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1. 发明公开

EP3211657A3 METHOD FOR MANUFACTURING DIAMOND SUBSTRATE, DIAMOND SUBSTRATE, AND FREESTANDING DIAMOND SUBSTRATE 审中-实审转让
公开(公告)号：EP3211657A3
公开(公告)日：2017-11-15
申请号：EP17000294.3
申请日：2017-02-23
申请人： Shin-Etsu Chemical Co., Ltd. , National Institute of Advanced Industrial Science and Technology , National University Corporation Kanazawa University
发明人： Noguchi, Hitoshi , Shirai, Shozo , Makino, Toshiharu , Ogura, Masahiko , Kato, Hiromitsu , Kawashima, Hiroyuki , Kuwabara, Daisuke , Yamasaki, Satoshi , Takeuchi, Daisuke , Tokuda, Norio , Inokuma, Takao , Matsumoto, Tsubasa
IPC分类号： H01L21/02
CPC分类号： C30B25/04 , C30B25/186 , C30B25/20 , C30B29/04 , H01L21/02057 , H01L21/02085 , H01L21/02376 , H01L21/02527 , H01L21/0262 , H01L21/3065 , H01L21/3086 , H01L29/1602
摘要： The present invention provides a method for manufacturing a diamond substrate, including: a first step of preparing patterned diamond on a foundation surface, a second step of growing diamond from the patterned diamond prepared in the first step to form the diamond in a pattern gap of the patterned diamond prepared in the first step, a third step of removing the patterned diamond prepared in the first step to form a patterned diamond composed of the diamond formed in the second step, and a fourth step of growing diamond from the patterned diamond formed in the third step to form the diamond in a pattern gap of the patterned diamond formed in the third step. There can be provided a method for manufacturing a diamond substrate which can sufficiently suppress dislocation defects, a high-quality diamond substrate, and a freestanding diamond substrate.

2. 发明公开

EP3211657A2 METHOD FOR MANUFACTURING DIAMOND SUBSTRATE, DIAMOND SUBSTRATE, AND FREESTANDING DIAMOND SUBSTRATE 审中-实审转让
标题翻译：制造金刚石衬底，金刚石衬底和自由浇铸金刚石衬底的方法
公开(公告)号：EP3211657A2
公开(公告)日：2017-08-30
申请号：EP17000294.3
申请日：2017-02-23
申请人： Shin-Etsu Chemical Co., Ltd. , National Institute of Advanced Industrial Science and Technology , National University Corporation Kanazawa University
发明人： Noguchi, Hitoshi , Shirai, Shozo , Makino, Toshiharu , Ogura, Masahiko , Kato, Hiromitsu , Kawashima, Hiroyuki , Kuwabara, Daisuke , Yamasaki, Satoshi , Takeuchi, Daisuke , Tokuda, Norio , Inokuma, Takao , Matsumoto, Tsubasa
IPC分类号： H01L21/02
CPC分类号： C30B25/04 , C30B25/186 , C30B25/20 , C30B29/04 , H01L21/02057 , H01L21/02085 , H01L21/02376 , H01L21/02527 , H01L21/0262 , H01L21/3065 , H01L21/3086 , H01L29/1602
摘要： The present invention provides a method for manufacturing a diamond substrate, including: a first step of preparing patterned diamond on a foundation surface, a second step of growing diamond from the patterned diamond prepared in the first step to form the diamond in a pattern gap of the patterned diamond prepared in the first step, a third step of removing the patterned diamond prepared in the first step to form a patterned diamond composed of the diamond formed in the second step, and a fourth step of growing diamond from the patterned diamond formed in the third step to form the diamond in a pattern gap of the patterned diamond formed in the third step. There can be provided a method for manufacturing a diamond substrate which can sufficiently suppress dislocation defects, a high-quality diamond substrate, and a freestanding diamond substrate.
摘要翻译：本发明提供了一种制造金刚石基材的方法，包括：第一步：在基础表面上制备图案化的金刚石;第二步：从第一步骤中制备的图案化的金刚石生长金刚石，以形成图案间隙为在第一步骤中制备的图案化金刚石，去除在第一步骤中制备的图案化金刚石以形成由在第二步骤中形成的金刚石组成的图案化金刚石的第三步骤，以及从图案化金刚石形成于在第三步骤中形成的图案化金刚石的图案间隙中形成金刚石的第三步骤。可以提供一种能够充分抑制位错缺陷的金刚石基板的制造方法，高质量的金刚石基板和独立式金刚石基板。

