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1. 发明公开

EP3300080A1 MAGNETIC RECORDING MEDIUM 有权
标题翻译：磁记录介质
公开(公告)号：EP3300080A1
公开(公告)日：2018-03-28
申请号：EP16796091.3
申请日：2016-05-12
申请人： Sony Corporation
发明人： SEKIGUCHI, Noboru , OZAKI, Tomoe , ENDO, Tetsuo , AIZAWA, Takashi , TACHIBANA, Junichi , TERUI, Hikaru , SAI, Teruo
IPC分类号： G11B5/733 , G11B5/65 , G11B5/66
摘要： A magnetic recording medium has a recording surface having an average surface roughness SRa of 3.0 µm or less, the number of projections having a height of 7.5 nm or more included in a unit region (where the unit region is a square region with each side having a length of 30 µm) of the recording surface is 256 or more, and the number of projections having a height of 15 nm or more included in the unit region of the recording surface is 0 or more and 104 or less.
摘要翻译：磁记录介质具有平均表面粗糙度SRa为3.0μm以下的记录面，单位区域所包含的高度为7.5nm以上的突起数（单位区域为正方形区域，记录表面的长度为30μm）为256或更大，记录表面的单位区域中包括的具有15nm或更大的高度的突起的数量为0以上且104以下。

2. 发明公开

EP2808869A3 Magnetic material structures, devices and methods 审中-公开
标题翻译： Magnetische Materialstrukturen，Vorrichtungen und Verfahren
公开(公告)号：EP2808869A3
公开(公告)日：2014-12-17
申请号：EP14175160.2
申请日：2002-08-29
申请人： Lambeth Magnetic Structures, LLC
发明人： Lambeth, David N.
IPC分类号： G11B5/64 , G11B5/66 , G11B5/667 , G11B5/673 , B82Y40/00 , C23C14/22 , B82Y10/00 , B82Y25/00 , C23C14/35 , C30B23/02 , C30B29/52 , G11B5/39 , G11B5/73 , G11B5/851 , H01F10/28 , H01F10/32 , H01F41/30 , G11B5/31 , H01F10/08
CPC分类号： C23C14/225 , B82Y10/00 , B82Y25/00 , B82Y40/00 , C23C14/228 , C23C14/35 , C30B23/02 , C30B29/52 , G11B5/3109 , G11B5/3903 , G11B5/3909 , G11B5/66 , G11B5/667 , G11B5/7325 , G11B5/851 , H01F10/08 , H01F10/28 , H01F41/303
摘要： A magnetic material structure comprising a substrate; at least one (110) textured bcc-d layer which is magnetic, forming a uniaxial symmetry broken structure, and having a magnetocrystaline anisotropy energy density constant K 1 > 0 or K 1
摘要翻译：一种磁性材料结构，包括基底; 至少一个（110）纹理的bcc-d层，其是磁性的，形成单轴对称断裂结构，并且具有磁性各向异性能量密度常数K 1> 0或K 1 <0; 提供设置在所述基底和所述bcc层之间的（111）纹理六边形原子模板的至少一层; 其中所述六方晶原子模板由fcc-d或hcp结晶材料形成并且紧密堆积。

