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1. 发明公开

EP4416771A1 MICRO-LED WITH REFLECTANCE REDISTRIBUTION 审中-实审
公开(公告)号：EP4416771A1
公开(公告)日：2024-08-21
申请号：EP22881775.5
申请日：2022-10-13
申请人： Lumileds LLC
发明人： PFEFFER, Nicola Bettina , VAN DER SIJDE, Arjen Gerben , LOPEZ JULIA, Antonio
IPC分类号： H01L33/46 , H01L33/22 , H01L33/32 , H01L25/075 , H01L33/52
CPC分类号： H01L2933/008320130101 , H01L33/22 , H01L33/60 , H01L33/46 , H01L2933/009120130101 , H01L33/20 , H01L33/54

2. 发明授权

EP3751627B1 SEMICONDUCTOR LIGHT EMITTING DIODES HAVING REFLECTIVE STRUCTURES AND METHODS OF FABRICATING SAME 有权转让
公开(公告)号：EP3751627B1
公开(公告)日：2024-07-24
申请号：EP20174132.9
申请日：2010-02-23
IPC分类号： H01L33/40 , H01L33/38 , H01L33/48 , H01L33/62 , H01L33/46 , H01L33/20 , H01L33/42 , H01L33/22 , H01L33/60
CPC分类号： H01L33/20 , H01L33/22 , H01L33/382 , H01L33/42 , H01L33/46 , H01L33/486 , H01L33/60 , H01L33/62 , H01L2933/006620130101 , H01L2924/000220130101 , H01L33/38 , H01L33/405

3. 发明公开

EP4369425A1 SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR PRODUCING SEMICONDUCTOR LIGHT EMITTING ELEMENT 审中-实审
公开(公告)号：EP4369425A1
公开(公告)日：2024-05-15
申请号：EP22837593.7
申请日：2022-06-30
申请人： KOITO MANUFACTURING CO., LTD.
发明人： KANAOKA, Hiroaki , NOMURA, Akihiro
IPC分类号： H01L33/08 , H01L33/06 , H01L33/10 , H01L33/22 , H01L33/24 , H01L33/32
CPC分类号： H01L33/06 , H01L33/08 , H01L33/32 , H01L33/10 , H01L33/24 , H01L33/22
摘要： A semiconductor light emitting element (10) includes a growth substrate (11), a plurality of columnar semiconductor layers (14 to 16) on the growth substrate (11), and an embedded layer (18) formed to cover the columnar semiconductor layer (14 to 16), in which a side surface reflection portion (17) configured to reflect at least a part of light emitted from the columnar semiconductor layer (14 to 16) is provided on a side surface of the columnar semiconductor layer (14 to 16).

4. 发明公开

EP4362114A1 MULTI-BAND LIGHT EMITTING DIODE 审中-实审
公开(公告)号：EP4362114A1
公开(公告)日：2024-05-01
申请号：EP22833662.4
申请日：2022-06-30
申请人： Seoul Viosys Co., Ltd.
发明人： MIN, Dae Hong , BAEK, Yong Hyun , KANG, Ji Hun
IPC分类号： H01L33/12 , H01L33/32 , H01L33/22 , H01L33/06 , H01L33/02
CPC分类号： H01L33/24 , H01L33/32 , H01L33/12 , H01L33/06
摘要： Provided is a multi-band light emitting diode. A light emitting diode according to one embodiment comprises: a first conductivity-type semiconductor layer; a V-pit generation layer which is located on the first conductivity-type semiconductor layer and has a first V-pit of a first entrance width; a stress relief layer which is located on the V-pit generation layer and provides a second V-pit of a second entrance width on the first V-pit, the second entrance width being greater than the first entrance width of the V-pit; an active layer located on the stress relief layer, the active layer including a first active layer region formed on a planar surface of the stress relief layer and a second active layer region formed in the second V-pit; and a second conductivity-type semiconductor layer disposed on the active layer.

