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92. 发明专利

JP2007537597A Imaging and equipment in a lithography 有权
公开(公告)号：JP2007537597A
公开(公告)日：2007-12-20
申请号：JP2007513187
申请日：2005-04-29
申请人：インテル・コーポレーション
发明人：テジニル，エディタ , ボロドフスキー，ヤン
IPC分类号： H01L21/027 , G03F1/00 , G03F1/08 , G03F1/14 , G03F7/20
CPC分类号： G03F1/80 , G03F1/28 , G03F1/32 , G03F7/70283 , G03F7/70291 , G03F7/70433
摘要：リソグラフィのためのシステムおよび技術である。ある側面において、本方法は、ゼロ回折次数の放射線強度および位相を放射線の１波長未満のピッチ寸法を有するサブ波長のフィーチャを含む装置で変調することにより、マイクロエレクトロニクス装置を生成する段階を含む。

93. 发明专利

JP2007311788A Optical proximity effect correction method 有权
标题翻译：光临近效应校正方法
公开(公告)号：JP2007311788A
公开(公告)日：2007-11-29
申请号：JP2007124379
申请日：2007-05-09
申请人： Carl Zeiss Smt Ag , カール・ツァイス・エスエムティー・アーゲー
发明人： GRAEUPNER PAUL
IPC分类号： H01L21/027 , G02B13/02
CPC分类号： G03F7/70441 , G03F1/36 , G03F7/70283 , G03F7/70308
摘要： PROBLEM TO BE SOLVED: To provide an optical proximity correction method that can reduce the cost in the case of its application to the processing status where the lithographic method is changed. SOLUTION: When an optical proximity effect is corrected for image formation of a pattern, which has been arranged on an object surface, on an image surface by a projection objective lens, optical filtering used for the image formation is adapted to the pattern by at least one OPC filter inserted between the object surface and the image surface and is performed according to an OPC filter function corresponding to spatial-dependent transparent filtering in the pupil surface region of an image formation system. In this case, the contour of a pupil transmission function is adapted to a pattern characterized by the position of order of diffraction of a mask by the OPC filter. As a result, it becomes possible to have an optimum pupil transmission rate that can minimize linewidth variation depending on the linear density on the image surface for all orders of diffraction that contribute to the image formation. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种光学邻近校正方法，其可以在将其应用于光刻方法改变的处理状态的情况下降低成本。解决方案：当通过投影物镜校正已经布置在物体表面上的图案的图像形成的光学邻近效应时，用于图像形成的光学滤波适用于图案通过插入在物体表面和图像表面之间的至少一个OPC滤光器，并且根据与图像形成系统的光瞳表面区域中的与空间相关的透明滤光相对应的OPC滤光器功能来执行。在这种情况下，光瞳传播功能的轮廓适用于由OPC滤光片的掩模衍射次序的位置表征的图案。结果，可以获得最佳的光瞳透射率，该最佳光瞳透射率可以根据有助于图像形成的所有衍射级数，根据图像表面上的线密度来最小化线宽变化。版权所有（C）2008，JPO＆INPIT

94. 发明专利

JP3984428B2 Lithographic projection apparatus, a mask table and a method for manufacturing a device 有权
公开(公告)号：JP3984428B2
公开(公告)日：2007-10-03
申请号：JP2001079637
申请日：2001-03-21
申请人：エーエスエムエルネザーランズビー.ブイ.
发明人：ヨハネスヨゼフスファンディユスセルドンクアントニウス
IPC分类号： G03F9/00 , H01L21/027 , G03F7/20
CPC分类号： G03F7/707 , G03F7/70266 , G03F7/70283 , G03F7/703
摘要： In a lithographic projection apparatus, a reflective-type mask MA is attached to a compliant membrane 110 on a mask table MT. The backside of the membrane is in turn attached to a plurality of actuators 140 which are operable to deform the membrane. A mask level sensor can be used to detect the level of the mask and the actuators operate to keep the mask at a constant level. Additionally, the actuators may also serve to keep the mask flat and in the correct planar orientation. FIG. 3