3. 发明公开

EP2782095A1 ELECTRIC FIELD WRITE-TYPE MAGNETIC RECORDING DEVICE 有权
标题翻译： EINEM ELEKTRISCHEN FELD的MAGNETAUFZEICHNUNGSVORRICHTUNG MIT SCHREIBUNG
公开(公告)号：EP2782095A1
公开(公告)日：2014-09-24
申请号：EP12849457.2
申请日：2012-10-31
申请人： Akita University
发明人： YOSHIMURA Satoru , SAITO Hitoshi
IPC分类号： G11B5/02 , G11B5/66 , G11B5/82
CPC分类号： G11B5/09 , G11B5/64 , G11B9/02 , G11B11/26 , G11B2005/0005
摘要： An electric field writing magnetic storage device including: a rotatable disk including a substrate and a magnetic recording film provided on a surface of the substrate, the magnetic recording film including at least one ferromagnetic and ferroelectric layer; a writing device writing information into the magnetic recording film by means of an electric field, the writing device including a writing electrode generating a dielectric flux between the writing electrode and the substrate by having electric potential to the substrate; and a writing circuit choosing one electric potential among plurality of electric potential level and applying the chosen one electric potential to the writing electrode in every operation of writing information, wherein the dielectric flux generated according to the electric potential applied to the writing electrode by the writing circuit magnetizes the ferromagnetic and ferroelectric layer in a specific direction.
摘要翻译：一种电场写入磁存储装置，包括：包括设置在所述基板的表面上的基板和磁记录膜的可旋转盘，所述磁记录膜包括至少一个铁磁层和铁电层; 写入装置通过电场将信息写入到磁记录膜中，所述写入装置包括：写入电极，通过对所述基板具有电位而在所述写入电极和所述基板之间产生介电磁通; 以及写入电路，其在多个电位电平中选择一个电位，并且在写入信息的每个操作中将所选择的一个电位施加到写入电极，其中根据通过写入施加到写入电极的电位产生的介电通量电路沿特定方向磁化铁磁层和铁电层。

4. 发明公开

EP2374131A1 SPIN-TORQUE BIT CELL WITH UNPINNED REFERENCE LAYER AND UNIDIRECTIONAL WRITE CURRENT 有权
标题翻译：自旋力矩位单元UNGEPINNTER参考层与单向写入功率
公开(公告)号：EP2374131A1
公开(公告)日：2011-10-12
申请号：EP09798985.9
申请日：2009-12-02
申请人： Seagate Technology LLC
发明人： REED, Daniel , LU, Yong , XUE, Song , ANDERSON, Paul
IPC分类号： G11C11/16 , G01R33/00 , G11B5/66 , H01F10/32
CPC分类号： H01F10/329 , B82Y25/00 , G01R33/098 , G01R33/1284 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01F10/3254
摘要： Method and apparatus for using a uni-directional write current to store different logic states in a non-volatile memory cell, such as a modified STRAM cell. In some embodiments, the memory cell has an unpinned ferromagnetic reference layer adjacent a cladded conductor, a ferromagnetic storage layer and a tunneling barrier between the reference layer and the storage layer. Passage of a current along the cladded conductor induces a selected magnetic orientation in the reference layer, which is transferred through the tunneling barrier for storage by the storage layer. Further, the orientation of the applying step is provided by a cladding layer adjacent a conductor along which a current is passed and the current induces a magnetic field in the cladding layer of the selected magnetic orientation.

