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1. 发明公开

EP2388801A4 MULTI-COLUMN ELECTRON BEAM LITHOGRAPHY SYSTEM AND ELECTRON BEAM ORBIT ADJUSTING METHOD THEREOF 有权
标题翻译：随着对调节电子TRAIN多列和方法电子光刻系统
公开(公告)号：EP2388801A4
公开(公告)日：2012-02-08
申请号：EP09841827
申请日：2009-03-16
申请人： ADVANTEST CORP , YABE TAKAYUKI
发明人： YAMADA AKIO
IPC分类号： H01J37/317 , H01J37/302
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/3023 , H01J37/3177 , H01J2237/15 , H01J2237/30461 , H01J2237/30472

2. 发明公开

EP2388801A1 MULTI-COLUMN ELECTRON BEAM LITHOGRAPHY SYSTEM AND ELECTRON BEAM ORBIT ADJUSTING METHOD THEREOF 有权
标题翻译：随着对调节电子TRAIN多列和方法电子光刻系统
公开(公告)号：EP2388801A1
公开(公告)日：2011-11-23
申请号：EP09841827.0
申请日：2009-03-16
申请人： Advantest Corporation , Yabe, Takayuki
发明人： YAMADA, Akio
IPC分类号： H01L21/027
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/3023 , H01J37/3177 , H01J2237/15 , H01J2237/30461 , H01J2237/30472
摘要： A multi-column electron beam lithography apparatus includes multiple columns, each including a mask having several aperture patterns; a selective deflector provided on the mask's incident side to deflect an electron beam to select an aperture pattern; a bending back deflector provided on the mask's exit side to bend the beam passed through the pattern back to the column optical axis; and an electron beam trajectory adjustment unit to adjust deflection efficiencies of the deflectors without the mask installed to allow the beam deflected toward any positions in a deflection region by the selective deflector to be bent back and applied to the same position on a sample by the bending back deflector, and to adjust the deflection efficiency of the selective deflector with the mask installed to allow the beam to be deflected toward any pattern of the mask, while maintaining a relationship between the deflection efficiencies.
摘要翻译：多列的电子束光刻设备包括多个列，每列包括具有几个开口图案的掩模; 设置在掩模的入射侧的选择性的偏转器偏转的电子束以选择的孔图案; 设置在掩模的出口侧的弯曲回偏转器弯曲穿过图案回到塔光轴通过的光束; 和电子束轨迹调整单元，调整所述偏转器的偏转效率没有安装，以允许光束朝向通过选择性偏转器在偏转区中的任何位置偏转的掩模，由弯曲向后弯曲和施加到相同的位置上的样品回偏转器，并调整与安装，以允许光束朝向掩模的任何图案被偏转掩模选择性偏转器的偏转效率，同时保持偏转效率之间的关系。

3. 发明公开

EP1095393A2 SYSTEM AND METHOD TO CORRECT FOR DISTORTION CAUSED BY BULK HEATING IN A SUBSTRATE 有权
标题翻译：系统和方法用于校正VOLUMENEUFHEIZUNG在衬底引起的失真
公开(公告)号：EP1095393A2
公开(公告)日：2001-05-02
申请号：EP00923351.1
申请日：2000-04-12
申请人： Etec Systems, Inc.
发明人： CHILESE, Francis, C. , SHAMOUN, Bassam , TROST, David
IPC分类号： H01J37/317
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J2237/30455 , H01J2237/30461
摘要： An electron beam writing system includes an electron beam patterning machine operable to emit an electron beam to form a pattern on a substrate. A computer control system, coupled to the electron beam patterning machine, has a plurality of pre-computed distortion maps. Each distortion map describes expected distortions of the substrate caused by bulk heating resulting from exposure to the electron beam. The computer control system controls the electron beam patterning machine using the distortion maps in order to adjust for the expected distortions.

4. 发明授权

EP0166004B1 Proximity effect correction method for E-beam lithography 失效
标题翻译：用于电子束光刻的近似效应校正方法
公开(公告)号：EP0166004B1
公开(公告)日：1988-11-30
申请号：EP84106180.7
申请日：1984-05-30
申请人： International Business Machines Corporation
发明人： Forster, Theodor , Kern, Dieter , Vettiger, Peter , Wilson, Alan Dixon
IPC分类号： H01J37/317 , H01J37/304 , G03F7/20
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/30461

5. 发明公开

EP0166004A1 Proximity effect correction method for E-beam lithography 失效
标题翻译： Korrekturmethode des Nahwirkungseffektes in der Elektronenstrahllithographie。
公开(公告)号：EP0166004A1
公开(公告)日：1986-01-02
申请号：EP84106180.7
申请日：1984-05-30
申请人： International Business Machines Corporation
发明人： Forster, Theodor , Kern, Dieter , Vettiger, Peter , Wilson, Alan Dixon
IPC分类号： H01J37/317 , H01J37/304 , G03F7/20
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/30461
摘要： A real time proximity effect correction method for e-beam lithography on substrates of variable material compositions. Pattern data sets including beam stepping rate adjustment information (F L , F M , F H ) are provided for a number (N) of different substrate material ranges. During e-beam exposure, the backscattered electrons are measured (BS) and used to determine the substrate range and to select the corresponding pattern set for e-beam writing control.
摘要翻译：用于电子束光刻在可变材料组合物的衬底上的实时邻近效应校正方法。对于不同的（N）个不同的衬底材料范围，提供了包括光束步进率调整信息（FL，FM，FH）的图案数据集。在电子束曝光期间，测量背散射电子（BS）并用于确定衬底范围并选择用于电子束写入控制的相应图案组。

