基本信息:
- 专利标题： MULTI-BAND LIGHT EMITTING DIODE
- 申请号：EP22833662.4 申请日：2022-06-30
- 公开(公告)号：EP4362114A1 公开(公告)日：2024-05-01
- 发明人： MIN, Dae Hong , BAEK, Yong Hyun , KANG, Ji Hun
- 申请人： Seoul Viosys Co., Ltd.
- 申请人地址： KR Ansan-si, Gyeonggi-do 15429 65-16, Sandan-ro 163 beon-gil Danwon-gu
- 专利权人： Seoul Viosys Co., Ltd.
- 当前专利权人： Seoul Viosys Co., Ltd.
- 当前专利权人地址： KR Ansan-si, Gyeonggi-do 15429 65-16, Sandan-ro 163 beon-gil Danwon-gu
- 代理机构： Isarpatent
- 优先权： US 202163216910 P 2021.06.30
- 国际申请： KR2022009412 2022.06.30
- 国际公布： WO2023277608 2023.01.05
- 主分类号： H01L33/12
- IPC分类号： H01L33/12 ; H01L33/32 ; H01L33/22 ; H01L33/06 ; H01L33/02
摘要：
Provided is a multi-band light emitting diode. A light emitting diode according to one embodiment comprises: a first conductivity-type semiconductor layer; a V-pit generation layer which is located on the first conductivity-type semiconductor layer and has a first V-pit of a first entrance width; a stress relief layer which is located on the V-pit generation layer and provides a second V-pit of a second entrance width on the first V-pit, the second entrance width being greater than the first entrance width of the V-pit; an active layer located on the stress relief layer, the active layer including a first active layer region formed on a planar surface of the stress relief layer and a second active layer region formed in the second V-pit; and a second conductivity-type semiconductor layer disposed on the active layer.