5. 发明公开

EP2277175A2 VORRICHTUNG UND VERFAHREN ZUR ERZEUGUNG VON SCHALTBAREM TEMPORÄREM MAGNETISMUS IN OXIDISCHEN MATERIALIEN MITTELS ELEKTRISCHER FELDER 有权
标题翻译：装置及方法氧化物材料BY电场PRODUCING切换临时MAGNETISM
公开(公告)号：EP2277175A2
公开(公告)日：2011-01-26
申请号：EP09732681.3
申请日：2009-03-25
申请人： Technische Universität Dresden
发明人： MEYER, Dirk , LEISEGANG, Tilmann , STOECKER, Hartmut
IPC分类号： G11C11/14 , G01R33/09 , G11B5/66 , G11C13/02 , H01F10/32 , H01L27/22
CPC分类号： G11C11/14 , B82Y25/00 , G01R33/093 , H01F10/18 , H01F10/193
摘要： The invention relates to a method and to an apparatus for producing switchable temporary magnetism in oxidic materials by means of electrical fields, wherein on two opposing surfaces (11, 12) of the oxidic material (1, 2, 3) at least one electrode (21, 22) each is attached, wherein upon applying an electrical potential difference the oxidic material (1, 2, 3) is superimposed with the electrical field (E) and thereby an oxide material arrangement (13) is present, wherein oxygen vacancies, which are already present in the oxidic material (1, 2, 3), are redistributed in the oxidic material (1, 2, 3) when applying the electrical field (E), and thus a gradient of the oxygen concentration develops, wherein in the cathode region (14) of the oxidic material (1, 2, 3) an oxygen vacancy zone (4) is created, which results in a valence change of the cations such that magnetic moments can be produced. The object is to temporarily produce, at room temperature, magnetism in an oxidic material by way of an electrical field (E), which leads to macroscopic applications and functional elements. The solution is that at least one device (15, 20) for detecting the magnetism that forms in the oxygen vacancy zone (4) due to the applied electrical field (E) and that can be registered is arranged directly outside the cathode region (14) of the oxidic material (1, 2, 3), wherein in the oxygen vacancy zone (4) the valence of the cations of the oxidic material (1, 2, 3) decreases if the oxygen vacancy concentration increases, and increases if the oxygen vacancy concentration decreases, wherein a reduction in the valence of the cations in the oxidic material (1, 2, 3) produces magnetic moments (19), which may be present either in a disorganized manner, thereby rendering the oxidic material (1, 2, 3) paramagnetic, or which couple with each other, thereby rendering the oxidic material (1, 2, 3) either ferromagnetic, ferrimagnetic, or antiferromagnetic, and wherein by switching the electrical field (E) the respective magnetism in the oxide material arrangement (13) can be reversibly switched and the original state can be restored without magnetic moments.

6. 发明公开

EP1571713A4 SPIN INJECTION DEVICE, MAGNETIC DEVICE USING THE SAME, MAGNETIC THIN FILM USED IN THE SAME 审中-公开
标题翻译： - 旋转喷射装置中，磁性器件与它们的用途，其中使用磁性薄膜
公开(公告)号：EP1571713A4
公开(公告)日：2009-07-01
申请号：EP03778828
申请日：2003-12-11
申请人： JAPAN SCIENCE & TECH AGENCY
发明人： INOMATA KOUICHIRO , TEZUKA NOBUKI
IPC分类号： H01F10/16 , G11B5/39 , G11B5/64 , G11B5/66 , G11B5/73 , G11C11/16 , H01F10/32 , H01L27/105 , H01L29/82 , H01L43/08
CPC分类号： H01F10/1936 , B82Y10/00 , B82Y25/00 , G11B5/3903 , G11B5/3906 , G11B5/3909 , G11B5/656 , G11B5/66 , G11B5/7325 , G11B2005/3996 , G11C11/16 , H01F10/3254 , H01F10/3268 , H01L43/08
摘要： A spin injection device capable of spin injection magnetization reverse with a small current density, a magnetic device using it, and a magnetic thin film used in these. The spin injection device (14) includes: a spin injection section (1) consisting of a spin polarization section (9) containing a ferromagnetic fixed layer (26) and a non-magnetic layer injection junction section (7); and a ferromagnetic free layer (27) arranged adjacent to the spin injection section (1). The non-magnetic layer (7) is composed of an insulator (12) or a conductor (25). On the surface of the ferromagnetic free layer (27), a non-magnetic layer (28) is provided. Electric current is applied in the vertical direction to the film surface of the spin injection device (14) so as to reverse the magnetization of the ferromagnetic free layer (27). This invention can be applied to an ultra-giga bit large-capacity high-speed non-volatile MRAM and various other magnetic devices and magnetic memory devices.

