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1. 发明公开

EP2581906A3 Reader stop layers 审中-公开
标题翻译： Leserstoppschichten
公开(公告)号：EP2581906A3
公开(公告)日：2015-04-22
申请号：EP12188430.8
申请日：2012-10-12
申请人： Seagate Technology LLC
发明人： Van Dorn, Carolyn Pitcher , Boonstra, Thomas Roy
IPC分类号： G11B5/31 , G11B5/11 , G11B5/39 , G11B5/40
CPC分类号： G11B5/39 , G11B5/11 , G11B5/112 , G11B5/3169 , G11B5/3912 , G11B5/40 , Y10T428/1121 , Y10T428/1164
摘要： Tolerances for manufacturing reader structures for transducer heads continue to grow smaller and storage density in corresponding storage media increases. Reader stop layers may be utilized during manufacturing of reader structures to protect various layers of the reader structure from recession and/or scratches while processing other non-protected layers of the reader structure. For example, the stop layer may have a very low polish rate during mechanical or chemical-mechanical polishing. Surrounding areas may be significantly polished while a structure protected by a stop layer with a very low polish rate is substantially unaffected. The stop layer may then be removed via etching, for example, after the mechanical or chemical-mechanical polishing is completed.
摘要翻译：用于传感器头的制造读取器结构的公差继续增长，并且相应存储介质中的存储密度增加。在读取器结构的制造期间可以利用读取器停止层来保护读取器结构的各个层免于衰退和/或划痕，同时处理读取器结构的其它未受保护的层。例如，停止层在机械或化学机械抛光期间可能具有非常低的抛光速率。可以显着地抛光周围区域，而由具有非常低的抛光速率的停止层保护的结构基本上不受影响。然后可以通过蚀刻，例如在机械或化学机械抛光完成之后去除停止层。

2. 发明公开

EP2660818A1 Stack with wide seed layer 审中-公开
标题翻译： Stapel mitgroßerKeimschicht
公开(公告)号：EP2660818A1
公开(公告)日：2013-11-06
申请号：EP13166065.6
申请日：2013-04-30
申请人： Seagate Technology LLC
发明人： Singleton, Eric Walter , Yi, Jae-Young , Nikolaev, Konstantin , Sapozhnikov, Victor Boris , Wakeham, Stacey Christine , Mckinley, Shaun Eric
IPC分类号： G11B5/39 , G01R33/09 , H01L43/08
CPC分类号： G11B5/3906 , G01R33/093 , G11B5/3909 , G11B5/3912 , G11B5/3932 , G11B5/398 , H01L43/08 , Y10T428/1114 , Y10T428/1121 , Y10T428/1143
摘要： A stack having a seed layer structure with a first part having a first cross-track width and a free layer deposited over the seed layer structure and with a second cross-track width, wherein the first cross-track width is greater than the second cross-track width. In one implementation, the seed layer structure further comprises an antiferromagnetic (AFM) layer and a synthetic antiferromagnetic (SAF) layer. In one alternate implementation, the cross-track width of the seed layer structure is substantially equal to the combined cross-track width of the free layer and cross-track width of two permanent magnets.
摘要翻译：具有种子层结构的堆叠，其第一部分具有第一交叉轨道宽度和沉积在种子层结构上并且具有第二交叉轨道宽度的自由层，其中第一交叉轨道宽度大于第二交叉曲线宽度在一个实施方案中，种子层结构还包括反铁磁（AFM）层和合成反铁磁（SAF）层。在一个替代实施方案中，种子层结构的交叉轨道宽度基本上等于两个永磁体的自由层的组合交叉轨道宽度和交叉轨道宽度。

3. 发明授权

EP1943727B1 RADIO-FREQUENCY OSCILLATOR WITH SPIN-POLARISED ELECTRIC CURRENT 有权
标题翻译：自旋极化的电力高频振荡器
公开(公告)号：EP1943727B1
公开(公告)日：2009-04-08
申请号：EP06832165.2
申请日：2006-10-31
申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE , Centre National De La Recherche Scientifique
发明人： DIENY, Bernard , DEAC-RENNER, Alina-Maria
IPC分类号： H03B15/00 , H01F10/32 , H01L43/08
CPC分类号： H01L43/08 , B82Y25/00 , H01F10/3268 , H03B15/006 , Y10T428/1121
摘要： This radio-frequency oscillator includes a magnetoresistive device in which a spin-polarised electric current flows. This device comprises a stack of at least: a first so-called 'anchored' magnetic layer (1) having a fixed magnetisation direction, a second magnetic layer (2), an amagnetic layer (3) inserted between the above-mentioned two layers, intended to ensure magnetic decoupling of said layers. The oscillator also comprises means of causing a flow of electrons in said layers perpendicular to these layers and, if applicable, of applying an external magnetic field to the structure. The second magnetic layer (2) has an excitation damping factor at least 10% greater than the damping measured in a simple layer of the same material having the same geometry for magnetic excitation having wavelengths equal to or less than the extent of the cone or cylinder of current that flows through the stack that constitutes the magnetoresistive device.