3. 发明公开

EP3211658A1 METHOD FOR MANUFACTURING DIAMOND SUBSTRATE 有权
标题翻译：制造金刚石衬底的方法
公开(公告)号：EP3211658A1
公开(公告)日：2017-08-30
申请号：EP17000295.0
申请日：2017-02-23
申请人： Shin-Etsu Chemical Co., Ltd. , National Institute of Advanced Industrial Science and Technology , National University Corporation Kanazawa University
发明人： Noguchi, Hitoshi , Shirai, Shozo , Makino, Toshiharu , Ogura, Masahiko , Kato, Hiromitsu , Kawashima, Hiroyuki , Kuwabara, Daisuke , Yamasaki, Satoshi , Takeuchi, Daisuke , Tokuda, Norio , Inokuma, Takao , Matsumoto, Tsubasa
IPC分类号： H01L21/02
CPC分类号： C30B25/186 , C30B25/04 , C30B25/20 , C30B29/04 , H01L21/02376 , H01L21/02527 , H01L21/0262 , H01L21/02647 , H01L21/02658 , H01L21/3065 , H01L21/3081 , H01L29/1602
摘要： The present invention provides a method for manufacturing a diamond substrate, including: a first step of preparing patterned diamond on a foundation surface, a second step of removing a foreign substance adhered on a wall of the patterned diamond prepared in the first step, and a third step of growing diamond from the patterned diamond prepared in the first step to form the diamond in a pattern gap of the patterned diamond prepared in the first step. There can be provided a method for manufacturing a diamond substrate with few dislocation defects, in which generation of abnormal growth particles are suppressed.
摘要翻译：本发明提供一种金刚石基板的制造方法，其包括：第一工序，在基础表面上准备图案金刚石;第二工序，除去附着在第一工序中准备的图案金刚石的壁上的异物;以及第三步从第一步骤中制备的图案化金刚石生长金刚石，以在第一步骤中制备的图案化金刚石的图案间隙中形成金刚石。可以提供一种用于制造具有少量位错缺陷的金刚石基板的方法，其中抑制了异常生长颗粒的产生。

4. 发明公开

EP3358049A1 FOUNDATION SUBSTRATE FOR PRODUCING DIAMOND FILM AND METHOD FOR PRODUCING DIAMOND SUBSTRATE USING SAME 审中-公开
公开(公告)号：EP3358049A1
公开(公告)日：2018-08-08
申请号：EP18155185.4
申请日：2018-02-05
申请人： Shin-Etsu Chemical Co., Ltd. , National Institute of Advanced Industrial Science and Technology , National University Corporation Kanazawa University
发明人： Noguchi, Hitoshi , Makino, Toshiharu , Ogura, Masahiko , Kato, Hiromitsu , Kawashima, Hiroyuki , Yamasaki, Satoshi , Tokuda, Norio
IPC分类号： C30B25/10 , C23C16/27 , C30B25/18 , C30B29/04 , H01L21/00
CPC分类号： C30B25/20 , C23C16/0281 , C23C16/272 , C30B25/105 , C30B25/18 , C30B25/183 , C30B25/186 , C30B29/04 , H01L21/00 , H01L21/0242 , H01L21/0243 , H01L21/02433 , H01L21/02444 , H01L21/02491 , H01L21/02499 , H01L21/02502 , H01L21/02516 , H01L21/02527 , H01L21/0262 , H01L21/02634
摘要： It is an object to provide a method for producing a diamond substrate effective for reducing various defects including dislocation defects and a foundation substrate used for the same. This object is achieved by a foundation substrate for forming a diamond film by a chemical vapor deposition method, wherein an off angle is provided to the surface of the foundation substrate with respect to a predetermined crystal plane orientation.

6. 发明授权

EP2851457B1 Method for manufacturing a single crystal diamond 有权
公开(公告)号：EP2851457B1
公开(公告)日：2018-10-24
申请号：EP14003205.3
申请日：2014-09-16
申请人： National Institute of Advanced Industrial Science and Technology , Shin-Etsu Chemical Co., Ltd.
发明人： Noguchi, Hitoshi , Takeuchi, Daisuke , Yamasaki, Satoshi , Ogura, Masahiko , Kato, Hiromitsu , Makino, Toshiharu , Okushi, Hideyo
IPC分类号： C30B25/10 , C30B25/12 , C30B25/18 , C30B29/04
CPC分类号： C30B25/16 , C30B25/105 , C30B25/12 , C30B25/18 , C30B25/183 , C30B25/186 , C30B29/04
摘要： The present invention provides a method for manufacturing a single crystal diamond in which vapor phase synthetic single crystal diamond is additionally deposited on a single crystal diamond seed substrate obtained by vapor phase synthesis, includes (1) a step of measuring flatness of the seed substrate, (2) a step of determining whether or not to flatten the seed substrate based on the measurement result of the flatness, and (3) any one of the following two steps of (3a) a step of additionally depositing the vapor phase synthetic single crystal diamond after flattening the seed substrate for which the flattening is necessary based on the determination and (3b) a step of additionally depositing the vapor phase synthetic single crystal diamond without flattening the seed substrate for which the flattening is not necessary based on the determination. There can be provided a method for manufacturing a single crystal diamond with high quality in which the vapor phase synthetic single crystal diamond is stably and additionally deposited on the single crystal diamond seed substrate obtained by vapor phase synthesis.