7. 发明授权

EP1553565B1 Magnetic recording medium and a method for its manufacture 有权
标题翻译：其制备方法，一种磁记录介质和工艺
公开(公告)号：EP1553565B1
公开(公告)日：2008-10-22
申请号：EP03816161.8
申请日：2003-03-05
申请人： FUJITSU LIMITED
发明人： MUKAI, Ryoichi, c/o Fujitsu Limited
IPC分类号： G11B5/851 , G11B5/84 , G11B5/738 , G11B5/65 , G11B5/66
CPC分类号： G11B5/7325 , G11B5/656 , G11B5/66 , G11B5/84 , H01F10/30
摘要： A multilayer structure film comprising first base crystal layer (33) composed of crystal grains adjacent to each other and second base crystal layer (34) whose thickness is greater than that of the first base crystal layer (33), extending over the upper surface of the first base crystal layer (33). The second base crystal layer (34) is composed of crystal grains having grown from individual crystal grains of the first base crystal layer (33). In the first and second base crystal layers (33, 35), fine uniform crystal grains are established. Moreover, in the first and second base crystal layers (33, 35), satisfactory layer thickness can be ensured. The multilayer structure film further comprises first and second magnetic crystal layers (35, 36) wherein fine uniform crystal grains are established. Moreover, in the first and second magnetic crystal layers (35, 36), satisfactory layer thickness can be ensured.

8. 发明授权

EP1045403B1 Magnetoresistance device 有权
标题翻译：磁致电阻元件
公开(公告)号：EP1045403B1
公开(公告)日：2008-07-09
申请号：EP00303165.5
申请日：2000-04-14
申请人： CANON KABUSHIKI KAISHA
发明人： Ikeda, Takashi, c/o Canon Kabushiki Kaisha
IPC分类号： H01F10/32 , H01L43/08 , G11B5/39 , G11C11/16 , G11B5/66
CPC分类号： H01F10/3268 , B82Y10/00 , B82Y25/00 , G11B5/3903 , G11B5/66 , G11B2005/3996 , H01L43/08 , Y10T428/1121 , Y10T428/24942 , Y10T428/24975 , Y10T428/256

9. 发明公开

EP1406247A4 VERTICAL RECORDING TYPE MAGNETIC RECORDING MEDILIM AND MAGNETIC MEMORY DEVICE USING THE MEDIUM 有权
标题翻译：记录介质上记录的垂直磁式和磁存储设备与介质
公开(公告)号：EP1406247A4
公开(公告)日：2007-08-29
申请号：EP01932224
申请日：2001-05-23
申请人： FUJITSU LTD
发明人： INAMURA RYOSAKU , SHIMODA KAZUMASA , SUGIMOTO TOSHIO , UZUMAKI TAKUYA
IPC分类号： G11B5/00 , G11B5/012 , G11B5/66 , G11B5/667 , G11B5/73 , G11B5/82 , G11B5/02 , G11B11/10
CPC分类号： G11B5/7325 , G11B5/00 , G11B5/012 , G11B5/02 , G11B5/64 , G11B5/66 , G11B5/82 , G11B2005/0002 , G11B2005/0021 , G11B2005/0029
摘要： A vertical recording type magnetic recording medium which includes at least a vertical magnetic recording layer and a backing layer which backs the vertical magnetic recording layer and is magnetized in a direction toward the inside of the surface. The backing layer is made of ferromagnetic materia1 which has a compensation temperature in the neighborhood of a recording/reproducing temperature at which magnetic information, recorded in the vertica1 magnetic recording layer, is reproduced.

10. 发明授权

EP1453038B1 Magnetic recording media with write-assist layer 有权
标题翻译：磁记录材料含有一个写辅助层
公开(公告)号：EP1453038B1
公开(公告)日：2007-02-28
申请号：EP03255442.0
申请日：2003-09-01
申请人： Hitachi Global Storage Technologies Netherlands B.V.
发明人： Berger, Andreas K. D. Hitachi Global Storage Tech , Do, Hoa Van Hitachi Global Storage Tech , Fullerton, Eric E. Hitachi Global Storage Tech
IPC分类号： G11B5/66
CPC分类号： G11B5/66

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