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1. 发明公开

EP4398316A1 SEMICONDUCTOR ELEMENT, ELECTRONIC DEVICE COMPRISING SEMICONDUCTOR ELEMENT AND SEMICONDUCTOR CHIP 审中-公开
公开(公告)号：EP4398316A1
公开(公告)日：2024-07-10
申请号：EP23216357.6
申请日：2023-12-13
申请人： InnoLux Corporation
发明人： HUANG, Wei-Ta , LEE, Tzu-Yi , KUO, Hao-Chung , HUANG, Chun-Hui , HSIEH, Tsau-Hua
IPC分类号： H01L33/00 , H01L33/06 , H01L33/10
CPC分类号： H01L33/06 , H01L33/105 , H01L33/0062
摘要： A semiconductor element (100, 100A, 100B, 100C, 100D) includes a quantum well structure (130). The quantum well structure (130) of the semiconductor element (100, 100A, 100B, 100C, 100D) is disposed between a first type semiconductor layer (110) and a second type semiconductor layer (120), and includes a pair of barrier layers (139) and a first active layer (131) and a second active layer (132) disposed between the pair of barrier layers (139). The first active layer (131) and the second active layer (132) respectively include a group 13 elements of different concentrations. The first reflection unit (140) is disposed under the first type semiconductor layer (110). The second reflection (150) unit is disposed on the second type semiconductor layer (120), and defines a resonant cavity (102) with the first reflection unit (140). The quantum well structure (130) is arranged in the resonant cavity (102).

2. 发明公开

EP4390482A1 SYSTÈME OPTOÉLECTRONIQUE COMPRENANT UN TRANSDUCTEUR ET UN GUIDE D'ONDES 审中-实审
公开(公告)号：EP4390482A1
公开(公告)日：2024-06-26
申请号：EP23219130.4
申请日：2023-12-21
申请人： Commissariat à l'énergie atomique et aux énergies alternatives
发明人： LE MAITRE, Patrick , ROL, Fabian , SIMON, Julia , MICHIT, Nicolas
IPC分类号： G02B6/12 , G02B6/13 , H01L31/0232 , H01L33/06 , G02B6/136 , H01L25/16 , H01L27/15 , H01L31/0352 , H01L33/10 , H01L33/16 , H01L31/105
CPC分类号： G02B6/12004 , H01L33/06 , H01L31/02327 , G02B2006/1212320130101 , G02B2006/1212820130101 , G02B2006/1217620130101 , G02B6/131 , G02B6/136 , H01L27/15 , H01L33/16 , H01L33/10 , H01L25/167 , H01L31/035236 , H01L31/105 , G02B6/43
摘要： Un aspect de l'invention concerne un système optoélectronique (1) comportant un transducteur (11) photoélectrique configuré pour émettre ou recevoir des ondes optiques et un guide d'ondes (12) configuré pour guider les ondes émises par le transducteur (11) ou guider les ondes jusqu'au transducteur (11), le système optoélectronique (1) comportant un empilement comprenant successivement :
- une première couche (111) poreuse de matériau semi-conducteur dopé selon un premier type de dopage,
- une deuxième couche (112) de matériau semi-conducteur dopé selon le premier type de dopage et faiblement dopé par rapport au matériau semi-conducteur de la première couche (111),
- une zone (113) comprenant des puits quantiques,
- une troisième couche (116) de matériau semi-conducteur dopé selon un deuxième type de dopage opposé au premier type,

le transducteur (11) photoélectrique comprenant une première portion (111a) de la première couche (111) poreuse, une première portion (112a) de la deuxième couche (112), au moins une première portion (113a) de la zone comprenant le ou les puits quantiques et au moins une première portion (116a) de la troisième couche (116) ;
le guide d'ondes (12) comprenant une deuxième portion (112b) de la deuxième couche (112) adjacente à la première portion (112a) et disposée sur une deuxième portion (111b) de la première couche (111) poreuse.

3. 发明公开

EP4369426A1 SEMICONDUCTOR LIGHT-EMITTING ELEMENT, VEHICLE LAMP, AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING ELEMENT 审中-实审
公开(公告)号：EP4369426A1
公开(公告)日：2024-05-15
申请号：EP22837594.5
申请日：2022-06-30
申请人： KOITO MANUFACTURING CO., LTD.
发明人： KANAOKA, Hiroaki , NOMURA, Akihiro
IPC分类号： H01L33/10 , H01L33/08 , H01L33/32 , H01L33/38
CPC分类号： H01L33/38 , H01L33/08 , H01L33/32 , H01L33/10
摘要： A semiconductor light-emitting element includes: a growth substrate (11); a plurality of columnar semiconductor layers (13, 14) formed on the growth substrate (11); and an embedded layer (16) with which the plurality of columnar semiconductor layers (13, 14) are covered, in which each of the plurality of columnar semiconductor layers (13, 14) includes an n-type nanowire layer (13) at a center of each of the plurality of columnar semiconductor layers (13, 14) and an active layer (14) on an outer periphery side of the n-type nanowire layer (13), and a gap (17) is provided between the embedded layer (16) between the columnar semiconductor layer (13, 14) and the columnar semiconductor layer (13, 14), and the growth substrate (11).

