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1. 发明专利

JPH03200377A ON-ROOF SOLAR CELL AND MOUNTING THEREOF 失效
公开(公告)号：JPH03200377A
公开(公告)日：1991-09-02
申请号：JP34414989
申请日：1989-12-27
申请人： SANYO ELECTRIC CO
发明人： IWAMOTO MASAYUKI , MINAMI KOJI , YAMAOKI TOSHIHIKO , ISHIKAWA AKIRA , HONDA HIROYUKI
IPC分类号： E04D13/18 , H01L31/042
摘要： PURPOSE:To easily mount on an already installed roof by engaging the wire latches of a solar cell module with corresponding module mounting wires, and mounting the module in a frame. CONSTITUTION:A plurality of pairs of module mounting wires 12 are extended longitudinally at an interval in a frame 11. Wire latches 15 are mounted at both right and left ends of front and rear edges of a solar cell module 10. The latch 15 has an upper module engaging part 15a in which the edge of the module 10 is inserted in an S-shaped vertical section, and a lower wir latch part 15b to be engaged with the wire 12. The part 15b of the module 10 is engaged with the corresponding wire 12 to mount the module 10 in the frame 11. Thus, it can easily be mounted on an already installed roof.

2. 发明专利

JPH03199564A INSTALLATION OF ROOF INSTALLATION TYPE SOLAR BATTERY 失效
公开(公告)号：JPH03199564A
公开(公告)日：1991-08-30
申请号：JP34414789
申请日：1989-12-27
申请人： SANYO ELECTRIC CO
发明人： IWAMOTO MASAYUKI , MINAMI KOJI , YAMAOKI TOSHIHIKO
IPC分类号： E04D13/18 , H01L31/042
摘要： PURPOSE:To install a solar battery on a roof in stable manner by forming the undersurface of a spacer for placing a solar battery to the shape conforming to the shape of the upper surface of a roofing tile and installing a plurality of spacers having the flat upper surface on a roof. CONSTITUTION:Two rows of laterally long spacers 13 are arranged laterally on a roofing tile 12 for a roof 11. A through hole 14 is formed in the lengthwise direction on the spacer 13, and the under-surface is formed into the shape conforming to the shape of the upper surface of the roofing tile 12, and further, the upper surface is formed to a flat surface which is nearly parallel to the roof 11. Then, a solar battery 10 is installed on the spacer 13, and installed and fixed on the main house, common rafter, etc., of the roof 11 by wires, etc. Accordingly, also the solar battery 10 can be installed on the roof 11 in stable manner by firmly fixing the spacer 13 on the roof 11 in simple manner.

3. 发明专利

JPH0375664A ELECTROPHOTOGRAPHIC SENSITIVE BODY 失效
公开(公告)号：JPH0375664A
公开(公告)日：1991-03-29
申请号：JP21192989
申请日：1989-08-17
申请人： SANYO ELECTRIC CO
发明人： YAMAOKI TOSHIHIKO , NAGASHIMA TOMOMICHI , MINAMI KOJI , TAKEUCHI MASARU
IPC分类号： G03G5/08
摘要： PURPOSE:To ensure high sensitivity and to reduce manufacturing cost by forming a photoconductive layer composed essentially of a polysilane having the side chain groups for generating carriers on a conductive substrate. CONSTITUTION:The photosensitives body comprises the conductive substrate 1 and the photoconductive layer 2 formed on the substrate 1 and made of the polysilane having the side chain groups for generating carriers. This polysilane is prepared by dehalogenating and polymerizing a polymer of a dihalogenated monomer having a main chain of silicon, thus permitting the obtained photosensitive body to attain sensitivity as high as an inorganic photosensitive body, and accordingly, to be reduced in the manufacturing cost.

