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1. 发明公开

EP0206642A3 Optical memory semiconductor laser 失效
标题翻译：光学记忆半导体激光
公开(公告)号：EP0206642A3
公开(公告)日：1988-01-07
申请号：EP86304462
申请日：1986-06-11
申请人： SHARP KABUSHIKI KAISHA
发明人： Yano, Seiki , Hijikata, Toshiki
IPC分类号： H01S03/19 , H01S03/23 , G11B07/12
CPC分类号： G11B7/127 , H01S5/2232 , H01S5/24 , H01S5/4031
摘要： An optical memory semiconductor laser apparatus has a recording semiconductor laser device (21) for an optical memory and a replaying semiconductor laser device (22) for an optical memory in a single body, wherein the oscillation threshold current (I) of said replaying semiconductor laser device (22) is smaller than that of said recording semiconductor laser device (21).

2. 发明公开

EP0165060A3 Semiconductor laser beam scanning device 失效
标题翻译：半导体激光束扫描装置
公开(公告)号：EP0165060A3
公开(公告)日：1988-09-21
申请号：EP85304186
申请日：1985-06-12
申请人： FUJI PHOTO FILM CO., LTD
发明人： Horikawa, Kazuo , Watanabe, Hideo
IPC分类号： H01S03/133 , H01S03/23 , G02B26/10 , H04N01/40
CPC分类号： H04N1/4005 , G02B26/123 , H01S5/0683 , H01S5/4025 , H04N1/40037
摘要： A semiconductor laser beam scanning device includes a plurality of semiconductor lasers (11, 12, 13, 14) for emitting respective primary laser beams (41, 42, 43, 44) which are combined into a single laser beam (45) to scan a desired surface (7). The power of the combined laser beam (45) is detected by a laser beam energy detector (52) which applies a laser beam energy signal (P) to a laser drive/control circuit (51). Alternatively, the laser beam energy signal (P) is applied to a comparator (46) which compares the laser beam energy signal with a reference signal (Sr) and issues a difference signal (H/L) to a control circuit (56) connected to a laser drive circuit (55). The laser drive/control circuit (51) for the control circuit (56) is responsive to the applied signal for controllably energizing at least one (14) of the semiconductor lasers to control the power of the laser beam (44) emitted therefrom thereby to keep the power of the combined laser beam (45) at a constant level. The laser beam energy detector (52) may be disposed adjacent to the surface (7) to be scanned for detecting the power of the combined laser beam in each scanning cycle, or may detect a laser beam (87a) divided from the combined laser beam (87) by a beam splitter (92) disposed on a beam path for the combined laser beam.

3. 发明公开

EP0186387A3 An internal-reflection-interference semiconductor laser device 失效
标题翻译：内部反射干涉半导体激光器件
公开(公告)号：EP0186387A3
公开(公告)日：1988-07-13
申请号：EP85309030
申请日：1985-12-12
申请人： SHARP KABUSHIKI KAISHA
发明人： Yamamoto, Osamu , Hayashi, Hiroshi , Morimoto, Taiji , Yamamoto, Saburo
IPC分类号： H01S03/23 , H01S03/08 , H01S03/19
CPC分类号： H01S3/082 , H01S5/10 , H01S5/1021 , H01S5/22
摘要： An internal-reflection-interference semiconductor laser device comprising a first laser operation area ranging from one facet to the internal reflecting section and a second laser operation area ranging from the other facet to the internal reflecting section, wherein the internal-cavity length ℓ 1 of the first laser operation area is shorter than the internal-cavity length ℓ 2 of the second laser operation area, the reflectivity R 1 at the facet on the side of the first laser operation area is smaller than the reflectivity R 2 at the facet on the side of the second laser operation area.

4. 发明公开

EP0193404A3 A semiconductor laser array device 失效
标题翻译：半导体激光阵列器件
公开(公告)号：EP0193404A3
公开(公告)日：1987-12-16
申请号：EP86301414
申请日：1986-02-27
申请人： SHARP KABUSHIKI KAISHA
发明人： Maei, Shigeki , Hayashi, Hiroshi , Yamamoto, Saburo
IPC分类号： H01S03/19 , H01S03/23
CPC分类号： H01S5/4031 , H01S5/2232 , H01S5/2234
摘要： A semiconductor laser array device comprises an active layer (24) for laser oscillation having a plurality of curved portions (240) at substantially right angles to the resonance direction to thereby create the distribution of the refractive index between the curved portions (240) and the flat portions (241) of said active layer (24), resulting in a plurality of laser oscillation operation areas which are positioned between the curved portions (240) of said active layer (24) and which are optically coupled therebetween.

5. 发明公开

EP0174839A3 A semiconductor laser array device 失效
标题翻译：半导体激光器阵列装置
公开(公告)号：EP0174839A3
公开(公告)日：1987-08-12
申请号：EP85306442
申请日：1985-09-11
申请人： SHARP KABUSHIKI KAISHA
发明人： Taneya, Mototaka , Matsui, Sadayoshi , Matsumoto, Mitsuhiro , Yamamoto, Saburo , Yano, Seiki
IPC分类号： H01S03/23 , H01S03/19
CPC分类号： H01S5/4031
摘要： A semiconductor laser array device comprises a plurality of index-guided lasing filaments (9) formed in an active layer (3) in a parallel manner, and an electrical current injection portion (17) formed on the upper face of grown layers, the profile of said electrical current injection portion being asymmetrical with respect to any line (110) which is parallel to the lasing filaments (9). The laser light obtained is limited to a single direction (103') since the laser array can only oscillate in one mode.
摘要翻译：一种半导体激光器阵列器件，包括以平行方式形成在有源层（3）中的多个折射率引导激光丝（9），以及形成在生长层的上表面上的电流注入部分（17）所述电流注入部分相对于平行于激光丝（9）的任何线（110）不对称。由于激光器阵列只能以一种模式振荡，所以获得的激光被限制在单个方向（103'）。

