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1. 发明专利

JP2014197659A 半導体レーザ素子有权
标题翻译：半导体激光元件
公开(公告)号：JP2014197659A
公开(公告)日：2014-10-16
申请号：JP2013202086
申请日：2013-09-27
申请人：国立大学法人京都大学 , Kyoto Univ , 浜松ホトニクス株式会社 , Hamamatsu Photonics Kk
发明人： HIROSE KAZUYOSHI , WATANABE AKIYOSHI , KUROSAKA YOSHITAKA , SUGIYAMA TAKAHIRO , NODA SUSUMU
IPC分类号： H01S5/18 , H01S5/323
CPC分类号： H01S5/18 , H01S3/08009 , H01S5/0425 , H01S5/105 , H01S5/12 , H01S5/1231 , H01S5/183 , H01S5/18319 , H01S5/187 , H01S2301/14
摘要：【課題】半導体レーザ素子で高いビーム品質(指標M2
摘要翻译：要解决的问题：在半导体激光元件中实现高光束质量（指数M <1）。解决方案：在半导体激光元件中，衍射光栅层6的衍射光栅6ba沿主表面2a延伸，并且设置在衍射光栅层6的p侧表面6a上，并且衍射光栅层6的折射率在衍射光栅6ba沿着主表面2a延伸的方向周期性地变化。衍射光栅6ba包括多个孔6b，并且多个孔6b设置在p侧表面6a上并且沿着正方形栅格R3以平移对称的方式布置，并且多个孔6b具有相同的尺寸和形状。每个孔6b对应于衍射光栅6ba的每个栅格点，并且具有三棱柱形状，并且每个孔6b的底面6c的形状几乎是直角三角形。

2. 发明专利

JP2014079923A Laser printer 有权
标题翻译：激光打印机
公开(公告)号：JP2014079923A
公开(公告)日：2014-05-08
申请号：JP2012228089
申请日：2012-10-15
申请人： Kyoto Univ , 国立大学法人京都大学 , Hamamatsu Photonics Kk , 浜松ホトニクス株式会社
发明人： KUROSAKA YOSHITAKA , WATANABE AKIYOSHI , HIROSE KAZUYOSHI , SUGIYAMA TAKAHIRO , OONOKI NORIYUKI , NODA SUSUMU
IPC分类号： B41J2/44 , B41J2/45 , B41J2/455 , G02B1/02 , H01S5/10
摘要： PROBLEM TO BE SOLVED: To provide a laser printer which can accelerate a printing speed.SOLUTION: A laser printer comprises an edge-emitting semiconductor laser element 10 which includes a lower cladding layer, an upper cladding layer, an active layer, a photonic crystal layer, and a plurality of driving electrodes, and generates laser beams from a plurality of areas by supply of driving current. The plurality of areas are located so as to be parallel to a light emitting end surface of the semiconductor laser element 10 and so as to be arranged in a first direction where the active layer extends, and the emitting directions of laser beams, generated in the plurality of areas, from the light emitting end surface are different from each other. The semiconductor laser element 10 and a photosensitive drum 102 are arranged so that the laser beams emitted from the plurality of areas are applied to different positions along a direction parallel to the first direction on the photosensitive drum 102.
摘要翻译：要解决的问题：提供一种能够加快打印速度的激光打印机。解决方案：激光打印机包括边缘发射半导体激光元件10，其包括下包层，上包层，有源层，光子晶体层和多个驱动电极，并且通过提供驱动电流从多个区域产生激光束。多个区域被定位成与半导体激光元件10的发光端面平行，并且被布置在有源层延伸的第一方向上，并且激光束的发射方向在从发光端面的多个区域彼此不同。半导体激光元件10和感光鼓102被布置成使得从多个区域发射的激光束沿着与感光鼓102上的第一方向平行的方向被施加到不同的位置。