95. 发明专利

JP2007251152A Exposure apparatus, exposure method and method of manufacturing device 审中-公开
标题翻译：曝光装置，曝光方法和制造装置的方法
公开(公告)号：JP2007251152A
公开(公告)日：2007-09-27
申请号：JP2007036676
申请日：2007-02-16
申请人： Nikon Corp , 株式会社ニコン
发明人： NAGASAKA HIROYUKI
IPC分类号： H01L21/027 , G03F7/20
CPC分类号： G03F7/70341 , G03F7/70208 , G03F7/70275 , G03F7/70283 , G03F7/706 , G03F9/7026 , G03F9/7088
摘要： PROBLEM TO BE SOLVED: To provide an exposure apparatus capable of excellently aligning patterns and highly efficiently performing multiple exposure of a substrate. SOLUTION: The exposure apparatus EX is provided with a projection optical system PL capable of forming an image of a first pattern PA1 on a first exposure region AR1 and forming an image of a second pattern PA2 different from that of the first pattern PA1 on a second exposure region AR2; and a first detecting system 10 for obtaining at least any one of position information of the image of the first pattern PA1 and position information of the image of the second pattern PA2. The apparatus EX adjusts the position relation between the images of the first and second patterns PA1, PA2 and a predetermined region S on a substrate P on the basis of a result of detection, and performs multiple exposure for the predetermined region S on the substrate P using the images of the first and second patterns PA1, PA2. With this configuration, multiple exposure can be highly efficiently performed for the substrate. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供能够极好地对准图案并高效地执行基板的多次曝光的曝光装置。解决方案：曝光装置EX设置有能够在第一曝光区域AR1上形成第一图案PA1的图像并形成与第一图案PA1不同的第二图案PA2的图像的投影光学系统PL 在第二曝光区域AR2上; 以及用于获得第一图案PA1的图像的位置信息和第二图案PA2的图像的位置信息中的至少一个的第一检测系统10。设备EX根据检测结果调整第一和第二图案PA1，PA2的图像与基板P上的预定区域S之间的位置关系，并对基板P上的预定区域S进行多次曝光使用第一和第二图案PA1，PA2的图像。利用该结构，可以高效地对基板进行多次曝光。版权所有（C）2007，JPO＆INPIT

96. 发明专利

JP2007158328A Lithographic apparatus and device manufacturing method 审中-公开
标题翻译： LITHOGRAPHIC装置和装置制造方法
公开(公告)号：JP2007158328A
公开(公告)日：2007-06-21
申请号：JP2006317735
申请日：2006-11-24
申请人： Asml Netherlands Bv , エーエスエムエルネザーランズビー.ブイ.
发明人： CHEN ALEK CHI-HENG , HANSEN STEVEN GEORGE
IPC分类号： H01L21/027 , G03F1/08 , G03F7/20
CPC分类号： G03F7/70283 , G03F1/32 , G03F1/34 , G03F7/70308 , G03F7/70433 , G03F7/705
摘要： PROBLEM TO BE SOLVED: To provide an exposure method having sufficient process latitude (that is, a combination of usable depth of focus and allowable variance of exposure dose for a given tolerance in the minimum dimension) for imaging of small contact holes. SOLUTION: A method of transferring an image of a pattern onto a substrate with a lithographic apparatus using an attenuated phase shift mask or a binary mask comprises: a step of selecting multiple parameters including a pupil filter parameter; a step of calculating an image of a pattern for the selected parameters; a step of calculating a metric that represents a variation of an attribute of the calculated image over a process range; and a step of adjusting the multiple parameters on the basis of a result of the metric. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了提供用于小接触孔成像的具有足够的工艺自由度（即，可用的深度焦点的浓度和允许的曝光剂量的变化对于给定的最小尺寸的公差）的曝光方法。解决方案：使用衰减相移掩模或二进制掩模的光刻设备将图案的图像转印到基板上的方法包括：选择包括瞳孔滤光器参数的多个参数的步骤; 计算所选参数的图案的图像的步骤; 计算表示所计算的图像在处理范围上的属性的变化的度量的步骤; 以及基于度量的结果来调整多个参数的步骤。版权所有（C）2007，JPO＆INPIT

97. 发明专利

JP2006278960A Exposure equipment 审中-公开
标题翻译：曝光设备
公开(公告)号：JP2006278960A
公开(公告)日：2006-10-12
申请号：JP2005099416
申请日：2005-03-30
申请人： Canon Inc , キヤノン株式会社
发明人： YAMAMOTO SUMIMASA
IPC分类号： H01L21/027
CPC分类号： G03F7/70283 , G03F7/702 , G03F7/706 , G03F9/7065 , G03F9/7088
摘要： PROBLEM TO BE SOLVED: To provide an optical element which is suitable for measurement by extreme ultraviolet rays where it is difficult to use a transmission type optical element, exposure equipment using the optical element, and a device manufacturing method using the exposure equipment.
SOLUTION: The exposure equipment projects a pattern of an original plate to a substrate by the extreme ultraviolet rays from a light source through an optical system. The optical elements are positioned on either the light source side of the original plate in the optical pass from the light source to the substrate or the substrate side of the original plate, and include a film through which the extreme ultraviolet rays are transmitted and a shading member which is located on the film and shades a part of the film.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种适用于难以使用透射型光学元件的极紫外线测量的光学元件，使用该光学元件的曝光设备以及使用该曝光设备的设备制造方法。
解决方案：曝光设备通过光源通过光学系统的极紫外线将原版图案投射到基板。光学元件位于原版光源侧的从光源到原版的基板或基板侧的光学通路中，并且包括透过极紫外线的膜和阴影位于电影上的成员遮蔽了电影的一部分。版权所有（C）2007，JPO＆INPIT

