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1. 发明公开

EP3286778A1 FINE ALIGNMENT SYSTEM FOR ELECTRON BEAM EXPOSURE SYSTEM 审中-公开
公开(公告)号：EP3286778A1
公开(公告)日：2018-02-28
申请号：EP15890148
申请日：2015-09-18
申请人： INTEL CORP
发明人： BORODOVSKY YAN A
IPC分类号： H01L21/027
CPC分类号： H01J37/3045 , H01J37/045 , H01J37/09 , H01J37/20 , H01J37/244 , H01J37/3174 , H01J37/3177 , H01J2237/0453 , H01J2237/24475 , H01J2237/24578 , H01J2237/2817 , H01L21/0277 , H01L21/0337 , H01L21/31144 , H01L23/544 , H01L2223/5442 , H01L2223/54426 , H01L2223/54453 , H01L2223/54473
摘要： Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a method of fine alignment of an e-beam tool includes projecting an electron image of a plurality of apertures of an e-beam column over an X-direction alignment feature of a wafer while moving the wafer along the Y-direction. The method also includes detecting a time-resolved back-scattered electron (BSE) detection response waveform during the projecting. The method also includes determining an X-position of every edge of every feature of the X-direction alignment feature by calculating a derivative of the BSE detection response waveform. The method also includes, subsequent to determining an X-position of every edge of every feature of the X-direction alignment feature, adjusting an alignment of the e-beam column to the wafer.

2. 发明公开

EP3054351A4 HIGHLY SENSITIVE MULTILAYER RESIST FILM AND METHOD FOR IMPROVING PHOTOSENSITIVITY OF RESIST FILM 有权
标题翻译： HOCHEMPFINDLICHER MEHRSCHICHICHTIGER RESISTFILM UND VERFAHREN ZUR VERBESSERUNG DER STRAHLUNGSEMPFINDLICHKEIT DES RESISTFILMS
公开(公告)号：EP3054351A4
公开(公告)日：2017-05-10
申请号：EP14847270
申请日：2014-09-25
申请人： NAT INST FOR MATERIALS SCIENCE
发明人： KAWAKITA JIN , CHIKYO TOYOHIRO , NAKANE TAKAYUKI
IPC分类号： G03F7/09 , G03F7/11 , H01L21/027
CPC分类号： G03F7/11 , G03F7/091 , G03F7/20 , G03F7/32 , H01L21/0274 , H01L21/0277 , H01L21/0278
摘要： A resist film structure is provided, which allows a resist layer to have improved photosensitivity to EUV or electron beams without changing the photosensitivity of the resist material itself. A metal layer 1 with a thickness as small as a nanometer level is provided on a resist polymer layer 2 formed on a substrate 3. When the resist layer in this structure is exposed to light, the metal layer 1 produces a surface plasmon effect to enhance the irradiation to the resist film, so that the photosensitivity of the resist film is improved.
摘要翻译：提供抗蚀剂膜结构，其允许抗蚀剂层具有改进的对EUV或电子束的光敏性，而不改变抗蚀剂材料本身的光敏性。在形成于基板3上的抗蚀剂聚合物层2上设置厚度小至纳米级的金属层1.当该结构中的抗蚀剂层曝光时，金属层1产生表面等离子体激元效应以增强对抗蚀剂膜的照射，使得抗蚀剂膜的光敏性提高。

3. 发明公开

EP3155649A1 EBEAM NON-UNIVERSAL CUTTER 审中-公开
标题翻译： NICHT UNIVERSELLE EBEAM-SCHNEIDVORRICHTUNG
公开(公告)号：EP3155649A1
公开(公告)日：2017-04-19
申请号：EP14894750.0
申请日：2014-12-19
申请人： Intel Corporation
发明人： BORODOVSKY, Yan A. , NELSON, Donald W. , PHILLIPS, Mark C.
IPC分类号： H01L21/027
CPC分类号： G03F7/2037 , H01J37/045 , H01J37/06 , H01J37/1474 , H01J37/3007 , H01J37/3026 , H01J37/3174 , H01J37/3177 , H01J2237/0435 , H01J2237/0453 , H01J2237/303 , H01J2237/30422 , H01J2237/30438 , H01J2237/31762 , H01J2237/31764 , H01J2237/31776 , H01J2237/31796 , H01L21/0277 , H01L21/31144
摘要： Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a blanker aperture array (BAA) for an e-beam tool is described. The BAA is a non-universal cutter.
摘要翻译：描述适用于涉及互补电子束光刻（CEBL）的光刻设备和方法。在一个示例中，描述了用于电子束工具的消隐器孔径阵列（BAA）。 BAA是一种非通用刀具。