3. 发明专利

JP2012190847A Edge-emitting semiconductor laser element 有权
标题翻译：边缘发光半导体激光元件
公开(公告)号：JP2012190847A
公开(公告)日：2012-10-04
申请号：JP2011050688
申请日：2011-03-08
申请人： Kyoto Univ , Hamamatsu Photonics Kk , 国立大学法人京都大学 , 浜松ホトニクス株式会社
发明人： WATANABE AKIYOSHI , HIROSE KAZUYOSHI , SHIBATA TADATOKU , SUGIYAMA TAKAHIRO , KUROSAKA YOSHITAKA , NODA SUSUMU
IPC分类号： H01S5/12 , H01S5/22
CPC分类号： H01S5/12 , H01S5/105 , H01S5/22 , H01S2301/18
摘要： PROBLEM TO BE SOLVED: To provide an edge-emitting semiconductor laser element which can perform uniform spatial transverse mode operation stably.SOLUTION: The edge-emitting semiconductor laser element includes a two-dimensional photonic crystal 4 formed in a semiconductor layer. When one direction of the contact region of an electrode 8 means the longitudinal direction (X axis) and the direction perpendicular to both the longitudinal direction and the thickness direction of a substrate means the width direction (Y axis), the two-dimensional photonic crystal 4 includes a refractive index period structure located in a region including the contact region of an electrode and wider than the contact region in the width direction when viewed from the direction (Z axis) perpendicular to the substrate, and having a refractive index which changes periodically at intervals in one direction (X axis) while satisfying the Bragg diffraction conditions.
摘要翻译：要解决的问题：提供可以稳定地执行均匀的空间横向模式操作的边缘发射半导体激光元件。解决方案：边缘发射半导体激光元件包括形成在半导体层中的二维光子晶体4。当电极8的接触区域的一个方向意味着纵向方向（X轴）和垂直于基板的纵向方向和厚度方向的方向意味着宽度方向（Y轴）时，二维光子晶体图4所示的折射率周期结构包括折射率周期结构，该折射率周期结构位于从垂直于基板的方向（Z轴）观察时，包括电极的接触区域和宽度方向的接触区域的区域，并且具有周期性变化的折射率同时满足布拉格衍射条件的一个方向（X轴）的间隔。版权所有（C）2013，JPO＆INPIT

4. 发明专利

JP2014082262A Semiconductor laser element and semiconductor laser module 有权
标题翻译：半导体激光器元件和半导体激光器模块
公开(公告)号：JP2014082262A
公开(公告)日：2014-05-08
申请号：JP2012228049
申请日：2012-10-15
申请人： Kyoto Univ , 国立大学法人京都大学 , Hamamatsu Photonics Kk , 浜松ホトニクス株式会社
发明人： KUROSAKA YOSHITAKA , WATANABE AKIYOSHI , HIROSE KAZUYOSHI , SUGIYAMA TAKAHIRO , NODA SUSUMU
IPC分类号： H01S5/026
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser element capable of emitting a laser beam in the same direction for each of a plurality of drive electrodes and changing an emission direction thereof.SOLUTION: A semiconductor laser element 10A comprises an oscillation unit which generates a plurality of laser beams and outputs the plurality of generated laser beams in the same direction and a deflection unit which deflects each of the plurality of laser beams output by the oscillation unit in the same direction in a different direction. The oscillation unit comprises a lower clad layer 2, an upper clad layer 5, an active layer 3B, a first photonic crystal layer 41, and a plurality of drive electrodes E2. The deflection unit includes a second photonic crystal layer 43. The first photonic crystal layer 41 has a periodic structure in which an arrangement period of a different-refractive-index part 4B is the same across regions corresponding to a plurality of regions R. The second photonic crystal layer 43 has a periodic structure in which the arrangement period of the different-refractive-index part 4B differs for each of the regions corresponding to the plurality of regions S.
摘要翻译：要解决的问题：提供能够对于多个驱动电极中的每一个发射相同方向的激光束并改变其发射方向的半导体激光元件。解决方案：半导体激光元件10A包括振荡单元，其产生多个激光束并且沿相同方向输出多个产生的激光束;以及偏转单元，其使由振荡单元输出的多个激光束中的每一个在不同的方向上沿相同方向偏转。振荡单元包括下包层2，上覆层5，有源层3B，第一光子晶体层41和多个驱动电极E2。偏转单元包括第二光子晶体层43.第一光子晶体层41具有周期性结构，其中不同折射率部分4B的布置周期在对应于多个区域R的区域中是相同的。第二光子晶体层43具有周期性结构，其中对应于多个区域S的每个区域，不同折射率部分4B的布置周期不同。

