会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明授权
    • Multi-metal layer MEMS structure and process for making the same
    • EP1443017B1
    • 2018-09-19
    • EP04380016.8
    • 2004-01-22
    • Akustica Inc.
    • Gabriel, Kaigham J.Zhu, Xu
    • B81C1/00H01G5/16
    • B81C1/00158B81B2201/018B81B2201/0257B81C2201/0109H01G5/16
    • The present invention is directed to a structure comprised of alternating layers of metal and sacrificial material built up using standard CMOS processing techniques, a process for building such a structure, a process for fabricating devices from such a structure, and the devices fabricated from such a structure. In one embodiment, a first metal layer is carried by a substrate. A first sacrificial layer is carried by the first metal layer. A second metal layer is carried by the sacrificial layer. The second metal layer has a portion forming a micro-machined metal mesh. When the portion of the first sacrificial layer in the area of the micro-machined metal mesh is removed, the micro-machined metal mesh is released and suspended above the first metal layer a height determined by the thickness of the first sacrificial layer. The structure may be varied by providing a base layer of sacrificial material between the surface of the substrate and the first metal layer. In that manner, a portion of the first metal layer may form a micro-machined mesh which is released when a portion of the base sacrificial layer in the area of the micro-machined mesh is removed. Additionally, a second layer of sacrificial material and a third metal layer may be provided. A micro-machined mesh may be formed in a portion of the third metal layer. The structure of the present invention may be used to construct variable capacitors, switches and, when certain of the meshes are sealed, microspeakers and microphones.
    • 3. 发明公开
    • RF MEMS crosspoint switch and crosspoint switch matrix comprising RF MEMS crosspoint switches
    • RF-MEMS-Kreuzpunktschalter和Kreuzpunktschaltermatrix mit RF-MEMS-Kreuzpunktschaltern
    • EP2506282A1
    • 2012-10-03
    • EP11160016.9
    • 2011-03-28
    • Delfmems
    • Pavageau, Christophe
    • H01H59/00H01P1/12
    • H01P1/15B81B5/00B81B2201/018H01H1/0036H01H1/20H01H59/0009H01H2001/0063H01H2001/0084H01H2059/0072H01P1/127H01P3/003
    • The RF MEMS crosspoint switch (1) comprising a first transmission (10) line and a second transmission line (11) that crosses the first transmission line ; the first transmission line (10) comprises two spaced-apart transmission line portions (100, 101), and a switch element (12) that permanently electrically connects the said two spaced-apart transmission line portions (100, 101) ; the second transmission line (11) crosses the first transmission line (10) between the two spaced-apart transmission line portions (100, 101); the RF MEMS crosspoint switch (1) further comprises actuation means (121) for actuating the switch element (12) at least between a first position, in which the switch element (12) is electrically connecting the said two spaced-apart transmission line portions (100, 101) of the first transmission line (10) and the first (10) and second (11) transmission lines are electrically disconnected, and a second position, in which the switch element (12) is electrically connecting the said two spaced-apart transmission line portions (100, 101) of the first transmission line (10) and is also electrically connecting the two transmission lines (10, 11) together.
    • RF MEMS交叉点开关(1)包括穿过第一传输线的第一传输(10)线和第二传输线(11); 第一传输线(10)包括两个间隔开的传输线部分(100,101)和永久地电连接所述两个间隔开的传输线部分(100,101)的开关元件(12)。 所述第二传输线(11)穿过所述两个间隔开的传输线部分(100,101)之间的所述第一传输线(10)。 RF MEMS交叉点开关(1)还包括用于至少在第一位置之间致动开关元件(12)的致动装置(121),其中开关元件(12)将所述两个间隔开的传输线部分 第一传输线路(10)和第一(10)和第二(11)传输线路的第一位置(100,101)被电断开;以及第二位置,其中开关元件(12)将所述两个间隔 - 所述第一传输线(10)的传输线路部分(100,101),并且还将所述两条传输线(10,11)电连接在一起。
    • 9. 发明公开
    • Multi-metal layer MEMS structure and process for making the same
    • 多金属层的MEMS结构和它们的制备方法
    • EP1443017A3
    • 2005-06-08
    • EP04380016.8
    • 2004-01-22
    • Akustica Inc.
    • Gabriel, Kaigham J.Zhu, Xu
    • B81B3/00H04R19/00
    • B81C1/00158B81B2201/018B81B2201/0257B81C2201/0109H01G5/16
    • The present invention is directed to a structure comprised of alternating layers of metal and sacrificial material built up using standard CMOS processing techniques, a process for building such a structure, a process for fabricating devices from such a structure, and the devices fabricated from such a structure. In one embodiment, a first metal layer is carried by a substrate. A first sacrificial layer is carried by the first metal layer. A second metal layer is carried by the sacrificial layer. The second metal layer has a portion forming a micro-machined metal mesh. When the portion of the first sacrificial layer in the area of the micro-machined metal mesh is removed, the micro-machined metal mesh is released and suspended above the first metal layer a height determined by the thickness of the first sacrificial layer. The structure may be varied by providing a base layer of sacrificial material between the surface of the substrate and the first metal layer. In that manner, a portion of the first metal layer may form a micro-machined mesh which is released when a portion of the base sacrificial layer in the area of the micro-machined mesh is removed. Additionally, a second layer of sacrificial material and a third metal layer may be provided. A micro-machined mesh may be formed in a portion of the third metal layer. The structure of the present invention may be used to construct variable capacitors, switches and, when certain of the meshes are sealed, microspeakers and microphones.