6. 发明公开

EP0091859A3 Method for the production of a semiconductor laser having several independent wavelengths, and such a laser 失效
标题翻译：具有几个独立波长的半导体激光器的制造方法，以及这种激光器
公开(公告)号：EP0091859A3
公开(公告)日：1986-01-15
申请号：EP83400673
申请日：1983-03-31
申请人： Bouadma, Noureddine , Bouley, Jean-Claude , Riou, Jean
发明人： Bouadma, Noureddine
IPC分类号： H01S03/23
CPC分类号： H01S5/20 , H01S5/06255 , H01S5/2059 , H01S5/4031 , H01S5/4087

7. 发明公开

EP0097241A3 Cr-doped yttrium gallium garnet laser 失效
标题翻译： Cr掺杂的钇镓石榴石激光器
公开(公告)号：EP0097241A3
公开(公告)日：1984-12-05
申请号：EP83104764
申请日：1983-05-14
申请人： ALLIED CORPORATION
发明人： Walling, John Curtis , Shand, Michael Lee
IPC分类号： H01S03/16 , H01S03/06 , H01S03/094 , H01S03/23
CPC分类号： H01S3/025 , H01S3/0606 , H01S3/061 , H01S3/0915 , H01S3/094 , H01S3/1623 , H01S3/164 , H01S3/2308
摘要： A broadly wavelength-tunable laser is provided which comprises as the laser medium a single crystal of YGG:Cr 3- . The laser may be operated over a broad temperature range from cryogenic temperatures to elevated temperatures. Emission is in a spectral range from red to infrared, and the laser is useful in the fields of defense, communications, isotope separation, photochemistry, etc.
摘要翻译：提供宽波长可调谐激光器，其包括作为激光介质的YGG:Cr 3 - 的单晶。激光器可以在从低温到高温的宽温度范围内运行。发射在从红色到红外的光谱范围内，并且激光在防御，通信，同位素分离，光化学等领域是有用的。

8. 发明公开

EP0270381A3 A semiconductor light-emitting apparatus 失效
标题翻译：半导体发光装置
公开(公告)号：EP0270381A3
公开(公告)日：1988-11-09
申请号：EP87310716
申请日：1987-12-04
申请人： SHARP KABUSHIKI KAISHA
发明人： Taneya, Mototaka , Matsumoto, Mitsuhiro , Matsui, Sadayoshi
IPC分类号： H01S03/23 , H01S03/19 , G02B06/10
CPC分类号： H01S5/14 , H01S5/4062
摘要： A semiconductor light-emitting apparatus comprising a semiconductor laser array device (l, lʹ) with a plurality of lasing filaments and a mode-mixing device (2, 2ʹ) with a striped optical waveguide (202, 202ʹ) that attains an optical phase-coupling with the semiconductor laser array device (l, lʹ), whereby beams from the semiconductor laser array device (l, lʹ) are emitted from the light-emitting facet (l30, l30ʹ) of the semiconductor light-emitting apparatus via the mode-mixing device (2, 2ʹ), thereby attaining a near-field pattern with a minimized ripple rate on the optical intensity.

9. 发明公开

EP0237812A3 Semiconductor laser array with a collimated beam 失效
标题翻译：半导体激光阵列与COLLIMATED BEAM
公开(公告)号：EP0237812A3
公开(公告)日：1988-06-29
申请号：EP87102238
申请日：1987-02-17
申请人： Siemens Aktiengesellschaft
发明人： Heinen, Jochen, Dr. Ing. , Hanke, Christian, Dr. Ing.
IPC分类号： H01S03/23 , H01S03/19
CPC分类号： H01S5/125 , H01S5/4031 , H01S5/4087
摘要： Halbleiterlaser-Array, bei dem nur jede zweite (2) der vorhandenen, miteinander optisch verkoppelten laser aktiven Streifen (2, 3) ausstrahlt, so daß nur eine (Haupt-)Strahlungskeule (50) auftritt.
摘要翻译：一种半导体激光器阵列，其具有彼此光学耦合的激光有源条，其中只有每个第二激光激活条发射激光能量，使得出现一个主发射波瓣。

10. 发明公开

EP0187716A3 Semiconductor laser array device 失效
标题翻译：半导体激光阵列器件
公开(公告)号：EP0187716A3
公开(公告)日：1988-06-01
申请号：EP86300098
申请日：1986-01-08
申请人： NEC CORPORATION
发明人： Endo, Kenji c/o NEC Corporation
IPC分类号： H01S03/23 , H01S03/08 , G11B07/125
CPC分类号： G11B7/127 , H01S5/028 , H01S5/2275 , H01S5/4031
摘要： The semiconductor laser array device is made up of closely adjacent writing and reading semiconductor lasers driven independently and including respective stripe shaped active layers (2 and 3). Cleaved facets at the front and rear ends of each active layer (2, 3) confront the front and rear surfaces (4 and 5) respectively of the device. The device further comprises first transparent dielectric films (6 and 9) formed over the entire front and rear surfaces (4 and 5) of the device, a metal film (7) having a high reflectivity and formed on the rear dielectric film (6) to cover the cleaved facet of the active layer (2) on the rear surface of the writing laser, and a further transparent dielectric film (8) formed on the entire rear surface of the semiconductor laser array device to enclose the metal film (7).

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