5. 发明专利

JP2014082261A Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：JP2014082261A
公开(公告)日：2014-05-08
申请号：JP2012228045
申请日：2012-10-15
申请人： Kyoto Univ , 国立大学法人京都大学 , Hamamatsu Photonics Kk , 浜松ホトニクス株式会社
发明人： KUROSAKA YOSHITAKA , WATANABE AKIYOSHI , HIROSE KAZUYOSHI , SUGIYAMA TAKAHIRO , NODA SUSUMU
IPC分类号： H01S5/10 , G02B1/02 , G02B13/00 , H01S5/40
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser device capable of emitting a laser beam in a prescribed direction and changing an emission direction thereof.SOLUTION: A semiconductor laser device LD1 comprises an edge-emitting semiconductor laser element 10A and a collimator lens 20. The semiconductor laser element 10A comprises a lower clad layer, an upper clad layer, an active layer, a photonic crystal layer, and a plurality of drive electrodes for supplying driving current to a plurality of regions in the active layer, and emits a plurality of laser beams LB each in a different direction from each of the positions corresponding to a plurality of regions on a light emission end surface LES . The collimator lens 20 has curvatures of a front surface 20a and a rear surface 20b so that an optical path length from each emission position to a front side principal plane on a light emission end surface LES becomes equal, and refracts each of the plurality of laser beams LB emitted from the semiconductor laser element 10A in a plane parallel to a thickness direction of the semiconductor laser element 10A.
摘要翻译：要解决的问题：提供一种能够沿规定方向发射激光并改变其发射方向的半导体激光器件。解决方案：半导体激光器件LD1包括边缘发射半导体激光元件10A和准直透镜20。半导体激光元件10A包括下包层，上包层，有源层，光子晶体层和用于向有源层中的多个区域提供驱动电流的多个驱动电极，并且发射多个激光束LB分别在与发光端面LES上的多个区域对应的位置的不同方向上。准直透镜20具有前表面20a和后表面20b的曲率，使得从发光端面LES上的每个发光位置到前侧主面的光路长度相等，并且折射多个激光在与半导体激光元件10A的厚度方向平行的平面上从半导体激光元件10A发射的光束LB。

6. 发明专利

JP2013120801A Semiconductor laser element and laser beam deflector 有权
标题翻译：半导体激光元件和激光光束偏转器
公开(公告)号：JP2013120801A
公开(公告)日：2013-06-17
申请号：JP2011267186
申请日：2011-12-06
申请人： Kyoto Univ , 国立大学法人京都大学 , Hamamatsu Photonics Kk , 浜松ホトニクス株式会社
发明人： NODA SUSUMU , KUROSAKA YOSHITAKA , WATANABE AKIYOSHI , HIROSE KAZUYOSHI , SUGIYAMA TAKAHIRO
IPC分类号： H01S5/50
CPC分类号： H01S5/105 , H01S5/0425 , H01S5/06243 , H01S5/1085 , H01S5/1218 , H01S5/323 , H01S5/34313 , H01S5/4056
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser element and a laser beam deflector, which emit laser beams only in a single direction and which can change the emission direction.SOLUTION: In a semiconductor laser element, a longer direction of a first drive electrode E2 is inclined with respect to a normal line (Y axis) of a light emission surface LES of the semiconductor laser element. And a region Δ1 of a photonic crystal layer 4 corresponding to a first region R has first and second periodic structures respectively having arrangement periods different from each other, of different refraction factor parts 4B each having refraction factor different from a refraction factor of a surrounding area. More than one laser beam is generated inside the semiconductor laser element, which forms a predetermined angle (δθ) with respect to a longer direction (B direction) of the first drive electrode E2 corresponding to a difference between inverse numbers of the arrangement periods (a1, a2) in the respective first and second periodic structures, when viewed from a thickness direction of the semiconductor laser element. One laser beam among the laser beams is set to be totally reflected at the light emission surface, and the other laser beam is set to have a refracting angle θ3 of less then 90 degrees.
摘要翻译：要解决的问题：提供半导体激光元件和激光束偏转器，其仅在单个方向上发射激光束并且可以改变发射方向。解决方案：在半导体激光元件中，第一驱动电极E2的较长方向相对于半导体激光元件的发光面LES的法线（Y轴）倾斜。并且与第一区域R对应的光子晶体层4的区域Δ1分别具有彼此不同的布置周期的不同折射系数部分4B的折射系数不同于周围区域的折射系数的第一和第二周期结构。在半导体激光元件内产生多于一个的激光束，该激光束相对于第一驱动电极E2的长度方向（B方向）形成与排列周期（a1）的倒数的差对应的预定角度（δθ），a2）在从半导体激光元件的厚度方向观察时在各自的第一和第二周期结构中。将激光束中的一个激光束设定为在发光面全反射，另一方的激光束的折射角度θ3小于90度。版权所有（C）2013，JPO＆INPIT

