专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JPH06167829A ONE-COMPONENT TONER 失效
公开(公告)号：JPH06167829A
公开(公告)日：1994-06-14
申请号：JP34563292
申请日：1992-11-30
申请人： SANYO ELECTRIC CO
发明人： YAMAOKI TOSHIHIKO , TSUJIMOTO HIRONOBU , HIROSE KOICHI , MINAMI KOJI
IPC分类号： G03G9/083 , G03G9/087 , G03G13/09
摘要： PURPOSE:To provide a one-component toner ensuring high transfer efficiency and high resolution. CONSTITUTION:This one-component toner contains magnetic powder, a colorant and an elastic material as a binder and has electric conductivity in a pressurized state and insulating property in an unpressurized state. When a magnetic brush formed on a developing sleeve 1 with this one-component toner is interposed between the sleeve 1 and a photosensitive drum 2, this one-component toner is pressurized and made electric conductive to form an electric conductive path of the magnetic brush and this toner injects electric charges into the drum 2 and moves to the exposed part of the drum 2 by attraction to perform development. This one-component toner acts as an insulating toner at the time of transfer because of no applied pressure and it is transferred to the paper with high transfer efficiency.

2. 发明专利

JPH0456303B2 失效
公开(公告)号：JPH0456303B2
公开(公告)日：1992-09-08
申请号：JP11209483
申请日：1983-06-21
申请人： SANYO ELECTRIC CO
发明人： MINAMI KOJI , GOTO KAZUYUKI , HAKU HISAO , FUKATSU TAKEO , OONISHI MICHITOSHI , KUWANO YUKINORI
IPC分类号： G03G5/08 , G03G5/04 , G03G5/082

3. 发明专利

JPH0427293B2 失效
公开(公告)号：JPH0427293B2
公开(公告)日：1992-05-11
申请号：JP6610182
申请日：1982-04-19
申请人： SANYO ELECTRIC CO
发明人： MINAMI KOJI , GOTO KAZUYUKI
IPC分类号： C23C16/24 , C23C16/50 , C23C16/54 , G03G5/08 , H01L21/205

4. 发明专利

JPH03224214A AMORPHOUS SILICON FILM AND MANUFACTURE THEREOF AND PHOTOSEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH03224214A
公开(公告)日：1991-10-03
申请号：JP7794290
申请日：1990-03-27
申请人： SANYO ELECTRIC CO
发明人： IWAMOTO MASAYUKI , MINAMI KOJI , YAMAOKI TOSHIHIKO
IPC分类号： H01L21/205 , H01L31/0376 , H01L31/04 , H01L31/062 , H01L31/075 , H01L31/20
摘要： PURPOSE:To form an amorphous silicon film in wide band gap and high photoconductivity by a method wherein the ratio of an Si atom coupled with two each of H atoms to another Si atom containing specific amount of H atom and coupled with one each of H atom is specified. CONSTITUTION:An amorphous silicon film to be formed on a semiconductor device contains H atoms exceeding 30 atom % while the ratio of an Si atom coupled with two each of H atoms to another Si atom coupled with one each of H atom is specified to be 0.4% so that a wide band gap and a high photoconductivity may be attained. Such an amorphous silicon film is formed by plasma CVD process meeting the requirements for the substrate temperature not exceeding 100 deg.C and the ratio of H2 gas flow rate to the SiH4 gas flow rate exceeding 1. Furthermore, the amorphous silicon film can be respectively formed by CVD process meeting the requirements of the substrate temperature not exceeding 100 deg.C and the RF power exceeding 17mW/cm or the substrate temperature not exceeding 100 deg.C and the reaction pressure not exceeding 0.1Torr.

