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1. 发明专利

JP2007149929A Single wafer pulling and drying apparatus 审中-公开
标题翻译：单辊牵引和干燥装置
公开(公告)号：JP2007149929A
公开(公告)日：2007-06-14
申请号：JP2005341775
申请日：2005-11-28
申请人： Daitron Technology Co Ltd , Sci Technol Kk , Kazuo Tanabe , サイエンステクノロジー株式会社 , ダイトロンテクノロジー株式会社 , 和夫田▲邉▼
发明人： TANABE KAZUO
IPC分类号： H01L21/304
摘要： PROBLEM TO BE SOLVED: To surely dry large size wafers.
SOLUTION: A drying chamber (2) is provided at the upper side of a dip tank (1) to and from which hot pure water is charged and discharged under the overflow condition. This drying chamber (2) has a heater (7) for heating the wafer which has been just pulled up from the dip tank (1) up to about 150° to 400°C, and an N
2 gas injection nozzle (9) for setting the inside of chamber to the N
2 atmosphere. Moreover, a vapor condensating means is provided just above the dip tank (1) in order to prevent the vapor generated from the overflow surface to rise within the drying chamber (2). The wafer pulled up from the overflow surface is heated up to higher temperature with the heater (7), is separated from water at the surface thereof with a surface tension, and is dried up in the state where no particle is adhered.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：确定干燥大尺寸晶圆。解决方案：在浸渍槽（1）的上侧设置有干燥室（2），在这种溢流状态下，热纯水被充满和排出。该干燥室（2）具有加热器（7），该加热器（7）用于加热刚刚从浸渍槽（1）拉出的晶片直到约150℃至400℃，并且N 2 用于将室内设置到N 2 气氛的气体喷射喷嘴（9）。此外，在浸渍槽（1）正上方设置蒸气冷凝装置，以防止从溢流面产生的蒸气在干燥室（2）内升高。从加热器（7）将从溢流表面拉出的晶片加热到更高的温度，与其表面的水分离表面张力，并且在没有颗粒附着的状态下干燥。版权所有（C）2007，JPO＆INPIT

2. 发明专利

JP2004260023A Process for depositing ferroelectric film 审中-公开
公开(公告)号：JP2004260023A
公开(公告)日：2004-09-16
申请号：JP2003050182
申请日：2003-02-27
申请人： Benesol Inc , Japan Pionics Co Ltd , Sci Technol Kk , Tokyo Institute Of Technology , サイエンステクノロジー株式会社 , 国立大学法人東京工業大学 , 日本パイオニクス株式会社 , 株式会社ベネソル
发明人： FUNAKUBO HIROSHI , INOUE YOSHIHISA , NANBA TORU , YAMAGUCHI TAKAHIRO , TAKAMATSU YUKICHI , YONEYAMA GAKUO , ASANO AKIYOSHI , IWATA MITSUHIRO
IPC分类号： C23C16/18 , C23C16/448 , H01L21/31 , H01L21/316
摘要： PROBLEM TO BE SOLVED: To provide a process for depositing a ferroelectric film of PZT, BST, SBT, PLZT, or the like, having excellent quality and purity in which mixture of particles due to deposition of a solid CVD material generated during supply of vaporized material is reduced.
SOLUTION: The solid CVD material is dissolved into tetrahydrofuran and admixed with an organic solvent having a boiling point higher than that of tetrahydrofuran in the prestage of a vaporizer. It is then vaporized and supplied to a semiconductor production system where a ferroelectric film is deposited.
COPYRIGHT: (C)2004,JPO&NCIPI

