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1. 发明公开

EP1428245A4 MONOLITHIC THREE-DIMENSIONAL STRUCTURES 审中-公开
标题翻译：整体式三维结构
公开(公告)号：EP1428245A4
公开(公告)日：2005-11-16
申请号：EP02747946
申请日：2002-07-15
申请人： BINOPTICS CORP
发明人： BEHFAR ALEX , SCHREMER ALFRED T , STAGARESCU CRISTIAN B
IPC分类号： G03F7/20 , B81C1/00 , G02B6/12 , G02B6/13 , G02B6/42 , G03F7/00 , G03F7/09 , G03F7/095 , G03F7/11 , H01L21/027
CPC分类号： G02B6/12002 , B81B2201/047 , B81C99/008 , B81C2201/0159 , G02B6/13 , G02B6/4204 , G02B6/4249 , G03F7/0037 , Y10S438/948 , Y10S438/949 , Y10S438/95
摘要： Three-dimensional structures of arbitrary shape are fabricated on the surface of a substrate (10) through a series of processing steps wherein a monolithic structure is fabricated in successive layers. A first layer (14) of photoresist material is spun onto a substrate (10) surface (18) and is exposed (26) in a desired pattern corresponding to the shape of a final structure, at a corresponding cross-sectional level in the structure. The layer is not developed after exposure; instead, a second layer (30) of photoresist material is deposited and is also exposed (32) in a desired pattern. Subsequent layers (40,52,64) spun onto the top surface of prior layers (14,30) and exposed (44,54,66), and upon completion of the succession of layers each defining corresponding levels of the desired structure, the layers are all developed at the same time leaving the three-dimensional structure (22).

2. 发明授权

EP1335418B1 Method of fabricating a T-shaped electrode 有权
标题翻译： Verfahren zur Herstellung einer T-förmigenElektrode
公开(公告)号：EP1335418B1
公开(公告)日：2005-09-07
申请号：EP02001998.0
申请日：2002-02-05
申请人： Maile, Bernd E., Dr.
发明人： Maile, Bernd E., Dr.
IPC分类号： H01L21/027 , H01L21/28 , H01L29/423
CPC分类号： H01L21/28114 , H01L21/0272 , H01L21/28587 , H01L29/42376 , Y10S438/945 , Y10S438/948 , Y10S438/951

3. 发明公开

EP1446841A1 A METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE 有权
标题翻译：一种制造半导体器件的方法
公开(公告)号：EP1446841A1
公开(公告)日：2004-08-18
申请号：EP02779855.2
申请日：2002-10-07
申请人： Eblana Photonics Limited
发明人： O'GORMAN, James
IPC分类号： H01L33/00 , H01S5/22
CPC分类号： H01L23/544 , G02B6/4224 , H01L2223/54453 , H01L2924/0002 , H01S5/0202 , Y10S438/942 , Y10S438/945 , Y10S438/946 , Y10S438/948 , Y10S438/975 , H01L2924/00
摘要： This invention generally relates to semiconductor devices, for example lasers and more particularly to single frequency lasers and is directed at overcoming problems associated with the manufacture of these devices. In particular, a laser device is provided formed on a substrate having a plurality of layers (1,2,3,4,5), the laser device comprising at least one waveguide (for example a ridge) established by the selective removal of sections of at least one of the layers. Wherein alignment features are provided on the device to facilitate subsequent placement.
摘要翻译：本发明一般涉及半导体器件，例如激光器，更具体地涉及单频激光器，并且涉及克服与这些器件的制造相关的问题。特别是，在具有多个层（1,2,3,4,5）的基板上形成激光装置，激光装置包括至少一个波导（例如脊），该波导通过选择性去除部分的至少一个层。其中在设备上提供对齐特征以便于随后的放置。

