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1. 发明专利

JP2000258491A HEATING AND COOLING DEVICE AND ELECTRICAL CHARACTERISTIC EVALUATION DEVICE 失效
公开(公告)号：JP2000258491A
公开(公告)日：2000-09-22
申请号：JP6491299
申请日：1999-03-11
申请人： MITSUBISHI HEAVY IND LTD , SCI TECHNOL KK
发明人： NAKANO KOUJI , SAKAMOTO HITOSHI , YOSHIMURA TOSHIAKI
IPC分类号： G01R31/26 , B01J19/00 , F25D9/00 , G01R1/06 , G01R31/28 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To continuously shift a sample temperature from a low temperature to a high temperature. SOLUTION: This device is constructed of a heater 3 heating a sample 7 and a cooling unit 1 provided with a coolant pipe 2, through which coolant for cooling the sample 7 flows, and a coolant controlling means controlling a flow rate of the coolant flowing through the coolant pipe 2 and formed integrally with the heater 3. The heater 3 is constructed of a linear heater wire, and the heater wire and the coolant pipe 2 are arranged on the same plane and installed inside a vacuum container. A probe feeding electric current or voltage to the sample 7 when the heating and cooling device is brought into contact with the sample 7 surface for measuring an electrical characteristic of the sample 7 is arranged, and the probe is a coaxial type probe for vacuum.

2. 发明专利

JP2006152414A Metallic film, production method of metallic film, metallic film production apparatus, plasma treatment method, and etching apparatus 有权
标题翻译：金属膜，金属膜生产方法，金属膜生产设备，等离子体处理方法和蚀刻设备
公开(公告)号：JP2006152414A
公开(公告)日：2006-06-15
申请号：JP2004348206
申请日：2004-12-01
申请人： Mitsubishi Heavy Ind Ltd , 三菱重工業株式会社
发明人： OBA YOSHIYUKI , SAKAMOTO HITOSHI , OGURA KEN , ZEN KIEI
IPC分类号： C23C16/452 , C23C16/08 , H01L21/285
摘要： PROBLEM TO BE SOLVED: To provide a metallic film in which the damage to an undercoat film is reduced at the time of etching, a production method of the metallic film, a metallic film production apparatus, a plasma treatment method, and an etching apparatus. SOLUTION: Plasma is generated by supplying Xe prior to supplying of Cl 2 and thereafter a free radical (Cl*) of the Cl 2 is generated by gradually increasing the amount of gas containing Cl 2 up to a prescribed flow rate and supplying the gas. The Cl 2 is gradually increased up to the prescribed flow rate by controlling the flow rate of the Xe such that the molar ratio of Cl* and a precursor of the metal component generated by the Cl* attains a prescribed value, and thereafter the flow rate of the Xe is gradually decreased so as to maintain the molar ratio and thereby, the Cl* is deactivated by the Xe* in an initial period of deposition and the metallic film is produced on a substrate without exerting damage to the undercoat film. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了提供在蚀刻时对底涂膜的损伤降低的金属膜，金属膜的制造方法，金属膜制造装置，等离子体处理方法和蚀刻装置。解决方案：在提供Cl 2 之前通过供给Xe产生等离子体，然后通过逐渐增加Cl 2 SBB的自由基（Cl *）来产生Cl 含有Cl 2 的气体达到规定的流速并供给气体。 Cl 2 通过控制Xe的流量逐渐增加到规定的流量，使得Cl *和由Cl *产生的金属组分的前体的摩尔比达到规定的值，然后逐渐降低Xe的流量，以保持摩尔比，从而在初始沉积期间由于Xe *使Cl *失活，并且金属膜在基材上产生而不产生损伤到底漆膜。版权所有（C）2006，JPO＆NCIPI

