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1. 发明公开

EP3289604A1 SWELLABLE FILM FORMING COMPOSITIONS AND METHODS OF NANOIMPRINT LITHOGRAPHY EMPLOYING SAME 有权
标题翻译：纳米印刷光刻技术使用相同的可膨胀成膜组合物和方法
公开(公告)号：EP3289604A1
公开(公告)日：2018-03-07
申请号：EP16786960.1
申请日：2016-04-25
申请人： 3M Innovative Properties Company
发明人： STRAND, John T. , OLSON, David B.
IPC分类号： H01L21/027
CPC分类号： C23C14/34 , B05D1/28 , B05D3/007 , B05D3/067 , B29C41/003 , B29L2009/008 , C08F220/28 , C08F2220/286 , C08J5/18 , C08J7/12 , C08J2333/14 , C09D4/00 , C23C14/021 , C23C14/58 , G03F7/0002 , G03F7/027 , H01L21/0272 , C08F2220/585 , C08F2222/1093
摘要： Compositions of matter capable of being cast and cured to form a microreplicated pattern on a substrate, and further capable of swelling on exposure to water so as to release from that substrate. Water swellable acrylic polymers formed from these compositions, and methods of using same in nanoimprint lithography are also disclosed.

2. 发明公开

EP3125274A4 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE 有权
标题翻译： VERFAHREN ZUR HERSTELLUNG EINES HALBLEITERBAUEMENTS SOWIE HALBLEITERBAUELEMENT
公开(公告)号：EP3125274A4
公开(公告)日：2017-09-13
申请号：EP15769513
申请日：2015-03-18
申请人： TORAY INDUSTRIES
发明人： TANIGAKI YUGO , FUJIWARA TAKENORI
IPC分类号： G03F7/42 , G03F7/023 , G03F7/075 , G03F7/40 , H01L21/027 , H01L21/304 , H01L21/306
CPC分类号： H01L21/0272 , B08B3/08 , B08B7/0057 , G03F7/0233 , G03F7/0757 , G03F7/40 , G03F7/42 , G03F7/423 , G03F7/425 , G03F7/427 , H01L21/0206 , H01L21/266 , H01L21/3081 , H01L21/31058 , H01L21/31111 , H01L21/31116
摘要： Disclosed is a method for manufacturing a semiconductor device, including a step of yielding a pattern 2a of a polysiloxane-containing composition over a substrate 1, and a step of forming an ion impurity region 6 in the substrate, wherein, after the step of forming an ion impurity region, the method further includes a step of firing the pattern at a temperature of 300 to 1,500°C. This method makes it possible that after the formation of the ion impurity region in the semiconductor substrate, the pattern 2a of the polysiloxane-containing composition is easily removed without leaving any residual. Thus, the yield in the production of a semiconductor device can be improved and the tact time can be shortened.
摘要翻译：公开了一种用于制造半导体器件的方法，该方法包括在衬底1上产生含聚硅氧烷的组合物的图案2a的步骤，以及在衬底中形成离子杂质区6的步骤，其中，在形成步骤离子杂质区域的情况下，还包括在300〜1500℃的温度下烧成图案的工序。该方法使得在半导体衬底中形成离子杂质区之后，含聚硅氧烷的组合物的图案2a容易除去而不留下任何残留物。由此，可以提高半导体装置的制造成品率，缩短生产节拍时间。

