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1. 发明专利

JP2004256864A FEEDBACK CONTROL SYSTEM FOR RAW MATERIAL FEED IN MOCVD SYSTEM 审中-公开
公开(公告)号：JP2004256864A
公开(公告)日：2004-09-16
申请号：JP2003048585
申请日：2003-02-26
申请人： BENESOL INC , TOKYO INST TECH , JAPAN PIONICS , SCI TECHNOL KK
发明人： YAMAGUCHI TAKAHIRO , FUNAKUBO HIROSHI , TAKAMATSU YUKICHI , TONARI KAZUAKI , INOUE YOSHIHISA , NANBA TORU
IPC分类号： C23C16/52 , C23C16/455 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To provide a means in a practical stage in the feedback control of feeding raw materials of MOCVD (gas mixture containing solvent element). SOLUTION: A raw material feed control system performs in-line measurement of raw gas mixture to be fed via a vaporizer/mixer 6 so as to deposit an organic metal thin film (e.g., PZT film) of the target composition by an FTIR analyzer 11 in a preceding stage of a CVD apparatus 8. A feedback control panel 13 calculates the gas concentration (the actually measured concentration) for each composition by applying a component correction formula to the result of measurement of the raw gas mixture, obtains the feedback value as the operation quantity to a valve to adjust the feed of each raw solution by the formula of ((reference (target) concentration/actually measured concentration)-1)×(first MFC value (flow rate)/maximum MFC value (flow rate))×MFC resolution, and feeds back the result to the MFC 5 side. COPYRIGHT: (C)2004,JPO&NCIPI

2. 发明专利

JP2004260023A Process for depositing ferroelectric film 审中-公开
公开(公告)号：JP2004260023A
公开(公告)日：2004-09-16
申请号：JP2003050182
申请日：2003-02-27
申请人： Benesol Inc , Japan Pionics Co Ltd , Sci Technol Kk , Tokyo Institute Of Technology , サイエンステクノロジー株式会社 , 国立大学法人東京工業大学 , 日本パイオニクス株式会社 , 株式会社ベネソル
发明人： FUNAKUBO HIROSHI , INOUE YOSHIHISA , NANBA TORU , YAMAGUCHI TAKAHIRO , TAKAMATSU YUKICHI , YONEYAMA GAKUO , ASANO AKIYOSHI , IWATA MITSUHIRO
IPC分类号： C23C16/18 , C23C16/448 , H01L21/31 , H01L21/316
摘要： PROBLEM TO BE SOLVED: To provide a process for depositing a ferroelectric film of PZT, BST, SBT, PLZT, or the like, having excellent quality and purity in which mixture of particles due to deposition of a solid CVD material generated during supply of vaporized material is reduced.
SOLUTION: The solid CVD material is dissolved into tetrahydrofuran and admixed with an organic solvent having a boiling point higher than that of tetrahydrofuran in the prestage of a vaporizer. It is then vaporized and supplied to a semiconductor production system where a ferroelectric film is deposited.
COPYRIGHT: (C)2004,JPO&NCIPI

3. 发明专利

JP2004260024A Vapor phase epitaxial growth process 审中-公开
标题翻译：蒸气相外延生长过程
公开(公告)号：JP2004260024A
公开(公告)日：2004-09-16
申请号：JP2003050183
申请日：2003-02-27
申请人： Benesol Inc , Japan Pionics Co Ltd , Sci Technol Kk , Tokyo Inst Of Technol , サイエンステクノロジー株式会社 , 日本パイオニクス株式会社 , 東京工業大学長 , 株式会社ベネソル
发明人： FUNAKUBO HIROSHI , INOUE YOSHIHISA , NANBA TORU , YAMAGUCHI TAKAHIRO , TAKAMATSU YUKICHI , TONARI KAZUAKI
IPC分类号： C23C16/40 , C23C16/52 , H01L21/31 , H01L21/316
摘要： PROBLEM TO BE SOLVED: To provide a vapor phase epitaxial growth process producing a ferroelectric film of PZT, BST, SBT or PLZT having excellent quality and purity by supplying a preset quantity of a solid CVD material to a semiconductor production system over a long time regardless of the adhesion state of the solid CVD material to the material channel in a vaporizer even when a solid CVD material dissolved into an organic solvent is employed.
SOLUTION: Each vaporization gas of a CVD material being employed for depositing the ferroelectric film is fed to a vaporization gas mixing means while measuring the concentration and/or flow rate of at least one kind of CVD material using FTIR. Mixed vaporization gas is fed to the semiconductor production system where vapor phase epitaxial growth is conducted.
COPYRIGHT: (C)2004,JPO&NCIPI
摘要翻译：要解决的问题：为了提供通过向半导体生产系统提供预定量的固体CVD材料，通过在半导体生产系统中提供预定量的固体CVD材料来提供产生具有优良品质和纯度的PZT，BST，SBT或PLZT的铁电薄膜的气相外延生长工艺即使使用溶解在有机溶剂中的固体CVD材料，无论固体CVD材料在蒸发器中的材料通道的粘附状态如何长。解决方案：使用FTIR测量至少一种CVD材料的浓度和/或流速，将用于沉积铁电体膜的CVD材料的每个气化气体进料到蒸发气体混合装置。混合汽化气体被供给到进行气相外延生长的半导体生产系统中。版权所有（C）2004，JPO＆NCIPI