3. 发明专利

JP2006099403A Random number generator 审中-公开
标题翻译：随机数发电机
公开(公告)号：JP2006099403A
公开(公告)日：2006-04-13
申请号：JP2004284363
申请日：2004-09-29
申请人： Mitsubishi Heavy Ind Ltd , 三菱重工業株式会社
发明人： MATSUBARA MASAHIRO , SAKAMOTO HITOSHI , TAWARA SATOSHI , AKITA YASUHIRO , NAKANO KOUJI , NIIMA SATOSHI , WADA TARO
IPC分类号： G06F7/58 , G09C1/00
摘要： PROBLEM TO BE SOLVED: To provide a random number generator capable of generating random numbers whose periodicity is low. SOLUTION: This random number generator is provided with: a film 3 whose surface shape is of a random nano-meter scale, an observing means 4 for observing the surface shape of the film 3; and an arithmetic part 5 for calculating random numbers based on the information of the observed surface shape. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：解决的问题：提供能够生成周期性低的随机数的随机数发生器。解决方案：该随机数发生器具有：表面形状为随机纳米级的膜3，用于观察膜3的表面形状的观察装置4; 以及用于基于观察到的表面形状的信息计算随机数的算术部分5。版权所有（C）2006，JPO＆NCIPI

4. 发明专利

JP2006002197A Method and apparatus for preparing metallic film, and apparatus for preparing layered film 有权
标题翻译：制备金属膜的方法和装置，以及制备薄膜的装置
公开(公告)号：JP2006002197A
公开(公告)日：2006-01-05
申请号：JP2004178117
申请日：2004-06-16
申请人： Mitsubishi Heavy Ind Ltd , 三菱重工業株式会社
发明人： OBA YOSHIYUKI , SAKAMOTO HITOSHI , TONEGAWA YUTAKA , OGURA KEN , HACHIMAN NAOKI
IPC分类号： C23C16/06 , C23C16/24 , C23C16/28 , H01L21/28 , H01L21/285
摘要： PROBLEM TO BE SOLVED: To provide a method for preparing a metallic film, which forms the film at a high speed without damaging a substrate; an apparatus therefor; and an apparatus for preparing a layered film.
SOLUTION: The method for preparing the metallic film comprises the steps of: placing a substrate 3 in a chamber 1 in which a pressure can be controlled; supplying a halogen-based source gas containing B or Si onto a member 10 to be etched from above, which is arranged in the chamber 1 and is made of a 3d transition metal, and at the same time forming the plasma 19 of a source gas to form free radicals of a halogen element; producing a precursor 20 containing the 3d transition metal included in the member 10, by etching the member 10 with the free radicals of the halogen element; and forming the film of the precursor 20 on the substrate 3 which has been controlled to a lower temperature than that of the member 10, and reducing the film-formed precursor 20 with the free radicals of the halogen element, to prepare the metallic film of the 3d transition metal or the 3d transition metal containing B or Si, on the substrate 3.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种制备金属膜的方法，该方法在不损坏基材的情况下高速形成膜; 一种装置; 以及制备层状膜的装置。解决方案：制备金属膜的方法包括以下步骤：将基底3放置在可以控制压力的腔室1中; 将含有B或Si的卤素源气体从上方供给到要被蚀刻的构件10上，该构件设置在室1中并由3d过渡金属制成，同时形成源气体的等离子体19 以形成卤素元素的自由基; 通过用卤素元素的自由基蚀刻构件10，制造包含构件10中包含的3d过渡金属的前体20; 在基板3上形成前体20的膜，将其控制在比构件10的温度低的温度下，用卤素元素的自由基还原成膜前体20，制作金属膜在底物3上含有B或Si的3d过渡金属或3d过渡金属。版权所有（C）2006，JPO＆NCIPI

5. 发明专利

JP2005217339A Oxidation silicon depositing method, equipment, sti, manufactured by the method and the equipment, and integrated circuit 审中-公开
标题翻译：氧化硅沉积方法，设备，STI，由方法和设备以及集成电路制造
公开(公告)号：JP2005217339A
公开(公告)日：2005-08-11
申请号：JP2004025125
申请日：2004-02-02
申请人： Mitsubishi Heavy Ind Ltd , Renesas Technology Corp , 三菱重工業株式会社 , 株式会社ルネサステクノロジ
发明人： SAKAMOTO HITOSHI
IPC分类号： H01L21/76 , H01L21/31 , H01L21/316
摘要： PROBLEM TO BE SOLVED: To provide an STI which is great in aspect ratio and formed of a high quality SiO
2 film.
SOLUTION: This method comprises processes of introducing an oxygen gas and a chlorine gas 18 into an evacuated chamber 1; generating gas plasma 14 by supplying electric power to a plasma antenna 27 simultaneously; mainly generating a precursor 15 by etching an etched component 20 made of silicon with a chlorine gas radical after that; adsorbing the precursor 15 to a substrate 3 by the adjustment of a temperature control means 6; and embedding the SiO
2 film in a pattern for separation which is high in aspect ratio in such a way that the precursor 15 adsorbed to the substrate is reduced by the chlorine gas radical, and that the precursor is reacted to form the SiO
2 film by being oxidized with the oxidation gas radical simultaneously after that.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种纵横比大且由高质量SiO 2 SB薄膜形成的STI。解决方案：该方法包括将氧气和氯气18引入真空室1中的方法; 通过同时向等离子体天线27供给电力来产生气体等离子体14; 主要通过在此之后用氯气基蚀刻由硅制成的蚀刻部件20来产生前体15; 通过调节温度控制装置6将前体15吸附到基片3上; 并将SiO 2 SBS 2薄膜以长宽比高的方式嵌入到分离用图案中，使得吸附到基板上的前体15被氯气自由基还原，并且前体反应以在之后同时用氧化气体基团氧化形成SiO 2 膜。版权所有（C）2005，JPO＆NCIPI

