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1. 发明公开

EP3387162A1 SYSTEM CONFIGURED FOR SPUTTER DEPOSITION ON A SUBSTRATE, SHIELDING DEVICE FOR A SPUTTER DEPOSITION CHAMBER, AND METHOD FOR PROVIDING AN ELECTRICAL SHIELDING IN A SPUTTER DEPOSITION CHAMBER 审中-公开
公开(公告)号：EP3387162A1
公开(公告)日：2018-10-17
申请号：EP15910151.8
申请日：2015-12-09
申请人： Applied Materials, Inc.
发明人： ZILBAUER, Thomas Werner , HENKEL, Uwe , THIEL, Johannes , EL ZAAR, Kamal , KELLER, Stefan
IPC分类号： C23C14/34 , C23C14/54
CPC分类号： H01J37/3441 , C23C14/3471 , H01J37/32477 , H01J37/32605 , H01J37/32651
摘要： The present disclosure provides a system configured for sputter deposition on a substrate. The system includes a sputter deposition chamber having a processing zone, one or more sputter deposition sources arranged at a first side of the processing zone, and a shielding device arranged at a second side of the processing zone, wherein the shielding device includes a frame assembly mounted to the sputter deposition chamber and one or more conductive sheets detachably mounted on the frame assembly, wherein the one or more conductive sheets provide a surface arranged along the processing zone.

2. 发明公开

EP3250729A1 ANODE SHIELD 审中-公开
标题翻译：阳极护罩
公开(公告)号：EP3250729A1
公开(公告)日：2017-12-06
申请号：EP16765796.4
申请日：2016-03-17
申请人： Vision Ease, LP
发明人： MARSHALL, Michael , BROWN, Jeff
IPC分类号： C23C14/10 , C23C14/34 , C23C14/40 , C23C14/44 , C23C14/50
CPC分类号： H01J37/3441 , H01J37/34 , H01J37/3438 , H01J37/3447 , H01J37/345 , H01J2237/026 , H01J2237/3323
摘要： A sputter system and an anode and anode shield assembly that provide for improved grounding for extended sputter cycles.

3. 发明公开

EP2209132A1 Charged particle beam PVD device, shielding device, coating chamber for coating substrates, and method of coating 审中-公开
标题翻译：带电粒子束物理气相沉积装置，屏蔽装置，涂覆用于涂覆基材和涂层处理室
公开(公告)号：EP2209132A1
公开(公告)日：2010-07-21
申请号：EP09150786.3
申请日：2009-01-16
申请人： Applied Materials, Inc.
发明人： Krempel-Hesse, Joerg , Grillmayer, Juergen , Hermanns, Uwe
IPC分类号： H01J37/34
CPC分类号： H01J37/3441 , H01J37/3435 , H01J37/3447
摘要： A charged particle beam PVD device is provided, including a target (262) of coating material inside of a casing (261), a vapor aperture (263) provided in the casing, and a shielding device (266, 268; 2680) provided adjacent to the vapor aperture, the shielding device being on floating potential.
摘要翻译：一种带电粒子束PVD装置被提供，其包括壳体（261），设置在所述壳体的蒸汽孔（263）的内涂层材料的靶（262），和一个屏蔽装置（266，268; 2680）设置成邻近到蒸汽孔，所述屏蔽装置是浮动电势。

4. 发明公开

EP0825276A2 Sputter target for eliminating redeposition on the target sidewall 失效
标题翻译： Sputtertarget zum Vermeiden der Wiederablagerung auf dieTargetseitenwände
公开(公告)号：EP0825276A2
公开(公告)日：1998-02-25
申请号：EP97114555.2
申请日：1997-08-22
申请人： APPLIED MATERIALS, INC.
发明人： Fu, Jianming , van Gogh, James
IPC分类号： C23C14/34 , H01J37/34
CPC分类号： H01J37/3441 , C23C14/3407 , H01J37/34 , H01J37/3423
摘要： An improved sputter target (62) and shield (70) eliminate redeposition of sputtered material onto the target (62) and prevents the formation of deposits on the electrically insulative member (22) between the target (62) and enclosure wall (12). The sputter target (62) is designed to allow the plasma to sputter the entire sidewall of the target (62) while a narrow passage (69) between the target (62), backing plate (68) and shield (70) protects the insulative member (22) from line-of-sight deposition, prevents formation of a plasma within the passage (69) without causing arcing between the backing plate (68) and shield (70). The target (62) of the present invention is generally disk-shaped with a sloped or frustoconical sidewall surface (64) around the perimeter edge.
摘要翻译：改进的溅射靶（62）和屏蔽（70）消除溅射材料在靶（62）上的再沉积，并且防止在靶（62）和外壳壁（12）之间的电绝缘构件（22）上形成沉积物。溅射靶（62）被设计成允许等离子体溅射靶（62）的整个侧壁，而目标（62），背板（68）和屏蔽（70）之间的窄通道（69）保护绝缘体（22）从视线沉积的角度防止在通道（69）内形成等离子体而不引起背板（68）和屏蔽（70）之间的电弧。本发明的目标（62）通常是盘形的，具有围绕周边边缘的倾斜或截头圆锥形侧壁表面（64）。

