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    • 6. 发明公开
    • Organic magnetic film and method of manufacturing the same
    • Organistcher magnetischer Film und Verfahren zur Herstellung desselben。
    • EP0561279A1
    • 1993-09-22
    • EP93103954.9
    • 1993-03-11
    • MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
    • Ohtake, TadashiMino, NorihisaOgawa, Kazufumi
    • B32B7/00B05D1/38H01F10/00
    • B82Y30/00B05D1/185B82Y10/00B82Y40/00G11B5/62H01F1/0009H01F1/42H01F10/005Y10S428/90
    • According to the invention, the surface of a substrate possessing an active hydrogen group is contacted with a chemical adsorbent containing a radical generation precursor group or metal ion capturing group within a molecule - also possessing a reactive functional group such as halosilyl or alkoxy silyl at its end - to form a chemical adsorption film by removing the unreacted chemical adsorbent. Radicals are then generated or magnetism is expressed on the chemical adsorption film. For example, when the diazo group on the film surface is irradiated with ultraviolet rays and transformed into carbene, an organic magnetic chemical adsorption monomolecular film is obtained. It may also be possible to form such a film by contacting the chemically absorbed film with a chemical adsorbent possessing the reactive functional group at its end, so that organic molecules possessing unpaired electrons derived from a metal or radical are oriented, forming a magnetic organic film.
    • 根据本发明,具有活性氢基团的基底的表面在分子内与含有自由基产生前体基团或金属离子捕获基团的化学吸附剂接触 - 在其分子中也具有反应性官能团如卤代甲硅烷基或烷氧基甲硅烷基 通过除去未反应的化学吸附剂形成化学吸附膜。 然后产生自由基,或在化学吸附膜上表现磁性。 例如,当将膜表面上的重氮基团用紫外线照射并转化成卡宾时,得到有机磁性化学吸附单分子膜。 也可以通过使化学吸收的膜与其末端具有反应性官能团的化学吸附剂接触而形成这种膜,使得具有衍生自金属或自由基的不成对电子的有机分子取向,形成磁性有机膜 。
    • 9. 发明公开
    • HALF-METALLIC ANTIFERROMAGNETIC MATERIAL
    • 抗血栓形成药物
    • EP2267734A1
    • 2010-12-29
    • EP09721940.6
    • 2009-03-18
    • Osaka University
    • AKAI, HisazumiOGURA, MasakoNGUYEN, Long Hoang
    • H01F1/40H01L29/82
    • H01F1/408H01F1/0009
    • A half-metallic antiferromagnetic material that is chemically stable and has a stable magnetic structure is provided.
      A half-metallic antiferromagnetic material according to the present invention is a compound that has a crystal structure of a nickel arsenic type, a zinc blende type, a wurtzite type, a chalcopyrite type or a rock salt type and is constituted of two or more magnetic elements and a chalocogen or a pnictogen. The two or more magnetic elements contain a magnetic element having fewer than 5 effective d electrons and a magnetic element having more than 5 effective d electrons, and a total number of effective d electrons of the two or more magnetic elements is 10 or a value close to 10.
    • 提供化学稳定且具有稳定磁性结构的半金属反铁磁性材料。 根据本发明的半金属反铁磁材料是具有镍砷型,闪锌矿型,纤锌矿型,黄铜矿型或岩盐型的晶体结构的化合物,并且由两种或更多种磁性 元素和致汗细胞或pnictogen。 两个或多个磁性元件包含具有少于5个有效d电子的磁性元件和具有多于5个有效d电子的磁性元件,并且两个或更多个磁性元件的有效d电子的总数为10或接近 到10。