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2. 发明授权

EP2824070B1 METHOD FOR MANUFACTURING HIGHLY PURE SILICON 有权转让
公开(公告)号：EP2824070B1
公开(公告)日：2018-12-12
申请号：EP12870715.5
申请日：2012-03-08
申请人： Silicio Ferrosolar S.L.
发明人： TOKUMARU , Shinji , HIYOSHI , Masataka , KONDO , Jiro , DOHNOMAE, Hitoshi , KISHIDA , Yutaka , NAKAZAWA , Shigeru , ONOUE , Kozo
IPC分类号： C01B33/037 , C30B11/00 , C30B29/06 , H01L31/0288 , C01B33/021
CPC分类号： C01B33/037 , C01B33/021 , C30B11/002 , C30B11/007 , C30B13/10 , C30B21/00 , C30B29/06 , H01L31/0288
摘要： Provided are: a method for manufacturing highly pure silicon by unidirectional solidification of molten silicon, that can inexpensively and industrially easily manufacture highly pure silicon that has a low oxygen concentration and low carbon concentration and is suitable for applications such as manufacturing solar cells; highly pure silicon obtained by this method; and silicon raw material for manufacturing highly pure silicon. A method for manufacturing highly pure silicon using molten silicon containing 100 to 1000 ppmw of carbon and 0.5 to 2000 ppmw of germanium as the raw material when manufacturing highly pure silicon by unidirectionally solidifying molten silicon raw material in a casting container, the highly pure silicon obtained by this method, and the silicon raw material for manufacturing the highly pure silicon.

3. 发明公开

EP3150555A4 SILICON MATERIAL AND SECONDARY CELL NEGATIVE ELECTRODE 审中-公开
公开(公告)号：EP3150555A4
公开(公告)日：2018-02-21
申请号：EP15800565
申请日：2015-05-26
申请人： KK TOYOTA JIDOSHOKKI
发明人： MOHRI TAKASHI , NAKANISHI MASATAKA , OSHIMA HIROKI , HARATA MASANORI , GODA NOBUHIRO
IPC分类号： C01B33/02 , C01B33/021 , H01M4/48
CPC分类号： H01M4/386 , C01B33/02 , C01B33/021 , C01B33/12 , C01P2002/60 , C01P2006/12 , C01P2006/40 , H01M4/48 , H01M10/0525 , H01M2004/021 , H01M2004/027
摘要： A silicon material useful as a negative electrode active material is provided. The silicon material has a band gap within a range of greater than 1.1 V and not greater than 1. 7 eV. A secondary battery in which this silicon material is used as a negative electrode active material has improved initial efficiency.

4. 发明公开

EP3153469A4 AMORPHOUS SILICON FOR USE IN FOODS, DRUGS, COSMETICS AND FEED, AND PRODUCTION METHOD AND PRODUCTION DEVICE THEREOF 审中-实审
公开(公告)号：EP3153469A4
公开(公告)日：2017-11-29
申请号：EP15803542
申请日：2015-06-03
申请人： GAIA INST OF ENV TECH INC
发明人： UMEKI SENSHIN , TAGUCHI NOBUKAZU , KONMA NORIKO
IPC分类号： C01B33/18 , A23K10/00 , A23K10/40 , A23L33/16 , A61K8/25 , A61K31/695 , A61K36/00 , A61K36/899 , A61P17/00 , A61P19/10 , A61Q5/00 , A61Q19/00 , F27B7/20
CPC分类号： C01B33/021 , A23K10/00 , A23K20/20 , A23K20/28 , A23K50/00 , A23K50/75 , A23L33/16 , A23V2002/00 , A61K8/25 , A61K31/695 , A61K33/00 , A61K2800/10 , A61K2800/522 , A61K2800/805 , A61Q19/00 , C01B33/18 , C01P2002/02 , C01P2006/80 , F27B7/08 , F27B7/10 , F27B7/18 , F27B7/20 , F27B7/33 , F27B7/36 , F27B7/42
摘要： Porous and easy water soluble amorphous silicon, method and apparatus to produce thereof can be obtained which does not contain tar, crystal, residual agrichemicals, and carcinogens by using only one burning treatment from a plant including silicon abundantly such as rice plant like as rice husks constituting rice, rice straw, rice bran, wheat, corn, grass and horsetailes, tea, potato and the like. It is a method of manufacturing an amorphous silicon which is porous and easily soluble in water and which does not contain tar, crystal, residual agrichemicals and carcinogens, which comprising, burning the rice husks, etc. at the temperature range of between 500 °C or more and 700 °Cor less, while stirring the rice husks, etc., by introducing at atmospheric gas having a mass of 6.7 times or more and 20 times or less of the weight of the rice husks, etc., oxygen gas having a weight of 1.4 times or more and 4 times or less with respect to the weight of the rice husks, etc., or mixed gas of the atmospheric gas and the oxygen gas into the furnace, at the same time as burning, combustion gas generated at the time of combustion rice husks, etc. is discharged from the furnace.