4. 发明公开

EP3054351A1 HIGHLY SENSITIVE MULTILAYER RESIST FILM AND METHOD FOR IMPROVING PHOTOSENSITIVITY OF RESIST FILM 有权
标题翻译：高灵敏度的多层保护膜和一种改善的保护膜放射敏感性
公开(公告)号：EP3054351A1
公开(公告)日：2016-08-10
申请号：EP14847270.7
申请日：2014-09-25
申请人： National Institute for Materials Science
发明人： KAWAKITA, Jin , CHIKYO, Toyohiro , NAKANE, Takayuki
IPC分类号： G03F7/11 , H01L21/027
CPC分类号： G03F7/11 , G03F7/091 , G03F7/20 , G03F7/32 , H01L21/0274 , H01L21/0277 , H01L21/0278
摘要： A resist film structure is provided, which allows a resist layer to have improved photosensitivity to EUV or electron beams without changing the photosensitivity of the resist material itself. A metal layer 1 with a thickness as small as a nanometer level is provided on a resist polymer layer 2 formed on a substrate 3. When the resist layer in this structure is exposed to light, the metal layer 1 produces a surface plasmon effect to enhance the irradiation to the resist film, so that the photosensitivity of the resist film is improved.

5. 发明公开

EP2973666A1 A METHOD OF FORMING A GATE CONTACT 审中-公开
标题翻译：用于生产门曝光
公开(公告)号：EP2973666A1
公开(公告)日：2016-01-20
申请号：EP14713986.9
申请日：2014-03-04
申请人： Northrop Grumman Systems Corporation
发明人： NAMBA, Carol O. , LIU, Po-Hsin , POUST, Sumiko , SMORCHKOVA, Ioulia , WOJTOWICZ, Michael , GRUNDBACHER, Ronald
IPC分类号： H01L21/285 , H01L29/423 , H01L29/20
CPC分类号： H01L21/28114 , H01L21/0277 , H01L21/28123 , H01L21/28537 , H01L21/28587 , H01L29/2003 , H01L29/42312 , H01L29/66431 , H01L29/66462 , H01L29/778 , H01L29/78
摘要： A method is provided for forming a gate contact for a compound semiconductor device. The gate contact is formed from a gate contact portion and a top or wing contact portion. The method allows for the tunablity of the size of the wing contact portion, while retaining the size of the gate contact portion based on a desired operational frequency. This is accomplished by providing for one or more additional conductive material processes on the wing contact portion to increase the cross-sectional area of the wing contact portion reducing the gate resistance, while maintaing the length of the gate contact portion to maintain the operating frequency of the device.

6. 发明授权

EP1732109B1 Formation d'un masque sur un circuit électronique intégré 有权
标题翻译：制造集成电子电路上形成掩模
公开(公告)号：EP1732109B1
公开(公告)日：2012-08-08
申请号：EP06290900.7
申请日：2006-06-01
申请人： STMicroelectronics (Crolles 2) SAS , COMMISSARIAT A L'ENERGIE ATOMIQUE
发明人： Bustos, Jessy , Thony, Philippe , Coronel, Philippe
IPC分类号： H01L21/027 , H01L21/3213 , H01L21/28 , H01L21/336 , H01L21/74 , H01L23/367 , H01L29/78 , H01L29/786
CPC分类号： H01L21/0277 , H01L21/0337 , H01L21/28123 , H01L21/32139 , H01L21/743 , H01L23/367 , H01L29/66484 , H01L29/66742 , H01L29/7831 , H01L29/78648 , H01L2924/0002 , H01L2924/00

7. 发明公开

EP1507286A2 Procédé de formation sous une couche mince d'un premier matériau de portions d'un autre matériau et/ou de zones de vide 有权
标题翻译：集成电路用栅极umschliessendem网络连接，并且晶体管的制造方法的制造方法
公开(公告)号：EP1507286A2
公开(公告)日：2005-02-16
申请号：EP04103813.4
申请日：2004-08-06
申请人： ST MICROELECTRONICS S.A. , COMMISSARIAT A L'ENERGIE ATOMIQUE
发明人： CORONEL, Philippe , LAPLANCHE, Yves , PAIN, Laurent
IPC分类号： H01L21/027 , H01L21/336 , H01L21/768 , H01L21/762
CPC分类号： H01L29/66772 , H01L21/0277 , H01L21/7682 , H01L29/42384 , H01L29/42392 , H01L29/78654
摘要： L'invention concerne un procédé de formation d'une zone de vide sous une couche d'un matériau donné comprenant les étapes suivantes : former sur un substrat un empilement d'une couche photosensible et d'une couche du matériau donné ; insoler une portion de la couche photosensible ou son complément selon que la couche photosensible est positive ou négative par un faisceau d'électrons passant à travers la couche du matériau donné ; et éliminer ladite portion de la couche photosensible.
摘要翻译：空区的下一层的形成给定的非感光材料的besteht：（a）形成一个光敏层和一个上基片的给定材料层的叠层; （B）绝缘感光层或它的互补物根据是否在感光层是通过穿过给定的材料层的电子束的正或负的一部分; （C）没有消除在感光层的部分。因此，该方法可用于互连的网络的形成和形成的晶体管的与周围的网格。

