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11. 发明专利

JP2002124510A PLASMA ETCHING EQUIPMENT 失效
公开(公告)号：JP2002124510A
公开(公告)日：2002-04-26
申请号：JP2000315232
申请日：2000-10-16
申请人： SCI TECHNOL KK
发明人： INOUE YOSHIHISA
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To execute an etching process in etching silicon or an oxide film without growing deposits on inner walls, thereby reducing the growth of particles. SOLUTION: An inner wall 1 built in a plasma process chamber is made of carbon or silicon and the etching equipment uses a plasma operative at a low pressure while the inner wall 1 is used in a floating condition.

12. 发明专利

JP2002121687A PLASMA TREATING SYSTEM 失效
公开(公告)号：JP2002121687A
公开(公告)日：2002-04-26
申请号：JP2000314160
申请日：2000-10-13
申请人： SCI TECHNOL KK
发明人： KUBOTA NAOKI
IPC分类号： C23F4/00 , H01L21/20 , H01L21/205 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a plasma treating system in which adverse effect caused by reaction products on the inner wall of a plasma treating chamber is effectively prevented, and also, the prevention effect lasts over a long period. SOLUTION: The inner wall 120 of a plasma treating chamber is formed of the stock having electric conductivity, and, d.c. voltage is applied thereto to prevent the accumulation of reaction products.

13. 发明专利

JP2006196507A Cleaning device of wafer 有权
标题翻译：清洗装置
公开(公告)号：JP2006196507A
公开(公告)日：2006-07-27
申请号：JP2005003700
申请日：2005-01-11
申请人： Daitron Technology Co Ltd , Sci Technol Kk , Kazuo Tanabe , サイエンステクノロジー株式会社 , ダイトロンテクノロジー株式会社 , 和夫田▲邉▼
发明人： TANABE KAZUO
IPC分类号： H01L21/304 , H01L21/683
摘要： PROBLEM TO BE SOLVED: To clean a wafer different in a diameter and a shape with a simple switch operation in a double-sided cleaning device of the wafer. SOLUTION: An upper brush (12) and a lower brush (13) are rotated in an opposite direction so that they are energized to a side while they clean the wafer (1) by sandwiching it. A swivel base (9) is arranged at the side of the upper/lower brushes so that it can turn. A drive roller which is brought into contact with a part of the side of the wafer and rotates the wafer exists in the swivel base. The swivel base is also provided with a plurality of drive units (3), (4), (5), (6) and (7) where arc-like curve faces which the drive roller forms are changed in accordance with the wafer and a square substrate unit (8) loading and moving a square substrate. The drive units corresponding to the wafer sent to the upper/lower brushes rotate on the swivel base so that they face the brushes so as to perform brush cleaning. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：通过在晶片的双面清洁装置中的简单的开关操作来清洁直径和形状不同的晶片。解决方案：上刷（12）和下刷（13）沿相反方向旋转，使得它们通过夹持来清洁晶片（1）而向一侧通电。旋转底座（9）设置在上/下刷子的侧面，使其能转动。与晶片的一部分侧接触并使晶片旋转的驱动辊存在于旋转基座中。旋转基座还设置有多个驱动单元（3），（4），（5），（6）和（7），其中根据晶片改变驱动辊形成的弧形曲面，正方形衬底单元（8），负载和移动正方形衬底。对应于发送到上/下刷的晶片的驱动单元在旋转底座上旋转，使得它们面对刷子，以进行刷清洁。版权所有（C）2006，JPO＆NCIPI