6. 发明公开

EP2471086A4 PATTERN MODIFICATION SCHEMES FOR IMPROVED FIB PATTERNING 有权
标题翻译： PATTERN用于改进时间表改性FIB筛选
公开(公告)号：EP2471086A4
公开(公告)日：2013-01-30
申请号：EP10812685
申请日：2010-08-28
申请人： FEI CO
发明人： MIRRO GENE , KOOIJMAN CORNELIS SANDER , VOS HENDRIK JAN DE , MILLER TOM
IPC分类号： H01J37/147 , H01J37/04 , H01J37/302
CPC分类号： H01J3/26 , H01J37/1472 , H01J37/1477 , H01J37/3026 , H01J2237/1504 , H01J2237/1518 , H01J2237/1526 , H01J2237/30416 , H01J2237/3045 , H01J2237/30461

7. 发明授权

EP1722398B1 Deflection Signal Compensation for Charged Particle Beam 有权
标题翻译：为带电粒子的束偏转信号补偿
公开(公告)号：EP1722398B1
公开(公告)日：2009-11-25
申请号：EP06113787.3
申请日：2006-05-11
申请人： FEI COMPANY
发明人： Hill, Raymond , Rosenberg, Steve , Downer, Daniel
IPC分类号： H01J37/302 , H01J37/147
CPC分类号： H01J37/1474 , H01J37/1477 , H01J37/28 , H01J37/302 , H01J37/304 , H01J37/3056 , H01J2237/1516 , H01J2237/30461 , H01J2237/30483

8. 发明公开

EP1482374A3 Method of generating mask distortion data, exposure method and method of producing semiconductor device 审中-公开
标题翻译：一种用于产生Maskenverzeichnungsdaten，曝光方法，以及用于生产半导体器件的方法
公开(公告)号：EP1482374A3
公开(公告)日：2007-05-30
申请号：EP04012335.8
申请日：2004-05-25
申请人： SONY CORPORATION
发明人： Omori, Shinji
IPC分类号： G03F9/00
CPC分类号： G03F9/7003 , G03F1/20 , G03F1/68 , G03F9/7084 , H01J2237/30461 , H01J2237/31794 , Y10S430/143
摘要： A method of generating mask distortion data capable of improving accuracy of distortion measurement, an exposure method using the same and a method of producing a semiconductor device, wherein a production mask is produced by a first thin film formed with a predetermined pattern, and a positional accuracy measurement mask is produced by forming second positional accuracy measurement marks at substantially same positions as those of the first positional accuracy measurement marks on a mask blanks having a second thin film, positions of the second positional accuracy measurement marks and third positional accuracy measurement marks of the positional accuracy measurement mask are measured, a correlation function of the both are calculated, positions of the first positional accuracy measurement marks of the production mask are measured, and mask distortion data on the first thin film of the production mask is generated by using the correlation function.
摘要翻译：该方法包括获得一个定位精度测量掩模和测量前掩模的另一个和第三掩模的位置。的相关函数是后者的位置和所述第三标记之间计算。前标记的位置进行测量。掩模失真数据是通过使用一个相关函数对从前者标记的位置的生产掩模的薄膜生成。因此独立权利要求中包括了以下内容：（a）关于曝光方法，用于通过使用掩模的生产（B）的制造半导体器件的方法曝光的图案。

9. 发明公开

EP1766572A1 AREA BASED OPTICAL PROXIMITY CORRECTION IN RASTER SCAN PRINTING 审中-公开
标题翻译： BEREICHSBASIERTE OPTISCHEPROXIMITÄTSKORREKTURBEI RASTERSCAN-DRUCKEN
公开(公告)号：EP1766572A1
公开(公告)日：2007-03-28
申请号：EP05789232.5
申请日：2005-07-01
申请人： Applied Materials, Inc.
发明人： CHABRECK, Thomas, E. , HOWELLS, Samuel, C. , HUBBARD, John, J. , TEITZEL, Robin, L.
IPC分类号： G06T5/00 , G03F7/20
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , G03F1/36 , G03F1/68 , G03F7/70383 , G03F7/70441 , G03F7/70558 , G06T7/13 , H01J37/302 , H01J2237/30461 , H01J2237/31769
摘要： Methods and apparatus for correcting defects, such as rounded corners and line end shortening, in patterns formed via lithography are provided. Such defects are compensated for 'post-rasterization' by manipulating the grayscale values of pixel maps.
摘要翻译：提供了用于校正通过光刻形成的图案中的缺陷（例如圆角和线端缩短）的方法和装置。通过操纵像素图的灰度值来补偿这种缺陷“后光栅化”。

10. 发明公开

EP1231516A3 Method of forming and adjusting optical system and exposure apparatus, and for determining specification thereof and related computer system 审中-公开
标题翻译：用于制备和调节的光学系统和一个曝光装置，确定所述规范的计算机系统的方法，以及用于
公开(公告)号：EP1231516A3
公开(公告)日：2004-09-08
申请号：EP02250904.6
申请日：2002-02-11
申请人： Nikon Corporation
发明人： Hamatani, Masato, c/o Nikon Corporation , Tsukakoshi, Toshio, c/o Nikon Corporation
IPC分类号： G03F7/20
CPC分类号： G03F7/706 , H01J2237/30433 , H01J2237/30461
摘要： A computer system comprises a first computer into which target information that an optical apparatus is to achieve is inputted and a second computer that determines the specification of a projection optical system based on the target information received from the first computer via a communication path with using a wave-front aberration amount, which the projection optical system is to satisfy, as a standard. Therefore, in the process of making the projection optical system, higher-order components of the aberration as well as lower-order components can be simultaneously corrected by adjusting the projection optical system based on the result of measuring the wave-front aberration to satisfy the specification, so that the making process becomes simpler. Furthermore, the target that the exposure apparatus is to achieve is securely achieved due to the projection optical system.

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