5. 发明公开

EP0794554A2 Target for a physical vapor deposition system 失效
标题翻译：目标物理学（Dampfabscheidungssystem）
公开(公告)号：EP0794554A2
公开(公告)日：1997-09-10
申请号：EP97301501.9
申请日：1997-03-06
申请人： APPLIED MATERIALS, INC.
发明人： Van Gogh, James , Dorleans, Fernand , Hagerty, Christopher , Lloyd, Mark , Tang, Howard , Yang, Siyaun , West, R. Steve
IPC分类号： H01J37/34
CPC分类号： H01J37/3441 , C23C14/3407 , H01J37/3408 , H01J37/3423 , H01J37/3447
摘要： The disclosure relates to a target (200) for a physical deposition (PVD) system. The target (202) has a portion (234) of the target that overhangs and shadows the side wall (218) of the target thus preventing material from depositing on the edge. To further reduce contaminant generation, the target is combined with an improved dark space shield (200) having a first end (224) and a second end (226), where the second end conventionally supports a collimator (110) and the first end has an inner surface (232) that is substantially vertical.
摘要翻译：本公开涉及用于物理沉积（PVD）系统的靶（200）。目标（202）具有目标的一部分（234），其突出并遮蔽目标的侧壁（218），从而防止材料沉积在边缘上。为了进一步减少污染物产生，目标与具有第一端（224）和第二端（226）的改进的暗空间屏蔽（200）组合，其中第二端通常支撑准直器（110），并且第一端具有基本垂直的内表面（232）。

6. 发明公开

EP0482891A3 High vacuum magnetron sputter source 失效
标题翻译：高真空磁控溅射源
公开(公告)号：EP0482891A3
公开(公告)日：1992-06-17
申请号：EP91309760.6
申请日：1991-10-22
申请人： VARIAN ASSOCIATES, INC.
发明人： Demaray, Richard E. , Hoffman, Vance E.
IPC分类号： H01J37/34
CPC分类号： H01J37/3441 , H01J37/3408 , H01J37/3494
摘要： A vacuum sputter apparatus capable of performing sputter operations at reduced operating pressure. Magnetic means (14) is supported behind the cathode (6) for producing magnetic flux lines (16) generally parallel to a first, primary surface (8) to be sputtered which is held at a high electrical potential, thus giving rise to a magnetron plasma adjacent the primary surface. The magnetic means confines the plasma to produce a closed loop erosion path on the first surface. A dark space shield (20) extends from the wall (4) of the vacuum chamber toward the first surface, but terminates a distance from the primary surface so as to expose a portion of the second surface (10). The dark space shield is recessed a sufficient distance from the first target surface to minimize the density of the fringing field lines intersecting the dark space shield. In this manner, the plasma generated adjacent the first surface is enriched both by electrons originating from a secondary plasma at the second surface and by electrons reflected back to the first surface moving along the magnetic flux lines. Sputtering action can thus take place efficiently at reduced operating pressure. Reduced operating pressure furthermore provides more uniform film deposition, while eliminating differential segregation of the sputter compound material.

7. 发明公开

EP0482891A2 High vacuum magnetron sputter source 失效
标题翻译： Hochvakuum-Magnetronzerstäubungsquelle。
公开(公告)号：EP0482891A2
公开(公告)日：1992-04-29
申请号：EP91309760.6
申请日：1991-10-22
申请人： VARIAN ASSOCIATES, INC.
发明人： Demaray, Richard E. , Hoffman, Vance E.
IPC分类号： H01J37/34
CPC分类号： H01J37/3441 , H01J37/3408 , H01J37/3494
摘要： A vacuum sputter apparatus capable of performing sputter operations at reduced operating pressure. Magnetic means (14) is supported behind the cathode (6) for producing magnetic flux lines (16) generally parallel to a first, primary surface (8) to be sputtered which is held at a high electrical potential, thus giving rise to a magnetron plasma adjacent the primary surface. The magnetic means confines the plasma to produce a closed loop erosion path on the first surface. A dark space shield (20) extends from the wall (4) of the vacuum chamber toward the first surface, but terminates a distance from the primary surface so as to expose a portion of the second surface (10). The dark space shield is recessed a sufficient distance from the first target surface to minimize the density of the fringing field lines intersecting the dark space shield. In this manner, the plasma generated adjacent the first surface is enriched both by electrons originating from a secondary plasma at the second surface and by electrons reflected back to the first surface moving along the magnetic flux lines. Sputtering action can thus take place efficiently at reduced operating pressure. Reduced operating pressure furthermore provides more uniform film deposition, while eliminating differential segregation of the sputter compound material.
摘要翻译：一种能够在降低的操作压力下进行溅射操作的真空溅射装置。磁性装置（14）被支撑在阴极（6）的后面，用于产生大体平行于第一主表面（8）的磁通线（16），以便被保持在高电位，从而产生磁控管等离子体邻近主表面。磁性装置将等离子体限制在第一表面上产生闭环侵蚀路径。暗空间屏蔽（20）从真空室的壁（4）朝向第一表面延伸，但是终止与主表面的距离，以暴露第二表面（10）的一部分。暗空间屏蔽物与第一目标表面凹入足够的距离，以使与暗空间屏蔽相交的边缘场线的密度最小化。以这种方式，与第一表面相邻产生的等离子体由来自第二表面的次级等离子体的电子以及反射回沿着磁通线移动的第一表面的电子富集。因此，溅射作用可以在降低的操作压力下有效地发生。降低的操作压力进一步提供更均匀的膜沉积，同时消除溅射复合材料的不均匀偏析。