14. 发明专利

JP2006032815A Method and apparatus for sticking wafer on supporting substrate 审中-公开
标题翻译：用于在支撑基板上遮挡波浪的方法和装置
公开(公告)号：JP2006032815A
公开(公告)日：2006-02-02
申请号：JP2004212467
申请日：2004-07-21
申请人： Daitron Technology Co Ltd , Sci Technol Kk , Kazuo Tanabe , サイエンステクノロジー株式会社 , ダイトロンテクノロジー株式会社 , 和夫田▲邉▼
发明人： TANABE KAZUO
IPC分类号： H01L21/683 , H01L21/02 , H01L27/12
摘要： PROBLEM TO BE SOLVED: To stick a wafer processed thinly and having distortion in its smoothed state on a supporting substrate. SOLUTION: A method for sticking the wafer on the supporting substrate has a process for applying thickly a bonding agent to the circuit-pattern surface of the wafer (1), a process for so sucking and holding the nearly whole area of the rear surface of the wafer by a holding chuck (8) having a central chuck (9) and an outer peripheral chuck (10) as to eliminate nearly the distortion of the wafer (1), a process for mounting a supporting substrate (2) on a supporting stage (32) and so heating the supporting substrate as to be able to vaporize enough a solvent contained in the bonding agent, a process for so turning inversely the holding chuck (8) as to bond the wafer (1) to the supporting substrate (2), and a process for so moving thereafter immediately the sticking stage (32) to a cooling position as to bond compressively the wafer (1) in its smoothed state to the supporting substrate (2) and as to cool the bonding agent at the same time. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：将在其平滑状态下变形的薄片加工成薄片状的支撑基板。解决方案：用于将晶片粘贴在支撑基板上的方法具有将粘合剂厚度施加到晶片（1）的电路图案表面的方法，一种用于吸附和保持晶片的几乎整个区域的工艺通过具有中心卡盘（9）和外周卡盘（10）的保持卡盘（8）来消除晶片（1）的几乎变形的晶片后表面，安装支撑基板（2）的工艺，在支撑台（32）上，并且因此加热支撑基板以便能够使包含在粘合剂中的足够的溶剂蒸发;将保持卡盘（8）反向旋转以将晶片（1）接合到支撑基板（2），以及其后立即将粘贴台（32）移动到冷却位置以将其平滑状态的晶片（1）压缩到支撑基板（2）并且为了冷却粘合代理商在同一时间。版权所有（C）2006，JPO＆NCIPI

15. 发明专利

JP2005252042A Substrate holding device 审中-公开
标题翻译：基板保持装置
公开(公告)号：JP2005252042A
公开(公告)日：2005-09-15
申请号：JP2004061580
申请日：2004-03-05
申请人： Sci Technol Kk , サイエンステクノロジー株式会社
发明人： OGAWA YOSHIAKI , MINOWA HIROYUKI , YOSHIMURA TOSHIAKI , INOUE YOSHIHISA
IPC分类号： H01L21/683 , H01L21/22 , H01L21/324 , H01L21/68
摘要： PROBLEM TO BE SOLVED: To provide a simple substrate holding device which can hold a substrate with temperature distribution kept uniform in a substrate surface. SOLUTION: A holder 20 holds the substrate 10 inside a heat space for performing heat treatment for the substrate 10 serving as a sample. It has a holding part 22 for holding the substrate 10 by coming into contact with a part of a thickness part 10A of the substrate 10 and a supporting part 21 for supporting the holding part 22. The holding part 22 has a groove 25 composed of a tilting part 23 and a bottom 24. The tilting part 23 tilts to form at least the same angle as the edge face of the substrate 10 and comes into contact with the end of the thickness part 10A of the substrate 10. The bottom 24 is wider than the thickness part 10A and contact with the thickness part 10A of the substrate 10. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种简单的基板保持装置，其可以在基板表面中保持温度分布保持均匀的基板。解决方案：保持器20将基板10保持在用作为样品的基板10的热处理的热空间内。其具有用于通过与基板10的厚度部10A的一部分接触来保持基板10的保持部22和用于支撑保持部22的支撑部21.保持部22具有由25 倾斜部23和底部24.倾斜部23倾斜以形成与基板10的边缘面至少相同的角度并与基板10的厚度部分10A的端部接触。底部24更宽与厚度部分10A相比，并与基板10的厚度部分10A接触。版权所有（C）2005，JPO＆NCIPI

