基本信息:
- 专利标题： SILICON MATERIAL AND SECONDARY CELL NEGATIVE ELECTRODE
- 申请号：EP15800565 申请日：2015-05-26
- 公开(公告)号：EP3150555A4 公开(公告)日：2018-02-21
- 发明人： MOHRI TAKASHI , NAKANISHI MASATAKA , OSHIMA HIROKI , HARATA MASANORI , GODA NOBUHIRO
- 申请人： KK TOYOTA JIDOSHOKKI
- 专利权人： KK TOYOTA JIDOSHOKKI
- 当前专利权人： KK TOYOTA JIDOSHOKKI
- 优先权： JP2014110827 2014-05-29
- 主分类号： C01B33/02
- IPC分类号： C01B33/02 ; C01B33/021 ; H01M4/48
摘要：
A silicon material useful as a negative electrode active material is provided. The silicon material has a band gap within a range of greater than 1.1 V and not greater than 1. 7 eV. A secondary battery in which this silicon material is used as a negative electrode active material has improved initial efficiency.