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111. 发明专利

JP2005033030A Semiconductor device and manufacturing method thereof 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2005033030A
公开(公告)日：2005-02-03
申请号：JP2003271353
申请日：2003-07-07
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： KUSUMOTO OSAMU , KITAHATA MAKOTO , UCHIDA MASAO , TAKAHASHI KUNIMASA , YAMASHITA MASAYA , MIYANAGA RYOKO
IPC分类号： H01L21/28 , H01L29/12 , H01L29/417 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device for preventing the occurrence of a broken electrode, local increase in the electric resistance, and electromigration or the like, and to provide a manufacturing method thereof. SOLUTION: The manufacturing method sequentially forms a high resistance SiC layer 2 and a p-well region 3, carries out epitaxial growing of a channel layer 5 and thereafter, forms a p+ contact region 4 to part of the channel layer 5 and the p-well region 3, forms a source region 6 surrounding sides of the p+ contact region 4 by using an implantation mask open to the upper part of the p+ contact region 4, and thereafter forms a source electrode 8 bridged over the source region 6 and the p+ contact region 4. Since there exists almost no step difference at the base of the source electrode 8, the occurrence of the electromigration of, the break in and the local increase in the electric resistance of the source electrode 8 is suppressed. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于防止电极断裂发生的半导体器件，电阻的局部增加和电迁移等，并提供其制造方法。解决方案：制造方法依次形成高电阻SiC层2和p阱区域3，进行沟道层5的外延生长，此后，形成沟道层5的一部分的p +接触区域4，以及 p阱区域3通过使用向p +接触区域4的上部开放的注入掩模形成围绕p +接触区域4的侧面的源极区域6，然后形成桥接在源极区域6上的源极电极8 和p +接触区域4.由于在源电极8的基部几乎没有阶梯差，所以抑制了电极的电迁移，电源电极8的电阻的局部增加的发生。版权所有（C）2005，JPO＆NCIPI

112. 发明专利

JP2004014709A Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：JP2004014709A
公开(公告)日：2004-01-15
申请号：JP2002164631
申请日：2002-06-05
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： UCHIDA MASAO , KITAHATA MAKOTO , MIYANAGA RYOKO , TAKAHASHI KUNIMASA , KUSUMOTO OSAMU , YAMASHITA MASAYA
IPC分类号： H01L21/28 , H01L21/301 , H01L21/336 , H01L29/12 , H01L29/41 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device capable of reducing the occurrence of a defective element due to the breakage or chipping off of a crystal in chip separation. SOLUTION: On a wafer 11 comprising a silicon carbide substrate and a silicon carbide layer, an upper electrode 6 is arranged side by side nearly along a direction Y which is one of cleavage directions and a direction X which is tilted from the cleavage direction by at least 5°. Then, when separating an element formed on the wafer 11 into a plurality of chips 10, the chip is cut off along a separation line 14a which is nearly parallel to the cleavage direction Y and a separation line 14b which is nearly parallel to the direction X. In this case, arranging of the electrode 6 side by side and chip separation are performed with a step formed on the silicon carbide as reference, thereby the cleavage direction is known precisely to reduce occurrence of the breakage or chipping off in the semiconductor chip in chip separation. COPYRIGHT: (C)2004,JPO
摘要翻译：解决问题的方案：提供一种半导体器件的制造方法，该半导体器件能够减少由于芯片分离中的晶体的断裂或破裂而导致的缺陷元件的发生。解决方案：在包括碳化硅衬底和碳化硅层的晶片11上，上电极6大致沿着作为解理方向之一的方向Y和从切割方向倾斜的方向X并排布置方向至少5°。然后，当将形成在晶片11上的元件分成多个芯片10时，沿着与解理方向Y几乎平行的分离线14a切割芯片，并且分离线14b几乎平行于X方向在这种情况下，以碳化硅为基准的台阶形成并列排列电极6和芯片分离，精确地知道切割方向，以减少半导体芯片中的断裂或破裂的发生芯片分离。版权所有（C）2004，JPO