5. 发明公开

EP3044164A4 SYNTHESIS OF SI-BASED NANO-MATERIALS USING LIQUID SILANES 审中-公开
标题翻译： SYNTHES VON NANO-MATERIALIEN AUF SI-BASIS UNTER VERWENDUNGFLÜSSIGERSILANE
公开(公告)号：EP3044164A4
公开(公告)日：2017-06-14
申请号：EP14844950
申请日：2014-09-11
申请人： NDSU RES FOUND
发明人： SRINIVASAN GURUVENKET , ANDERSON KENNETH , HOEY JUSTIN , SAILER ROBERT A
IPC分类号： C01B33/021 , B01J19/00 , C01B33/027 , C01B33/03 , C09K11/59
CPC分类号： C01B33/021 , C01B33/027 , C01B33/03 , C01P2004/51 , C01P2004/64 , C09K11/59 , C23C16/06 , C23C16/24 , C23C16/4486 , H01L21/02532 , H01L21/02581 , H01L21/02601 , H01L21/02623 , H01L21/02628

6. 发明公开

EP3170793A1 HIGH-MOLECULAR-WEIGHT POLYSILANE AND METHOD FOR PRODUCING SAME 有权
标题翻译：多伦多多伦多维多利亚州ZER HERSTELLUNG DAVON
公开(公告)号：EP3170793A1
公开(公告)日：2017-05-24
申请号：EP15821835.4
申请日：2015-06-30
申请人： Thin Film Electronics ASA
发明人： ENDO, Masahisa , SON, Gun , GOTO, Yuichi , NAGAI, Kentaro
IPC分类号： C01B33/04 , C01B33/02 , C03C17/22 , C08G77/60
CPC分类号： C08G77/60 , B05D3/0254 , C01B33/02 , C01B33/021 , C01B33/04 , C03C17/22 , C09D5/24 , C09D183/16 , H01L21/02532
摘要： There is provided a highly conductive and good silicon thin film which is obtained by applying a coating-type polysilane composition prepared by use of a polysilane having a large weight average molecular weight to a substrate, followed by baking. A polysilane having a weight average molecular weight of 5,000 to 8,000. The polysilane may be a polymer of cyclopentasilane. A silicon film obtained by applying a polysilane composition in which the polysilane is dissolved in a solvent to a substrate, and baking the substrate at 100°C to 425°C. The cyclopentasilane may be polymerized in the presence of a palladium catalyst supported on a polymer. The palladium catalyst supported on a polymer may be a catalyst in which palladium as a catalyst component is immobilized on a functional polystyrene. The palladium may be a palladium compound or a palladium complex. The palladium-immobilized catalyst may be formed by microencapsulating a zero-valent palladium complex or a divalent palladium compound with a functional polystyrene. The zero-valent palladium complex may be a tetrakis(triphenylphosphine)palladium (0) complex.
摘要翻译：提供了一种高导电性和良好的硅薄膜，其通过将通过使用具有大重均分子量的聚硅烷制备的涂料型聚硅烷组合物施用到基材上，随后进行烘焙而获得。重均分子量为5,000〜8000的聚硅烷。聚硅烷可以是环戊硅烷的聚合物。将通过将聚硅烷溶解于溶剂中的聚硅烷组合物涂布在基材上而在100℃〜425℃下进行烧成而得到的硅膜。环戊硅烷可以在负载在聚合物上的钯催化剂存在下聚合。负载在聚合物上的钯催化剂可以是其中作为催化剂组分的钯固定在官能聚苯乙烯上的催化剂。钯可以是钯化合物或钯络合物。钯固定化催化剂可以通过用功能聚苯乙烯微囊化零价钯络合物或二价钯化合物来形成。零价钯络合物可以是四（三苯基膦）钯（0）络合物。