3. 发明公开

EP3055401A1 FOTORESIST-STRIPPING MIT INTELLIGENTEN FLÜSSIGKEITEN 有权转让
标题翻译：光致抗蚀剂使用智能液体的溶出
公开(公告)号：EP3055401A1
公开(公告)日：2016-08-17
申请号：EP14784431.0
申请日：2014-10-13
申请人： Bubbles and Beyond GmbH
发明人： SCHUMANN, Dirk
IPC分类号： C11D17/00 , C11D11/00 , C11D3/20 , C11D3/32
CPC分类号： C11D11/0047 , C11D1/146 , C11D1/75 , C11D1/83 , C11D3/2041 , C11D3/2044 , C11D3/2072 , C11D3/2075 , C11D3/2093 , C11D3/32 , C11D17/0013 , C11D17/0017 , H01L21/0272 , H01L21/31058 , H01L21/321
摘要： The invention relates to novel cleaning agents based on a multiphase system, to the use thereof for removing photoresist coatings from surfaces, and to a method for removing photoresist coatings from surfaces. The multiphase system according to the invention can be used in particular for removing coatings, photoresist coatings, polymer layers, dirt layers, insulation layers, and metal layers from surfaces.

4. 发明公开

EP2711972A4 METHOD FOR MANUFACTURING PATTERN STRUCTURE 审中-公开
标题翻译：一种用于生产图形结构
公开(公告)号：EP2711972A4
公开(公告)日：2014-10-22
申请号：EP12790206
申请日：2012-05-16
申请人： SUMITOMO CORP
发明人： MIYAGAWA TAKASHI , MURAKAMI TETSUYA , OKAMOTO KIMIYASU
IPC分类号： H01L21/027 , H01L21/205 , H01L21/3205 , H01L21/768 , H05K3/04
CPC分类号： C23C16/44 , H01L21/0272 , H01L29/66795 , H01L31/022425 , H05K3/048 , H05K2203/013 , Y02E10/50

5. 发明公开

EP1719157A2 DEVICE MANUFACTURING METHOD AND SUBSTRATE COMPRISING RADIATION SENSITIVE MATERIAL 审中-公开
标题翻译：元件制造方法及基板有辐射敏感材料
公开(公告)号：EP1719157A2
公开(公告)日：2006-11-08
申请号：EP05707571.5
申请日：2005-02-22
申请人： ASML Netherlands B.V.
发明人： PELLENS, Rudy, Jan, Maria
IPC分类号： H01L21/28 , H01L21/285 , G03F7/004 , G03F7/20
CPC分类号： H01L21/28587 , G03F7/095 , H01L21/0272
摘要： A method of producing a T-gate in a single stage exposure process using electromagnetic radiation is disclosed.

6. 发明公开

EP1335418A1 Method of fabricating a T-shaped electrode and semiconductor device comprising such an electrode 有权
标题翻译： Verfahren zur Herstellung einer T-förmigenElektrode
公开(公告)号：EP1335418A1
公开(公告)日：2003-08-13
申请号：EP02001998.0
申请日：2002-02-05
申请人： Maile, Bernd E., Dr.
发明人： Maile, Bernd E., Dr.
IPC分类号： H01L21/027 , H01L21/28 , H01L29/423
CPC分类号： H01L21/28114 , H01L21/0272 , H01L21/28587 , H01L29/42376 , Y10S438/945 , Y10S438/948 , Y10S438/951
摘要： A method of fabricating a vertically profiled electrode like a T-gate 40 on a semiconductor substrate 20 is described. The method comprises providing a resist structure 34 on the substrate 20, the resist structure 34 containing at least a first resist pattern 24' arranged on the substrate 20 and having a first opening 26, the first resist being negative resist, and a second resist pattern 32 having a second opening 30 surrounding the first opening 26. The vertical profile of the gate electrode 40 is defined by the contours and the relative location of the first and the second opening 26, 30. On the resist structure 34 a metal 38 is deposited and lift-off is performed to remove the second resist 32 together with the metal 38 deposited thereon.
摘要翻译：描述了在半导体衬底20上制造如T形门40的垂直成型电极的方法。该方法包括在基板20上设置抗蚀剂结构34，抗蚀剂结构34至少包含布置在基板20上的第一抗蚀剂图案24'，并具有第一开口26，第一抗蚀剂为负型抗蚀剂，第二抗蚀剂图案 32具有围绕第一开口26的第二开口30.栅极40的垂直轮廓由第一和第二开口26,30的轮廓和相对位置限定。在抗蚀剂结构34上，金属38被沉积并且执行剥离以与沉积在其上的金属38一起去除第二抗蚀剂32。