8. 发明公开

EP1452922A1 METHOD FOR FORMING FINE PATTERN 有权
标题翻译：形成精细图案的方法
公开(公告)号：EP1452922A1
公开(公告)日：2004-09-01
申请号：EP02775499.3
申请日：2002-11-05
申请人： TOKYO OHKA KOGYO CO., LTD.
发明人： SHINBORI, Hiroshi , SUGETA, Yoshiki , KANEKO, Fumitake , TACHIKAWA, Toshikazu
IPC分类号： G03F7/40 , H01L21/027
CPC分类号： G03F7/0035 , G03F7/40 , H01L21/0277
摘要： It is disclosed a method of forming fine patterns comprising repeating plural times the following course of steps: covering a substrate having thereon photoresist patterns with an over-coating agent for forming fine patterns, applying heat treatment to cause thermal shrinkage of the over-coating agent so that the spacing between the adjacent photoresist patterns is lessened by the resulting thermal shrinking action, and removing the over-coating agent. The invention provides a method of forming fine patterns which has high ability to control pattern dimensions and provide fine patterns that have a satisfactory profile and satisfy the characteristics required of semiconductor devices, even in the case of employing a substrate having thick-film photoresist patterns in a thickness of about 1.0 µm or more.
摘要翻译：公开了一种形成精细图案的方法，其包括重复多次以下步骤的步骤：用具有光致抗蚀剂图案的基板用用于形成精细图案的外涂剂覆盖，进行热处理以引起外涂剂的热收缩使得相邻的光致抗蚀剂图案之间的间隔由于所产生的热收缩作用而减少，并且除去外涂剂。本发明提供了一种形成精细图案的方法，该方法即使在使用在其中具有厚膜光致抗蚀剂图案的基板的情况下，也具有高控制图案尺寸的能力，并提供具有令人满意的轮廓并满足半导体器件所需特性的精细图案大约1.0μm或更大的厚度。

9. 发明公开

EP1290498A1 PROCEDE DE CREATION D'UN ETAGE DE CIRCUIT INTEGRE OU COEXISTENT DES MOTIFS FINS ET LARGES 有权
标题翻译：方法用于制造集成电路的层精细和广泛的结构
公开(公告)号：EP1290498A1
公开(公告)日：2003-03-12
申请号：EP01945431.3
申请日：2001-06-14
申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE
发明人： DELEONIBUS, Simon
IPC分类号： G03F7/00
CPC分类号： H01L21/823456 , H01L21/0274 , H01L21/0277 , H01L21/823437 , Y10S438/95
摘要： The invention concerns a method which consists in successively using a radiation-sensitive resin layer at sites (4') designed to form large semiconductor patterns in a still intact layer (2), beneath at least a hard mask (3'), then a resin layer sensitive to particle bombardment (6) above the fine patterns to be formed in that same layer (2) which can be juxtaposed with the former. The first resin patterns are collectively and rapidly exposed by an exposure, while the electron bombardment enables to form fine patterns with great accuracy. Another hard mask (9) has been deposited before (6) the second resin (6) and forms flanks (10) around the large patterns, protecting them from lateral attacks during etching.

10. 发明公开

EP0260201A3 Plasma etching using a bilayer mask 失效
标题翻译：使用双层面膜进行等离子体蚀刻
公开(公告)号：EP0260201A3
公开(公告)日：1988-10-26
申请号：EP87402028
申请日：1987-09-11
申请人： FAIRCHILD SEMICONDUCTOR CORPORATION
发明人： Cleeves, James M. , Heard, James G. , Tan, Zoilo C. H.
IPC分类号： H01L21/31 , H01L21/314
CPC分类号： H01L21/31144 , H01L21/0277 , H01L21/31116 , H01L21/32134 , H01L21/32136
摘要： A bilayer mask is utilized for etching a primary layer, which may be either an aluminum metallization layer or a dielectric layer. The bilayer mask includes both a thin resist layer and a metal imaging layer. The thin resist layer provides for high resolution patterning of the metal imaging layer. The metal imaging layer, in turn, provides for durability to withstand subsequent plasma etching of the underlying primary layer.

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