8. 发明公开

EP3337914A1 METHOD AND APPARATUS FOR CO-SPUTTERING MULTIPLE TARGETS 有权
公开(公告)号：EP3337914A1
公开(公告)日：2018-06-27
申请号：EP16839899.8
申请日：2016-08-19
申请人： Applied Materials, Inc.
发明人： SUBRAMANI, Anantha K. , WU, Hanbing , WANG, Wei W. , GOEL, Ashish , GUGGILLA, Srinivas , NISTOR, Lavinia
IPC分类号： C23C14/34 , C23C14/50 , C23C14/56
CPC分类号： H01J37/3417 , C23C14/3464 , C23C14/564 , H01J37/3441 , H01J37/3447 , H01J37/3464 , H01J37/3485
摘要： Embodiments of a method and apparatus for co-sputtering multiple target materials are provided herein. In some embodiments, a process chamber including a substrate support to support a substrate; a plurality of cathodes coupled to a carrier and having a corresponding plurality of targets to be sputtered onto the substrate; and a process shield coupled to the carrier and extending between adjacent pairs of the plurality of targets.

9. 发明公开

EP2920339A1 METHOD AND SYSTEM FOR MAINTAINING AN EDGE EXCLUSION SHIELD 审中-公开
标题翻译： VERFAHREN UND系统ZUR AUFRECHTERHALTUNG EINER KANTENAUSSCHLUSSABSCHIRMUNG
公开(公告)号：EP2920339A1
公开(公告)日：2015-09-23
申请号：EP12794899.0
申请日：2012-11-15
申请人： Applied Materials, Inc.
发明人： LINDENBERG, Ralph , KOPARAL, Erkan
IPC分类号： C23C14/56 , C23C14/04 , C23C14/50 , B65G49/06 , H01L21/67 , H01L21/677 , C23C16/04 , C23C16/44
CPC分类号： H01J37/3441 , C23C14/042 , C23C14/50 , C23C14/564 , C23C14/568 , C23C16/042 , C23C16/4401 , H01J2237/3323 , H01L21/67173 , H01L21/67751 , H01L21/6776
摘要： A method for extracting a shielding element from a processing chamber of a substrate processing system or inserting the shielding element into the processing chamber is provided. The substrate processing system includes the processing chamber, a first shielding element for excluding application of material onto parts of a substrate, and a substrate transportation system for transporting substrates or substrate carriers into and out of the processing chamber. The method includes transporting the first shielding element by the substrate transportation system.
摘要翻译：提供了一种从基板处理系统的处理室中提取屏蔽元件或将屏蔽元件插入处理室的方法。基板处理系统包括处理室，用于排除将材料施加到基板的部件上的第一屏蔽元件和用于将基板或基板载体输入和移出处理室的基板输送系统。该方法包括通过基板输送系统输送第一屏蔽元件。

10. 发明公开

EP2792766A1 SPUTTERING DEVICE, TARGET AND SHIELD 有权
标题翻译：溅射和SHIELD
公开(公告)号：EP2792766A1
公开(公告)日：2014-10-22
申请号：EP12857644.4
申请日：2012-08-30
申请人： Canon Anelva Corporation
发明人： ISHIHARA, Shigenori
IPC分类号： C23C14/34
CPC分类号： H01J37/3411 , C23C14/3407 , C23C14/564 , H01J37/3414 , H01J37/3417 , H01J37/3435 , H01J37/3441
摘要： A sputtering apparatus includes a backing plate, a fixing portion, and a shield surrounding the periphery of a target and having an opening. The fixing portion fixes the target to the backing plate by pressing the peripheral portion of the target against the backing plate. The shield includes a facing portion facing the backing plate without the fixing portion intervening between them, and an outer portion formed outside the facing portion. The gap between the facing portion and the backing plate is smaller than the gap between the outer portion and the backing plate. The inner surface of the shield, which faces a processing space, includes a portion which inclines such that the distance between the inner surface and the backing plate decreases from the outer portion to the facing portion.

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