3. 发明专利

JP2007160239A Glass hard disk-washing device 审中-公开
标题翻译：玻璃硬盘清洗装置
公开(公告)号：JP2007160239A
公开(公告)日：2007-06-28
申请号：JP2005361185
申请日：2005-12-15
申请人： Daitron Technology Co Ltd , Sci Technol Kk , Kazuo Tanabe , サイエンステクノロジー株式会社 , ダイトロンテクノロジー株式会社 , 和夫田▲邉▼
发明人： TANABE KAZUO
IPC分类号： B08B1/04 , B08B1/02 , B08B3/02 , B08B7/04 , G11B5/84
摘要： PROBLEM TO BE SOLVED: To provide a glass hard disk-washing device which efficiently washes glass hard disks which are different in size.
SOLUTION: A hard disk (1) sent out from a loader cassette (2) is conveyed with a first water bearing (6). A first detection gap (8) is provided, and a second water bearing (7) is connected to the first detection gap (8), and the hard disk (1) is conveyed to a scrub washing part. In the scrub washing part, the hard disk (1) contacts the slant surface of a drive roller (10) with a taper and rotates. The hard disk posterior to the scrub washing is accommodated in an unloader cassette (31) with a fourth water bearing (26) connected to a third water bearing (24) via a second detection gap (27). There are sensors (9) and (29), which detect the hard disk from its lateral direction, in the first detection gap (8) and in the second detection gap (27), respectively.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种高效洗涤尺寸不同的玻璃硬盘的玻璃硬盘清洗装置。
解决方案：从装载机盒（2）发出的硬盘（1）用第一水轴承（6）输送。提供第一检测间隙（8），并且第二水轴承（7）连接到第一检测间隙（8），并且将硬盘（1）输送到洗涤洗涤部分。在洗涤洗涤部分中，硬盘（1）与锥形的驱动辊（10）的倾斜表面接触并旋转。洗涤洗涤后面的硬盘容纳在卸载器盒（31）中，第四水轴承（26）经由第二检测间隙（27）连接到第三水轴承（24）。传感器（9）和（29）分别在第一检测间隙（8）和第二检测间隙（27）中从其横向检测硬盘。版权所有（C）2007，JPO＆INPIT

4. 发明专利

JP2006295020A Apparatus and method for forming oxide film 审中-公开
标题翻译：用于形成氧化膜的装置和方法
公开(公告)号：JP2006295020A
公开(公告)日：2006-10-26
申请号：JP2005116529
申请日：2005-04-14
申请人： Sci Technol Kk , サイエンステクノロジー株式会社
发明人： YOSHIMURA TOSHIAKI , OGAWA YOSHIAKI , MINOWA HIROYUKI , MORII MITSURU , NAITO YASUSHI
IPC分类号： H01L21/31 , C23C16/40 , C23C16/448 , H01L21/316
摘要： PROBLEM TO BE SOLVED: To provide an apparatus and a method for forming an oxide film wherein a high-quality oxide film can be formed and management is facilitated.
SOLUTION: A vaporizer 21 provided externally to a pressure-resistant container 13 generates water vapor, which is in turn supplied into warmed and pressurized the pressure-resistant container 13. Therefore, the atmosphere around a silicon wafer A is constant throughout all the steps of an oxide film formation process, and an oxide film formed over the silicon wafer A is of high quality. Since water is used, the management of a quantity consumed and safe management are facilitated.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种形成氧化膜的装置和方法，其中可以形成高质量的氧化物膜并且便于管理。解决方案：设置在耐压容器13外部的蒸发器21产生水蒸汽，水蒸气又被供给加热和加压耐压容器13.因此，硅晶片A周围的气氛在所有氧化膜形成工艺的步骤和形成在硅晶片A上的氧化膜是高质量的。由于使用水，便于管理消耗量和安全管理。版权所有（C）2007，JPO＆INPIT

5. 发明专利

JP2004260024A Vapor phase epitaxial growth process 审中-公开
标题翻译：蒸气相外延生长过程
公开(公告)号：JP2004260024A
公开(公告)日：2004-09-16
申请号：JP2003050183
申请日：2003-02-27
申请人： Benesol Inc , Japan Pionics Co Ltd , Sci Technol Kk , Tokyo Inst Of Technol , サイエンステクノロジー株式会社 , 日本パイオニクス株式会社 , 東京工業大学長 , 株式会社ベネソル
发明人： FUNAKUBO HIROSHI , INOUE YOSHIHISA , NANBA TORU , YAMAGUCHI TAKAHIRO , TAKAMATSU YUKICHI , TONARI KAZUAKI
IPC分类号： C23C16/40 , C23C16/52 , H01L21/31 , H01L21/316
摘要： PROBLEM TO BE SOLVED: To provide a vapor phase epitaxial growth process producing a ferroelectric film of PZT, BST, SBT or PLZT having excellent quality and purity by supplying a preset quantity of a solid CVD material to a semiconductor production system over a long time regardless of the adhesion state of the solid CVD material to the material channel in a vaporizer even when a solid CVD material dissolved into an organic solvent is employed.
SOLUTION: Each vaporization gas of a CVD material being employed for depositing the ferroelectric film is fed to a vaporization gas mixing means while measuring the concentration and/or flow rate of at least one kind of CVD material using FTIR. Mixed vaporization gas is fed to the semiconductor production system where vapor phase epitaxial growth is conducted.
COPYRIGHT: (C)2004,JPO&NCIPI
摘要翻译：要解决的问题：为了提供通过向半导体生产系统提供预定量的固体CVD材料，通过在半导体生产系统中提供预定量的固体CVD材料来提供产生具有优良品质和纯度的PZT，BST，SBT或PLZT的铁电薄膜的气相外延生长工艺即使使用溶解在有机溶剂中的固体CVD材料，无论固体CVD材料在蒸发器中的材料通道的粘附状态如何长。解决方案：使用FTIR测量至少一种CVD材料的浓度和/或流速，将用于沉积铁电体膜的CVD材料的每个气化气体进料到蒸发气体混合装置。混合汽化气体被供给到进行气相外延生长的半导体生产系统中。版权所有（C）2004，JPO＆NCIPI

