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    • 1. 发明公开
    • PLASMA POLYMERIZED ELECTRON BEAM RESIST
    • Nachbehandlung eines belichteten Plasma-polymerisierten Resistsfürdie Elektronenstrahllitgraph
    • EP1521997A2
    • 2005-04-13
    • EP03707949.8
    • 2003-03-10
    • Quantiscript Inc.
    • AWAD, YousefLAVALLEE, EricBEAUVAIS, JacquesDROUIN, Dominique
    • G03F7/004G03F7/38
    • G03F1/78G03F7/0046G03F7/038G03F7/38H01L21/0277H01L21/31138Y10S438/948Y10S438/95
    • A process for producing a pattern of negative electron beam resist comprises: depositing a layer of plasma polymerized fluoropolymer on a face of a substrate, the plasma polymerized fluoropolymer forming the negative electron beam resist; producing an electron beam; moving the electron beam on the layer of plasma polymerized fluoropolymer to define the pattern, the layer then having exposed fluoropolymer areas defining the pattern and unexposed fluoropolymer areas; and removing the unexposed fluoropolymer areas to leave only the pattern on the face of the subtrate. According to an alternative, the process comprises: depositing the layer of negative electron beam resist on a face of a substrate; producing an electron beam; moving the electron beam on the layer of negative electron beam resist to define the pattern, the layer then having exposed resist areas defining the pattern and unexposed resist areas; treating the patterned layer with a base solution to decrease a dry etch resistance of the unexposed resist areas; and dry etching the unexposed resist areas to leave only the pattern on the face of the substrate.
    • 用于制造负电子束抗蚀剂图案的方法包括:在基板的表面上沉积等离子体聚合的氟聚合物层,等离子体聚合的含氟聚合物形成负电子束抗蚀剂; 产生电子束; 将等离子体聚合的氟聚合物层上的电子束移动以限定图案,然后该层具有限定图案和未曝光的含氟聚合物区域的暴露的含氟聚合物区域; 并除去未曝光的含氟聚合物区域,仅留下基材表面上的图案。 根据替代方案,该方法包括:将负电子束抗蚀剂层沉积在衬底的表面上; 产生电子束; 将电子束移动到负电子束抗蚀剂层上以限定图案,然后该层具有限定图案和未曝光的抗蚀剂区域的曝光的抗蚀剂区域; 用碱溶液处理图案化层以降低未曝光的抗蚀剂区域的耐干蚀刻电阻; 并干燥地蚀刻未曝光的抗蚀剂区域,仅留下基板表面上的图案。