4. 发明公开

EP1341991A2 LASER SEPARATED DIE WITH TAPERED SIDEWALLS FOR IMPROVED LIGHT EXTRACTION 审中-公开
标题翻译： BY激光器芯片分离了具有FOR LIGHT降的改进锥形侧壁
公开(公告)号：EP1341991A2
公开(公告)日：2003-09-10
申请号：EP01987030.2
申请日：2001-11-16
申请人： Emcore Corporation
发明人： ELIASHEVICH, Ivan , GOTTFRIED, Mark
IPC分类号： F01L1/00
CPC分类号： H01L33/20 , B23K26/073 , B23K26/40 , B23K2201/40 , B23K2203/50 , H01L21/78 , H01L33/0095 , H01L2224/05568 , H01L2224/05573 , H01L2224/0558 , H01L2224/11 , H01L2924/10158 , Y10S438/948 , H01L2224/05644 , H01L2924/00014 , H01L2224/05666
摘要： A method for separating individual optoelectronic devices, such as LEDs, from a wafer includes directing a laser beam (256) having a width toward a major surface of the semiconductor wafer. The laser beam has an image with a first portion of a first energy per unit width and a second portion of a second energy per unit width less than the first energy. The laser beam image (266) cuts into the first major surface of the semiconductor wafer to produce individual devices.

5. 发明公开

EP0846984A3 Prebaking process for facilitating removal of positive photoresist with stripping solutions 失效
标题翻译：热处理工艺，以便去除与Entschichtungslösungen正性光刻胶的
公开(公告)号：EP0846984A3
公开(公告)日：2000-03-22
申请号：EP97121197.4
申请日：1988-07-20
申请人： EKC TECHNOLOGY, INC.
发明人： Lee, Wai Mun
IPC分类号： G03F7/38 , G03F7/42
CPC分类号： G03F7/425 , Y10S438/948
摘要： A process for stripping a positive organic photoresist from a substrate, which comprises prebaking the positive organic photoresist at a temperature in the range of from 150 to 220°C for a period of time of from 15 minutes to 30 minutes, then contacting the positive organic photoresist with a liquid photoresist stripper for the positive organic photoresist for a time sufficient to remove the positive organic photoresist from the substrate.
摘要翻译：用于从基板，彩色去除阳性有机光阻甲剥离组合物：如半导体晶片，含有三胺，二乙烯三胺：如，和非极性或极性有机溶剂，：例如N-甲基吡咯烷酮。这种组合物将半导体晶片通过所述正性光刻胶除去正性光刻胶，即使在离子注入之后进入晶片。将晶片浸在组合物中，例如，在110℃下进行5分钟的焙烧，在超声浴中重离子注入剂量通过光致抗蚀剂，：如1×10 <1> <6>离子/ cm <后 2>，为完全去除光致抗蚀剂的。在介于约150和220℃下进行约15分钟至约30分钟的时间的温度下预烘烤光致抗蚀剂之前，与三胺汽提正有机光致抗蚀剂层，以提高去除。

6. 发明公开

EP0800664A1 METAL ION REDUCTION IN NOVOLAK RESIN USING AN ION EXCHANGE RESIN IN A POLAR SOLVENT AND PHOTORESISTS COMPOSITIONS THEREFROM 有权转让
标题翻译：在极性溶剂中金属离子含量在线型酚醛树脂，离子交换树脂的减少，以及光阻与这些线型酚醛树脂组合物
公开(公告)号：EP0800664A1
公开(公告)日：1997-10-15
申请号：EP95944205.0
申请日：1995-12-21
申请人： HOECHST CELANESE CORPORATION
发明人： RAHMAN, M., Dalil , AUBIN, Daniel, P. , KHANNA, Dinesh, N. , MCKENZIE, Douglas
IPC分类号： G03F7 , C08G8 , H01L21
CPC分类号： C08G8/04 , G03F7/004 , Y10S430/106 , Y10S438/948
摘要： The present invention provides methods for producing water insoluble, aqueous alkali soluble, film forming novolak resins having an extremely low level of metal ions, utilizing treated anion and cation exchange resins. A method is also provided for producing photoresist composition having a very low level of metal ions from such novolak resin and for producing semiconductor devices using such photoresist compositions.

