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1. 发明专利

JP2006210928A Structure for projecting pattern on image surface 审中-公开
标题翻译：用于投影图像图案的结构
公开(公告)号：JP2006210928A
公开(公告)日：2006-08-10
申请号：JP2006019045
申请日：2006-01-27
申请人： Infineon Technologies Ag , インフィネオンテクノロジーズアクチエンゲゼルシャフト
发明人： MOUKARA MOLELA , PFORR RAINER , MUELDERS THOMAS , HENNIG MARIO , ZEILER KARSTEN
IPC分类号： H01L21/027 , G03F1/00 , G03F7/20
CPC分类号： G03F7/70283 , G03F1/30 , G03F1/32 , G03F7/701 , G03F7/70108 , G03F7/70125
摘要： PROBLEM TO BE SOLVED: To provide a structure, capable of simultaneously projecting a periodic line interval plane diffraction grating of a memory cell region and a peripheral structure pattern that is formed intricately. SOLUTION: The quality of image formation, when an image is simultaneously transmitted from a line interval plane diffraction grating and a peripheral structure including MUX row, is improved by using a quadrupole illumination. Four poles 14a to 14d of this quadrupole illumination extend in the longitudinal direction, and the axis 112 of the pole in the longitudinal direction is located vertical, with respect to the row direction of the grating row of a mask. Thus, the contrast of a structure image formation of the line interval planar diffraction grating, MEEF, and a process window can be improved. Meanwhile, the geometrical accuracy of the peripheral structure (particularly, MUX row) is stabilized by an illumination pupil 18, extending over the entire wide depth range of focus. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供能够同时投影存储单元区域的周期性行间隔平面衍射光栅和复杂形成的周边结构图案的结构。解决方案：通过使用四极照明来改善图像从线间隔平面衍射光栅同时传输的图像形成和包括MUX行的外围结构的质量。该四极照明的四极14a至14d在纵向方向上延伸，并且杆的纵向方向的轴线112相对于掩模的光栅行的行方向位于垂直方向。因此，可以提高线间隔平面衍射光栅的结构图像形成的对比度，MEEF和处理窗口。同时，周边结构（特别是MUX行）的几何精度通过在整个宽的深度聚焦范围上延伸的照明光瞳18而稳定。版权所有（C）2006，JPO＆NCIPI

2. 发明专利

JP2006013494A Reflective mask, method of using the reflective mask, and method of manufacturing the reflective mask 审中-公开
标题翻译：反射掩模，使用反射掩模的方法和制造反射掩模的方法
公开(公告)号：JP2006013494A
公开(公告)日：2006-01-12
申请号：JP2005179958
申请日：2005-06-20
申请人： Infineon Technologies Ag , インフィネオンテクノロジーズアクチエンゲゼルシャフト
发明人： KAMM FRANK-MICHAEL , PFORR RAINER , CRELL CHRISTIAN
IPC分类号： H01L21/027 , G03C5/00 , G03F1/24 , G03H1/02 , G21K5/00
CPC分类号： B82Y10/00 , B82Y40/00 , G03F1/24 , G03F1/70 , G21K2201/067
摘要： PROBLEM TO BE SOLVED: To provide a reflective mask wherein flare effect is weakened and further the minimum thickness can be obtained, and a method of using the reflective mask.
SOLUTION: The reflective mask has a structure (20) for transferring a layout to a target substrate by using lithography. The reflective mask is particularly used in EUV lithography and further has a reflection multilayer structure (11) having at least a flare reduction layer (13') disposed partially at least on a bright field of the multilayer structure (11). Moreover, the method of using the reflective mask and the method of manufacturing the reflective mask are also provided.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种反射掩模，其中闪光效果被削弱，并且还可以获得最小厚度，以及使用该反射掩模的方法。解决方案：反射掩模具有用于通过使用光刻将布局转印到目标基板的结构（20）。反射掩模特别用于EUV光刻中，并且还具有反射多层结构（11），该反射多层结构（11）至少部分地至少设置在多层结构（11）的明场上的扩张减少层（13'）。此外，还提供了使用反射掩模的方法和制造反射掩模的方法。版权所有（C）2006，JPO＆NCIPI

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