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91. 发明专利

JP2012129530A Method for measuring dopant concentration during plasma ion implantation 审中-公开
标题翻译：用于在等离子体植入过程中测量痰浓度的方法
公开(公告)号：JP2012129530A
公开(公告)日：2012-07-05
申请号：JP2011279194
申请日：2011-12-21
申请人： Applied Materials Inc , アプライドマテリアルズインコーポレイテッドApplied Materials,Incorporated
发明人： MAJID A FORD , LI SHIJIAN
IPC分类号： H01L21/265 , C23C14/48 , H01J37/32 , H05H1/00 , H05H1/46
CPC分类号： G01N21/68 , G01N21/59 , H01L21/26513 , H01L22/12 , H01L22/26
摘要： PROBLEM TO BE SOLVED: To provide a method for end point detection at a predetermined dopant concentration during a plasma doping process.SOLUTION: The method includes: positioning a substrate within a process chamber; generating a plasma above the substrate and transmitting a light generated by the plasma through the substrate, wherein the light enters a topside and exits a backside of the substrate; and receiving the light by a sensor positioned below the substrate. The method further includes: generating a signal proportional to the light received by the sensor; implanting the substrate with a dopant during a doping process; generating multiple light signals proportional to a decreasing amount of the light received by the sensor during the doping process; generating an end point signal proportional to the light received by the sensor once the substrate has a final dopant concentration; and ceasing the doping process.
摘要翻译：要解决的问题：提供在等离子体掺杂过程期间以预定掺杂剂浓度的端点检测的方法。解决方案：该方法包括：将衬底定位在处理室内; 在所述衬底上产生等离子体并且透射由所述等离子体产生的光通过所述衬底，其中所述光进入顶侧并离开所述衬底的背面; 并且通过位于基板下方的传感器接收光。该方法还包括：产生与由传感器接收的光成比例的信号; 在掺杂过程中用掺杂剂注入衬底; 在掺杂过程期间产生与传感器接收的光的减少量成比例的多个光信号; 一旦衬底具有最终掺杂剂浓度，产生与传感器接收的光成比例的终点信号; 并停止掺杂过程。版权所有（C）2012，JPO＆INPIT

92. 发明专利

JP4772610B2 Methods of analysis 有权
公开(公告)号：JP4772610B2
公开(公告)日：2011-09-14
申请号：JP2006196946
申请日：2006-07-19
申请人：東京エレクトロン株式会社
发明人：和也土橋 , 茂川村 , 輝幸林 , 浩平継田
IPC分类号： H01L21/66 , G01N1/28
CPC分类号： H01L21/67207 , G01N21/3103 , G01N21/68 , H01J49/0463

93. 发明专利

JP4522783B2 Plasma processing apparatus and plasma processing method 有权
公开(公告)号：JP4522783B2
公开(公告)日：2010-08-11
申请号：JP2004226959
申请日：2004-08-03
申请人：株式会社日立ハイテクノロジーズ
发明人：浩一三嶋 , 豊治奥本 , 昭孝牧野 , 卓司金子
IPC分类号： H01L21/3065
CPC分类号： H01L21/67253 , G01N21/68 , H01J37/32935 , H01J37/32972

94. 发明专利

JP4351192B2 Plasma processing apparatus, and plasma processing of the light detection method 有权
公开(公告)号：JP4351192B2
公开(公告)日：2009-10-28
申请号：JP2005203780
申请日：2005-07-13
申请人：ベリティインストルメンツ、インコーポレイテッド , 東京エレクトロン株式会社
发明人：ウィークスキュニーアンドリュー , 進斉藤
IPC分类号： H01L21/3065 , H05H1/00
CPC分类号： G01N21/68 , H01J37/32972

95. 发明专利

JP2009152304A Plasma processing apparatus 有权
标题翻译：等离子体加工设备
公开(公告)号：JP2009152304A
公开(公告)日：2009-07-09
申请号：JP2007327596
申请日：2007-12-19
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： USUI TAKETO , YOSHIDA TAKESHI , MATSUMOTO TAKESHI , MUTO SATORU , YOKOGAWA KATANOBU
IPC分类号： H01L21/3065
CPC分类号： H01J37/32972 , G01N21/68 , H01J37/32091 , H01J37/32935
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing apparatus for measuring the etching quantity of the material being processed and detecting the end point of etching using optical interference on the surface of a sample being processed, so as to simultaneously achieve long life and ensuring of sufficient light to be received of a light introduction section, to enable long term stable operation and to improve the processing accuracy by accurate etching quantity detection. SOLUTION: In the plasma processing apparatus for processing a sample being processed by generating plasma between a shower plate and a lower electrode, a detector for detecting light from a surface of the sample being processed via the shower plate includes a light introduction section composed of a light guide into which light is entered and a spectroscope for analyzing the light obtained at the light introduction section, wherein the end surface of the light introduction section through which light is entered is arranged at a distance of five times or more the mean free path of gas molecules in the vacuum vessel from the end surface of the shower plate facing the plasma. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于测量被处理材料的蚀刻量的等离子体处理装置，并且在被加工样品的表面上使用光学干涉检测蚀刻终点，以同时实现长寿命并且确保能够接收到光引入部分的足够的光，以使得能够进行长期稳定的操作并且通过精确的蚀刻量检测来提高处理精度。解决方案：在用于处理通过在淋浴板和下电极之间产生等离子体而被处理的样品的等离子体处理装置中，用于检测来自通过淋浴板处理的样品的表面的光的检测器包括光引入部分由入射光的光导和用于分析在光引入部获得的光的分光镜构成，其中进入光的光导入部的端面配置在平均值的5倍以上的距离从喷淋板的面向等离子体的端面的真空容器中的气体分子的自由路径。版权所有（C）2009，JPO＆INPIT

