘层SH1; 以及配置在绝缘层SH1上并与多个驱动电极E2中的对应的驱动电极E2电连接的多个电极焊盘P.

18. 发明专利

JP2014082257A Semiconductor laser module 有权
标题翻译：半导体激光模块
公开(公告)号：JP2014082257A
公开(公告)日：2014-05-08
申请号：JP2012228031
申请日：2012-10-15
申请人： Kyoto Univ , 国立大学法人京都大学 , Hamamatsu Photonics Kk , 浜松ホトニクス株式会社
发明人： KUROSAKA YOSHITAKA , WATANABE AKIYOSHI , HIROSE KAZUYOSHI , SUGIYAMA TAKAHIRO , NODA SUSUMU
IPC分类号： H01S5/022 , H01S5/042 , H01S5/12
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser module capable of emitting a laser beam in a predetermined one direction and changing the emission direction.SOLUTION: A semiconductor laser module 100 comprises a semiconductor laser element 10 and a flat plate condensation element 20. The flat plate condensation element comprises an objective surface 21 on an opposite side to a light emission end surface LES of the semiconductor laser element 10. The objective surface includes a plurality of curved surfaces 21a arranged in parallel to the light emission end surface LES and in parallel to a first direction in which an active layer extends. The curved surfaces are contacted with a plane f vertical to an incoming laser beam. A coordinate axis parallel to the first direction is defined as an X-axis, and each curvature radius of the curved surfaces is based on the following numerical expression (1). Here, n(X) represents a refractive index of the flat plate condensation element at a position X, θ(X) represents an angle to a normal line of the light emission end surface LES of the laser beam emitted at the position X, and frepresents a focal length in an X-axial direction of the flat plate condensation element in the case of θ(X)=0.
摘要翻译：要解决的问题：提供能够沿预定的一个方向发射激光束并改变发射方向的半导体激光器模块。解决方案：半导体激光器模块100包括半导体激光元件10和平板冷凝元件20。平板冷凝元件包括与半导体激光元件10的发光端面LES相反侧的物镜表面21.物镜表面包括多个平行于发光端表面LES并平行布置的曲面21a 到有源层延伸的第一方向。曲面与垂直于入射激光束的平面f接触。平行于第一方向的坐标轴被定义为X轴，并且曲面的每个曲率半径基于以下数值表达式（1）。这里，n（X）表示平板冷凝元件在位置X处的折射率，（X）表示与在位置X发射的激光的发光端面LES的法线的角度，并且在（θ）= 0的情况下，表示平板冷凝元件的X轴方向的焦距。

19. 发明专利

JP2012033749A Semiconductor surface light emitting element, and method of manufacturing the same 有权
标题翻译：半导体表面发光元件及其制造方法
公开(公告)号：JP2012033749A
公开(公告)日：2012-02-16
申请号：JP2010172585
申请日：2010-07-30
申请人： Hamamatsu Photonics Kk , Kyoto Univ , 国立大学法人京都大学 , 浜松ホトニクス株式会社
发明人： HIROSE KAZUYOSHI , FURUTA SHINICHI , WATANABE AKIYOSHI , SUGIYAMA TAKAHIRO , SHIBATA TADATOKU , KUROSAKA YOSHITAKA , NODA SUSUMU
IPC分类号： H01S5/18
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor surface light emitting element and a method of manufacturing the same capable of improving characteristics.SOLUTION: A semiconductor surface light emitting element has: a photonic crystal layer 6 formed by forming a plurality of holes H in a basic layer 6A made of a first compound semiconductor having a zinc blende structure periodically, and growing a buried layer 6B having a zinc blende structure and made of a second compound semiconductor in the hole H; and an active layer 4 that supplies light to the photonic crystal layer 6. A lateral face of the hole has a {110} plane. The buried layer 6B has a projecting part HB1 protruded from at least one {110} plane that is an interface with the lateral face of the hole.
摘要翻译：要解决的问题：提供一种能够提高特性的半导体表面发光元件及其制造方法。解决方案：半导体表面发光元件具有：通过在由具有闪锌矿结构的第一化合物半导体构成的碱性层6A中周期性地形成多个孔H而形成的光子晶体层6，并且生长掩埋层6B 具有闪锌矿结构并由孔H中的第二化合物半导体制成; 以及向光子晶体层6提供光的有源层4.孔的侧面具有ä110}面。掩埋层6B具有从与孔的侧面接口的至少一个ä110}面突出的突出部分HB1。版权所有（C）2012，JPO＆INPIT

20. 发明专利

JP2019003041A 発光装置审中-公开
公开(公告)号：JP2019003041A
公开(公告)日：2019-01-10
申请号：JP2017117736
申请日：2017-06-15
申请人： HAMAMATSU PHOTONICS KK
发明人： TAKIGUCHI MASARU , HIROSE KAZUYOSHI , KUROSAKA YOSHITAKA , SUGIYAMA TAKAHIRO , NOMOTO YOSHIAKI , UENOYAMA SO
IPC分类号： G02F1/29 , G02F1/015 , H01S5/18
摘要：【課題】空間光変調素子から出射される変調後の光に対する半導体発光素子による減衰や回折作用を低減することができる発光装置を提供する。【解決手段】発光装置1Aは、光出射面10aに垂直な方向に対して傾斜した方向に光Lを出射する半導体発光素子10Aと、光出射面10aと平行に対向する光入出射面20aを有し、光入出射面20aから入射した光Lを反射しつつ変調する空間光変調素子20とを備える。半導体発光素子10Aは、活性層13、位相変調層16A、及び電極18,19を有する。位相変調層16Aの複数の異屈折率領域16bの重心は、仮想的な正方格子の格子点から離れて配置され、格子点周りに各異屈折率領域16b毎に設定された回転角度を有する。半導体発光素子10Aは領域8a,8bを含む。電極18,19は領域8aに設けられ、光Lは領域8aの光出射面10aから出射する。変調後の光Lは領域8bを透過する。【選択図】図1

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