4. 发明专利

JPH0370183A PHOTOVOLTAIC ELEMENT 失效
公开(公告)号：JPH0370183A
公开(公告)日：1991-03-26
申请号：JP20614389
申请日：1989-08-09
申请人： SANYO ELECTRIC CO
发明人： IWAMOTO MASAYUKI , MINAMI KOJI , YAMAOKI TOSHIHIKO
IPC分类号： H01L31/04 , H01L31/036 , H01L31/0368 , H01L31/072 , H01L31/0745 , H01L31/0747 , H01L31/20
摘要： PURPOSE:To improve conversion efficiency of a solar cell by providing a fine crystal layer consisting of substantially intrinsic fine crystal silicon semiconductor which is provided between an amorphous layer and a crystal layer. CONSTITUTION:A fine crystal layer 2 and n-type or p-type amorphous layer 3 are formed by the plasma CVD method with a p-type or n-type crystal layer 1 as a substrate and S1H4 gas as a main raw material gas by the plasma CVD method. Concretely speaking, a film with the grain diameter of 100 to 1000Angstrom can be obtained with a gas composition ratio of SiH4/H2=0.05 and at a substrate temperature of 180 to 400 deg.C for the fine crystal layer 2. An amorphous layer 3 is formed under a gas composition ratio of B2H6/SiH4=0.01-0.05 for p-type and under a gas composition ratio of PH3/SiH4=0.001-0.05 and at a substrate temperature of 200 deg.C for n-type. Namely, a fine crystal layer which is provided between the amorphous layer and the crystal layer functions as a buffer layer for relaxing mismatching of lattice, etc., between the amorphous layer and the crystal layer by enabling an optically forbidden bandwidth to have an intermediate value between both layers and by setting it to be substantially intrinsic for showing a film quality at low interface level.

5. 发明专利

JPH0350821A MANUFACTURE OF SI CRYSTALLINE FILM 失效
公开(公告)号：JPH0350821A
公开(公告)日：1991-03-05
申请号：JP18679489
申请日：1989-07-19
申请人： SANYO ELECTRIC CO
发明人： IWAMOTO MASAYUKI , MINAMI KOJI , YAMAOKI TOSHIHIKO
IPC分类号： H01L21/20 , H01L21/205 , H01L21/263 , H01L21/336 , H01L29/78 , H01L29/786
摘要： PURPOSE:To elevate the reproducibility of Si crystalline film growth so as to obtain stable properties by annealing an amorphous Si film to which Si crystalline fine particles are mixed, and changing the amorphous Si film into an Si crystalline film with the Si crystalline fine particles as nuclei. CONSTITUTION:Silane gas is irradiated with high energy laser beams, and the gas is decomposed so as to obtain Si crystalline fine particles. And the silane gas including the fine particles is introduced into a reactor so as to grow an amorphous Si film, wherein Si crystalline fine particles are mixed, at the surface of a substrate arranged in the reactor. The amorphous Si film is annealed so as to obtain an Si crystalline film 5 where the amorphous Si film 3 is crystallized with the Si crystalline fine particles as nuclei and which consists of Si polycrystalline aggregates.

6. 发明专利

JPH02165158A ELECTROPHOTOGRAPHIC SENSITIVE BODY 失效
公开(公告)号：JPH02165158A
公开(公告)日：1990-06-26
申请号：JP32106188
申请日：1988-12-20
申请人： SANYO ELECTRIC CO
发明人： TAKEUCHI MASARU , NAGASHIMA TOMOMICHI , YAMAOKI TOSHIHIKO , MINAMI KOJI
IPC分类号： G03G5/07 , C08G79/00
摘要： PURPOSE:To obtain good characteristics of the electrophotographic sensitive body without using an organic binder by using an electric charge transfer layer composed essentially of a polygermane. CONSTITUTION:The electrophotographic sensitive body is formed by laminating on a conductive substrate 1 a charge generating layer 2 and an charge transfer layer 3 composed essentially of the polygermane, such as obtained by polycondensing, e.g. triethylchlorogermane with metallic lithium in a solution of hexamethylphosphoric triamide and ether, thus permitting good characteristics of the electrophotographic sensitive body to be obtained without using the organic binder by forming the charge transfer layer 3 greatly affecting the characteristics of the electrophotographic sensitive body essentially with the polygermane.

7. 发明专利

JPH02135363A ELECTROSTATIC LATENT IMAGE HOLDING BODY 失效
公开(公告)号：JPH02135363A
公开(公告)日：1990-05-24
申请号：JP29040188
申请日：1988-11-16
申请人： SANYO ELECTRIC CO
发明人： NAGASHIMA TOMOMICHI , MINAMI KOJI , TAKEUCHI MASARU , YAMAOKI TOSHIHIKO
IPC分类号： G03G5/05 , G03G5/08 , G03G5/087
摘要： PURPOSE:To obtain a high degree of electric charge transfer and high electric charge generating ability by forming an electric charge generating layer with polysilane contg. fine amorphous silicon powder. CONSTITUTION:A photoconductive layer 2 is formed on a support 1 having an electrically conductive surface. The layer 2 is a laminate consisting of an electric charge generating layer 3 and an electric charge transferring layer 4 and the layer 3 is made of polysilane 6 contg. fine amorphous silicon (a-Si) powder 5. Since the a-Si powder 5 is dispersed in the polysilane 6 forming the layer 3, an electrostatic latent image holding body having superior photosensitivity, the high degree of electric charge transfer of the polysilane 6 and the high electric charge generating ability of the a-Si powder 5 is obtd. This holding body can be produced at a low cost because the layer 3 is formed by coating.