7. 发明公开

EP1246234A2 Method of manufacturing thin film transistor 失效
标题翻译： HerstellungsverfahrenfürDünnfilmtransistor
公开(公告)号：EP1246234A2
公开(公告)日：2002-10-02
申请号：EP02011357.7
申请日：1996-09-27
申请人： SONY CORPORATION
发明人： Gosain Pal, Dharam , Westwater, Jonathan , Nakagoe, Miyako , Usui, Setsuo
IPC分类号： H01L21/336 , G03F7/42 , H01L21/027
CPC分类号： H01L29/66765 , G03F7/42 , H01L21/02046 , H01L21/0272 , H01L29/78621 , Y10S438/949
摘要： The present invention relates to a method of processing a thin film comprising the steps of: selectively forming a resist pattern (35) on a ground surface (24); forming a thin film (41) on said ground surface (24) and a surface of said resist pattern (35): and removing said resist pattern (35) to selectively remove said thin film (41) thereon, wherein said removal of said resist pattern (35) is carried out by irradiating an energy beam.
摘要翻译：本发明涉及一种处理薄膜的方法，包括以下步骤：在地表面（24）上选择性地形成抗蚀剂图案（35）; 在所述接地面（24）上形成薄膜（41）和所述抗蚀剂图案（35）的表面，并且去除所述抗蚀剂图案（35）以选择性地去除其上的所述薄膜（41），其中所述去除所述抗蚀剂图案（35）通过照射能量束进行。

8. 发明公开

EP1005073A1 Method of forming dielectric thin film pattern and method of forming laminate pattern comprising dielectric thin film and conductive thin film 审中-公开
标题翻译：一种用于制造电介质薄膜结构或介电的复合结构和导电薄膜工艺
公开(公告)号：EP1005073A1
公开(公告)日：2000-05-31
申请号：EP99123371.9
申请日：1999-11-23
申请人： Murata Manufacturing Co., Ltd.
发明人： Koshido, Yoshihiro, Murata Manufacturing Co., Ltd. , Fujibayashi, Kei, Murata Manufacturing Co., Ltd. , Toyota, Yuji, Murata Manufacturing Co., Ltd. , Okawa, Tadayuki, Murata Manufacturing Co., Ltd. , Takahashi, Ryoichiro, Murata Manufactur. Co., Ltd.
IPC分类号： H01L21/3105 , H01L21/321
CPC分类号： H01L28/40 , H01L21/0272 , H01L21/31604 , H05K1/024 , H05K3/048 , Y10S438/951
摘要： A method of forming a dielectric thin film pattern, comprises the steps of: depositing a dielectric thin film on a substrate having a resist pattern thereon by a vapor deposition method, wherein as a material for the dielectric thin film, at least one of CeO 2 , Sm 2 O 3 , Dy 2 O 3 , Y 2 O 3 TiO 2 , Al 2 O 3 , and MgO is used; and removing the resist pattern whereby the dielectric thin film is patterned. A conductive film may additionally be provided on the dielectric film prior to the patterning step.
摘要翻译：形成介质薄膜图案的方法，包括以下步骤：在具有在其上通过汽相沉积法的抗蚀剂图案，worin作为材料的电介质薄膜，CeO 2与至少一种的衬底上沉积的电介质薄膜，氧化钐，镝，Y2O3的TiO2，Al2O3和MgO的使用; 并且由此将电介质薄膜被图案化去除抗蚀剂图案。导电电影可以附加地设置在电介质膜之前，在图案化步骤上。