113. 发明专利

JP2003347235A Method of manufacturing semiconductor device 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：JP2003347235A
公开(公告)日：2003-12-05
申请号：JP2002153410
申请日：2002-05-28
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： TAKAHASHI KUNIMASA , UCHIDA MASAO , KUSUMOTO OSAMU , YAMASHITA MASAYA , KITAHATA MAKOTO
IPC分类号： H01L29/872 , H01L21/265 , H01L21/338 , H01L29/16 , H01L29/47 , H01L29/812 , H01L29/861
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device having favorable electrical characteristics. SOLUTION: An ion-implanted layer 12 having an impurity ion peak is formed in an SiC substrate 11 by implanting an impurity ion into the substrate 11. Then the substrate 11 is stuck to another SiC substrate 13 and the stuck substrates 11 and 13 are disposed in an annealing furnace and heated in an argon atmosphere. Consequently, the semiconductor device having superior electrical characteristics can be manufactured by using the SiC substrate 11, because a largely damaged upper ion-implanted layer 12b containing the impurity ion at a low concentration of the ion-implanted layer 12 can be removed simultaneously when the annealing is performed. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供一种制造具有良好电气特性的半导体器件的方法。解决方案：通过将杂质离子注入到基板11中，在SiC基板11中形成具有杂质离子峰的离子注入层12.然后将基板11粘贴到另一个SiC基板13上，并将卡住的基板11和 13设置在退火炉中并在氩气气氛中加热。因此，可以通过使用SiC衬底11来制造具有优异的电特性的半导体器件，因为当离子注入层12的低浓度下含有杂质离子的上部离子注入层12b被大量损坏时，进行退火。版权所有（C）2004，JPO

114. 发明专利

JP2003243323A SEMICONDUCTOR ELEMENT AND ITS MANUFACTURING METHOD 审中-公开
公开(公告)号：JP2003243323A
公开(公告)日：2003-08-29
申请号：JP2002140864
申请日：2002-05-16
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： MIYANAGA RYOKO , UCHIDA MASAO , TAKAHASHI KUNIMASA , KITAHATA MAKOTO , KUSUMOTO OSAMU , YAMASHITA MASAYA
IPC分类号： H01L21/28 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor element that can be driven by a large current under a high voltage by excellently adhering electrode pads, wiring, and electrodes to each other and is composed of SiC, and to provide a method of manufacturing the element. SOLUTION: The semiconductor element is equipped with an SiC substrate 1, an SiC layer 2 provided on the substrate 1, and a Schottky electrode 7 and an upper-surface electrode pad 4 successively provided on the layer 2 in this order. The element is also equipped with an ohmic electrode 3 provided on the rear surface of the substrate 1 and composed of Ni, and a rear-surface electrode pad 14 provided on the electrode 3 and composed of a Ti layer 5 and an Au layer 6. Since the upper surface of the ohmic electrode 3 is treated for removing Ni carbides, the adhesion between the electrode 3 and the Ti layer 5 is strong. Consequently, occurrence of a resistance increase in the electrode 3 due to the imperfect contact between the electrode and the layer 5 can be suppressed. COPYRIGHT: (C)2003,JPO

115. 发明专利

JP2003168653A SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
公开(公告)号：JP2003168653A
公开(公告)日：2003-06-13
申请号：JP2001368955
申请日：2001-12-03
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： UCHIDA MASAO , KITAHATA MAKOTO , MIYANAGA RYOKO , TAKAHASHI KUNIMASA , KUSUMOTO OSAMU , YAMASHITA MASAYA
IPC分类号： H01L21/28
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device in which peeling of an electrode or contact resistance increase is suppressed and deterioration of a device element is hard to occur, and to provide a method of manufacturing the same. SOLUTION: A mask layer 15 is formed on a part of a SiC substrate 11, and N, as an impurity, is implanted. By setting the thickness of the mask layer 15 thinner than the implanted depth of the impurity, a high dose region 12 is formed in a region, not covered by the mask, of the upper part of the SiC substrate 11, while low-dose regions 13 are formed in regions, covered by the mask, of the upper part of the SiC substrate 11. After the impurity is activated by heat treatment, and after an upper part of the high-dose region 12 and of the low-dose regions 13 are removed, an ohmic electrode 14 that contacts the high-dose region 12 and the low-dose regions 13 and that is made of Ni, is formed. COPYRIGHT: (C)2003,JPO

116. 发明专利

JP2002093920A SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：JP2002093920A
公开(公告)日：2002-03-29
申请号：JP2001192338
申请日：2001-06-26
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： YOKOGAWA TOSHIYA , TAKAHASHI KUNIMASA , KITAHATA MAKOTO , KUSUMOTO OSAMU , UENOYAMA TAKESHI , MIYAZAKI MITSUHARU
IPC分类号： H05B41/24 , H01L21/822 , H01L21/8234 , H01L21/8238 , H01L27/04 , H01L27/088 , H01L27/092 , H01L29/47 , H01L29/78 , H01L29/872
摘要： PROBLEM TO BE SOLVED: To mount plural active elements having a high withstand voltage and carrier transit characteristic on a common substrate by using compound semiconductor layer. SOLUTION: A first active region 12 formed by alternately laminating N-type doped layers 12a of high concentration and undoped layers 12b, and a second active region 13 formed by alternately laminating P-type doped layer 13a of high concentration and undoped layers 13b, are formed on an SiC substrate 10 in this order from below. A Schottky diode 20 and a PMOSFET 30 are formed on the first active region 12. An NMOSFET 40, a capacitor 50 and an inductor 60 are formed on the second active region 13. The Schottky diode 20 and the MOSFETs 30, 40 have withstand voltage characteristic and carrier transit characteristic by the laminated structure of δ doped layers and the undoped layers, and are integrated on the common substrate.