6. 发明专利

JP2004259905A Reactor for vapor growth deposition 审中-公开
公开(公告)号：JP2004259905A
公开(公告)日：2004-09-16
申请号：JP2003048489
申请日：2003-02-26
申请人： Benesol Inc , Japan Pionics Co Ltd , Sci Technol Kk , Tokyo Institute Of Technology , サイエンステクノロジー株式会社 , 国立大学法人東京工業大学 , 日本パイオニクス株式会社 , 株式会社ベネソル
发明人： FUNAKUBO HIROSHI , INOUE YOSHIHISA , NANBA TORU , TAKAMATSU YUKICHI , TONARI KAZUAKI , YAMAGUCHI TAKAHIRO
IPC分类号： C23C16/44 , C23C16/448 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To enable formation of a uniform film including no particles by preventing that particles are generated due to the flow of gas into a substrate transfer port within a reaction chamber and thereby uniform flow of gas at a cylindrical and linear nozzle is prevented.
SOLUTION: A transfer port cover (shielding means) 16 is attached in the side of reaction chamber 11 of a transfer gate valve 3 for separating a vacuum load lock chamber 4 and the reaction chamber 11. This transfer port cover 16 is operated vertically with an air cylinder 15 from an external side of the reaction chamber 11 through a transfer port cover holding rod 13 and a vacuum bellow flange 14. Moreover, since four net type members or hole opening members 17 are provided as the unifying means at the internal side of the nozzle of reactor, a uniform film can be formed with less particles.
COPYRIGHT: (C)2004,JPO&NCIPI

7. 发明专利

JP4308778B2 Cleaning equipment of the wafer 有权
公开(公告)号：JP4308778B2
公开(公告)日：2009-08-05
申请号：JP2005003700
申请日：2005-01-11
申请人：サイエンステクノロジー株式会社 , ダイトロンテクノロジー株式会社 , 和夫田▲邉▼
发明人：和夫田▲邉▼
IPC分类号： H01L21/304 , H01L21/683

8. 发明专利

JP2006073573A Wafer washing equipment with stocker 审中-公开
标题翻译：带储物器的WAFER洗衣设备
公开(公告)号：JP2006073573A
公开(公告)日：2006-03-16
申请号：JP2004251738
申请日：2004-08-31
申请人： Daitron Technology Co Ltd , Sci Technol Kk , Kazuo Tanabe , サイエンステクノロジー株式会社 , ダイトロンテクノロジー株式会社 , 和夫田▲邉▼
发明人： TANABE KAZUO
IPC分类号： H01L21/304 , B65G49/04 , B65G49/07 , H01L21/677
摘要： PROBLEM TO BE SOLVED: To efficiently wash wafers after a polishing process such as grinding, lapping, and polishing.
SOLUTION: The main body (3) of the washing equipment comprises a slider (4) for transferring wafers (1) after the polishing process, a stocker (5) which is so installed as to move up and down to dip and hold the wafers into water, and a scrub washer (6) for washing the wafers taken out of the stocker (5). The slider section can be inserted between wafer holding shelves of the stocker (5). The wafers after the polishing process are all transferred into the stocker (5), and then are dipped into water. Thereafter, the stocker (5) is raised out of water. Then, the slider is inserted into the stocker, and the wafers are sent out to the scrub washer one at a time beginning from the one in the most upper stage, and then are washed.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：在研磨，研磨和研磨之类的抛光工艺之后有效地洗涤晶片。解决方案：洗涤设备的主体（3）包括用于在抛光过程之后传送晶片（1）的滑块（4），安装成上下移动的储料器（5）将晶片保持在水中，以及洗涤洗涤器（6），用于洗涤从储带架（5）中取出的晶片。滑块部分可以插入储料器（5）的晶片保持架之间。抛光处理后的晶片全部转移到贮存器（5）中，然后浸入水中。此后，储存器（5）从水中升出。然后，将滑块插入储料器中，并且将晶片从最上层开始的时间一次送出到洗涤洗涤器中，然后进行清洗。版权所有（C）2006，JPO＆NCIPI

