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121. 发明专利

JP2001177137A MANUFACTURING METHOD OF THIN-FILM PHOTOELECTROMOTIVE FORCE MODULE WITH HIGHLY UNIFORMED INTERCONNECTION AND DOUBLE-LAYER CONTACT 失效
公开(公告)号：JP2001177137A
公开(公告)日：2001-06-29
申请号：JP2000307192
申请日：2000-10-06
申请人： BP SOLAREX
发明人： JANSEN KAI W , MALEY NAGI
IPC分类号： C23C16/30 , C23C16/42 , C23C16/56 , H01L21/205 , H01L21/768 , H01L27/142 , H01L31/02 , H01L31/0224 , H01L31/0376 , H01L31/0392 , H01L31/04 , H01L31/042 , H01L31/046 , H01L31/0463 , H01L31/05 , H01L31/075 , H01L31/18 , H01L31/20
摘要： PROBLEM TO BE SOLVED: To provide a high-performance photoelectromotive force module with an interconnection improved by a specific manufacturing method. SOLUTION: This photoelectromotive force module is provided with a double- layer back contact 34 and at least one layer of front contact 20. The double- layer back contact consists of a zinc oxide inner layer 24 and an aluminum outer layer 38, and the front contact consists of a tin oxide inner layer 36 and a silicon dioxide dielectric outer layer 22. Between the front contact and the back contact, at least one amorphous silicon-contained thin-film semiconductor 26 is deposited/ The transparent conductive oxide layer in the front contact is scribed with a laser beam and then the amorphous silicon-contained semiconductor and the inner layer of the double-layer back contact are simultaneously scribed with a laser beam to form a recess. The recess is filled with the same material as that of the outer layer of the double-layer back contact to form an excellent mechanical and electrical interconnection between the front contact and the outer layer of the double-layer back contact.

122. 发明专利

JP2000502492A 失效
公开(公告)号：JP2000502492A
公开(公告)日：2000-02-29
申请号：JP52301197
申请日：1996-12-20
IPC分类号： H01J9/02 , H01J1/304 , H01J19/24 , H01J21/10 , H01J29/04 , H01J31/12 , H01L21/02 , H01L21/822 , H01L27/04 , H01L31/0376 , H01J1/30

123. 发明专利

JP2000058887A FABRICATION OF THIN FILM PHOTOVOLTAIC MODULE HAVING HIGH UNIFORMITY INTERCONNECT AND DOUBLE LAYER CONTACT 失效
公开(公告)号：JP2000058887A
公开(公告)日：2000-02-25
申请号：JP19813299
申请日：1999-07-12
申请人： BP SOLAREX
发明人： JANSEN KAI W , MALEY NAGI
IPC分类号： C23C16/30 , C23C16/42 , C23C16/56 , H01L21/205 , H01L21/768 , H01L27/142 , H01L31/02 , H01L31/0224 , H01L31/0376 , H01L31/0392 , H01L31/04 , H01L31/042 , H01L31/046 , H01L31/0463 , H01L31/05 , H01L31/075 , H01L31/18 , H01L31/20
摘要： PROBLEM TO BE SOLVED: To fabricate a high performance photovoltaic module having an interconnect improved by a special fabrication method. SOLUTION: One or more thin film semiconductor 26 containing amorphous silicon is deposited between front and back contacts 20, 34. The contacts are arranged between a substrate and an arbitrarily selective super straight 44. During fabrication, the transparent conductive oxide layer of the front contact is scribed by laser and the inner layer of a double layer back contact is scribed simultaneously by laser to make a trench. Subsequently, the trench is filled with the same metal as the outer layer of the double layer back contact and excellent mechanical and electrical interconnection is provided between the front contact and the outer layer of the double layer back contact which is eventually scribed by laser. The photovoltaic module is sealed in a container for the purpose of environmental protection.