7. 发明公开

EP3150554A4 SILICON MATERIAL AND SECONDARY CELL NEGATIVE ELECTRODE 失效
标题翻译： SILIKONMATERIAL UNDSEKUNDÄRZELLENNEGATIVELEKTRODE
公开(公告)号：EP3150554A4
公开(公告)日：2017-05-10
申请号：EP15800022
申请日：2015-05-26
申请人： KK TOYOTA JIDOSHOKKI
发明人： MOHRI TAKASHI , HARATA MASANORI , NAKANISHI MASATAKA , OSHIMA HIROKI , GODA NOBUHIRO
IPC分类号： C01B33/02 , C01B33/021 , H01M4/36 , H01M4/38 , H01M4/48 , H01M4/485
CPC分类号： H01M4/02 , C01B33/021 , H01L29/40 , H01M4/134 , H01M4/362 , H01M4/386 , H01M4/483 , H01M10/02 , H01M2004/021
摘要： A silicon material useful as a negative electrode active material is provided. The silicon material has an Si/O atom ratio within a range of greater than 1/0.5 and not greater than 1/0.1 and a band gap within a range of greater than 1.1 eV and not greater than 2.1 eV. A secondary battery in which this silicon material is used as a negative electrode active material has long life.
摘要翻译：提供可用作负极活性材料的硅材料。硅材料具有在大于1 / 0.5且不大于1 / 0.1的范围内的Si / O原子比和在大于1.1eV且不大于2.1eV的范围内的带隙。其中使用该硅材料作为负极活性材料的二次电池具有长寿命。

8. 发明公开

EP3154700A1 SILICIUMKEIMPARTIKEL FÜR DIE HERSTELLUNG VON POLYKRISTALLINEM SILICIUMGRANULAT IN EINEM WIRBELSCHICHTREAKTOR 有权转让
标题翻译：矽胶丝ÜDI TOR TOR TOR TOR TOR TOR TOR TOR TOR TOR TOR TOR TOR TOR TOR TOR TOR TOR TOR TOR TOR TOR TOR TOR TOR TOR
公开(公告)号：EP3154700A1
公开(公告)日：2017-04-19
申请号：EP15730704.2
申请日：2015-06-02
申请人： Wacker Chemie AG
发明人： FORSTPOINTNER, Gerhard , HAUSWIRTH, Rainer
IPC分类号： B02C19/06 , C01B33/021
CPC分类号： B02C19/068 , C01B33/021 , C04B35/5626 , C04B2235/3839 , C04B2235/3843 , C04B2235/3847 , C04B2235/405
摘要： The object of the invention is a process for the production of silicon seed particles which can be used for the production of polycrystalline silicon granules in a fluidized bed reactor, comprising the introduction of a grinding gas stream into a chamber (5) with polycrystalline silicon granules, whereby individual particles of the polycrystalline silicon granules are accelerated in such a manner that they collide with other particles of the polycrystalline silicon granules, thereby comminuting the polycrystalline silicon granules. The invention is characterized in that the grinding gas stream is introduced into the chamber by at least one jet nozzle (4) made of hard metal.
摘要翻译：可以用于在流化床反应器中生产多晶硅颗粒的硅种子颗粒通过其中将研磨气流引入含有多晶硅颗粒的室中的方法制备，其结果是多晶硅颗粒的单个颗粒以与多晶硅颗粒的其他颗粒碰撞的方式被加速，并且以这种方式粉碎多晶硅颗粒，其中研磨气流由至少一个由硬质金属制成的喷嘴引入室中。

