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11. 发明专利

JPH10314598A ANTIFOULING METHOD USING PHOTOCATALYST, ANTIFOULING FILM AND ANTIFOULING PRODUCT 失效
公开(公告)号：JPH10314598A
公开(公告)日：1998-12-02
申请号：JP12989197
申请日：1997-05-20
申请人： HITACHI LTD , NITTO DENKO CORP
发明人： ISHIKAWA TAKAO , KAMOTO DAIGORO , OISHI TOMOJI , TAKAHASHI KEN , DOMOTO TADANORI , SHIBATA KAZUNARI
IPC分类号： B01D53/86 , B01J35/02 , B32B9/00 , C09K3/00 , C09K3/16
摘要： PROBLEM TO BE SOLVED: To catalyze the decomposition of organic matters and prevent the adhesion of foreign matters by using a conductive body and making the surface resistance of a photocatalyst film less than specified value. SOLUTION: A glass plate 5 with an anti-static photocatalyst film formed of a base 1 and a conductive photocatalyst film 4 laminated together is manufactured (b). A continuous phase 3 composed of TiO2 as a photocatalyst and conductive fine particles 2 dispersed in the continuous phase 3 are provided (a). In the manufacturing method for the glass plate 5, a coating liquid prepared by ITO-fine particle dispersed into titania sol is dried and heated after forming a film of one of the surface and the back of the glass base 1. When the surface resistance value and an anti-static photocatalyst film 4 of non-conductive film thus formed and the foul of the film after the film is left in a smoking room for one month are checked and the surface resistance value is 10 Ω/square or less, the anti-static preventing function is effective for preventing the adhesion of dust.

12. 发明专利

JPH10214584A ELECTRIC CHARACTERISTIC ANALYZER 失效
公开(公告)号：JPH10214584A
公开(公告)日：1998-08-11
申请号：JP1818497
申请日：1997-01-31
申请人： HITACHI LTD
发明人： TANAKA SHIGERU , TAKAHASHI KEN , YAMADA SEIICHI , SHOJI MORITAKA
IPC分类号： G01N23/22 , H01J37/20 , H01J37/244 , H01J37/28
摘要： PROBLEM TO BE SOLVED: To specify an arbitrary position of a sample and achieve measurement of electric characteristics of the sample at the arbitrary position without any sample machining by using a sample stage provided with at least two metallic micro probes, which can be moved at a predetermined pitch in X-, Y- and Z-directions, and a scanning electron microscope capable of confirming the surface of the sample and the tip of the micro probe. SOLUTION: Micro probes 2 and a sample holder fixed to various lead wires are placed on a sample stage 4 of a scanning electron microscope(SEM). A ceramics sample having an appropriate size is stuck to the sample holder, and then, the micro probes 2 are visually moved near the surface of the sample. Thereafter, the SEM is vacuum-exhausted, thus generating an electron beam. In work for confirming the sample and the tip of the micro probe 2, PZT ceramic 3 (driving element of the micro probe) is driven to finely adjust the micro probe 2 in an arbitrary position after determination of an observed region. Consequently, it is possible to grasp electric properties of the arbitrary fine region in the sample.

13. 发明专利

JPH1036168A PRODUCTION OF CERAMIC LINEAR RESISTOR 失效
公开(公告)号：JPH1036168A
公开(公告)日：1998-02-10
申请号：JP19457496
申请日：1996-07-24
申请人： HITACHI LTD , JAPAN RES DEV CORP
发明人： MOTOWAKI NARIHISA , TAKAHASHI KEN , TANAKA SHIGERU , MAEDA KUNIHIRO
IPC分类号： C04B35/453 , H01C7/10
摘要： PROBLEM TO BE SOLVED: To obtain a ceramic linear resistor aiming at a highly withstanding property by blending specific four components and burning the mixture, and a breaker stably functioning up to a high temperature by using the highly withstanding ceramic linear resistor. SOLUTION: This ceramic linear resistor is obtained by blending 68-90mol% Zn based on ZnO, 5-20mol% Al based on Al2 O3 , 3-10mol% Mg based on MgO and >=1mol% at least one of ZnAl2 O4 and MgAl2 O4 , and sintering the mixture. A resistor element 1 obtained by inserting an insulating rod 2 into an insulating tube 3, is housed in a resistor unit 4 of a breaker shown in the figure, and a bushing 10 for protecting an electric circuit is installed therein. By air from an air tank 9, a piston 7 for opening and closing operations is actuated, main contact points 6a, 6b for turning on electricity are opened for applying the electricity to the resistor unit 4 connected in parallel, and rear resisting contact points 5a, 5b are opened to complete a breaking function. A turning on function is to close the resistor contacting points 5a, 5b by the piston 7 for the opening and closing operations, turn on the electricity to the resistor unit 4 and close the main contacting points 6a, 6b.