16. 发明专利

JP2004256864A FEEDBACK CONTROL SYSTEM FOR RAW MATERIAL FEED IN MOCVD SYSTEM 审中-公开
公开(公告)号：JP2004256864A
公开(公告)日：2004-09-16
申请号：JP2003048585
申请日：2003-02-26
申请人： BENESOL INC , TOKYO INST TECH , JAPAN PIONICS , SCI TECHNOL KK
发明人： YAMAGUCHI TAKAHIRO , FUNAKUBO HIROSHI , TAKAMATSU YUKICHI , TONARI KAZUAKI , INOUE YOSHIHISA , NANBA TORU
IPC分类号： C23C16/52 , C23C16/455 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To provide a means in a practical stage in the feedback control of feeding raw materials of MOCVD (gas mixture containing solvent element). SOLUTION: A raw material feed control system performs in-line measurement of raw gas mixture to be fed via a vaporizer/mixer 6 so as to deposit an organic metal thin film (e.g., PZT film) of the target composition by an FTIR analyzer 11 in a preceding stage of a CVD apparatus 8. A feedback control panel 13 calculates the gas concentration (the actually measured concentration) for each composition by applying a component correction formula to the result of measurement of the raw gas mixture, obtains the feedback value as the operation quantity to a valve to adjust the feed of each raw solution by the formula of ((reference (target) concentration/actually measured concentration)-1)×(first MFC value (flow rate)/maximum MFC value (flow rate))×MFC resolution, and feeds back the result to the MFC 5 side. COPYRIGHT: (C)2004,JPO&NCIPI

17. 发明专利

JP2002124509A ETCHING EQUIPMENT 失效
公开(公告)号：JP2002124509A
公开(公告)日：2002-04-26
申请号：JP2000314179
申请日：2000-10-13
申请人： SCI TECHNOL KK
发明人： KUBOTA NAOKI
IPC分类号： C23F4/00 , H01L21/302 , H01L21/306 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide etching equipment which is capable of uniformizing the treatment over a fine pattern part and reducing the damage and superior in productivity. SOLUTION: A high frequency power pulse compressor for compressing pulses converted from a high frequency power waveform in high frequency discharge, a plasma generator for generating a plasma using a high frequency power pulse-compressed by the pulse compressor, and a discharge electrode for etching with the plasma generated by the plasma generator.

18. 发明专利

JP2000258491A HEATING AND COOLING DEVICE AND ELECTRICAL CHARACTERISTIC EVALUATION DEVICE 失效
公开(公告)号：JP2000258491A
公开(公告)日：2000-09-22
申请号：JP6491299
申请日：1999-03-11
申请人： MITSUBISHI HEAVY IND LTD , SCI TECHNOL KK
发明人： NAKANO KOUJI , SAKAMOTO HITOSHI , YOSHIMURA TOSHIAKI
IPC分类号： G01R31/26 , B01J19/00 , F25D9/00 , G01R1/06 , G01R31/28 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To continuously shift a sample temperature from a low temperature to a high temperature. SOLUTION: This device is constructed of a heater 3 heating a sample 7 and a cooling unit 1 provided with a coolant pipe 2, through which coolant for cooling the sample 7 flows, and a coolant controlling means controlling a flow rate of the coolant flowing through the coolant pipe 2 and formed integrally with the heater 3. The heater 3 is constructed of a linear heater wire, and the heater wire and the coolant pipe 2 are arranged on the same plane and installed inside a vacuum container. A probe feeding electric current or voltage to the sample 7 when the heating and cooling device is brought into contact with the sample 7 surface for measuring an electrical characteristic of the sample 7 is arranged, and the probe is a coaxial type probe for vacuum.

