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1. 发明公开

EP1131679A1 SYSTEM TO REDUCE HEAT-INDUCED DISTORTION OF PHOTOMASKS DURING LITHOGRAPHY 审中-公开
标题翻译：系统ZUR REDUZIERUNGWÄRME-BEDINGTER VERFORMUNG VON FOTOMASKEN在LITHOGRAPHISCHEN VERFAHREN
公开(公告)号：EP1131679A1
公开(公告)日：2001-09-12
申请号：EP00963637.4
申请日：2000-09-19
申请人： Etec Systems, Inc.
发明人： SHAMOUN, Bassam , TROST, David
IPC分类号： G03F7/20 , H01J37/317
CPC分类号： B82Y10/00 , B82Y40/00 , G03F1/00 , H01J37/3174 , H01J2237/31794
摘要： The present invention relates generally to methods, apparatus and materials to reduce or minimize the heating of a substrate (and associated distortions of the photomask) caused by electron-beam energy deposited in the substrate during patterning. Heating of the substrate is exacerbated by radiative transfer of infrared energy from the substrate to other nearby components of the e-beam apparatus followed by reflection or re-radiation of a portion of the energy back to the substrate. The present invention provides useful materials and methods for reducing such reflection or re-radiation effects, leading to temperature stability of the substrate, reduced thermal distortion and the possibility of increased patterning accuracy. The infrared absorbing materials of the present invention also possess sufficient electrical conductivity to dissipate scattered electrons residing on the material, and sufficient thermal conductivity to dissipate heat rapidly and not result in local heating or significant temperature rise of the absorber. The semiconducting material silicon carbide (SiC) is satisfactory for the practice of the present invention. Doped SiC having altered electrical conductivity may also be used. It is shown that emission and re-absorption from the uncoated face of the substrate dominates the substrate's temperature rise.
摘要翻译：本发明一般涉及减少或最小化在图案化期间沉积在衬底中的电子束能量引起的衬底加热（以及相关的光掩模失真）的方法，设备和材料。衬底的加热通过红外能量从电子束设备的其他附近部件的辐射传递加剧，随后将能量的一部分反射或再辐射回到衬底。本发明提供用于减少这种反射或再辐射效应的有用材料和方法，导致衬底的温度稳定性，降低的热变形和增加图案精度的可能性。本发明的红外吸收材料还具有足够的导电性，以消散驻留在材料上的散射电子，并且具有足够的导热性以快速散发热量，并且不会导致吸收体的局部加热或显着的温度升高。半导体材料碳化硅（SiC）对于本发明的实践是令人满意的。也可以使用具有改变的导电性的掺杂的SiC。显示从衬底的未涂覆面的发射和再吸收主导衬底的温度升高。

2. 发明公开

EP1095393A2 SYSTEM AND METHOD TO CORRECT FOR DISTORTION CAUSED BY BULK HEATING IN A SUBSTRATE 有权
标题翻译：系统和方法用于校正VOLUMENEUFHEIZUNG在衬底引起的失真
公开(公告)号：EP1095393A2
公开(公告)日：2001-05-02
申请号：EP00923351.1
申请日：2000-04-12
申请人： Etec Systems, Inc.
发明人： CHILESE, Francis, C. , SHAMOUN, Bassam , TROST, David
IPC分类号： H01J37/317
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J2237/30455 , H01J2237/30461
摘要： An electron beam writing system includes an electron beam patterning machine operable to emit an electron beam to form a pattern on a substrate. A computer control system, coupled to the electron beam patterning machine, has a plurality of pre-computed distortion maps. Each distortion map describes expected distortions of the substrate caused by bulk heating resulting from exposure to the electron beam. The computer control system controls the electron beam patterning machine using the distortion maps in order to adjust for the expected distortions.

3. 发明公开

EP0883892A1 VACUUM COMPATIBLE LINEAR MOTION DEVICE 失效
标题翻译： VACUUMKOMPATIBLE LINEARBEWEGUNGSVORRICHTUNG
公开(公告)号：EP0883892A1
公开(公告)日：1998-12-16
申请号：EP97953082.0
申请日：1997-12-10
申请人： Etec Systems, Inc.
发明人： TROST, David , VENEKLASEN, Lee
IPC分类号： F16C29 , F16C32 , G03F7 , H01J37 , H01L21
CPC分类号： F16C32/06 , F16C29/025 , F16C32/0603 , F16C33/748 , F16C2300/62 , G03F7/70716 , G03F7/70816 , H01J37/20 , H01J2237/20221 , H01J2237/3175 , Y10S277/913 , Y10T74/20354
摘要： A vacuum compatible linear motion device having a fluid bearing is contained within a vacuum chamber having a working pressure of significantly less than one atmosphere. The fluid bearing is contained within a vacuum enclosure within the vacuum chamber and is maintained at a pressure higher than that of the vacuum chamber but less than one atmosphere, thus esentially isolating the fluid bearing. A moveable payload is coupled to the linear motion device such that linear motion in the direction of the long axis of the device is provided to the moveable payload.

4. 发明公开

EP0895652A1 METHOD AND APPARATUS FOR RUN-TIME CORRECTION OF PROXIMITY EFFECTS IN PATTERN GENERATION 失效
标题翻译：方法和设备的时间改在NAHWIRKUNGSEFFEKTEN的图案产生
公开(公告)号：EP0895652A1
公开(公告)日：1999-02-10
申请号：EP98902808.0
申请日：1998-01-23
申请人： Etec Systems, Inc.
发明人： VENEKLASEN, Lee, H. , INNES, Robert , BABIN, Sergey , TROST, David , VARNER, Jeffrey
IPC分类号： H01J37 , H01L21
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3026 , H01J37/3174 , H01J2237/31769 , Y10S430/143
摘要： An electron beam pattern generating system for exposing a pattern on a substrate using a raster scan method. The system stores a rasterized representation of the pattern as a plurality of regular pixel dose exposure levels. These pixel dose exposure levels are evaluated by the system for one or more proximity effects and corrections to the dose exposure level and/or pixel location are calculated. The system includes apparatus for both calculation and storage of intermediate and final results as required. As they are calculated, the corrections are provided to an exposure dose modulator wherein they are applied to forming the pattern. Thus corrections for both long range and short range proximity effects due to both electron scattering and heating as well as for proximity effects due to global thermal expansion can be calculated and provided during run-time and a corrected pattern exposed.

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