7. 发明专利

JP2014082265A Semiconductor laser element 有权
标题翻译：半导体激光元件
公开(公告)号：JP2014082265A
公开(公告)日：2014-05-08
申请号：JP2012228092
申请日：2012-10-15
申请人： Kyoto Univ , 国立大学法人京都大学 , Hamamatsu Photonics Kk , 浜松ホトニクス株式会社
发明人： KUROSAKA YOSHITAKA , WATANABE AKIYOSHI , HIROSE KAZUYOSHI , SUGIYAMA TAKAHIRO , NODA SUSUMU
IPC分类号： H01S5/028 , H01S5/12 , H01S5/40
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser element and a laser beam deflector, capable of emitting a laser beam in a prescribed direction and changing an emission direction thereof.SOLUTION: A semiconductor laser element comprises: a layer structure 100 including a lower clad layer, an upper clad layer, an active layer interposed between the lower clad layer and the upper clad layer, a photonic crystal layer, and a plurality of drive electrodes for supplying driving current to a plurality of regions in the active layer; and a coating film 101 formed on a light emission end surface LES of the layer structure 100. A film thickness d in positions corresponding to a plurality of regions of the coating film 101 is set according to a refractive angle which is an angle formed between a laser beam refraction direction in the positions corresponding to the plurality of regions and a normal line of a light emission end surface LES so that laser beam amplitude reflectance on a coating film surface CFS becomes a desired value.
摘要翻译：要解决的问题：提供一种半导体激光元件和激光束偏转器，其能够沿规定方向发射激光并改变其发射方向。解决方案：半导体激光元件包括：层结构100，包括下包层介于下包层和上包层之间的有源层，用于向有源层中的多个区域提供驱动电流的多个驱动电极，以及形成在层结构体100的发光端面LES上的涂膜101.在涂膜101的多个区域的位置对应的位置的膜厚d根据折射角设定，该折射角为在与多个区域对应的位置的激光束折射方向和发光端面LES的法线，使得涂膜表面CFS上的激光束振幅反射率成为期望值。

8. 发明专利

JP2014175488A Laser device 有权
标题翻译：激光装置
公开(公告)号：JP2014175488A
公开(公告)日：2014-09-22
申请号：JP2013047125
申请日：2013-03-08
申请人： Kyoto Univ , 国立大学法人京都大学 , Hamamatsu Photonics Kk , 浜松ホトニクス株式会社
发明人： WATANABE AKIYOSHI , HIROSE KAZUYOSHI , KUROSAKA YOSHITAKA , SUGIYAMA TAKAHIRO , NODA SUSUMU
IPC分类号： H01S5/18 , H01S5/026
CPC分类号： H01S5/0092 , G02F1/3544 , G02F1/3551 , G02F1/3558 , G02F1/37 , G02F2001/3548 , H01S5/02248 , H01S5/02446 , H01S5/105 , H01S5/18 , H01S5/187
摘要： PROBLEM TO BE SOLVED: To provide a laser device producing a Gaussian distribution point-shaped beam having a remarkably strong light intensity, by wavelength conversion using a nonlinear optical crystal.SOLUTION: A laser device includes a nonlinear optical crystal NL having a period polarization inversion structure on which laser light emitted from a photonic crystal surface emission laser element LD impinges. The different refractive index region 6B of a photonic crystal layer is arranged at the grating point position of a square grating. When the planar shape of each different refractive index region 6B is substantially rectangular equilateral triangle, two sides constituting the right angle extend along the longitudinal and lateral grid lines of a square grating, and the orientation parallel with or perpendicular to the hypotenuse of the triangle matches the orientation of polarization in the period polarization inversion structure of the nonlinear optical crystal NL.
摘要翻译：要解决的问题：提供一种通过使用非线性光学晶体的波长转换来制造具有非常强的光强度的高斯分布点状光束的激光装置。解决方案：激光装置包括具有周期偏振反转的非线性光学晶体NL 从光子晶体表面发射激光元件LD发射的激光照射的结构。光子晶体层的不同折射率区域6B布置在正方形光栅的光栅点位置。当每个不同折射率区域6B的平面形状基本上是矩形的等边三角形时，构成直角的两边沿着正方形光栅的纵向和横向网格线延伸，并且与三角形的斜边平行或垂直的取向匹配非线性光学晶体NL的周期极化反转结构中的极化取向。