5. 发明公开

EP4256623A1 LIGHT EXTRACTION SUBSTRATE AND ORGANIC LIGHT-EMITTING DEVICE INCLUDING SAME 无效
公开(公告)号：EP4256623A1
公开(公告)日：2023-10-11
申请号：EP21901310.9
申请日：2021-11-30
申请人： Corning Incorporated
发明人： LEE, JooYoung
IPC分类号： H01L33/22 , H01L51/52 , H01L33/00

6. 发明授权

EP3103143B1 LIGHT EMITTING DIODE WITH STRUCTURED SUBSTRATE 有权转让
公开(公告)号：EP3103143B1
公开(公告)日：2023-09-06
申请号：EP15707175.4
申请日：2015-01-16
发明人： LOPEZ, Toni
IPC分类号： H01L33/00 , H01L33/22 , H01L33/20

7. 发明授权

EP2458652B1 Method of making light emitting diodes having vertical topology 有权转让
公开(公告)号：EP2458652B1
公开(公告)日：2023-08-02
申请号：EP12156517.0
申请日：2007-01-26
发明人： Jang, Jun Ho , Choi, Jae Wan , Bae, Duk Kyu , Cho, Hyun Kyong , Park, Jong Kook , Kim, Sun Jung , Lee, Jeong Soo
IPC分类号： H01L33/00 , H01L33/20 , H01L33/22 , H01L33/40

8. 发明公开

EP4187623A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE AND DISPLAY DEVICE USING SEMICONDUCTOR LIGHT-EMITTING DEVICE 审中-实审
公开(公告)号：EP4187623A1
公开(公告)日：2023-05-31
申请号：EP20946378.5
申请日：2020-07-21
申请人： LG ELECTRONICS INC.
发明人： KIM, Jungsub , KIM, Myoungsoo , KWON, Taein , LIM, Chunghyun
IPC分类号： H01L33/42 , H01L33/58 , H01L33/22
摘要： A semiconductor light-emitting device according to the present invention comprises: a first conductive type electrode; a first conductive type semiconductor layer having the first conductive type electrode formed on one surface thereof and an undoped semiconductor layer formed on the other surface thereof; an active layer formed on one surface of the first conductive type semiconductor layer; a second conductive type semiconductor layer formed on the active layer; and a second conductive type electrode formed on the second conductive type semiconductor layer, wherein the undoped semiconductor layer includes a light transmissive layer made of an electrically conductive material and formed at the surface thereof other than the surface where the first conductive type semiconductor layer is formed.

9. 发明公开

EP4184596A1 LIGHT-EMITTING DIODE AND DISPLAY APPARATUS HAVING SAME 审中-实审
公开(公告)号：EP4184596A1
公开(公告)日：2023-05-24
申请号：EP21858596.6
申请日：2021-08-19
申请人： Seoul Viosys Co., Ltd
发明人： OH, Se Hee , WOO, Sang Won , LIM, Wan Tae
IPC分类号： H01L33/10 , H01L33/38 , H01L33/22
摘要： A light emitting diode and a display apparatus having the same are disclosed. The light emitting diode includes a substrate; a light emitting structure disposed on the substrate, and including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer; a transparent electrode disposed on and in ohmic contact with the second conductivity type semiconductor layer; a contact electrode disposed on the first conductivity type semiconductor layer; a current spreader disposed on the transparent electrode; a first insulation reflection layer covering the substrate, the light emitting structure, the transparent electrode, the contact electrode, and the current spreader, having openings exposing portions of the contact electrode and the current spreader, and including a distributed Bragg reflector; a first pad electrode and a second pad electrode disposed on the first insulation reflection layer, and connected to the contact electrode and the current spreader through the openings, respectively; and a second insulation reflection layer disposed under the substrate, and including a distributed Bragg reflector, in which a reflection band of the second insulation reflection layer is narrower than a reflection band of the first insulation reflection layer.

10. 发明公开

EP4177971A1 BONDED SEMICONDUCTOR ELEMENT AND PRODUCTION METHOD FOR BONDED SEMICONDUCTOR ELEMENT 审中-实审
公开(公告)号：EP4177971A1
公开(公告)日：2023-05-10
申请号：EP21834175.8
申请日：2021-06-08
申请人： Shin-Etsu Handotai Co., Ltd.
发明人： ISHIZAKI Junya
IPC分类号： H01L31/18 , H01L33/22 , H01L21/02 , H01L21/338 , H01L29/812
摘要： The present invention is a bonded semiconductor device including an epitaxial layer, and a support substrate made of a material different from that of the epitaxial layer and bonded to the epitaxial layer. Any one of the epitaxial layer and the support substrate has a bonding surface with a radial pattern including recesses or protrusions radially spreading from a certain point on the bonding surface as a center. This makes it possible to provide a bonded semiconductor device capable of suppressing occurrence of delamination and breakage due to temperature increase and decrease.

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