4. 发明公开

EP1857829A2 Magnetic sensor with limited element width 审中-公开
标题翻译： Magnetischer Sensor mitbeschränkterElementbreite
公开(公告)号：EP1857829A2
公开(公告)日：2007-11-21
申请号：EP07006261.7
申请日：2007-03-27
申请人： ALPS ELECTRIC CO., LTD.
发明人： Sasaki, Yoshito
IPC分类号： G01R33/00
CPC分类号： G01R33/07 , B82Y25/00 , G01R33/093 , Y10T428/1121 , Y10T428/1143
摘要： Particularly, there is provided a magnetic sensor capable of preventing an occurrence of a chattering or the like to provide a stable operation and easily controlling a magnetic sensitivity depending on applications. The magneto-resistance element 8 is formed in a slender and longitudinal shape in which an element length L is greater than an element width W and the element width W is in the range of 1 µm to 5 µm. The element length L is in the range of 50 µm to 250 µm. Owing to the result, it is possible to easily control a coercive force Hc of the free layer with required magnitude. In addition, the coercive force Hc may be in the range of 5 Oe to 10 Oe (about 395 A/m to 790 A/m) by setting the element width W in the range of 1 µm to 5 µm.
摘要翻译：特别地，提供了一种磁传感器，其能够防止发生抖动等以提供稳定的操作并且根据应用容易地控制磁敏感度。磁阻元件8以元件长度L大于元件宽度W并且元件宽度W在1μm至5μm的范围内形成为细长且纵向的形状。元件长度L在50μm至250μm的范围内。因此，可以容易地以所需的大小控制自由层的矫顽力Hc。此外，通过将元件宽度W设定在1μm至5μm的范围内，矫顽力Hc可以在5Oe至10Oe（约395A / m至790A / m）的范围内。

5. 发明授权

EP1248264B1 Magnetoresistive element, memory element having the magnetoresistive element, and memory using the memory element 有权
标题翻译：磁阻元件，其具有存储元件，例如磁阻元件，以及使用这种存储元件的存储器
公开(公告)号：EP1248264B1
公开(公告)日：2007-11-14
申请号：EP02007503.2
申请日：2002-04-02
申请人： CANON KABUSHIKI KAISHA
发明人： Ikeda, Takashi, c/o Canon Kabushiki Kaisha , Koganei, Akio, c/o Canon Kabushiki Kaisha , Okano, Kazuhisa, c/o Canon Kabushiki Kaisha
IPC分类号： G11C11/16
CPC分类号： G11C11/16 , Y10T428/1107 , Y10T428/1121 , Y10T428/1143 , Y10T428/12465 , Y10T428/12986 , Y10T428/24942

6. 发明授权

EP1124273B1 Magnetoresistive multilayered film, magnetoresistive head, and information regeneration apparatus 有权
标题翻译：磁阻多层薄膜磁阻磁头和信息再现装置
公开(公告)号：EP1124273B1
公开(公告)日：2007-04-11
申请号：EP00310053.4
申请日：2000-11-13
申请人： FUJITSU LIMITED
发明人： Jongill, Hong, c/o Fujitsu Limited , Aoshima, Kenichi, c/o Fujitsu Limited , Noma, Kenji, c/o Fujitsu Limited , Kane, Junichi, c/o Fujitsu Limited , Kanai, Hitoshi, c/o Fujitsu Limited
IPC分类号： H01L43/08 , H01F10/32 , G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G11B5/3903 , G11B2005/3996 , H01F10/3268 , H01F41/302 , H01F41/325 , H01L43/08 , H01L43/12 , Y10S428/911 , Y10T428/1114 , Y10T428/1121

7. 发明授权

EP0710390B1 MAGNETIC STRUCTURE WITH STRATIFIED LAYERS 失效
标题翻译：层叠式结构
公开(公告)号：EP0710390B1
公开(公告)日：2001-06-20
申请号：EP94923390.2
申请日：1994-07-15
申请人： NONVOLATILE ELECTRONICS, INCORPORATED
发明人： DAUGHTON, James, M.
IPC分类号： G11B5/66 , G11B5/127 , G11B5/147 , H01F1/00 , B32B15/00 , B32B15/20 , G01R33/02 , H01F10/08 , H01L43/08 , G01R33/09 , G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3906 , G11B2005/3996 , G11C11/15 , H01F10/32 , H01F10/324 , H01F10/3254 , H01F10/3268 , H01L43/08 , Y10S428/90 , Y10T428/1121 , Y10T428/12611 , Y10T428/12625 , Y10T428/26 , Y10T428/265

