会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 2. 发明公开
    • Distributed feedback semiconductor laser
    • 分布式反馈半导体激光器
    • EP0195425A3
    • 1987-12-09
    • EP86103692
    • 1986-03-19
    • NEC CORPORATION
    • Yamaguchi, Masayuki
    • H01S03/19H01S03/06
    • H01S5/12H01S5/028H01S5/10H01S5/124H01S5/1243
    • The distributed feedback semiconductor laser (DFB-laser) comprises a stripe-shaped light emitting region, a periodic corrugation structure disposed in the advancing direction of light and adjoining the stripe-shaped light emitting region, and facets of different reflectivities at the ends of the light emitting region. The periodic corrugation structure has a phase shift region located nearer to the end facet of higher reflectivity. The phase shift region is adapted to cause a desired optical phase shift to the light travelling therein. In the DFB, it is particularly preferable thatthe length of the phase shift region is set to (1+2n)/4 times (n:0 or positive integer) as much as the wavelength of the light travelling the phase shift region or to π/2 times the inverse of the difference in propagation constant between when the light is travelling the phase shift region and when travelling the other regions of the periodic corrugation structure, so that the optical phase shift caused by the phase shift region may be π/2. This DFB-laser has ends of different reflectivities and is capable of a stable single wavelength oscillation.
    • 3. 发明公开
    • Distributed-feedback semiconductor laser
    • 分布式反馈半导体激光器
    • EP0149462A3
    • 1987-05-27
    • EP85100132
    • 1985-01-08
    • NEC CORPORATION
    • Yamaguchi, Masayuki
    • H01S03/19H01S03/06
    • H01S5/12
    • The distributed-feedback (DFB) semiconductor laser diode comprises an active layer (12) emitting light rays upon injection of an electric current; and an optical waveguide (20) adjoining the active layer, for guiding the light rays together with the active layer (12). The optical waveguide (20) comprises a first semiconductor layer (13) formed in the vicinity of the active layer (12) and having a greater bandgap than that of the active layer (12), whose thickness varies in a corrugation of a prescribed cycle in the direction of the active layer (12), and a second semiconductor layer (14) having a bandgap smaller than that of the first semiconductor layer (13), but greater than that of the active layer (12), and so formed as to confirm the corrugation of the first semiconductor layer (13). First and second cladding layers adjoin the active layer (12) and the optical waveguide (20), respectively, and have bandgaps greater than those of the active layer (12) and of the second semiconductor layer (14). First and second electrodes inject an electric current into the active layer (12) in which a PN junction is formed by forward biasing. Light rays emitted from the active layer (12) interact with the diffraction grating formed by the boundary of the corrugation to receive positive feedback, resulting in laser oscillation in a single longitudinal mode (Fig. 1C).