19. 发明专利

JP2006073573A Wafer washing equipment with stocker 审中-公开
标题翻译：带储物器的WAFER洗衣设备
公开(公告)号：JP2006073573A
公开(公告)日：2006-03-16
申请号：JP2004251738
申请日：2004-08-31
申请人： Daitron Technology Co Ltd , Sci Technol Kk , Kazuo Tanabe , サイエンステクノロジー株式会社 , ダイトロンテクノロジー株式会社 , 和夫田▲邉▼
发明人： TANABE KAZUO
IPC分类号： H01L21/304 , B65G49/04 , B65G49/07 , H01L21/677
摘要： PROBLEM TO BE SOLVED: To efficiently wash wafers after a polishing process such as grinding, lapping, and polishing.
SOLUTION: The main body (3) of the washing equipment comprises a slider (4) for transferring wafers (1) after the polishing process, a stocker (5) which is so installed as to move up and down to dip and hold the wafers into water, and a scrub washer (6) for washing the wafers taken out of the stocker (5). The slider section can be inserted between wafer holding shelves of the stocker (5). The wafers after the polishing process are all transferred into the stocker (5), and then are dipped into water. Thereafter, the stocker (5) is raised out of water. Then, the slider is inserted into the stocker, and the wafers are sent out to the scrub washer one at a time beginning from the one in the most upper stage, and then are washed.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：在研磨，研磨和研磨之类的抛光工艺之后有效地洗涤晶片。解决方案：洗涤设备的主体（3）包括用于在抛光过程之后传送晶片（1）的滑块（4），安装成上下移动的储料器（5）将晶片保持在水中，以及洗涤洗涤器（6），用于洗涤从储带架（5）中取出的晶片。滑块部分可以插入储料器（5）的晶片保持架之间。抛光处理后的晶片全部转移到贮存器（5）中，然后浸入水中。此后，储存器（5）从水中升出。然后，将滑块插入储料器中，并且将晶片从最上层开始的时间一次送出到洗涤洗涤器中，然后进行清洗。版权所有（C）2006，JPO＆NCIPI

20. 发明专利

JP2005183859A Lift off method and device 有权
标题翻译：提升方法和设备
公开(公告)号：JP2005183859A
公开(公告)日：2005-07-07
申请号：JP2003426078
申请日：2003-12-24
申请人： Daitron Technology Co Ltd , Sci Technol Kk , Kazuo Tanabe , サイエンステクノロジー株式会社 , ダイトロンテクノロジー株式会社 , 和夫田▲邉▼
发明人： TANABE KAZUO
IPC分类号： H01L21/306
摘要： PROBLEM TO BE SOLVED: To provide a lift off method and device capable of uniformly processing the lift off of all the surface of a large diameter wafer, requiring a few quantity of a parting liquid and a displacement liquid, causing no reattachment of an exfoliated metal film, and efficiently processing even a cracked wafer.
SOLUTION: A dip bath unit (3) is formed by adjoining an exfoliating bath (5) to a displacing bath (6) and covering the upper surface of them with a chamber (7). A wafer holder (12) capable of holding the wafer in a horizontal and vertical position is in the chamber. The wafer holder (12) can move vertically and horizontally. The wafer is dipped in the exfoliating bath (5) in a horizontal posture and irradiated by an ultrasonic wave along the surface of the wafer after a resist is swelled. After that, the exfoliating liquid is excluded at a stretch and the wafer is taken out of the exfoliating bath with a shower of the clean exfoliating liquid squirted. The wafer is dipped further in the displacing bath (6) and cleaned nearly in the same way. The broken wafer is housed in a holder for a fragment and the holder for the fragment is fixed to the wafer holder (12) and dip processed.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了提供能够均匀地处理大直径晶片的所有表面的剥离的剥离方法和装置，需要少量的分离液体和置换液体，不会重新附着剥离的金属膜，甚至有效地加工裂纹晶片。解决方案：通过将剥离浴（5）邻接到置换浴（6）并用室（7）覆盖它们的上表面而形成浸渍浴单元（3）。能够将晶片保持在水平和垂直位置的晶片保持器（12）在腔室中。晶片支架（12）可以垂直和水平移动。将晶片以水平姿势浸入去角质浴（5）中，并且在抗蚀剂膨胀后，沿着晶片的表面用超声波照射晶片。之后，一段时间除去去角质液体，并且用喷雾的清洁去角质液体的淋浴将晶片从剥离浴中取出。将晶片进一步浸入置换浴（6）中，几乎以相同的方式进行清洗。破碎的晶片被容纳在用于碎片的保持器中，并且用于碎片的保持器固定到晶片保持器（12）并浸渍处理。版权所有（C）2005，JPO＆NCIPI

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