4. 发明授权

EP3716346B1 CHIP SCALE PACKAGE LIGHT EMITTING DIODE 有权转让
公开(公告)号：EP3716346B1
公开(公告)日：2023-11-08
申请号：EP18890348.8
申请日：2018-12-10
发明人： KIM, Jong Kyu , KANG, Min Woo , OH, Se Hee , LIM, Hyoung Jin
IPC分类号： H01L33/48 , H01L33/62 , H01L33/10 , H01L33/42 , H01L33/38 , H01L33/40

5. 发明授权

EP3648164B1 DISPLAY DEVICE USING SEMICONDUCTOR LIGHT EMITTING ELEMENT 有权
公开(公告)号：EP3648164B1
公开(公告)日：2023-08-30
申请号：EP17915818.3
申请日：2017-07-04
发明人： CHANG, Younghak
IPC分类号： H01L27/15 , H01L33/08 , H01L33/10 , H01L33/38 , H01L33/46

6. 发明授权

EP3483944B1 LIGHT EMITTING DEVICE PACKAGE AND LIGHTING APPARATUS COMPRISING SAME 有权转让
公开(公告)号：EP3483944B1
公开(公告)日：2023-07-19
申请号：EP17892069.0
申请日：2017-09-29
发明人： KIM, Ki Seok , KIM, Won Jung , SONG, June O , LIM, Chang Man
IPC分类号： H01L33/48 , H01L33/20 , H01L33/10 , H01L33/50 , H01L33/52 , H01L33/00 , F21K9/00 , H01L33/60 , H01L33/62 , H01L33/54 , H01L33/38

7. 发明公开

EP4207321A1 UNIT PIXEL HAVING LIGHT-EMITTING ELEMENTS, AND DISPLAY APPARATUS 审中-实审
公开(公告)号：EP4207321A1
公开(公告)日：2023-07-05
申请号：EP21867179.0
申请日：2021-09-10
申请人： Seoul Viosys Co., Ltd.
发明人： CHA, Namgoo , KIM, Sang Min , PARK, Yeonkyu
IPC分类号： H01L33/48 , H01L33/60 , H01L33/44 , H01L33/36 , H01L33/10 , H01L33/22 , H01L25/075 , H01L27/15
摘要： A unit pixel according to an embodiment of the present disclosure comprises: a transparent substrate having an upper surface and a lower surface; a plurality of light-emitting elements aligned on the upper portion of the upper surface of the transparent substrate; and a reflector arranged between the plurality of light-emitting elements and the transparent substrate, wherein light emitted by the plurality of light-emitting elements is emitted to the outside through the upper and lower surfaces of the transparent substrate, and the reflector is configured to reflect light travelling to the upper surface of the transparent substrate from the internal portion of the transparent substrate.

8. 发明公开

EP4088325A1 ENHANCED COLOUR CONVERSION 审中-公开
公开(公告)号：EP4088325A1
公开(公告)日：2022-11-16
申请号：EP21706364.3
申请日：2021-02-09
申请人： Plessey Semiconductors Limited
发明人： PINOS, Andrea , MEZOUARI, Samir
IPC分类号： H01L33/00 , H01L33/10 , H01L33/46 , H01L33/50 , H01L33/22 , H01L33/08

9. 发明公开

EP4088317A1 MULTICOLOUR LIGHT EMITTING STRUCTURE 审中-公开
公开(公告)号：EP4088317A1
公开(公告)日：2022-11-16
申请号：EP21706662.0
申请日：2021-02-09
申请人： Plessey Semiconductors Limited
发明人： MEZOUARI, Samir , PINOS, Andrea
IPC分类号： H01L25/075 , H01L33/00 , H01L33/10 , H01L33/46 , H01L33/16 , H01L33/08 , H01L33/32 , H01L33/42

10. 发明公开

EP4044262A1 WAVELENGTH DOWN-CONVERSION-BASED µLED LIGHT-EMITTING DEVICE WITHOUT ELECTRICAL CONTACT 审中-公开
公开(公告)号：EP4044262A1
公开(公告)日：2022-08-17
申请号：EP20876250.0
申请日：2020-08-31
申请人： Fu Zhou University , Mindu Innovation Lab
发明人： ZHANG, Yongai , WENG, Xuyang , GUO, Tailiang , ZHOU, Xiongtu , WU, Chaoxing , LIN, Zhixian , SUN, Lei , YAN, Qun
IPC分类号： H01L33/06 , H01L33/10 , H01L33/38
摘要： The present invention relates to an electrical contact-free µLED light emitting device based on a wavelength down-conversion. The electrical contact-free µLED light emitting device comprises a µLED crystal grain, wavelength down-conversion light emitting layers, an upper driving electrode and a lower driving electrode, insulators, an optical micro-structure and a control module. The upper driving electrode and the lower driving electrode are free from direct electrical contact with the µLED crystal grains, the control module is electrically connected with the upper driving electrode and the lower driving electrode respectively to provide alternating driving signals to the upper driving electrode and the lower driving electrode so as to form a driving electric field, and the driving electric field controls an electron-hole recombination of the µLED crystal grain and emits a first light source which is converted into a second light source via the wavelength down-conversion light emitting layer. As a driving electrode in the electrical contact-free µLED light emitting device based on the wavelength down-conversion provided by the present invention is free from electrical contact with a p-type semiconductor layer and an n-type semiconductor layer in the µLED crystal grain, there are no complicated manufacturing process of a chip in the µLED light emitting device and bonding and mass transfer processes of the µLED chip and a driving chip, so that the production cycle of the µLED light emitting device is shortened effectively and the manufacturing cost of the µLED light emitting device is reduced effectively.

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