5. 发明专利

JPH03223871A ELECTROSTATIC LATENT IMAGE CARRYING MEMBER 失效
公开(公告)号：JPH03223871A
公开(公告)日：1991-10-02
申请号：JP2075890
申请日：1990-01-30
申请人： SANYO ELECTRIC CO
发明人： NAGASHIMA TOMOMICHI , MINAMI KOJI , YAMAOKI TOSHIHIKO , HIRATANI TOSHIHIKO
IPC分类号： G03G5/08
摘要： PURPOSE:To obtain sharp images by providing an amorphous semiconductor layer of a p or n type between a transparent and a photoconductive layer and erasing a residual potential by the photovoltaic force generated at the junction of the photoconductive layer and the amorphous semiconductor layer of the p or n type. CONSTITUTION:Light transmits a transparent base 11 and the transparent electrode 12 and arrives at the photoconductive layer 14 constituting the photosensitive part when a light image is projected from the transparent base 11 side. Electrons and holes are formed in the photoconductive layer 14 by this light energy, by which the electrons and holes and electrified electric charges are negated and the electrostatic latent image is formed. Since this electrostatic latent image carrying member is small in bias potential and has the residual potential smaller than the residual potential of an ordinary photographic process, the photovoltaic force by the projected light is generated by the semiconductor junction of the photoconductive layer 14 and the amorphous semiconductor layer 13 of the p or n type. The residual potential is thus negated. The good image is obtd. in this way.

6. 发明专利

JPH03199566A INSTALLATION OF ROOF INSTALLATION TYPE SOLAR BATTERY DEVICE 失效
公开(公告)号：JPH03199566A
公开(公告)日：1991-08-30
申请号：JP34415089
申请日：1989-12-27
申请人： SANYO ELECTRIC CO
发明人： IWAMOTO MASAYUKI , MINAMI KOJI , YAMAOKI TOSHIHIKO , MORISANE MASASHI
IPC分类号： E04D13/18 , H01L31/042
摘要： PURPOSE:To obviate the need of a rack for installing a solar battery module by arranging a plurality of solar battery modules on a roof and forming a solar battery device by connecting the contiguous solar battery modules by a connecting device. CONSTITUTION:A solar battery is constituted by arranging a plurality of solar battery modules 10 on a roof 11 and connecting the contiguous solar battery modules each other by the first and second connecting devices 12 and 13. Both the sides and the front and rear parts of the solar battery device are installed on a main house and rafters through a plurality of wires 14 by the second connecting device 13, and the solar battery device is installed on the roof 11. Accordingly, the need of racks for installing a plurality of solar battery modules 10 is obviated only by installing the solar battery device on the roof 11 by a wire 14, etc.

7. 发明专利

JPH03125481A PHOTOVOLTAIC DEVICE 失效
公开(公告)号：JPH03125481A
公开(公告)日：1991-05-28
申请号：JP26328289
申请日：1989-10-09
申请人： SANYO ELECTRIC CO
发明人： MINAMI KOJI , YAMACHI TOSHIHIKO , IWAMOTO MASAYUKI
IPC分类号： H01L31/04
摘要： PURPOSE:To utilize all incident light on a transparent substrate irrespective of wavelength by providing a photovoltaic structure in which the substrate is coated sequentially with a first layer having a relatively large average grain size and a second layer having a relatively small average grain size. CONSTITUTION:A transparent electrode 2 is composed of a first layer 21 of a large average grain size, and a second layer 22 of a small average grain size. Long-wavelength components and short-wavelength components of light are refracted and scattered by the first and second layers 21 and 22, respectively, and they travel long way in a photoelectric section 3. Therefore, most part of the light is absorbed in the photoelectric section, and therefore an improved efficiency of conversion is obtained. The transparent electrode 2, composed of SnO2, is formed in this way. A transparent substrate 1 is cleaned sufficiently and placed in a CVD device heated at a predetermined temperature. SnCl4.5H2O and HF are sprayed on the substrate 1 so that the transparent electrode is formed. The conditions may be the substrate temperature of 550 deg.C, the film thickness of 1.0mum, and grain size of 0.9mum for the first layer 21; the substrate temperature of 500 deg.C, the film thickness of 0.2mum, and grain size of 0.1mum for the second layer 22.

