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1. 发明公开

EP3411894A1 ACTIVE OPENING MEMS SWITCH DEVICE 有权转让
公开(公告)号：EP3411894A1
公开(公告)日：2018-12-12
申请号：EP17713766.8
申请日：2017-02-02
申请人： Analog Devices Global Unlimited Company
发明人： TWOHIG, Michael, James , FITZGERALD, Padraig
IPC分类号： H01H59/00
CPC分类号： B81B3/0051 , B81B2201/014 , B81B2203/0118 , B81B2203/0181 , B81C1/0015 , B81C2201/0109 , B81C2201/0197 , H01H59/0009 , H01H2059/0027 , H01H2059/0054
摘要： Microelectromechanical systems (MEMS) switches are described. The MEMS switches can be actively opened and closed. The switch can include a beam coupled to an anchor on a substrate by one or more hinges. The beam, the hinges and the anchor may be made of the same material in some configurations. The switch can include electrodes, disposed on a surface of the substrate, for electrically controlling the orientation of the beam. The hinges may be thinner than the beam, resulting in the hinges being more flexible than the beam. In some configurations, the hinges are located within an opening in the beam. The hinges may extend in the same direction of the axis of rotation of the beam and/or in a direction perpendicular to the axis of rotation of the beam.

2. 发明授权

EP3210936B1 A METHOD OF MANUFACTURING A PLURALITY OF THROUGH-HOLES IN A LAYER 有权
公开(公告)号：EP3210936B1
公开(公告)日：2018-10-31
申请号：EP17158208.3
申请日：2017-02-27
申请人： SmartTip B.V.
发明人： SARAJLIC, Edin
IPC分类号： B81C1/00 , A61B5/151
CPC分类号： B81C1/0015 , A61B5/150022 , A61B5/150282 , A61B5/150396 , A61B5/150511 , A61B5/150519 , A61B5/150984 , A61B5/15142 , A61M37/0015 , B81B2201/057 , B81B2201/12 , B81B2203/0118 , B81B2203/0353 , B81C1/00087 , B81C1/00111 , B81C1/00119 , B81C2201/0132 , B81C2201/0143 , B81C2201/0159 , B81C2201/0198 , C01B21/0687
摘要： A method of manufacturing a plurality of through-holes (132) in a layer of first material, for example for the manufacturing of a probe (100) comprising a tip containing a channel. To manufacture the through-holes (132) in a batch process, - a layer of first material is deposited on a wafer (200) comprising a plurality of pits (210) - a second layer is provided on the layer of first material, and the second layer is provided with a plurality of holes at central locations of the pits (210); - using the second layer as a shadow mask when depositing a third layer (240) at an angle, covering a part of the first material with said third material (240) at the central locations, and - etching the exposed parts of the first layer using the third layer (240) as a protective layer.

3. 发明公开

EP2972557A4 MEMS HINGES WITH ENHANCED ROTATABILITY 审中-公开
标题翻译：带有改进旋转的MEMS铰链
公开(公告)号：EP2972557A4
公开(公告)日：2016-11-02
申请号：EP14762298
申请日：2014-03-13
申请人： ERLICH RAVIV , GERSON YUVAL
发明人： ERLICH RAVIV , GERSON YUVAL
IPC分类号： G02B26/08 , B81B3/00 , B81C1/00 , G02B26/10
CPC分类号： F16C11/12 , B81B3/0043 , B81B2201/0235 , B81B2201/034 , B81B2201/042 , B81B2203/0118 , B81B2203/0163 , B81C1/0015 , B81C1/00198 , B81C1/00523 , B81C2201/013 , E05D1/02 , E05D7/00 , E05D11/0081 , F16F1/48 , F16F2224/025 , F16F2226/00 , F16F2226/042 , G01C19/02 , G01P15/09 , G01P15/093 , G01P15/125 , G02B26/0833 , G02B26/105 , Y10T16/522 , Y10T16/525 , Y10T29/24 , Y10T29/25
摘要： A mechanical device includes a long, narrow element made of a rigid, elastic material. A rigid frame is configured to anchor at least one end of the element, which is attached to the frame, and to define a gap running longitudinally along the element between the beam and the frame, so that the element is free to move within the gap. A solid filler material, different from the rigid, elastic material, fills at least a part of the gap between the element and the frame so as to permit a first mode of movement of the element within the gap while inhibiting a different, second mode of movement.