7. 发明公开

EP0718877A3 Method of manufacturing a MESFET 失效
标题翻译：赫尔斯特朗·赫斯特伦
公开(公告)号：EP0718877A3
公开(公告)日：1997-01-15
申请号：EP95120152.4
申请日：1995-12-20
申请人： MURATA MANUFACTURING CO., LTD.
发明人： Yoshida, Kazuhiro
IPC分类号： H01L21/338 , H01L21/285
CPC分类号： H01L29/66863 , H01L21/0272 , H01L21/28587 , Y10S148/10 , Y10S438/948
摘要： A semiconductor device manufacturing method with which a GaAs MESFET and an integrated circuit using the same can be manufactured cheaply and with high yield by accurately forming a mushroom-shaped gate electrode with inexpensive equipment and a short process. The method includes the steps of: depositing a first mask layer 16 on a semiconductor substrate; forming an opening 16a in the first mask layer 16; causing the first mask layer 16 to flow by heat-treating the semiconductor substrate; depositing a second mask layer 17 on the first mask layer; forming in the second mask layer 17 an opening 17a larger than the opening 16a in the first mask layer 16 and exposing the opening 16a in the first mask layer 16; and forming a gate electrode 19 in the opening 17a in the second mask layer 17.
摘要翻译：可以通过以便宜的设备和短的工艺精确地形成蘑菇状栅电极，能够廉价地制造GaAs MESFET和使用该GaAs MESFET的集成电路的半导体器件制造方法。该方法包括以下步骤：在半导体衬底上沉积第一掩模层16; 在第一掩模层16中形成开口16a; 通过热处理半导体衬底使第一掩模层16流动; 在第一掩模层上沉积第二掩模层17; 在第二掩模层17中形成大于第一掩模层16中的开口16a的开口17a，并暴露第一掩模层16中的开口16a; 并在第二掩模层17的开口17a中形成栅电极19

8. 发明公开

EP0497644A1 Procédé de lithogravure sur substrat semi-conducteur, notamment pour le traitement localisé sur saillie 失效转让
标题翻译：为半导体衬底，特别是用于一个突出部的局部治疗的光刻过程。
公开(公告)号：EP0497644A1
公开(公告)日：1992-08-05
申请号：EP92400105.0
申请日：1992-01-15
申请人： ALCATEL N.V.
发明人： Poingt, Francis , Lievin, Jean-Louis , Gaumont-Goarin, Elisabeth
IPC分类号： H01L21/3105 , H01L21/027 , G03F7/40 , H01L21/60
CPC分类号： H01L21/0274 , G03F7/40 , H01L21/31058 , Y10S438/94 , Y10S438/948
摘要： Procédé de traitement localisé sur saillie, notamment de lithogravure sur substrat semiconducteur
Selon ce procédé on amène une résine de protection (108) utilisée pour la lithogravure à fluer sous l'effet de sa tension superficielle pour accroître son épaisseur autour d'une saillie (106) sur laquelle une fenêtre (114) doit être formée.
L'invention s'applique notamment à la fabrication des lasers semiconducteurs
摘要翻译：工艺局部治疗的突起，特别是用于在半导体衬底的光刻。 ... 。根据此过程用于光刻保护树脂（108）是由它的表面张力的作用下流动，以增加周围的突起（106）在其上的窗口（114）是它的厚度形成。 ... 在本发明中特别适用于半导体激光器的制造。 ... ...

9. 发明授权

EP0291670B1 Vapor phase photoresist silylation process 失效
标题翻译：蒸气相色谱硅烷化方法
公开(公告)号：EP0291670B1
公开(公告)日：1991-02-20
申请号：EP88105081.9
申请日：1988-03-29
申请人： International Business Machines Corporation
发明人： Holmes, Steven J.
IPC分类号： G03F7/38 , G03F7/075
CPC分类号： G03F7/0755 , G03F7/038 , G03F7/265 , G03F7/405 , Y10S438/948

10. 发明公开

EP0251447A3 Process for manufacturing a semiconductor device using a mask, and resist material therefor 无效
标题翻译：使用掩模制造半导体器件的工艺及其材料
公开(公告)号：EP0251447A3
公开(公告)日：1990-04-04
申请号：EP87303876.4
申请日：1987-04-30
申请人： FUJITSU LIMITED
发明人： Fujimura, Shuzo , Yano, Hiroshi
IPC分类号： H01L21/312 , G03C1/72
CPC分类号： G03F7/022 , H01L21/2652 , H01L21/28273 , H01L21/31138 , H01L21/312 , Y10S438/948
摘要： In the manufacture of a semiconductor device, the dry etching of a resist layer of an organic material can be utilized without decreasing the yield of the semi-conductor layer, by using a resist layer of an organic material containing heavy metals in an amount of less than 20 ppb for each heavy metal.

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