8. 发明专利

JPH0370185A AMORPHOUS SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH0370185A
公开(公告)日：1991-03-26
申请号：JP20644189
申请日：1989-08-09
申请人： SANYO ELECTRIC CO
发明人： IWAMOTO MASAYUKI , MINAMI KOJI , WATANABE KANEO
IPC分类号： H01L21/205 , H01L31/04
摘要： PURPOSE:To prevent a p-type impurities material from being diffused into other semiconductor layers of p-type impurities material and reducing narrowing of a band cap by setting the concentration within a film of p-type impurities material to a specified range. CONSTITUTION:The title item is an amorphous semiconductor device used for a p-type amorphous silicon nitride layer 3 of a photovoltaic device and aluminum Al, gallium Ga, r indium In are used as the p-type impurities materials individually or in combination. Then, the concentration within film of p-type impurities is set to a range from 3X10 to 3X10 cm . Namely, a valid valence electron band control is performed at concentration within film of p-type impurities material and diffusion of p-type impurities material and narrowing of band cap can be prevented.

9. 发明专利

JPH02303119A METHOD OF FORMING SEMICONDUCTOR FILM 失效
公开(公告)号：JPH02303119A
公开(公告)日：1990-12-17
申请号：JP12490289
申请日：1989-05-18
申请人： SANYO ELECTRIC CO
发明人： IWAMOTO MASAYUKI , MINAMI KOJI , WATANABE KANEO
IPC分类号： H01L21/302 , H01L21/205 , H01L21/3065 , H01L31/04
摘要： PURPOSE:To simply and inexpensively form a thin semiconductor film of a large area by exposing a substrate formed with a metal layer of melted state with a plasma atmosphere of material gas containing a semiconductor material, and growing a semiconductor film on the substrate simultaneously upon removing the melted metal film by etching. CONSTITUTION:A substrate 1 deposited with Sn 2 is heated to 250 deg.C in a plasma reactor to the melted state of Sn 2, then evacuated in vacuum, SiH 4 is then introduced, a plasma is generated, and a film and an etching radical are generated. The film radical forms a plurality of insular Si fine crystals 3 on the melted Sn 2, the etching radical removes the amorphous component on the Si fine crystal 3 and a small amount of melted Sn 2 to reduce the melted Sn 2 in thickness. The grain size of the Si crystal 4 is gradually increased, the thickness of the Sn 2 is gradually decreased, the melted layer of the Sn 2 is entirely eliminated, the Si crystal layer 4 is stopped in the grain size simultaneously upon eliminating of the Sn 2 to be brought into contact with adjacent crystal. Thus, an Si polycrystal 5 of large grain size is formed.

10. 发明专利

JPH02277763A FORMATION OF THIN FILM OF SEMICONDUCTOR 失效
公开(公告)号：JPH02277763A
公开(公告)日：1990-11-14
申请号：JP10077789
申请日：1989-04-20
申请人： SANYO ELECTRIC CO
发明人： IWAMOTO MASAYUKI , MINAMI KOJI , YAMAOKI TOSHIHIKO
IPC分类号： B01J19/08 , C23C4/12 , H01L21/208
摘要： PURPOSE:To form a thin film of a semiconductor having satisfactory electrical characteristics as deposited by spraying a plasma jet obtd. by melting powdery starting material for the thin film on a substrate. CONSTITUTION:Ions or atomic gas of an element for reducing defect density is fed into an evacuated vessel 1 and a substrate 8 is set in the vessel 1. A plasma jet 7 obtd. by melting powdery starting material for a thin film 9 of a semiconductor to be formed is sprayed on the substrate 8. Fluorine is used as the element for reducing defect density. The characteristics of the resulting thin film 9 is improved.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式