7. 发明公开

EP2851457A1 Method for manufacturing a single crystal diamond 审中-公开
标题翻译： Verfahren zu der Herstellung von einem Diamant-Einkristall
公开(公告)号：EP2851457A1
公开(公告)日：2015-03-25
申请号：EP14003205.3
申请日：2014-09-16
申请人： National Institute of Advanced Industrial Science and Technology , Shin-Etsu Chemical Co., Ltd.
发明人： Noguchi, Hitoshi , Takeuchi, Daisuke , Yamasaki, Satoshi , Ogura, Masahiko , Kato, Hiromitsu , Makino, Toshiharu , Okushi, Hideyo
IPC分类号： C30B25/10 , C30B25/12 , C30B25/18 , C30B29/04
CPC分类号： C30B25/16 , C30B25/105 , C30B25/12 , C30B25/18 , C30B25/183 , C30B25/186 , C30B29/04
摘要： The present invention provides a method for manufacturing a single crystal diamond in which vapor phase synthetic single crystal diamond is additionally deposited on a single crystal diamond seed substrate obtained by vapor phase synthesis, includes (1) a step of measuring flatness of the seed substrate, (2) a step of determining whether or not to flatten the seed substrate based on the measurement result of the flatness, and (3) any one of the following two steps of (3a) a step of additionally depositing the vapor phase synthetic single crystal diamond after flattening the seed substrate for which the flattening is necessary based on the determination and (3b) a step of additionally depositing the vapor phase synthetic single crystal diamond without flattening the seed substrate for which the flattening is not necessary based on the determination.
There can be provided a method for manufacturing a single crystal diamond with high quality in which the vapor phase synthetic single crystal diamond is stably and additionally deposited on the single crystal diamond seed substrate obtained by vapor phase synthesis.
摘要翻译：本发明提供了一种制造单晶金刚石的方法，其中气相合成单晶金刚石另外沉积在通过气相合成获得的单晶金刚石种子基底上，包括（1）测量种子基底的平整度的步骤，（2）基于平坦度的测定结果确定是否平坦化种子基材的步骤，（3）（3a）的以下两个步骤中的任一步骤，另外沉积气相合成单晶基于该测定，使需要平坦化的种子基板平坦化后的金刚石，（3b）基于该判定，不需要对不需要变平的种子基板进行平坦化，来附加地沉积气相合成单晶金刚石的工序。可以提供一种制造高品质的单晶金刚石的方法，其中气相合成单晶金刚石稳定地并且附加地沉积在通过气相合成获得的单晶金刚石种子基底上。

8. 发明公开

EP1139438A2 Method and apparatus for fabricating quantum dot structures 有权
标题翻译：对于量子点结构的制造方法和设备
公开(公告)号：EP1139438A2
公开(公告)日：2001-10-04
申请号：EP01103835.3
申请日：2001-02-16
申请人： MATSUSHITA RESEARCH INSTITUTE TOKYO, INC. , DIRECTOR GENERAL OF NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY, JAPAN MINISTRY OF ECONOMY, TRADE & IND.
发明人： Suzuki, Nobuyasu , Makino, Toshiharu , Yamada, Yuka , Yoshida, Takehito , Seto, Takafumi , Aya, Nobuhiro
IPC分类号： H01L33/00
CPC分类号： B82Y30/00 , B22F9/12 , B22F2998/00 , B22F2999/00 , B82Y10/00 , C23C14/06 , C23C14/228 , C23C14/28 , H01L33/0054 , B22F1/0018 , B22F2202/11
摘要： The present invention is to fabricate a quantum dot functional structure having ultra-fine particles homogeneously distributed in a transparent medium by efficiently fabricating high-purity ultra-fine particles having a single particle diameter and uniform structure and depositing the ultra-fine particles onto a substrate in conjunction with the transparent medium. For these purposes, an apparatus for fabricating a quantum dot functional structure is provided. The apparatus comprises: an ultra-fine particle generating chamber for generating high-purity ultra-fine particles by exciting a semiconductor target with pulsed laser light in a low-pressure rare gas atmosphere, and then by allowing the semiconductor target to be detached or ejected by ablation reaction and condensed and grown in the gas; an ultra-fine particle classifying chamber for classifying the ultra-fine particles; a depositing chamber for depositing the high-purity semiconductor ultra-fine particles and the transparent medium by exciting a transparent medium target with excimer laser light at the same time or alternately when the high-purity semiconductor ultra-fine particles are collected onto the substrate, and by collecting the substance generated through ablation reaction onto the substrate; and a carrier gas exhaust system.