98. 发明专利

JP2006259699A Method for producing photolithography patterning device, computer program, patterning device, method for determining position of target image on or near substrate, measuring device, and lithography device 有权
标题翻译：用于制造光刻图案装置的方法，计算机程序，图案装置，用于确定目标图像在或靠近基板上的位置的方法，测量装置和图像装置
公开(公告)号：JP2006259699A
公开(公告)日：2006-09-28
申请号：JP2006025174
申请日：2006-02-02
申请人： Asml Netherlands Bv , エイエスエムエルネザランドズベスローテンフエンノートシャップ
发明人： MICKAN UWE , MEIJER HENDRICUS JOHANNES MARI
IPC分类号： G03F1/00 , G03F1/24 , H01L21/027
CPC分类号： G03F7/70433 , B82Y10/00 , B82Y40/00 , G03F1/24 , G03F7/70283 , G03F7/70666 , G03F9/7003 , G03F9/7076 , G03F9/7088
摘要： PROBLEM TO BE SOLVED: To provide a method for producing a photolithography patterning device, and a lithography device using the method.
SOLUTION: Target dimensions and orientations are defined at the stage of creating a patterning device, and the effective shadow angle of the radiation is calculated at a plurality of points. Based on this, the thickness of the absorber layer or the intensity attenuation of the absorber of the patterning device is adjusted so as to compensate the displacement and the dimension errors of the desired image. The lithography device is a projection and exposure device using the patterning device. It is equipped with a measuring device used for determining the target position of the image, and composed so that the position and the dimension errors of the target image can be compensated for, corresponding to the result of the detection by the detector.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于制造光刻图案形成装置的方法和使用该方法的光刻装置。解决方案：在创建图案形成装置的阶段中定义目标尺寸和取向，并且在多个点处计算辐射的有效阴影角。基于此，调整吸收层的厚度或图案形成装置的吸收体的强度衰减，以补偿期望图像的位移和尺寸误差。光刻设备是使用图案形成装置的投影和曝光装置。它配备有用于确定图像的目标位置的测量装置，并且被构成使得可以根据检测器的检测结果来补偿目标图像的位置和尺寸误差。版权所有（C）2006，JPO＆NCIPI

99. 发明专利

JP2006210928A Structure for projecting pattern on image surface 审中-公开
标题翻译：用于投影图像图案的结构
公开(公告)号：JP2006210928A
公开(公告)日：2006-08-10
申请号：JP2006019045
申请日：2006-01-27
申请人： Infineon Technologies Ag , インフィネオンテクノロジーズアクチエンゲゼルシャフト
发明人： MOUKARA MOLELA , PFORR RAINER , MUELDERS THOMAS , HENNIG MARIO , ZEILER KARSTEN
IPC分类号： H01L21/027 , G03F1/00 , G03F7/20
CPC分类号： G03F7/70283 , G03F1/30 , G03F1/32 , G03F7/701 , G03F7/70108 , G03F7/70125
摘要： PROBLEM TO BE SOLVED: To provide a structure, capable of simultaneously projecting a periodic line interval plane diffraction grating of a memory cell region and a peripheral structure pattern that is formed intricately. SOLUTION: The quality of image formation, when an image is simultaneously transmitted from a line interval plane diffraction grating and a peripheral structure including MUX row, is improved by using a quadrupole illumination. Four poles 14a to 14d of this quadrupole illumination extend in the longitudinal direction, and the axis 112 of the pole in the longitudinal direction is located vertical, with respect to the row direction of the grating row of a mask. Thus, the contrast of a structure image formation of the line interval planar diffraction grating, MEEF, and a process window can be improved. Meanwhile, the geometrical accuracy of the peripheral structure (particularly, MUX row) is stabilized by an illumination pupil 18, extending over the entire wide depth range of focus. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供能够同时投影存储单元区域的周期性行间隔平面衍射光栅和复杂形成的周边结构图案的结构。解决方案：通过使用四极照明来改善图像从线间隔平面衍射光栅同时传输的图像形成和包括MUX行的外围结构的质量。该四极照明的四极14a至14d在纵向方向上延伸，并且杆的纵向方向的轴线112相对于掩模的光栅行的行方向位于垂直方向。因此，可以提高线间隔平面衍射光栅的结构图像形成的对比度，MEEF和处理窗口。同时，周边结构（特别是MUX行）的几何精度通过在整个宽的深度聚焦范围上延伸的照明光瞳18而稳定。版权所有（C）2006，JPO＆NCIPI

100. 发明专利

JP2006135332A Lithography system and device manufacturing method 审中-公开
标题翻译： LITHOGRAPHY系统和器件制造方法
公开(公告)号：JP2006135332A
公开(公告)日：2006-05-25
申请号：JP2005321293
申请日：2005-11-04
申请人： Asml Holding Nv , エーエスエムエルホールディングナームローゼフェンノートシャップASML Holding N.V.
发明人： LIPSON MATTHEW , LATYPOV AZAT M
IPC分类号： H01L21/027 , G03F7/20
CPC分类号： G03F7/70291 , G03F7/70283
摘要： PROBLEM TO BE SOLVED: To provide a system and a method in which the optical performance of a mask-less lithography system is improved. SOLUTION: The lithography system 1 comprises an illumination system IL that supplies radiation beams and a projection system PS. The projection system PS comprises an optical system and a patterning device PD located at a pupil plane. The patterning device PD patterns the radiation beams and the optical system projects the patterned radiation beams onto the target of a substrate W. COPYRIGHT: (C)2006,JPO&NCIPI

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