96. 发明专利

JP2009085636A Method and apparatus for evaluating target molecule 审中-公开
标题翻译：评估目标分子的方法和装置
公开(公告)号：JP2009085636A
公开(公告)日：2009-04-23
申请号：JP2007252550
申请日：2007-09-27
申请人： Fujitsu Ltd , 富士通株式会社
发明人： AKI MASAHIKO , ARINAGA KENJI
IPC分类号： G01N21/64 , G01N33/543 , G01N33/551
CPC分类号： G01N33/5438 , G01N21/66 , G01N21/68 , G01N21/69 , G01N2021/6439
摘要： PROBLEM TO BE SOLVED: To provide a novel technique for enabling the evaluation or the like of the comparing judgment of an evaluation target, the judgment of the kind of the evaluation target, the quantification of the evaluation target, the determination of the dissociation constant of the evaluation target and the separation of the objective evaluation target and an impure substance in a label free state. SOLUTION: In a case that AC potential is applied across a substrate electrode and a counter electrode to evaluate the target molecule bonded to the probe molecule bonded on the substrate electrode, for example, at least either one of signal intensity, which is obtained by formula 1: signal intensity=fluorescence intensity at time of application of potential 1-fluorescence of background, and the signal amplitude, which is obtained by formula 2: signal amplitude=ä(fluorescence intensity at time of application of potential 1-fluorescence intensity at time of application of potential 2)/(fluorescence intensity at time of application of potential 2-fluorescence intensity of background)}×100, is measured to evaluate the target molecule. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了提供评价对象的评价等的新颖的技术，评价对象的种类的判断，评价对象的量化，评价对象的判定评估目标的解离常数和客观评估目标的分离以及不标示物质的不纯物质。解决方案：在跨越衬底电极和对电极施加交流电势以评估与结合在衬底电极上的探针分子结合的靶分子的情况下，例如，信号强度，即通过公式1获得：信号强度=应用背景的电位1-荧光时的荧光强度和由公式2获得的信号幅度：信号幅度=ä（施加电位1-荧光时的荧光强度应用电位时的强度2）/（应用电位2荧光强度背景时的荧光强度）}×100，以评估靶分子。版权所有（C）2009，JPO＆INPIT

97. 发明专利

JP2009510670A Plasma generation guidance system 审中-公开
标题翻译：空值
公开(公告)号：JP2009510670A
公开(公告)日：2009-03-12
申请号：JP2008529236
申请日：2006-08-30
申请人：パーキンエルマー・インコーポレイテッドPerkinelmer,Inc.
发明人：モリスロー，ピーター・ジェイ
IPC分类号： H05H1/30 , G01N21/31 , G01N21/73 , G01N27/62 , H01J49/10
CPC分类号： G01N21/73 , G01J3/443 , G01N21/68 , G01N2201/126 , H01J49/105
摘要：トーチにおいてプラズマを維持するための装置が提供される。ある実施例では、装置は、電源に連結するように構成されてトーチの半径面に沿ってループ電流を流すように構成配置された第１の電極を備える。いくつかの実施例では、トーチの半径面はトーチ長手方向軸に実質的と直交する。
摘要翻译：提供了一种用于在割炬中维持等离子体的装置。在某些示例中，该装置包括被配置为耦合到电源并被构造和布置成沿着焊炬的径向平面提供回路电流的第一电极。在一些示例中，焊炬的径向平面基本上垂直于焊炬的纵向轴线。

98. 发明专利

JP4227023B2 Microwave plasma source 有权
公开(公告)号：JP4227023B2
公开(公告)日：2009-02-18
申请号：JP2003568942
申请日：2002-08-23
申请人：ヴァリアンオーストラリアピーティーワイ.エルティーディー.
发明人：ハマー，マイケル，ロン
IPC分类号： G01N21/73 , G01N21/68 , H01J37/32 , H05H1/24 , H05H1/30
CPC分类号： G01N21/73 , G01N21/68 , H05H1/30

99. 发明专利

JP2008026063A Analyzing method and analyzer 有权
标题翻译：分析方法和分析仪
公开(公告)号：JP2008026063A
公开(公告)日：2008-02-07
申请号：JP2006196946
申请日：2006-07-19
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： DOBASHI KAZUYA , KAWAMURA SHIGERU , TSUGITA KOHEI , HAYASHI TERUYUKI
IPC分类号： G01N1/28 , G01N33/00 , H01L21/66
CPC分类号： H01L21/67207 , G01N21/3103 , G01N21/68 , H01J49/0463
摘要： PROBLEM TO BE SOLVED: To provide an analyzing method which analyzes the substance to be analyzed under a film with good precision in the case where the substance to be analyzed on a substrate is covered with the film, and also to provide an analyzer for the analyzing method.
SOLUTION: The analyzer has: a first treatment part for irradiating the film formed on a substrate with ultraviolet rays to remove the same; a second treatment part for supplying a dissolving solution to the surface of the substrate to dissolve the substance on the substrate; and a third treatment part for analyzing the substance in the dissolving solution used in the second process.
COPYRIGHT: (C)2008,JPO&INPIT

100. 发明专利

JP3932368B2 Plasma generating apparatus 有权
公开(公告)号：JP3932368B2
公开(公告)日：2007-06-20
申请号：JP2006511513
申请日：2005-03-25
申请人：国立大学法人北陸先端科学技術大学院大学
发明人：栄一民谷 , 亜紀子飯塚 , 禅高村
IPC分类号： G01N21/71 , G01N21/68
CPC分类号： G01N21/68 , G01N21/67 , G01N21/69

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