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1. 发明公开

EP2862840A4 METHOD FOR PRODUCING HIGH-PURITY POLYCRYSTALLINE SILICON 有权
标题翻译： VERFAHREN ZUR HERSTELLUNG VON HOCHREINEM POLYKRISTALLINEM SILICIUM
公开(公告)号：EP2862840A4
公开(公告)日：2015-11-11
申请号：EP13804452
申请日：2013-06-13
申请人： SHINETSU CHEMICAL CO
发明人： FUNAZAKI KAZUNORI , SATO KAZUOMI , MIYAO SHUICHI
IPC分类号： C01B33/03 , C01B33/035 , G01N33/00 , H01L21/02 , H01L21/66
CPC分类号： H01L22/10 , C01B33/03 , C01B33/035 , G01N33/00 , G01N2033/0095 , H01L21/02532 , H01L21/02595 , H01L21/0262
摘要： The present invention provides technology for realizing higher purification of a polycrystalline silicon. First, trichlorosilane is prepared as a sample (S101) and then the carbon-containing impurities content in the trichlorosilane is analyzed by GC/MS-SIM method (S102). The quality of the trichlorosilane is determined based on the analysis results (S103) and the trichlorosilane determined to be a good material (S103:Yes) is used as the raw material for producing a high-purity polycrystalline silicon by CVD method (104). In case, the trichlorosilane determined to be a bad material (S103: No) is not used as the raw material for producing a polycrystalline silicon. When the impurities analysis by GC/MS-SIM method is performed using, as a separation column, a column having a non-polar column and a medium-polar column connected in series with each other, it is possible to simultaneously perform both of the separation of chlorosilanes and hydrocarbons and the separation of chlorosilanes and methylsilanes.
摘要翻译：本发明提供了用于实现多晶硅的更高纯化的技术。首先，作为样品制备三氯硅烷（S101），然后通过GC / MS-SIM法分析三氯硅烷中的含碳杂质含量（S102）。基于分析结果确定三氯硅烷的质量（S103），将通过CVD法制造高纯度多晶硅的原料（104）用作测定为良好材料的三氯硅烷（S103：是）。在判定为不良物质的三氯硅烷（S103：否）的情况下，不用作多晶硅的制造原料。当通过GC / MS-SIM方法进行的杂质分析是使用具有非极性列和中极性列相互串联连接的列作为分离柱进行时，可以同时进行两个氯硅烷和碳氢化合物的分离以及氯硅烷和甲基硅烷的分离。

2. 发明公开

EP2692909A4 METHOD FOR SELECTING POLYCRYSTALLINE SILICON BAR, AND METHOD FOR PRODUCING SINGLE-CRYSTALLINE SILICON 有权
标题翻译：一种用于选择一个导频信多晶硅和方法，用于制造多晶硅
公开(公告)号：EP2692909A4
公开(公告)日：2014-10-08
申请号：EP12791960
申请日：2012-04-04
申请人： SHINETSU CHEMICAL CO
发明人： MIYAO SHUICHI , OKADA JUNICHI , NETSU SHIGEYOSHI
IPC分类号： C30B29/06 , C01B33/035 , C30B35/00 , G01N23/207
CPC分类号： C30B13/00 , C01B33/035 , C30B15/00 , C30B29/06 , C30B35/007 , G01N23/207

3. 发明公开

EP3168190A4 METHOD FOR PURIFYING CHLOROSILANE 审中-公开
公开(公告)号：EP3168190A4
公开(公告)日：2018-05-09
申请号：EP15818302
申请日：2015-07-02
申请人： SHINETSU CHEMICAL CO
发明人： MIYAO SHUICHI , ISHIDA MASAHIKO , YOSHIDA ATSUSHI , NETSU SHIGEYOSHI
IPC分类号： C01B33/107 , B01D3/14
CPC分类号： C01B33/10794 , B01D3/14 , C01B33/107 , C01B33/1071 , C01B33/10789
摘要： First, at least one of silanol and a siloxane compound is generated in a chlorosilane (S101). In the step, for example, an inert gas having a moisture concentration of 0.5 to 2.5 ppm is brought into contact with the chlorosilane to dissolve the moisture, and at least one of silanol and a siloxane compound is generated through a hydration reaction of a moiety of the chlorosilane. Next, a boron-containing compound contained in the chlorosilane is reacted with the silanol or the siloxane compound, thereby converting the boron-containing compound to a boron oxide (S102). Through the step (S102), the boron-containing compound being a low boiling point compound is converted to a boron oxide being a high boiling point compound, and therefore the difference in boiling point from the boiling point of chlorosilane becomes larger to make later separation easy.

4. 发明公开

EP2835632A4 METHOD FOR EVALUATING DEGREE OF CRYSTAL ORIENTATION IN POLYCRYSTALLINE SILICON, SELECTION METHOD FOR POLYCRYSTALLINE SILICON RODS, AND PRODUCTION METHOD FOR SINGLE-CRYSTAL SILICON 审中-公开
标题翻译： FOR评估晶体取向度方法对多晶硅棒的单晶硅多晶硅SELECTION AND METHOD
公开(公告)号：EP2835632A4
公开(公告)日：2016-03-16
申请号：EP13772580
申请日：2013-03-29
申请人： SHINETSU CHEMICAL CO
发明人： MIYAO SHUICHI , OKADA JUNICHI , NETSU SHIGEYOSHI
IPC分类号： G01N23/20 , C01B33/02 , C30B29/06
CPC分类号： C30B13/34 , C01B33/02 , C01P2002/60 , C01P2002/74 , C23C16/24 , C30B13/00 , C30B15/00 , C30B25/02 , C30B29/06 , C30B35/007 , G01N23/207

5. 发明公开

EP2863212A4 POLYCRYSTALLINE SILICON CRYSTAL ORIENTATION DEGREE EVALUATION METHOD, POLYCRYSTALLINE SILICON ROD SELECTION METHOD, POLYCRYSTALLINE SILICON ROD, POLYCRYSTALLINE SILICON INGOT, AND POLYCRYSTALLINE SILICON FABRICATION METHOD 有权
标题翻译：评估方法引导DEGREE多晶硅CRYSTAL，FOR多晶硅棒，多晶硅BAR，多晶硅BLOCK AND METHOD FOR多晶硅竞争
公开(公告)号：EP2863212A4
公开(公告)日：2015-11-11
申请号：EP13806297
申请日：2013-06-18
申请人： SHINETSU CHEMICAL CO
发明人： MIYAO SHUICHI , OKADA JUNICHI , NETSU SHIGEYOSHI
IPC分类号： G01N23/20 , C01B33/02 , C01B33/021 , C01B33/035 , C30B13/00 , C30B29/06 , C30B29/60 , G01N23/207
CPC分类号： G01N23/20 , C01B33/02 , C01B33/021 , C01B33/035 , C30B13/00 , C30B29/06 , C30B29/605 , G01N23/207 , G01N2223/3306 , G01N2223/606
摘要： When the degree of crystalline orientation of polycrystalline silicon is evaluated by an X-ray diffraction method, each obtained disc-like sample 20 is disposed in a position where Bragg reflection from a Miller index face is detected and in-plane rotated at a rotational angle Æ with the center of the disc-like sample 20 as the center of rotation, so that an X-ray-radiated region defined by a slit Æ-scans over the principal surface of the disc-like sample 20, to determine a chart representing the dependence of the intensity of Bragg reflection from the Miller index face on the rotational angle (Æ) of the disc-like sample 20, a baseline is determined from the chart, and the diffraction intensity value of the baseline is used as an estimative index of the degree of crystalline orientation.

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