4. 发明专利

JP2004259905A Reactor for vapor growth deposition 审中-公开
公开(公告)号：JP2004259905A
公开(公告)日：2004-09-16
申请号：JP2003048489
申请日：2003-02-26
申请人： Benesol Inc , Japan Pionics Co Ltd , Sci Technol Kk , Tokyo Institute Of Technology , サイエンステクノロジー株式会社 , 国立大学法人東京工業大学 , 日本パイオニクス株式会社 , 株式会社ベネソル
发明人： FUNAKUBO HIROSHI , INOUE YOSHIHISA , NANBA TORU , TAKAMATSU YUKICHI , TONARI KAZUAKI , YAMAGUCHI TAKAHIRO
IPC分类号： C23C16/44 , C23C16/448 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To enable formation of a uniform film including no particles by preventing that particles are generated due to the flow of gas into a substrate transfer port within a reaction chamber and thereby uniform flow of gas at a cylindrical and linear nozzle is prevented.
SOLUTION: A transfer port cover (shielding means) 16 is attached in the side of reaction chamber 11 of a transfer gate valve 3 for separating a vacuum load lock chamber 4 and the reaction chamber 11. This transfer port cover 16 is operated vertically with an air cylinder 15 from an external side of the reaction chamber 11 through a transfer port cover holding rod 13 and a vacuum bellow flange 14. Moreover, since four net type members or hole opening members 17 are provided as the unifying means at the internal side of the nozzle of reactor, a uniform film can be formed with less particles.
COPYRIGHT: (C)2004,JPO&NCIPI

5. 发明专利

JP2005252042A Substrate holding device 审中-公开
标题翻译：基板保持装置
公开(公告)号：JP2005252042A
公开(公告)日：2005-09-15
申请号：JP2004061580
申请日：2004-03-05
申请人： Sci Technol Kk , サイエンステクノロジー株式会社
发明人： OGAWA YOSHIAKI , MINOWA HIROYUKI , YOSHIMURA TOSHIAKI , INOUE YOSHIHISA
IPC分类号： H01L21/683 , H01L21/22 , H01L21/324 , H01L21/68
摘要： PROBLEM TO BE SOLVED: To provide a simple substrate holding device which can hold a substrate with temperature distribution kept uniform in a substrate surface. SOLUTION: A holder 20 holds the substrate 10 inside a heat space for performing heat treatment for the substrate 10 serving as a sample. It has a holding part 22 for holding the substrate 10 by coming into contact with a part of a thickness part 10A of the substrate 10 and a supporting part 21 for supporting the holding part 22. The holding part 22 has a groove 25 composed of a tilting part 23 and a bottom 24. The tilting part 23 tilts to form at least the same angle as the edge face of the substrate 10 and comes into contact with the end of the thickness part 10A of the substrate 10. The bottom 24 is wider than the thickness part 10A and contact with the thickness part 10A of the substrate 10. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种简单的基板保持装置，其可以在基板表面中保持温度分布保持均匀的基板。解决方案：保持器20将基板10保持在用作为样品的基板10的热处理的热空间内。其具有用于通过与基板10的厚度部10A的一部分接触来保持基板10的保持部22和用于支撑保持部22的支撑部21.保持部22具有由25 倾斜部23和底部24.倾斜部23倾斜以形成与基板10的边缘面至少相同的角度并与基板10的厚度部分10A的端部接触。底部24更宽与厚度部分10A相比，并与基板10的厚度部分10A接触。版权所有（C）2005，JPO＆NCIPI

6. 发明专利

JP2002124510A PLASMA ETCHING EQUIPMENT 失效
公开(公告)号：JP2002124510A
公开(公告)日：2002-04-26
申请号：JP2000315232
申请日：2000-10-16
申请人： SCI TECHNOL KK
发明人： INOUE YOSHIHISA
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To execute an etching process in etching silicon or an oxide film without growing deposits on inner walls, thereby reducing the growth of particles. SOLUTION: An inner wall 1 built in a plasma process chamber is made of carbon or silicon and the etching equipment uses a plasma operative at a low pressure while the inner wall 1 is used in a floating condition.

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