9. 发明专利

JP2005183859A Lift off method and device 有权
标题翻译：提升方法和设备
公开(公告)号：JP2005183859A
公开(公告)日：2005-07-07
申请号：JP2003426078
申请日：2003-12-24
申请人： Daitron Technology Co Ltd , Sci Technol Kk , Kazuo Tanabe , サイエンステクノロジー株式会社 , ダイトロンテクノロジー株式会社 , 和夫田▲邉▼
发明人： TANABE KAZUO
IPC分类号： H01L21/306
摘要： PROBLEM TO BE SOLVED: To provide a lift off method and device capable of uniformly processing the lift off of all the surface of a large diameter wafer, requiring a few quantity of a parting liquid and a displacement liquid, causing no reattachment of an exfoliated metal film, and efficiently processing even a cracked wafer.
SOLUTION: A dip bath unit (3) is formed by adjoining an exfoliating bath (5) to a displacing bath (6) and covering the upper surface of them with a chamber (7). A wafer holder (12) capable of holding the wafer in a horizontal and vertical position is in the chamber. The wafer holder (12) can move vertically and horizontally. The wafer is dipped in the exfoliating bath (5) in a horizontal posture and irradiated by an ultrasonic wave along the surface of the wafer after a resist is swelled. After that, the exfoliating liquid is excluded at a stretch and the wafer is taken out of the exfoliating bath with a shower of the clean exfoliating liquid squirted. The wafer is dipped further in the displacing bath (6) and cleaned nearly in the same way. The broken wafer is housed in a holder for a fragment and the holder for the fragment is fixed to the wafer holder (12) and dip processed.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了提供能够均匀地处理大直径晶片的所有表面的剥离的剥离方法和装置，需要少量的分离液体和置换液体，不会重新附着剥离的金属膜，甚至有效地加工裂纹晶片。解决方案：通过将剥离浴（5）邻接到置换浴（6）并用室（7）覆盖它们的上表面而形成浸渍浴单元（3）。能够将晶片保持在水平和垂直位置的晶片保持器（12）在腔室中。晶片支架（12）可以垂直和水平移动。将晶片以水平姿势浸入去角质浴（5）中，并且在抗蚀剂膨胀后，沿着晶片的表面用超声波照射晶片。之后，一段时间除去去角质液体，并且用喷雾的清洁去角质液体的淋浴将晶片从剥离浴中取出。将晶片进一步浸入置换浴（6）中，几乎以相同的方式进行清洗。破碎的晶片被容纳在用于碎片的保持器中，并且用于碎片的保持器固定到晶片保持器（12）并浸渍处理。版权所有（C）2005，JPO＆NCIPI

10. 发明专利

JP2005136285A Method and device for sticking wafer 审中-公开
标题翻译：用于阻挡波浪的方法和装置
公开(公告)号：JP2005136285A
公开(公告)日：2005-05-26
申请号：JP2003371944
申请日：2003-10-31
申请人： Daitron Technology Co Ltd , Sci Technol Kk , Kazuo Tanabe , サイエンステクノロジー株式会社 , ダイトロンテクノロジー株式会社 , 和夫田▲邉▼
发明人： TANABE KAZUO
IPC分类号： H01L21/02
摘要： PROBLEM TO BE SOLVED: To stick two wafers to one another effectively with high accuracy. SOLUTION: Spin cleaning units (9), (10) for cleaning and drying two wafers (2L), (2R) respectively are provided, and a pair of sticking chucks (16), (17) are provided between the cleaning units (9) and (10). The sticking chucks (16), (17) can be moved to a receiving position and a sticking position. The cleaned and dried wafers are respectively chucked and retained to the sticking chucks (16), (17) in a standing state at the receiving position to be aligned. After the alignment, the sticking chucks (16), (17) are moved to the sticking position opposed to the wafers (2L), (2R). At the sticking position, the sticking chucks (16), (17) are closed to one another to stick the wafers (2L), (2R) to one another. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：以高精度有效地将两个晶片相互贴合。解决方案：提供用于分别清洁和干燥两个晶片（2L），（2R）的旋转清洁单元（9），（10），并且在清洁之间提供一对粘贴卡盘（16），（17）单位（9）和（10）。粘贴卡盘（16），（17）可以移动到接收位置和粘贴位置。清洁和干燥的晶片分别被夹持并且在处于接收位置的待机状态下保持到粘贴卡盘（16），（17）以对准。在对准之后，粘贴卡盘（16），（17）移动到与晶片（2L），（2R）相对的粘贴位置。在粘贴位置，粘结卡盘（16），（17）彼此封闭，以将晶片（2L），（2R）彼此粘合。版权所有（C）2005，JPO＆NCIPI

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