4. 发明公开

EP2540877A1 SINGLE CRYSTAL DIAMOND MOVABLE STRUCTURE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：单晶金刚石可动结构及其制造方法
公开(公告)号：EP2540877A1
公开(公告)日：2013-01-02
申请号：EP11744760.7
申请日：2011-02-18
申请人： National Institute for Materials Science
发明人： LIAO, Meiyong , KOIDE, Yasuo , HISHIDA, Shunichi
IPC分类号： C30B29/04 , B81B3/00 , B81C3/00 , B82B1/00 , C23C16/27 , G01Q70/16
CPC分类号： C30B29/04 , B81C1/0015 , B81C2201/019 , C30B31/22
摘要： The utilization of single crystal diamond in a nano- or micro-machine (N/MEMS) device is difficult, and there has been no report on such utilization. The reason for this resides in that it is difficult to grow single crystal diamond on an oxide which is a sacrifice layer. In a conventional technique, a cantilever or the like is produced by forming polycrystalline diamond or nanodiamond on an oxide as a sacrifice layer, but the mechanical performance, vibration characteristics, stability, and reproducibility of the produced cantilever or the like are unsatisfactory. In the present invention, utilizing the fact that the high concentration ion-implanted region in a diamond substrate 101 is modified into graphite, the layer 104 modified into graphite as a sacrifice layer is removed by electrochemical etching to obtain the diamond layer remaining on the resultant substrate as a movable structure. The produced cantilever 106 exhibited high frequency resonance. The use of single crystal diamond makes it possible to improve the N/MEMS device in mechanical performance and stability as well as electric properties.
摘要翻译：在纳米或微机器（N / MEMS）器件中使用单晶金刚石是困难的，并且还没有关于这种利用的报道。其原因在于，难以在作为牺牲层的氧化物上生长单晶金刚石。在常规技术中，通过在氧化物上形成多晶金刚石或纳米金刚石作为牺牲层来制造悬臂梁等，但所制造的悬臂梁等的机械性能，振动特性，稳定性和再现性不令人满意。在本发明中，利用金刚石基板101中的高浓度离子注入区被改性为石墨的事实，通过电化学蚀刻除去被改性为石墨作为牺牲层的层104，以获得残留在合成物上的金刚石层衬底作为可移动结构。所制造的悬臂106呈现高频共振。使用单晶金刚石可以改善N / MEMS器件的机械性能和稳定性以及电性能。

5. 发明授权

EP1760036B1 MEMS device having contact and standoff bumps and method of actuating 有权
标题翻译：具有接触和支座凸块和操作的方法的MEMS装置
公开(公告)号：EP1760036B1
公开(公告)日：2012-06-13
申请号：EP06126731.6
申请日：2002-11-08
申请人： WiSpry, Inc.
发明人： Dereus, Dana, R.
IPC分类号： B81B3/00 , H01H59/00
CPC分类号： B81B3/0024 , B81B3/0051 , B81B2201/014 , B81B2201/018 , B81B2203/0118 , B81B2203/04 , B81B2207/07 , B81C1/0015 , B81C2201/0107 , B81C2201/0108 , B81C2201/0109 , H01H1/04 , H01H1/504 , H01H59/0009 , H01H61/04 , H01H2001/0042 , H01H2001/0063 , H01H2001/0089 , H01H2059/0072 , H01H2061/006 , H01L23/3735 , H01L23/522 , H01L27/1203 , H01L2924/0002 , H01L2924/09701 , H02N1/006 , H02N10/00 , Y10T29/49222 , H01L2924/00

6. 发明授权

EP2013137B1 PROCESS FOR COLLECTIVE MANUFACTURING OF MEMBRANES AND SMALL VOLUME CAVITIES HAVING HIGH DIMENSIONAL ACCURACY 有权
标题翻译：过程膜材和空洞对小号和大体积的尺寸稳定性的制备
公开(公告)号：EP2013137B1
公开(公告)日：2011-10-12
申请号：EP07728561.7
申请日：2007-04-26
申请人： Tronic's Microsystems
发明人： COLLET, Joël , NICOLAS, Stéphane , PISELLA, Christian
IPC分类号： B81C1/00 , F04B43/04
CPC分类号： B81C1/0015 , B81B2201/054 , B81C1/00357 , B81C2201/019 , F04B43/046
摘要： The invention relates to a process for collective manufacturing of cavities and/or membranes (24), with a given thickness d, in a wafer said to be a semiconductor on insulator layer, comprising at least one semiconducting surface layer with a thickness d on an insulating layer, this insulating layer itself being supported on a substrate, this process comprising: - etching of the semiconducting surface layer with thickness d, the insulating layer forming a stop layer, to form said cavities and/or membranes in the surface layer.