6. 发明专利

JP2005026448A Barrier metal film manufacturing apparatus and method therefor 有权
标题翻译： BARRIER金属膜制造设备及其方法
公开(公告)号：JP2005026448A
公开(公告)日：2005-01-27
申请号：JP2003190210
申请日：2003-07-02
申请人： Mitsubishi Heavy Ind Ltd , 三菱重工業株式会社
发明人： SAKAMOTO HITOSHI
IPC分类号： C23C16/08 , C23C16/448 , H01L21/28 , H01L21/285
摘要： PROBLEM TO BE SOLVED: To manufacture a barrier metal film which can satisfy the diffusion-proof property and close contact property.
SOLUTION: Gas plasma 19 of chlorine gas to which only a very small amount of nitrogen is mixed is generated by generating plasma within a chamber 1 accommodating a substrate 3, a precursor of tantalum chloride is generated in the gas phase by etching a material 11 to be etched of tantalum with chlorine radical, and the tantalum element of precursor is formed as a film on the substrate by lowering the temperature in the side of substrate 3 than that in the side of the material 11 to be etched. Accordingly, both diffusion-proof property and close contact property can be satisfied through disturbance of column type interface by coupling the nitrogen element to metal crystal of barrier metal.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：制造能够满足扩散防止性和密合接触性的阻挡金属膜。解决方案：通过在容纳衬底3的腔室1内产生等离子体来产生仅混入非常少量氮气的氯气气体等离子体19，在气相中通过蚀刻产生氯化钽的前体通过降低衬底3侧的温度比被蚀刻材料11的侧面的温度，在衬底上形成作为膜的钽前体的钽元素。因此，通过将氮元素与阻挡金属的金属结晶耦合，可以通过柱型界面的扰动来满足扩散防止性和紧密接触性。版权所有（C）2005，JPO＆NCIPI

7. 发明专利

JP2003247071A SYSTEM AND METHOD FOR MANUFACTURING BARRIER METAL FILM 审中-公开
公开(公告)号：JP2003247071A
公开(公告)日：2003-09-05
申请号：JP2002044289
申请日：2002-02-21
申请人： MITSUBISHI HEAVY IND LTD
发明人： SAKAMOTO HITOSHI , OBA YOSHIYUKI , HACHIMAN NAOKI
IPC分类号： C23C16/34 , H01L21/285
摘要： PROBLEM TO BE SOLVED: To provide a barrier metal film manufacturing system by which a barrier metal film can be deposited at high speed in an extremely small thickness with excellent filling power. SOLUTION: Surface treatment by which, as compared with nitrogen content in the inner part of the base material of the barrier metal film 23, nitrogen content in the surface layer can be relatively decreased is carried out; an oxide layer is formed on the surface to improve wettability; and a hydroxyl group is formed to improve hydrophilicity. By this method, the barrier metal film can be deposited at high speed in an extremely small thickness with excellent filling power, and adhesion between the barrier metal film and a metal to be deposited can be improved. COPYRIGHT: (C)2003,JPO

