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1. 发明公开

EP4379802A1 DISPLAY MODULE AND DISPLAY APPARATUS INCLUDING SAME 审中-公开
公开(公告)号：EP4379802A1
公开(公告)日：2024-06-05
申请号：EP22901502.9
申请日：2022-08-17
申请人： Samsung Electronics Co., Ltd.
发明人： OH, Kihun , JUNG, Gwanghyun , CHO, Yonghee
IPC分类号： H01L27/12 , H01L33/38 , H01L33/62
CPC分类号： H01L33/38 , H01L33/62 , H01L27/12
摘要： A display is provided. The display includes a first substrate comprising a plurality of electrode pads disposed on a front surface, a plurality of solder members disposed on a rear surface, and a plurality of wiring members electrically connecting the plurality of electrode pads and the plurality of solder members, respectively, a plurality of light-emitting elements electrically connected to each of the plurality of electrode pads, and constituting pixels of two columns, and a second substrate comprising a thin film transistor (TFT) layer disposed on a rear side of the first substrate and electrically connected to the plurality of solder members to control driving of the plurality of light-emitting elements, and the first substrate may include a first region in which pixels of a first column are disposed, a second region in which pixels of a second column are disposed, and a third region disposed between the first region and the second region, the plurality of wiring members may be disposed on the first region and the second region among the front surface of the first substrate.

2. 发明公开

EP4297105A3 CHIP SCALE PACKAGE LIGHT EMITTING DIODE 审中-公开
公开(公告)号：EP4297105A3
公开(公告)日：2024-04-24
申请号：EP23208095.2
申请日：2018-12-10
申请人： Seoul Viosys Co., Ltd.
发明人： KIM, Jong Kyu , KANG, Min Woo , OH, Se Hee , LIM, Hyoung Jin
IPC分类号： H01L33/48 , H01L33/62 , H01L33/10 , H01L33/42 , H01L33/38 , H01L33/40
CPC分类号： H01L33/10 , H01L33/42 , H01L33/62 , H01L33/382 , H01L33/486 , H01L33/405 , H01L33/385 , H01L33/387
摘要： A light emitting diode module, comprising a printed circuit board (1023), and a light emitting diode (1021) disposed on the substrate, the light emitting diode including a substrate (21), a first conductivity type semiconductor layer (23), a mesa (M) disposed on the first conductivity type semiconductor layer (23), and including an active layer (25) and a second conductivity type semiconductor layer (27), an ohmic contact layer (28) disposed on the mesa (M) and electrically connected to the second conductivity type semiconductor layer (27), a lower insulation layer (33) covering the mesa (M), and including at least one first opening (33a1) exposing the first conductivity type semiconductor layer (23) and a second opening (33a2), a first pad metal layer (35a) disposed on the lower insulation layer (33), and electrically connected to the first conductivity type semiconductor layer (23) through the at least one first opening (33a1), a second pad metal layer (35b) disposed on the lower insulation layer (33), and electrically connected to the ohmic contact layer (28) through the second opening (33a2), a upper insulation layer (37) covering the first and second pad metal layers (35a, 35b) and including first opening (37a) exposing the first pad metal layer (35a) and a second opening (37b) exposing the second pad metal layer (35b), a first bump pad (39a) disposed on the upper insulation (37), and electrically connected to the first pad metal layer (35a) through the first opening (37a) of the upper insulation layer(37), and a second bump pad (39b) disposed on the upper insulation (37), and electrically connected to the second pad metal layer (35b) through the second opening (37b) of the upper insulation layer(37), wherein the first pad metal layer (35a) includes a protrusion having an outer contact portion (35a1) that contacts the first conductivity type semiconductor layer (23) near the edge of the substrate (21), and wherein the first pad metal layer (35a) includes a region that has a wide width and a region that has a narrow width extending from thereof.

4. 发明公开

EP4336575A1 LIGHT-EMITTING ELEMENT AND DISPLAY DEVICE INCLUDING THE SAME 审中-公开
公开(公告)号：EP4336575A1
公开(公告)日：2024-03-13
申请号：EP23188789.4
申请日：2023-07-31
申请人： Samsung Display Co., Ltd.
发明人： HAM, Ji Hyun , AN, Moon Jung , PARK, Jin Seok , LEE, Hee Keun , JO, Sung Chan , HAN, Sang Wook
IPC分类号： H01L33/38 , H01L33/40 , H01L33/46
摘要： A light-emitting element includes a first semiconductor layer, a light-emitting layer disposed on the first semiconductor layer, a second semiconductor layer disposed on the light-emitting layer, a device electrode layer disposed on the second semiconductor layer, a reflective electrode layer disposed on the device electrode layer, an insulating film surrounding a side surface of the light-emitting layer, a side surface of the second semiconductor layer, and a side surface of the device electrode layer, and a reflective layer surrounding a side surface of the insulating film, wherein the side surface of the device electrode layer is aligned with a side surface of the reflective electrode layer.

5. 发明公开

EP4270497A2 SEMICONDUCTOR LIGHT-EMITTING ELEMENT 审中-公开
公开(公告)号：EP4270497A2
公开(公告)日：2023-11-01
申请号：EP23169662.6
申请日：2023-04-25
申请人： Nichia Corporation
发明人： HOSOKAWA, Yasunobu , OTSUKA, Takumi
IPC分类号： H01L33/38 , H01L33/64 , H01L33/32 , H01L33/24
摘要： A semiconductor light-emitting element includes a semiconductor structure including an n-side semiconductor layer including a first region, a second region located on an outer periphery of the first region, and a plurality of third regions surrounded by the first region in a plan view, a light-emitting layer disposed on the first region, and a p-side semiconductor layer disposed on the light-emitting layer; a first insulating film disposed on the semiconductor structure and defining a plurality of first openings, each located above a corresponding one of the plurality of third regions and a plurality of second openings located above the p-side semiconductor layer; an n-side electrode disposed on the first insulating film and electrically connected to the n-side semiconductor layer through the plurality of first openings; at least one n-pad electrode disposed in the second region and electrically connected to the n-side electrode; a second insulating film disposed on the first insulating film and defining a plurality of third openings, each located at a position overlapping a corresponding one of the plurality of second openings; and a p-pad electrode disposed on the second insulating film and electrically connected to the p-side semiconductor layer through the plurality of third openings. The p-pad electrode covers the first region and the plurality of third regions in a plan view. Two or more of the plurality of first openings are located around a corresponding one of the plurality of third openings in a plan view.