7. 发明授权

EP1717195B1 Trilayered beam MEMS switch and related method 有权
标题翻译： MEMS开关具有三层弯曲梁和相关方法
公开(公告)号：EP1717195B1
公开(公告)日：2011-09-14
申请号：EP06118802.5
申请日：2002-11-08
申请人： WiSpry, Inc.
发明人： Cunningham, Shawn, J. , Tatic-Lucic, Svetlana
IPC分类号： B81B3/00
CPC分类号： B81B3/0024 , B81B3/0051 , B81B2201/014 , B81B2201/018 , B81B2203/0118 , B81B2203/04 , B81B2207/07 , B81C1/0015 , B81C2201/0107 , B81C2201/0108 , B81C2201/0109 , H01H1/04 , H01H1/504 , H01H59/0009 , H01H61/04 , H01H2001/0042 , H01H2001/0063 , H01H2001/0089 , H01H2059/0072 , H01H2061/006 , H01L23/3735 , H01L23/522 , H01L27/1203 , H01L2924/0002 , H01L2924/09701 , H02N1/006 , H02N10/00 , Y10T29/49222 , H01L2924/00

8. 发明授权

EP1717194B1 Trilayered Beam MEMS device and related methods 有权
标题翻译：三层光束MEMS器件及其相关方法
公开(公告)号：EP1717194B1
公开(公告)日：2009-05-27
申请号：EP06118800.9
申请日：2002-11-08
申请人： WiSpry, Inc.
发明人： Cunningham, Shawn, J. , Tatic-Lucic, Svetlana
IPC分类号： B81B3/00
CPC分类号： B81B3/0024 , B81B3/0051 , B81B2201/014 , B81B2201/018 , B81B2203/0118 , B81B2203/04 , B81B2207/07 , B81C1/0015 , B81C2201/0107 , B81C2201/0108 , B81C2201/0109 , H01H1/04 , H01H1/504 , H01H59/0009 , H01H61/04 , H01H2001/0042 , H01H2001/0063 , H01H2001/0089 , H01H2059/0072 , H01H2061/006 , H01L23/3735 , H01L23/522 , H01L27/1203 , H01L2924/0002 , H01L2924/09701 , H02N1/006 , H02N10/00 , Y10T29/49222 , H01L2924/00

9. 发明公开

EP1943184A1 NON-VOLATILE MEMORY DEVICE 审中-公开
标题翻译：非易失性存储装置
公开(公告)号：EP1943184A1
公开(公告)日：2008-07-16
申请号：EP06808404.5
申请日：2006-11-02
申请人： CAVENDISH KINETICS LIMITED
发明人： VAN KAMPEN, Robert , KAZINCZI, Robert
IPC分类号： B81B3/00 , G11C23/00 , G11C11/50 , H01H1/00
CPC分类号： H01H59/0009 , B81C1/0015 , B81C2201/014 , B81C2201/0176 , G11C23/00 , H01H51/12
摘要： A non-volatile memory device and method of manufacturing a non-volatile micro-electromechanical memory cell. The method comprises the first step of depositing a first layer of sacrificial material on a substrate by use of Atomic Layer Deposition The second step of the method is providing a cantilever (101) over at least a portion of the first layer of sacrificial material. The third step is depositing, by use of Atomic Layer Deposition, a second layer of sacrificial material over the first layer of sacrificial material and over a portion of the cantilever such that a portion of the cantilever is surrounded by sacrificial material. The fourth step is providing a further layer material (107) which covers at least a portion of the second layer of sacrificial material. Finally, the last step is etching away the sacrificial material surrounding the cantilever, thereby defining a cavity (102) in which the cantilever is suspended.

10. 发明授权

EP1203748B1 MICRODEVICE AND ITS PRODUCTION METHOD 有权
标题翻译：科技组件及其制造方法
公开(公告)号：EP1203748B1
公开(公告)日：2007-05-09
申请号：EP00900814.5
申请日：2000-01-19
申请人： MITSUBISHI DENKI KABUSHIKI KAISHA
发明人： YOSHIDA, Yukihisa, Mitsubishi Denki KK , CHABLOZ, Martial, Mitsubishi Denki KK , JIAO, Jiwei, Mitsubishi Denki KK , MATSUURA, Tsukasa, Mitsubishi Denki KK , TSUTSUMI, Kazuhiko, Mitsubishi Denki KK
IPC分类号： B81B3/00 , B81C1/00 , G01P15/125 , G02B26/08 , H01L29/84
CPC分类号： G01P15/125 , B81B2201/0228 , B81B2203/0136 , B81C1/0015 , B81C1/00579 , G01P1/023 , G01P15/0802 , G01P2015/0814 , Y10T29/49002 , Y10T29/49117
摘要： A microdevice comprises an insulator base having a recess therein and a beamlike silicon structural body provided in the front side of the base and surrounding the recess. The beamlike structural body includes a functional section that comprises a support joined to the base, a cantilevered beam integrated with the support and extending over the recess, and a conductive film formed at least over the surface of the recess immediately under the cantilevered beam and electrically connected to the support. The conductive film serves to prevent the recess from being charged positively during dry etching. Therefore the etching gas having positive charge is repelled by the electrical repulsive force exerted by the recess and do not corrode the structural body. Thus such a microdevice has a beamlike structural body of high shape and dimensional precisions, providing high reliability and high degree of freedom of design.

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