9. 发明公开

EP2863212A4 POLYCRYSTALLINE SILICON CRYSTAL ORIENTATION DEGREE EVALUATION METHOD, POLYCRYSTALLINE SILICON ROD SELECTION METHOD, POLYCRYSTALLINE SILICON ROD, POLYCRYSTALLINE SILICON INGOT, AND POLYCRYSTALLINE SILICON FABRICATION METHOD 有权
标题翻译：评估方法引导DEGREE多晶硅CRYSTAL，FOR多晶硅棒，多晶硅BAR，多晶硅BLOCK AND METHOD FOR多晶硅竞争
公开(公告)号：EP2863212A4
公开(公告)日：2015-11-11
申请号：EP13806297
申请日：2013-06-18
申请人： SHINETSU CHEMICAL CO
发明人： MIYAO SHUICHI , OKADA JUNICHI , NETSU SHIGEYOSHI
IPC分类号： G01N23/20 , C01B33/02 , C01B33/021 , C01B33/035 , C30B13/00 , C30B29/06 , C30B29/60 , G01N23/207
CPC分类号： G01N23/20 , C01B33/02 , C01B33/021 , C01B33/035 , C30B13/00 , C30B29/06 , C30B29/605 , G01N23/207 , G01N2223/3306 , G01N2223/606
摘要： When the degree of crystalline orientation of polycrystalline silicon is evaluated by an X-ray diffraction method, each obtained disc-like sample 20 is disposed in a position where Bragg reflection from a Miller index face is detected and in-plane rotated at a rotational angle Æ with the center of the disc-like sample 20 as the center of rotation, so that an X-ray-radiated region defined by a slit Æ-scans over the principal surface of the disc-like sample 20, to determine a chart representing the dependence of the intensity of Bragg reflection from the Miller index face on the rotational angle (Æ) of the disc-like sample 20, a baseline is determined from the chart, and the diffraction intensity value of the baseline is used as an estimative index of the degree of crystalline orientation.

10. 发明公开

EP2919301A1 METHOD FOR PRODUCING SILICON-CONTAINING PARTICLES FOR ANODE ACTIVE MATERIAL FOR NON-AQUEOUS ELECTROLYTE SECONDARY BATTERY, ANODE MEMBER FOR NON-AQUEOUS ELECTROLYTE SECONDARY BATTERY, NON-AQUEOUS ELECTROLYTE SECONDARY BATTERY, AND SILICON-CONTAINING PARTICLES FOR ANODE ACTIVE MATERIAL FOR NON-AQUEOUS ELECTROLYTE SECONDARY BATTERY 无效
标题翻译：用于生产硅粒子的阳极活性材料，用无水ANALYT，阳极元件与无水ELEKTROLYT，阳极活性物质与水无电解质和硅颗粒含有二次电池用无水ANALYT二次电池二次电池二次电池
公开(公告)号：EP2919301A1
公开(公告)日：2015-09-16
申请号：EP13853237.9
申请日：2013-10-03
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： NAKANISHI, Tetsuo , TANIGUCHI, Kazuyuki , YAMADA, Yoshiyasu
IPC分类号： H01M4/38 , H01M4/134 , H01M10/052
CPC分类号： C01B33/021 , H01M4/134 , H01M4/386 , H01M10/0525 , H01M2004/027
摘要： The present invention manufactures silicon-containing particles for use in a negative electrode active material of a non-aqueous electrolyte secondary battery by obtaining the silicon-containing particles by a deposition method and performing a heat treatment on the silicon-containing particles under a reducing atmosphere at, for example, 400°C to 1100°C. The silicon-containing particles manufactured by this method have an oxygen content ranging from 0.1 to 1.5 mass%. These silicon-containing particles enable manufacture of a non-aqueous electrolyte secondary battery that has a high initial efficiency and an excellent cycle performance and exhibits a small volume variation upon charging and discharging.
摘要翻译：本发明通过通过沉积方法获得的含硅颗粒和在还原气氛下对含硅颗粒进行热处理制造含硅颗粒在非水电解质二次电池的负极活性物质使用在，例如，400℃至1100℃ 通过该方法制造的含硅颗粒对氧含量为0.1〜1.5质量％。这些含硅颗粒启用的非水电解质二次电池的制造确实具有高的初始效率和放电的优异的循环性能并显示在充电时和小体积的变化。

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