14. 发明专利

JPH1027886A HIGH DIELECTRIC DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPH1027886A
公开(公告)日：1998-01-27
申请号：JP17894996
申请日：1996-07-09
申请人： HITACHI LTD
发明人： NAMATAME TOSHIHIDE , SUZUKI TAKAAKI , HIGASHIYAMA KAZUHISA , OISHI TOMOJI , TAKAHASHI KEN
IPC分类号： C30B29/30 , C30B29/32 , H01B3/00 , H01J11/20 , H01J11/38 , H01L21/822 , H01L21/8242 , H01L27/04 , H01L27/108 , H01J11/02
摘要： PROBLEM TO BE SOLVED: To provide a high dielectric device which is high in dielectric constant, small in leakage current density, and high in degree of integration by a method wherein the dielectric device is formed of high dielectric thin film of perovskite structure. SOLUTION: In a high dielectric thin film of perovskite, elements of different ion diameters are combined at sites A and B which form crystal lattices and a site C which induces polarization, whereby the crystal lattices are optionally and much distorted. Resultantly, a high dielectric thin film of perovskite high in dielectric constant and small in leakage current density is sandwiched in between electrodes for the formation of a high dielectric device. By this setup, a high dielectric device or a memory cell high in degree of integration and capable of checking reading and writing can be realized.

15. 发明专利

JP2592333B2 失效
公开(公告)号：JP2592333B2
公开(公告)日：1997-03-19
申请号：JP22040689
申请日：1989-08-29
申请人： HITACHI LTD
发明人： TAKAHASHI KEN , TSURUOKA SHIGEO , TOKUDA HIROATSU
IPC分类号： G01F1/68 , G01F1/69 , G01F1/692

16. 发明专利

JPH08327487A SEMICONDUCTOR PRESSURE DETECTOR 失效
公开(公告)号：JPH08327487A
公开(公告)日：1996-12-13
申请号：JP13123695
申请日：1995-05-30
申请人： HITACHI LTD
发明人： SUZUKI HIDEO , TAKAHASHI KEN , TAKAHASHI YUKIO , YAMAMOTO YOSHIMI , AOKI KENICHI , HIDA TOMOYUKI
IPC分类号： G01L13/06 , G01L9/00 , G01L9/04 , G01L19/00
摘要： PURPOSE: To provide a semiconductor pressure detector in which the influence of a residual strain on a silicon diaphragm is eliminated when a glass base is bonded to a metallic base with bonding glass, and the occurrence of insufficient bonding is eliminated, and further provide an intelligent differential pressure/pressure transmitter using the pressure detector. CONSTITUTION: A semiconductor pressure detector is constituted of a silicon diaphragm 1 having a strain-sensitive element, a glass or ceramic base 2 bonded to the diaphragm 1, and a metallic base 4 bonded to the glass or ceramic base 2 with bonding glass 3. The coefficient of thermal expansion of the metallic base 4 at the distortion spot of the bonding glass 3 is adjusted to equal to or lower than that of the glass or ceramic base 2.

17. 发明专利

JPH08293495A INORGANIC MATERIAL MANUFACTURING SOLUTION AND METHOD OF MANUFACTURING INORGANIC FILM 失效
公开(公告)号：JPH08293495A
公开(公告)日：1996-11-05
申请号：JP9650895
申请日：1995-04-21
申请人： HITACHI LTD
发明人： MAEKAWA SACHIKO , OISHI TOMOJI , ISHIKAWA TAKAO , KAMOTO DAIGORO , TAKAHASHI KEN
IPC分类号： C01B13/32 , B01J19/00 , C01B33/12 , C30B30/00 , H01L21/316 , H01L21/768
摘要： PURPOSE: To simply manufacture an inorganic material used in a semiconductor device, etc., by a method wherein, in coupling oxygen atoms and organic groups of metal alkoxide in a solution, electromagnetic waves irradiates to promote hydrolysis of the metal alkoxide to form a prepolymer of a metal oxide in a solution. CONSTITUTION: An ethanol solution 102 of water is added to an ethanol solution 101 of silicontetraethoxide, and electromagnetic irradiation 103 having energy necessary to destroy coupling oxygen atoms and organic groups of silicontetraethoxide is performed for this solution. The solution that hydrolysis and degeneracy are performed by the electromagnetic irradiation 103 is applied to a semiconductor substrate 105, and further electromagnetic irradiation 107 or heating is performed to form a prepolymer 108 of a metal oxide. Thus, it is possible to manufacture simply a minute inorganic material which is also excellent in an electric insulation property.