8. 发明专利

JP2003231971A METALLIC FILM FORMING APPARATUS AND METALLIC FILM FORMING METHOD 审中-公开
公开(公告)号：JP2003231971A
公开(公告)日：2003-08-19
申请号：JP2002030440
申请日：2002-02-07
申请人： MITSUBISHI HEAVY IND LTD
发明人： NISHIMORI TOSHIHIKO , SAKAMOTO HITOSHI , MATSUDA RYUICHI , HACHIMAN NAOKI , OBA YOSHIYUKI , NAKANO SHUNEI , MIZUI JUNICHI
IPC分类号： C23C16/448 , H01L21/285
摘要： PROBLEM TO BE SOLVED: To prevent foreign materials from adhering to a Cu film 16. SOLUTION: This forming method comprises feeding a source gas to a chamber 1 provided with a ring 9 of a copper sheet at a position except right above a substrate 3, forming a precursor consisting of a copper component contained in the ring 9 and the source gas, by generating plasma of the source gas and etching the ring 9 of the copper sheet, making the temperature of the substrate 3 side lower than the temperature of the ring 9 side, and depositing the copper component in the precursor on the substrate 3, in a state of the ring 9 to be absent right above the substrate 3. Then, the claviform crystals of the ring 9 do not fall on the substrate 3, even when they fall like dust, which prevents adherence of the foreign materials onto the Cu film 16, and improves quality of products and the productivity. COPYRIGHT: (C)2003,JPO

9. 发明专利

JP2003213415A DEVICE AND METHOD OF METALLIC FILM FORMING 审中-公开
公开(公告)号：JP2003213415A
公开(公告)日：2003-07-30
申请号：JP2002018000
申请日：2002-01-28
申请人： MITSUBISHI HEAVY IND LTD
发明人： NISHIMORI TOSHIHIKO , SAKAMOTO HITOSHI , MATSUDA RYUICHI , HACHIMAN NAOKI , OBA YOSHIYUKI , NAKANO SHUNEI , MIZUI JUNICHI
IPC分类号： C23C16/08 , H01L21/285
摘要： PROBLEM TO BE SOLVED: To form a film on a plurality of substrates 9 at a high film forming speed by using inexpensive raw materials without leaving impurities in the film. SOLUTION: Gaseous Cl 2 is ejected from a copper pipe member 4 at the axial part of a cylindrical chamber 1 in which a plurality of substrates 9 are housed on the inner circumferential face, a gaseous Cl 2 plasma 16 is generated with the ejected Cl 2 gas by ionizing the periphery of the pipe member 4, a precursor 17 of a copper component included in the pipe member 4 and chlorine in the gaseous Cl 2 is generated by etching the pipe member 4 with the gas plasma 16, and the copper component in the precursor 17 is formed into a film on a plurality of substrates 9 by setting the temperature on the substrate 9 side lower than the temperature on the pipe member 4 side. Thus the film is formed on the plurality of substrates 9 at a high film forming speed by using inexpensive raw material without leaving impurities in the film. COPYRIGHT: (C)2003,JPO

10. 发明专利

JP2003147534A APPARATUS FOR FORMING METALLIC FILM 审中-公开
公开(公告)号：JP2003147534A
公开(公告)日：2003-05-21
申请号：JP2001348315
申请日：2001-11-14
申请人： MITSUBISHI HEAVY IND LTD
发明人： MATSUDA RYUICHI , HACHIMAN NAOKI , SAKAMOTO HITOSHI
IPC分类号： C23C16/507 , C23C16/06 , C23C16/08 , C23C16/14 , C23C16/448 , C23C16/455 , H01J37/32 , H01L21/285
摘要： PROBLEM TO BE SOLVED: To form a thin Cu film 16 of high quality by increasing a deposition speed and drastically reducing the cost. SOLUTION: The thin Cu film 16 of the high quality is formed at the high deposition speed and the a lower cost by feeding gaseous raw material from a nozzle 12 into a chamber 1, making electromagnetic waves incident on the inside of the chamber 1 from a plasma antenna 9, causing an etching reaction in a plurality of projecting parts 20 made of copper arranged between the substrate and a ceiling member by a gaseous Cl2 plasma 14 in a state discontinuous with the flow direction of the electricity of the antenna member to form a precursor (CuxCly) 15, which precursor (CuxCly) 15 carried to the substrate 3 controlled to a temperature lower than the temperature of a member 18 to be etched is made of only the Cu ions by a reduction reaction and is applied to the substrate 3 and the thin Cu film 16 is formed on the substrate of the substrate 3.

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