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    • 4. 发明专利
    • Tunneling emitter and forming method
    • 隧道发射和形成方法
    • JP2005135930A
    • 2005-05-26
    • JP2005038982
    • 2005-02-16
    • Hewlett Packard Co ヒューレット・パッカード・カンパニーHewlett−Packard Company
    • RAMAMOORTHI SRIRAMCHEN ZHIZANG
    • H01J1/30G11C11/23H01J1/312H01J9/02H01J19/24H01J19/38H01J21/10H01J29/04H01J31/12
    • B82Y10/00G11C11/23H01J1/312H01J9/025
    • PROBLEM TO BE SOLVED: To provide a flat emitter having a high energy current density and operating with high reliability in an environment of a low degree of vacuum. SOLUTION: An emitter has an electron supply layer and a tunneling layer formed on the electron supply layer. Optionally, an insulator layer is formed on the electron supply layer and has openings defined within a region in which the tunneling layer is formed. A cathode layer is formed on the tunneling layer. A conductive layer is partially disposed on the cathode layer and partially on the insulator layer if present. The conductive layer defines an opening to provide a surface for energy emissions of electrons and/or photons. Preferably but optionally, the emitter is subjected to an annealing process thereby increasing the supply of electrons tunneled from the electron supply layer to the cathode layer. COPYRIGHT: (C)2005,JPO&NCIPI
    • 要解决的问题:提供具有高能量电流密度并且在低真空度的环境中以高可靠性运行的平坦发射体。 解决方案:发射极具有形成在电子供应层上的电子供应层和隧道层。 可选地,在电子供应层上形成绝缘体层,并且在形成隧道层的区域内形成开口。 在隧道层上形成阴极层。 导电层部分地设置在阴极层上,部分地设置在绝缘体层上,如果存在的话。 导电层限定一个开口以提供用于电子和/或光子的能量发射的表面。 优选但是可选地,对发射极进行退火处理,从而增加从电子供给层向阴极层隧穿的电子的供应。 版权所有(C)2005,JPO&NCIPI