18. 发明专利

JPH08241626A TRANSPARENT CONDUCTIVE FILM, AND MANUFACTURE AND APPLICATION THEREOF 失效
公开(公告)号：JPH08241626A
公开(公告)日：1996-09-17
申请号：JP4381895
申请日：1995-03-03
申请人： HITACHI LTD
发明人： ISHIKAWA TAKAO , MAEKAWA SACHIKO , KAMOTO DAIGORO , OISHI TOMOJI , TAKAHASHI KEN , NISHIZAWA SHOKO
IPC分类号： C01G19/00 , B01J19/12 , C01G19/02 , C01G30/00 , C01G55/00 , C09K3/16 , G09F9/30 , H01B5/14 , H01B13/00 , H01J9/20 , H01J29/88
摘要： PURPOSE: To reduce resistibility by one digit compared with a conventional article in transparent conductive film material and facilitating the forming of a transparent electrode having a large area, by including oxides of Sn and Sb and at least one kind of oxides of group VIII metallic oxide excluding Fe, Co, and Ni, and organic solvent in the transparent conductive material. CONSTITUTION: A transparent conductive film for a screen display device includes 2-15wt.% of Sb when converted to Sb oxide, and at least one kind of group VIII metallic oxides, excluding Fe, Co, and Ni, of 0.1-5wt.% when converted to their metallic oxides, and of 80wt.% or more when converted to Sn oxide. For example, Sn chloride is melted in propanol, and isopropoxy Sb is added to a melted matter to be heated and stirred to be adopted as a raw material solvent. Also ruthenium acetyl acetate is added to be heated and stirred to adjust the raw material solvent. These raw material solvents are spin-coated on a glass base plate, and then are backed at 300-500 deg.C in air to manufacture an Sn oxide thin coat wherein Sb oxide of 10wt.% is added, and a Sn oxide coat wherein a Sb2 O5 of 10wt.% and a RuO2 of 1wt.% is added. Resistivity can be made 0.1Ωcm or less by adding Ru, and lower the resistivity by about one order of magnitude by adding Ru.

19. 发明专利

JPH08109480A METALLIC MEMBER 失效
公开(公告)号：JPH08109480A
公开(公告)日：1996-04-30
申请号：JP23230995
申请日：1995-09-11
申请人： HITACHI LTD
发明人： OISHI TOMOJI , TAKAHASHI KEN , NAKAZAWA TETSUO , TANAKA SHIGERU , MITSUYOSHI TADAHIKO
IPC分类号： G02B5/26 , B01J19/00 , B01J19/12 , C01B33/12 , C01G1/02 , C01G15/00 , C01G19/02 , C01G23/04 , C23C24/00 , C23C26/00 , C23C30/00 , G02B1/11 , G02B1/115 , G02B5/28 , G02B5/30 , H01G4/33 , H01L21/314 , H01L21/316
摘要： PURPOSE: To produce a metallic member from which a metallic polymer thin film low in residual org. matter and uniform in stoichiometric ratio is obtained at a low temp. without heat treatment. CONSTITUTION: The metallic member is constituted by forming an inorg. polymer thin film having 0.01-4atm.% carbon content, containing C-H bond and being an amorphous inorg. polymer substantially consisting of metal oxide on a substrate having

20. 发明专利

JPH08102404A CERAMIC RESISTOR 失效
公开(公告)号：JPH08102404A
公开(公告)日：1996-04-16
申请号：JP23639094
申请日：1994-09-30
申请人： HITACHI LTD
发明人： SHOJI MORITAKA , YAMADA SEIICHI , TANAKA SHIGERU , TAKAHASHI KEN , YAMAZAKI TAKEO
IPC分类号： H01C7/00
摘要： PURPOSE: To obtain a ceramic resistor having an excellent breakdown strength by a method wherein respective specific amount of aluminum oxide, magnesium oxide, silicon oxide and nickel oxide are added to zinc oxide as a main compo nent. CONSTITUTION: This ceramic resistor is composed of zinc oxide as a main component as well as 3.4-40mol% of aluminum oxide in terms of Al2 O3 , 2.0-40mol% of magnesium oxide in terms of MgO, 0.1-10mol% of silicon oxide in terms of SiO2 , 0.1-20mol% of nickel oxide in terms of NiO. When nickel oxide is added to ZnO-Al2 O3 -MgO-SiO2 resistor, the breakdown strength is notably increased. The current change by conduction time is displayed in the Fig., where 1 and 2 respectively indicate the curves of this resistor and the conventional resistor. In this Fig., 5.0mol% of NiO is added to this resistor. The conduction time of 95s of this resistor 1 is 1.7 times larger than 56s of the conventional resistor 2, thus indicating the larger conduction breakdown strength than that of conventional resistor 2.

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