124. 发明专利

JP2846651B2 失效
公开(公告)号：JP2846651B2
公开(公告)日：1999-01-13
申请号：JP8310489
申请日：1989-03-31
申请人： SANYO DENKI KK
发明人： OKAMOTO SHINGO , TAKAHAMA TAKESHI , NISHIKUNI MASATO , NAKANO SHOICHI
IPC分类号： H01L31/04 , H01L31/0376 , H01L31/0747 , H01L31/075 , H01L31/20

125. 发明专利

JPH1070302A SEMICONDUCTOR PHOTODETECTOR AND ITS MANUFACTURE 失效
公开(公告)号：JPH1070302A
公开(公告)日：1998-03-10
申请号：JP22425096
申请日：1996-08-26
申请人： FUJI XEROX CO LTD
发明人： YAMADA TAKAYUKI , KYOZUKA SHINYA , MIYAMOTO YASUMASA , NAKAMURA TAKESHI
IPC分类号： H01L31/0352 , H01L31/0376 , H01L31/107 , H01L31/20
摘要： PROBLEM TO BE SOLVED: To obtain a semiconductor photodetector structure which prevents mutual diffusion at an interface portion in crystallization of a barrier layer and a well layer constructing an amplification layer without depending on annealing, and maintains a steep energy band change at this portion. SOLUTION: The photoreceptor comprises an insulating substrate 10, and a lower electrode 11, an amplification layer 13 which amplifies photocarrier occurring in a light absorption layer 16, the light absorption layer 16 which causes the photocarrier by photodetection, and a transparent electrode 18, sequentially deposited on the insulating substrate 10. In this case, the amplification layer 13 has a barrier layer 15 with a band gap greater than that of the light absorption layer 16 and a well layer 14 with a band gap less than that of the barrier layer 15. The barrier layer 15 and the well layer 14 respectively comprise a crystallized amorphous material. On the other hand, a diffusion preventing layer 20 of an insulating film with a band gap greater than that of the barrier layer 15 and a film thickness to allow tunneling of the photocarrier is provided between the barrier layer 15 and the well layer 14.

126. 发明专利

JPH07254720A PHOTOELECTRIC DEVICE 失效
公开(公告)号：JPH07254720A
公开(公告)日：1995-10-03
申请号：JP30146194
申请日：1994-11-09
申请人： RCA CORP
发明人： ANSONI UIRIAMU KATARANO
IPC分类号： H01L31/04 , H01L31/0376 , H01L31/075 , H01L31/078
摘要： PURPOSE: To increase the open-circuit voltage of a photoelectric device by adding hydrogen at a rate higher than an intrinsic conductive type second region in an intrinsic conductive type first region and making the thickness of the first region smaller than that of the second region. CONSTITUTION: A second layer 23 of semiconductor materials formed between a first layer 22, through which incident light on a photoelectric device 10 is transmitted and which has a wide band-gap energy of a first conductivity type semiconductor material, and the third layer 30 of the semiconductor material having a conductivity type opposite to that of the first layer 22 has an intrinsic conductivity type first region 24 nearest the first layer 22 and an intrinsic conductive type second region 28 separated from the first layer 22. The band-gap energy of the first region 24 is made larger than that of the second region 28, but it is not made larger than the band gap energy of the first layer 22. The first and second regions consist of hydrogenated amorphous silicon, the first region 24 contains hydrogen at a rate higher than the second region 28, and the thickness of the first region 24 is approximately half that of the second region 28.

127. 发明专利

JPH06101573B2 失效
公开(公告)号：JPH06101573B2
公开(公告)日：1994-12-12
申请号：JP7425784
申请日：1984-04-13
IPC分类号： H01L31/09 , H01L31/0376 , H01L31/04 , H01L31/06 , H01L31/075 , H01L31/08 , H01L31/20
摘要： A semiconductor photoelectric conversion device is provided with a PIN structure which comprises P-type, I-type and N-type non-single-crystal semiconductor layers laminated in that order or in the reverse order. The I-type layer contains a recombination center neutralizer by hydrogen or fluorine and is doped with an alkali metal element by lithium, sodium or potassium, in a concentration higher than that of oxygen and/or nitrogen that the I-type layer contains. Further, the I-type layer is doped with a P-type impurity such as boron so as to compensate for the N-type conductivity of the alkali metal element. The PIN structure is formed by a CVD method. The I-type layer is doped with the alkali metal element by using as alkali metal element material gas during the formation of the I-type layer, or by dipping the PIN structure into an aqueous solution of the alkali metal element or implanting alkali metal element ions into the PIN structure after forming the structure.