117. 发明专利

JP2002050277A ELECTRON EMISSION ELEMENT, ELECTRON EMISSION SOURCE, AND IMAGE DISPLAY DEVICE USING THEM 审中-公开
公开(公告)号：JP2002050277A
公开(公告)日：2002-02-15
申请号：JP2001204019
申请日：2001-07-04
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： KUROKAWA HIDEO , SHIRATORI TETSUYA , DEGUCHI MASAHIRO , KITAHATA MAKOTO
IPC分类号： H01J1/304 , H01J29/04 , H01J31/12
摘要： PROBLEM TO BE SOLVED: To provide an electron emission element which can be manufactured at a low cost, can efficiently emit electrons, and has high stability, by using a particle or a coagulation body of the particles containing carbon material of a six-carbocyclic structure as an electron emission part. SOLUTION: The electron emission element has at least a first electrode and an electron emission part located on the first electrode. The electron emission part has the particle or the coagulation body of the particles. The particle contains carbon material having the six-carbocycle structure. For example, the carbon material having the six-cabocycle structure contains graphite or carbon nano-tubes as a major component.

118. 发明专利

JP2001077027A GROWTH METHOD FOR SEMICONDUCTOR THIN-FILM COMPRISING DOPE LAYER 失效
公开(公告)号：JP2001077027A
公开(公告)日：2001-03-23
申请号：JP25113399
申请日：1999-09-06
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： TAKAHASHI KUNIMASA , KITAHATA MAKOTO , UCHIDA MASAO
IPC分类号： H01L21/205
摘要： PROBLEM TO BE SOLVED: To grow a semiconductor thin-film comprising pn junction of abrupt profile by, during growth of a thin-film on a base material set in the space within a reactive furnace, supplying impurity such as doping gas into the reactive furnace while changing the supply amount of at least one kind of material gas. SOLUTION: Nitrogen is supplied as an n-type impurity doping gas 12 to form an n-type dope layer on an undope layer. With the flow rate of the hydrogen gas of diluted gas 11 as well as silane gas of material gas 8 kept constant, the nitrogen of doping gas 12 is supplied while the flow rate of propane gas of material gas 7 is reduced by controlling a flow meter 1, to form an n-type dope layer. When the flow rate of propane gas of material gas 7 is reduced while that of nitrogen gas U impurity doping gas 11 is kept constant, a carrier density increases. As a result, taking-in of nitrogen in a silicon carbide thin-film is controlled only by changing the flow-rate ratio between propane gas and silane gas of material gas.

119. 发明专利

JP2000323015A ELECTRON EMISSION ELEMENT 失效
公开(公告)号：JP2000323015A
公开(公告)日：2000-11-24
申请号：JP33706499
申请日：1999-11-29
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： UENOYAMA TAKESHI , TODA TAKAO , DEGUCHI MASAHIRO , KITAHATA MAKOTO , SETSUNE KENTARO
IPC分类号： H01J19/24 , H01J1/30 , H01J1/308 , H01J21/04
摘要： PROBLEM TO BE SOLVED: To provide an electron emission element having a good electron emission characteristic. SOLUTION: This electron emission element has an electron supply layer 1 constituted of an n-GaN layer, an electron transfer layer 2 for transferring electrons to the surface side and constituted of non-doped (intrinsic) Alx Ga1-x N(0

120. 发明专利

JP2000268706A ELECTRON EMITTING ELEMENT AND IMAGE DRAWING DEVICE USING THE SAME 失效
公开(公告)号：JP2000268706A
公开(公告)日：2000-09-29
申请号：JP7333499
申请日：1999-03-18
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： DEGUCHI MASAHIRO , KITAHATA MAKOTO , IMAI KANJI , SEKIGUCHI TOMOHIRO , KUROKAWA HIDEO , KOGA KEISUKE , SHIRATORI TETSUYA , KAWASE TORU
IPC分类号： H01J29/04 , G09G3/22 , H01J1/304 , H01J3/02 , H01J31/12 , H01J1/30
摘要： PROBLEM TO BE SOLVED: To provide a highly efficient electron emitting device applicable to a display or the like. SOLUTION: An electron emitting element includes a portion in which electric field strength generated in a space between a control electrode 4 and an electron emitting portion 3 when the element is operated is smaller than that between an anode electrode 5 and the control electrode 4. An equipotential surface in a space over a surface of the electron emitting portion 3 has a shape with curvature being convex toward the electron emitting portion 3 while concave toward the opposite anode electrode 5.

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