9. 发明专利

JP2014082263A Semiconductor laser element 有权
标题翻译：半导体激光元件
公开(公告)号：JP2014082263A
公开(公告)日：2014-05-08
申请号：JP2012228085
申请日：2012-10-15
申请人： Kyoto Univ , 国立大学法人京都大学 , Hamamatsu Photonics Kk , 浜松ホトニクス株式会社
发明人： KUROSAKA YOSHITAKA , WATANABE AKIYOSHI , HIROSE KAZUYOSHI , SUGIYAMA TAKAHIRO , NODA SUSUMU
IPC分类号： H01S5/12 , H01S5/22
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser element and a laser beam deflector, capable of emitting a laser beam in a prescribed direction and changing an emission direction thereof.SOLUTION: A semiconductor laser element comprises: a lower clad layer; an upper clad layer; an active layer interposed between the lower clad layer and the upper clad layer; a photonic crystal layer interposed between the active layer and at least one of the upper clad layer and the lower clad layer; and a plurality of drive electrodes E2 for supplying driving current to a plurality of regions in the active layer. This laser element generates a laser beam in the plurality of regions by supplying driving current. The plurality of drive electrodes E2 include a first drive electrode and a second drive electrode which are adjacent to each other. The first drive electrode and the second drive electrode include a first electrode part E21 extending in a longitudinal direction which is a direction crossing an adjoining direction. The first drive electrode includes a second electrode part E22 protruding from the first electrode part E21 toward the second drive electrode.
摘要翻译：要解决的问题：提供能够沿规定方向发射激光并改变其发射方向的半导体激光元件和激光束偏转器。解决方案：半导体激光元件包括：下包层; 上覆层; 插入在所述下包层和所述上包层之间的有源层; 介于所述有源层与所述上包覆层和所述下包层中的至少一个之间的光子晶体层; 以及用于向有源层中的多个区域提供驱动电流的多个驱动电极E2。该激光元件通过提供驱动电流而在多个区域中产生激光束。多个驱动电极E2包括彼此相邻的第一驱动电极和第二驱动电极。第一驱动电极和第二驱动电极具有沿着与邻接方向交叉的方向的长度方向延伸的第一电极部E21。第一驱动电极包括从第一电极部分E21向第二驱动电极突出的第二电极部分E22。

10. 发明专利

JP2014082260A Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：JP2014082260A
公开(公告)日：2014-05-08
申请号：JP2012228042
申请日：2012-10-15
申请人： Kyoto Univ , 国立大学法人京都大学 , Hamamatsu Photonics Kk , 浜松ホトニクス株式会社
发明人： KUROSAKA YOSHITAKA , WATANABE AKIYOSHI , HIROSE KAZUYOSHI , SUGIYAMA TAKAHIRO , NODA SUSUMU
IPC分类号： H01S5/10 , G02B1/02 , G02B13/00 , H01S5/40
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser device capable of emitting a laser beam in a prescribed direction and changing an emission direction thereof.SOLUTION: A semiconductor laser device LD1 comprises an edge-emitting semiconductor laser element 10A and a collimator lens 20. The semiconductor laser element 10A comprises a lower clad layer, an upper clad layer, an active layer, a photonic crystal layer, and a plurality of drive electrodes for supplying driving current to a plurality of regions in the active layer, and emits a plurality of laser beams LB each in a different direction from each of the positions corresponding to a plurality of regions on a light emission end surface LES. The collimator lens 20 refracts each of the plurality of laser beams LB emitted from the semiconductor laser element 10A in a plane parallel to a thickness direction of the semiconductor laser element 10A, and emits the refracted laser beam as a plurality of parallel light having a uniform width in the thickness direction of the semiconductor laser element 10A.
摘要翻译：要解决的问题：提供一种能够沿规定方向发射激光并改变其发射方向的半导体激光器件。解决方案：半导体激光器件LD1包括边缘发射半导体激光元件10A和准直透镜20。半导体激光元件10A包括下包层，上包层，有源层，光子晶体层和用于向有源层中的多个区域提供驱动电流的多个驱动电极，并且发射多个激光束LB分别在与发光端面LES上的多个区域对应的位置的不同方向上。准直透镜20在与半导体激光元件10A的厚度方向平行的平面中折射从半导体激光元件10A发射的多个激光束LB中的每一个，并将折射激光束发射为均匀的多个平行光半导体激光元件10A的厚度方向的宽度。

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