128. 发明专利

JPH0463550B2 失效
公开(公告)号：JPH0463550B2
公开(公告)日：1992-10-12
申请号：JP3675183
申请日：1983-03-08
申请人： KOGYO GIJUTSUIN
发明人： ICHANAGI HAJIME , IGARASHI TADASHI , ISHII MASAYUKI , KOBAYASHI CHUICHI
IPC分类号： H01L31/04 , H01L31/0376 , H01L31/06 , H01L31/075 , H01L31/18

129. 发明专利

JPH03224214A AMORPHOUS SILICON FILM AND MANUFACTURE THEREOF AND PHOTOSEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH03224214A
公开(公告)日：1991-10-03
申请号：JP7794290
申请日：1990-03-27
申请人： SANYO ELECTRIC CO
发明人： IWAMOTO MASAYUKI , MINAMI KOJI , YAMAOKI TOSHIHIKO
IPC分类号： H01L21/205 , H01L31/0376 , H01L31/04 , H01L31/062 , H01L31/075 , H01L31/20
摘要： PURPOSE:To form an amorphous silicon film in wide band gap and high photoconductivity by a method wherein the ratio of an Si atom coupled with two each of H atoms to another Si atom containing specific amount of H atom and coupled with one each of H atom is specified. CONSTITUTION:An amorphous silicon film to be formed on a semiconductor device contains H atoms exceeding 30 atom % while the ratio of an Si atom coupled with two each of H atoms to another Si atom coupled with one each of H atom is specified to be 0.4% so that a wide band gap and a high photoconductivity may be attained. Such an amorphous silicon film is formed by plasma CVD process meeting the requirements for the substrate temperature not exceeding 100 deg.C and the ratio of H2 gas flow rate to the SiH4 gas flow rate exceeding 1. Furthermore, the amorphous silicon film can be respectively formed by CVD process meeting the requirements of the substrate temperature not exceeding 100 deg.C and the RF power exceeding 17mW/cm or the substrate temperature not exceeding 100 deg.C and the reaction pressure not exceeding 0.1Torr.

130. 发明专利

JPH0334456A PIN DIODE, MANUFACTURE THEREOF AND CONTACT IMAGE SENSOR 失效
公开(公告)号：JPH0334456A
公开(公告)日：1991-02-14
申请号：JP16904989
申请日：1989-06-30
申请人： NIPPON STEEL CORP
发明人： KITAMURA KOICHI , MIMURA SHUSUKE , YAMAMOTO KAZUO , OTA YASUMITSU , SAI KAZUYOSHI , KAWAMURA KAZUHIKO , OTANI NOBORU
IPC分类号： H01L31/107 , H01L27/146 , H01L31/0376 , H01L31/105 , H01L31/20
摘要： PURPOSE:To improve photoelectric conversion efficiency without deteriorating diode characteristics by a method wherein a p-layer or an n-layer of a light incident layer of a pin diode contains microcrystal silicon of 10% or less. CONSTITUTION:An amorphous silicon growth device for producing a pin diode decomposes monosilane (SiH4) gas by glow discharge and deposits thin films of amorphous silicon, An anode 2 and a cathode 3 are provided inside a reaction vessel 1 wherein monosilane (SiH4) gas is supplied via a flow rate controller 6 and vacuum is attained inside the reaction vessel 1 by a rotary pump 9 or the like. Then a light incident layer with respect to the pin diode is made an n-layer wherein the p-layer is 300 angstrom thick, i-layer 6000 angstrom, n-layer 300 angstrom and ITO 650 angstrom. The n-layer contains a microcrystal layer of approximately 10% of the amorphous layer while ITO is transparent metal and Cr is a thin chrome film formed on a substrate B.

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