8. 发明公开

EP1055132A1 CAPTEUR DE CHAMP MAGNETIQUE A MAGNETORESISTANCE GEANTE 审中-公开
标题翻译：巨磁阻磁变压器
公开(公告)号：EP1055132A1
公开(公告)日：2000-11-29
申请号：EP99958303.2
申请日：1999-12-10
申请人： THOMSON-CSF
发明人： Nguyen van Dau, Frédéric,Thomson-CSF Prop. Intel. , Schuhl, Alain,Thomson-CSF Prop. Intel. , Encinas, Armando,Thomson-CSF Prop. Intel.
IPC分类号： G01R33/09
CPC分类号： B82Y25/00 , G01R33/093 , Y10T428/1121
摘要： The invention concerns a magnetic sensor comprising first and second elements (1, 2) in thin magnetic material layers with magnetic anisotropy in the plane having in said plane two easy magnetisation axes. The coercitive field of one of the elements is of a different value from that of the other element. The two elements have mutually parallel elongated shapes perpendicular to their easy magnetisation direction in the absence of an external magnetic field. The width of said elements is such that it compels at least one of the elements to have its magnetisation oriented along the length of the element in the absence of external magnetic field. The invention is useful for measuring magnetic field.

9. 发明公开

EP0797187A2 Spin valve magnetoresistive transducers having permanent magnets 失效
标题翻译：磁阻电磁阀
公开(公告)号：EP0797187A2
公开(公告)日：1997-09-24
申请号：EP97104638.8
申请日：1997-03-18
申请人： READ-RITE CORPORATION
发明人： Ravipati, Durga P.
IPC分类号： G11B5/39 , G01R33/09
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , Y10T428/1121 , Y10T428/12861
摘要： A spin valve magnetoresistive sensor includes a substrate (1) and a layered structure formed on the substrate. The layered structure includes a pair of thin film layers (5, 12) of ferromagnetic material separated from each other by a nonmagnetic spacer. The direction of magnetization of one of the thin film layers is pinned by a first permanent magnet layer (6). A second permanent magnet layer (10) is located adjacent to the other of the thin film layers for longitudinal biasing purposes. The first permanent magnet layer (6) has significantly higher coercivity than the second permanent magnet layer (10).
摘要翻译：自旋阀磁阻传感器包括基板（1）和形成在基板上的分层结构。层状结构包括一对由非磁性间隔物彼此分离的铁磁材料薄膜层（5,12）。薄膜层之一的磁化方向由第一永磁体层（6）固定。为了纵向偏置目的，第二永磁体层（10）位于另一个薄膜层附近。第一永磁体层（6）具有比第二永磁体层（10）显着更高的矫顽力。

10. 发明公开

EP0717422A1 Exchange coupling film and magnetoresistive element 失效
标题翻译： Dünnschichtmit Wechselkupplung und magnetoresistives元素
公开(公告)号：EP0717422A1
公开(公告)日：1996-06-19
申请号：EP95309058.6
申请日：1995-12-13
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Fuke, Hiromi, , Kamiguchi, Yuuzo , Hashimoto, Susumu , Funayama, Tomomi , Saito, Kazuhiro , Iwasaki, Hitoshi , Sahashi, Masashi
IPC分类号： H01F10/08 , H01L43/08 , G01R33/09 , G11B5/39
CPC分类号： B82Y25/00 , G01R33/093 , G11B5/399 , H01F10/3218 , H01F10/3268 , H01L43/10 , Y10T428/1121 , Y10T428/12861 , Y10T428/263
摘要： An exchange coupling film comprises a ferromagnetic film and an antiferromagnetic film laminated on the ferromagnetic film, wherein at least a portion of the antiferromagnetic film has a face-centered cubic crystal structure and the antiferromagnetic film comprises an IrMn alloy represented by the general formula of Ir x Mn 100-x , wherein x stands for a value by atomic % satisfying the expression, 2 ≦ x ≦ 80.
摘要翻译：交换耦合膜包括层叠在铁磁膜上的铁磁膜和反铁磁膜，其中反铁磁膜的至少一部分具有面心立方晶体结构，反铁磁膜包括由通式IrxMn100表示的IrMn合金 -x，其中x表示满足表达式的原子％的值，2

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