8. 发明专利

JPH02113259A ELECTROSTATIC LATENT IMAGE CARRIER 失效
公开(公告)号：JPH02113259A
公开(公告)日：1990-04-25
申请号：JP26771288
申请日：1988-10-24
申请人： SANYO ELECTRIC CO
发明人： YAMAOKI TOSHIHIKO , MINAMI KOJI , WAKIZAKA KENICHIRO , IWAMOTO MASAYUKI
IPC分类号： G03G5/08 , G03G5/082
摘要： PURPOSE:To obtain the photosensitive body which makes bipolar operation by respectively specifying the energy difference of the conduction band of a blocking layer essentially consisting of amorphous silicon and photoconductive layer formed on a base having a conductive surface and the energy difference of the valence band thereof. CONSTITUTION:The blocking layer essentially consisting of the amorphous silicon and the photoconductive layer are successively laminated and formed on the base having the conductive surface. The energy difference DELTAEc of the transmission band of the blocking layer and the photoconductive layer and the energy difference DELTAEv of the valence band are so determined as to attain 0.025eV

9. 发明专利

JPH06167829A ONE-COMPONENT TONER 失效
公开(公告)号：JPH06167829A
公开(公告)日：1994-06-14
申请号：JP34563292
申请日：1992-11-30
申请人： SANYO ELECTRIC CO
发明人： YAMAOKI TOSHIHIKO , TSUJIMOTO HIRONOBU , HIROSE KOICHI , MINAMI KOJI
IPC分类号： G03G9/083 , G03G9/087 , G03G13/09
摘要： PURPOSE:To provide a one-component toner ensuring high transfer efficiency and high resolution. CONSTITUTION:This one-component toner contains magnetic powder, a colorant and an elastic material as a binder and has electric conductivity in a pressurized state and insulating property in an unpressurized state. When a magnetic brush formed on a developing sleeve 1 with this one-component toner is interposed between the sleeve 1 and a photosensitive drum 2, this one-component toner is pressurized and made electric conductive to form an electric conductive path of the magnetic brush and this toner injects electric charges into the drum 2 and moves to the exposed part of the drum 2 by attraction to perform development. This one-component toner acts as an insulating toner at the time of transfer because of no applied pressure and it is transferred to the paper with high transfer efficiency.

10. 发明专利

JPH03224214A AMORPHOUS SILICON FILM AND MANUFACTURE THEREOF AND PHOTOSEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH03224214A
公开(公告)日：1991-10-03
申请号：JP7794290
申请日：1990-03-27
申请人： SANYO ELECTRIC CO
发明人： IWAMOTO MASAYUKI , MINAMI KOJI , YAMAOKI TOSHIHIKO
IPC分类号： H01L21/205 , H01L31/0376 , H01L31/04 , H01L31/062 , H01L31/075 , H01L31/20
摘要： PURPOSE:To form an amorphous silicon film in wide band gap and high photoconductivity by a method wherein the ratio of an Si atom coupled with two each of H atoms to another Si atom containing specific amount of H atom and coupled with one each of H atom is specified. CONSTITUTION:An amorphous silicon film to be formed on a semiconductor device contains H atoms exceeding 30 atom % while the ratio of an Si atom coupled with two each of H atoms to another Si atom coupled with one each of H atom is specified to be 0.4% so that a wide band gap and a high photoconductivity may be attained. Such an amorphous silicon film is formed by plasma CVD process meeting the requirements for the substrate temperature not exceeding 100 deg.C and the ratio of H2 gas flow rate to the SiH4 gas flow rate exceeding 1. Furthermore, the amorphous silicon film can be respectively formed by CVD process meeting the requirements of the substrate temperature not exceeding 100 deg.C and the RF power exceeding 17mW/cm or the substrate temperature not exceeding 100 deg.C and the reaction pressure not exceeding 0.1Torr.

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