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    • 5. 发明公开
    • POLYCRYSTALLINE GALLIUM-NITRIDE SELF-SUPPORTING SUBSTRATE AND LIGHT-EMITTING ELEMENT USING SAME
    • SEL IT IT IT IT IT IT IT IT IT IT IT IT IT IT IT IT IT IT IT IT IT
    • EP3128562A1
    • 2017-02-08
    • EP15773888.1
    • 2015-03-23
    • NGK Insulators, Ltd.
    • WATANABE MorimichiYOSHIKAWA JunKURAOKA YoshitakaNANATAKI Tsutomu
    • H01L33/16C30B29/38H01L33/32
    • H01L33/32C30B9/12C30B19/02C30B19/12C30B25/18C30B28/04C30B29/38C30B29/406C30B29/605H01L33/16
    • Provided is a self-supporting polycrystalline gallium nitride substrate composed of a plurality of gallium nitride-based single crystal grains having a specific crystal orientation in a direction approximately normal to the substrate. In this self-supporting substrate, the crystal orientations of individual gallium nitride-based single crystal grains as determined from inverse pole figure mapping by electron backscatter diffraction (EBSD) analysis performed on the substrate surface are distributed with various tilt angles from the specific crystal orientation, and the average tilt angle thereof is 1 to 10°. Moreover, the light emitting device of the present invention comprises the foregoing self-supporting substrate and a light emitting functional layer formed on the substrate, wherein the light emitting functional layer has at least one layer composed of a plurality of semiconductor single crystal grains, wherein the at least one layer has a single crystal structure in the direction approximately normal to the substrate. According to the present invention, it is possible to provide a self-supporting polycrystalline gallium nitride substrate having a reduced defect density at the substrate surface. Also, it is possible to provide a light emitting device having a high luminous efficiency by using the self-supporting polycrystalline gallium nitride substrate of the present invention.
    • 提供一种自支撑多晶氮化镓衬底,其由在与衬底大致垂直的方向上具有特定晶体取向的多个氮化镓基单晶晶粒组成。 在该自支撑基板中,通过在基板表面上进行的电子背散射衍射(EBSD)分析的反极图映射确定的单个氮化镓基单晶晶粒的晶体取向以特定晶体取向的各种倾斜角分布 ,其平均倾斜角为1〜10°。 此外,本发明的发光器件包括上述自支撑衬底和形成在衬底上的发光功能层,其中发光功能层具有由多个半导体单晶晶粒组成的至少一层,其中 该至少一层在大致垂直于衬底的方向上具有单晶结构。 根据本发明,可以提供在衬底表面上具有降低的缺陷密度的自支撑多晶氮化镓衬底。 此外,通过使用本发明的自支撑多晶氮化镓基板,可以提供具有高发光效率的发光装置。