6. 发明公开

EP4235826A3 INTERCONNECTS FOR LIGHT EMITTING DIODE CHIPS 审中-公开
公开(公告)号：EP4235826A3
公开(公告)日：2023-11-01
申请号：EP23179165.8
申请日：2019-11-01
申请人： Creeled, Inc.
发明人： CHECK, Michael
IPC分类号： H01L33/38 , H01L33/32 , H01L33/40 , H01L33/44 , H01L33/62
摘要： A light emitting diode (LED) chip (10), comprises an active LED structure (12) comprising an n-type layer (16), a p-type layer (14), and an active layer (18) arranged between the n-type layer (16) and the p-type layer (14). A plurality of n-contact interconnects (44) is electrically connected to the n-type layer (16). A reflective layer (26) is on the p-type layer (14). A plurality of reflective layer interconnects (30a, 30b, 30c) within the reflective layer are electrically connected to the p-type layer (14), the plurality of reflective layer interconnects (30a, 30b, 30c) comprising first reflective layer interconnects with a first diameter and second reflective layer interconnects with a second diameter that is smaller than the first diameter. The first reflective layer interconnects are arranged closer to n-contact interconnects of the plurality of n-contact interconnects (44) than the second reflective layer interconnects. The plurality of n-contact interconnects and the plurality of reflective layer interconnects (30a, 30b, 30c) collectively form a symmetric pattern across an area of the LED chip.

7. 发明公开

EP4243095A1 LIGHT-EMITTING DIODE AND DISPLAY DEVICE COMPRISING SAME 审中-公开
公开(公告)号：EP4243095A1
公开(公告)日：2023-09-13
申请号：EP20960885.0
申请日：2020-11-06
申请人： LG Electronics Inc.
发明人： HWANG, Sunghyun , HEO, Mihee , JEON, Kiseong
IPC分类号： H01L33/14 , H01L33/38 , H01L33/40 , H01L25/075
摘要： A light emitting device includes a first conductivity-type semiconductor layer, an active layer on the first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer on the active layer, a first electrode on the first conductivity-type semiconductor layer, a second electrode on the second conductivity-type semiconductor layer, and a diffusion layer between the first electrode and the first conductivity-type semiconductor layer.
The first electrode includes a plurality of layers, and at least one layer of the plurality of layers includes a magnetic material. The diffusion layer includes a magnetic material, and a thickness of the diffusion layer is 100 nm or less.

8. 发明授权

EP3758079B1 LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
公开(公告)号：EP3758079B1
公开(公告)日：2023-08-09
申请号：EP20184463.6
申请日：2016-03-31
发明人： BAIKE, Ikuko , SUZUKI, Ryo
IPC分类号： H01L33/60 , H01L33/52 , H01L33/20 , H01L33/38 , H01L33/50

9. 发明公开

EP4187597A1 LIGHT-EMITTING DIODE HAVING PLURALITY OF LIGHT-EMITTING CELLS 审中-公开
公开(公告)号：EP4187597A1
公开(公告)日：2023-05-31
申请号：EP21853239.8
申请日：2021-08-09
申请人： Seoul Viosys Co., Ltd.
发明人： OH, Se Hee , LIM, Wan Tae , WOO, Sang Won
IPC分类号： H01L25/075 , H01L33/10 , H01L33/62 , H01L33/38 , H01L33/40
摘要： A light emitting diode having a plurality of light emitting cells is provided. A light emitting diode according to an embodiment includes a reflection metal layer covering a region between light emitting cells, in which the reflection metal layer is disposed between connectors electrically connecting adjacent light emitting cells, and electrically insulated from a bump pad.

10. 发明公开

EP4184597A1 DEEP ULTRAVIOLET LIGHT-EMITTING DIODE 审中-公开
公开(公告)号：EP4184597A1
公开(公告)日：2023-05-24
申请号：EP21843385.2
申请日：2021-07-16
申请人： Seoul Viosys Co., Ltd.
发明人： KIM, Tae Gyun , KWAK, June Sik , LEE, Kyu Ho
IPC分类号： H01L33/38 , H01L33/04 , H01L33/32 , H01L33/40
摘要： A deep ultraviolet light-emitting diode is provided. A deep ultraviolet light-emitting diode according to one embodiment comprises: a substrate; an n-type semiconductor layer positioned on the substrate; a mesa which is disposed on the n-type semiconductor layer, comprises an active layer and a p-type semiconductor layer, and has a plurality of via-holes exposing the n-type semiconductor layer; n-ohmic contact layers contacting the n-type semiconductor layer in the via-holes; a p-ohmic contact layer contacting the p-type semiconductor layer; an n-pad metal layer electrically connected to the n-ohmic contact layers; a p-pad metal layer electrically connected to the p-ohmic contact layer; an n-bump electrically connected to the n-pad metal layer; and a p-bump electrically connected to the p-pad metal layer, wherein the p-pad metal layer is formed so as to surround the n-pad metal layer.

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