9. 发明授权

EP1139438B1 Method and apparatus for fabricating quantum dot structures 有权
标题翻译：对于量子点结构的制造方法和设备
公开(公告)号：EP1139438B1
公开(公告)日：2010-09-08
申请号：EP01103835.3
申请日：2001-02-16
申请人： Panasonic Corporation , DIRECTOR GENERAL OF NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY, JAPAN MINISTRY OF ECONOMY, TRADE & IND.
发明人： Suzuki, Nobuyasu , Makino, Toshiharu , Yamada, Yuka , Yoshida, Takehito , Seto, Takafumi , Aya, Nobuhiro
IPC分类号： H01L33/00 , C23C14/28 , C23C14/06 , G01N15/02
CPC分类号： B82Y30/00 , B22F9/12 , B22F2998/00 , B22F2999/00 , B82Y10/00 , C23C14/06 , C23C14/228 , C23C14/28 , H01L33/0054 , B22F1/0018 , B22F2202/11

10. 发明公开

EP1139438A3 Method and apparatus for fabricating quantum dot structures 有权
标题翻译： Verfahren und Apparat zur Herstellung von Quantenpunkt-Strukturen
公开(公告)号：EP1139438A3
公开(公告)日：2004-08-25
申请号：EP01103835.3
申请日：2001-02-16
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. , DIRECTOR GENERAL OF NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY, JAPAN MINISTRY OF ECONOMY, TRADE & IND.
发明人： Suzuki, Nobuyasu , Makino, Toshiharu , Yamada, Yuka , Yoshida, Takehito , Seto, Takafumi , Aya, Nobuhiro
IPC分类号： H01L33/00 , C23C14/28 , C23C14/06 , G01N15/02
CPC分类号： B82Y30/00 , B22F9/12 , B22F2998/00 , B22F2999/00 , B82Y10/00 , C23C14/06 , C23C14/228 , C23C14/28 , H01L33/0054 , B22F1/0018 , B22F2202/11
摘要： The present invention is to fabricate a quantum dot functional structure having ultra-fine particles homogeneously distributed in a transparent medium by efficiently fabricating high-purity ultra-fine particles having a single particle diameter and uniform structure and depositing the ultra-fine particles onto a substrate in conjunction with the transparent medium. For these purposes, an apparatus for fabricating a quantum dot functional structure is provided. The apparatus comprises: an ultra-fine particle generating chamber for generating high-purity ultra-fine particles by exciting a semiconductor target with pulsed laser light in a low-pressure rare gas atmosphere, and then by allowing the semiconductor target to be detached or ejected by ablation reaction and condensed and grown in the gas; an ultra-fine particle classifying chamber for classifying the ultra-fine particles; a depositing chamber for depositing the high-purity semiconductor ultra-fine particles and the transparent medium by exciting a transparent medium target with excimer laser light at the same time or alternately when the high-purity semiconductor ultra-fine particles are collected onto the substrate, and by collecting the substance generated through ablation reaction onto the substrate; and a carrier gas exhaust system.
摘要翻译：本发明通过有效地制造具有单一粒径和均匀结构的高纯度超细颗粒并将超细颗粒沉积到基底上来制造具有均匀分布在透明介质中的超细颗粒的量子点功能结构结合透明介质。为了这些目的，提供了一种用于制造量子点功能结构的装置。该装置包括：超细颗粒发生室，用于通过在低压稀有气体气氛中用脉冲激光激发半导体靶，然后通过使半导体靶被分离或喷射而产生高纯度超细颗粒通过消融反应并在气体中冷凝和生长; 用于对超细颗粒进行分级的超细颗粒分级室; 沉积室，用于通过同时激发具有准分子激光的透明介质靶或者当高纯度半导体超细颗粒被收集到基板上时交替沉积高纯度半导体超细颗粒和透明介质，并通过将通过消融反应产生的物质收集到基底上; 和载气排气系统。

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