9. 发明公开

EP1005066A2 Resist pattern, process for the information of the same, and process for the formation of wiring pattern 审中-公开
标题翻译：光致抗蚀剂图案，其生产方法，和用于生产的布线图案
公开(公告)号：EP1005066A2
公开(公告)日：2000-05-31
申请号：EP99122487.4
申请日：1999-11-11
申请人： Murata Manufacturing Co., Ltd.
发明人： Toyota, Yuji , Koshido, Yoshihiro , Hasegawa, Masayuki
IPC分类号： H01L21/033 , G03F7/00
CPC分类号： H05K3/108 , G03F7/00 , H01L21/0272 , H01L21/0274 , H05K3/0082 , H05K3/048 , H05K2203/056 , Y10S438/947 , Y10S438/948 , Y10S438/949 , Y10S438/951 , Y10S438/952
摘要： A process for the formation of a wiring pattern, which includes the steps of: exposing a resist through a photomask, the photomask having a pattern whose line width is equal to or less than a resolution limit; and developing the exposed resist to form a resist pattern having groove depressions on the surface thereof, the depressions not reaching the back of the resist pattern. The resist may be a positive resist in which case the resist pattern is formed on an underplate feed film; a plating metal is precipitated on the feed film in a region not covered by the resist pattern; the resist pattern is stripped after the precipitation; and the feed film is selectively removed in a region not covered by the plating metal. Alternatively, the resist may be a negative resist in which case the resist pattern is formed on a substrate; a metallic material is deposited on the resist pattern and the substrate; and the resist is stripped from the substrate to remove the overlying metallic material.
摘要翻译：一种用于形成布线图案的，其包括以下步骤：使通过光掩模的抗蚀剂，其具有的图案线宽大于分辨率极限以下的情况下光掩模; 和显影曝光的抗蚀剂，形成抗蚀剂的表面上具有图案凹槽凹陷它们，凹陷不达到抗蚀剂图案的背面。抗蚀剂可以是正型抗蚀剂在这种情况下，抗蚀剂图案形成在到下板饲料电影; 一个电镀金属在未覆盖有抗蚀剂图案的区域沉淀在馈送电影; 的抗蚀剂图案在沉淀后剥离; 和进给电影中未包括的电镀金属的区域选择性地去除。可替代地，该抗蚀剂可以是负型抗蚀剂在这种情况下，抗蚀剂图案形成在基板; 的金属材料沉积在抗蚀剂图案和基片; 和抗蚀剂从基板剥离以去除上覆的金属材料。

10. 发明公开

EP0903779A2 Manufacture of field effect transistors 审中-公开
标题翻译： Herstellung von Feldeffekttransistoren
公开(公告)号：EP0903779A2
公开(公告)日：1999-03-24
申请号：EP98307228.1
申请日：1998-09-08
申请人： LUCENT TECHNOLOGIES INC.
发明人： Lothian, James Robert , Ren, Fan
IPC分类号： H01L21/335 , H01L21/28 , H01L21/027 , H01L29/10
CPC分类号： H01L29/66462 , H01L21/0272 , H01L21/28581 , H01L21/28587 , H01L29/42316
摘要： The specification describes methods for making T-shaped metal gates for Schottky gate devices such as MESFETs and HEMTs. The method uses a bi-level photoresist technique to create a T-shaped feature for the gate structure. The metal gate is evaporated into the photoresist T-shaped feature and a lift-off preocess is used to remove unwanted metal. The photoresist is the dissolved away leaving the T-shaped gate. An important aspect of the process is the use of a plasma treatment of the first patterned resist level to harden it so that it is unaffected by the subsequent deposition and patterning of the second level resist.
摘要翻译：该说明书描述了用于制造诸如MESFET和HEMT之类的肖特基栅极器件的T形金属栅极的方法。该方法使用双电平光刻胶技术来为栅极结构创建T形特征。金属栅极被蒸发成光致抗蚀剂T形特征，并且使用剥离预处理来去除不需要的金属。光致抗蚀剂被离开离开T形门。该方法的一个重要方面是使用第一图案化抗蚀剂层的等离子体处理使其硬化，使得其不受第二层抗蚀剂的随后沉积和图案化的影响。

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