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1. 发明授权

EP0475714B1 A distributed feedback semiconductor laser device and a method of producing the same 失效
标题翻译：一种半导体激光器及其制备分布反馈和过程
公开(公告)号：EP0475714B1
公开(公告)日：1995-12-27
申请号：EP91308232.7
申请日：1991-09-10
申请人： SHARP KABUSHIKI KAISHA
发明人： Kudo, Hiroaki , Takiguchi, Haruhisa , Inoguchi, Kazuhiko , Nakanishi, Chitose , Sugahara, Satoshi
IPC分类号： H01S3/085 , H01L33/00
CPC分类号： H01S5/12 , H01S5/1228 , H01S5/20 , H01S5/2231

2. 发明授权

EP0356135B1 A semiconductor laser device 失效
公开(公告)号：EP0356135B1
公开(公告)日：1993-11-10
申请号：EP89308335.2
申请日：1989-08-16
申请人： SHARP KABUSHIKI KAISHA
发明人： Kudo, Hiroaki , Takiguchi, Haruhisa , Sakane, Chitose , Sugahara, Satoshi
IPC分类号： H01S3/06 , H01S3/19
CPC分类号： H01S5/12 , H01S5/24

3. 发明授权

EP0212977B1 A buried type semiconductor laser device 失效
标题翻译： BURIED型半导体激光器件
公开(公告)号：EP0212977B1
公开(公告)日：1992-10-14
申请号：EP86306486.1
申请日：1986-08-21
申请人： SHARP KABUSHIKI KAISHA
发明人： Yoshida, Toshihiko , Takiguchi, Haruhisa , Kaneiwa, Shinji 101 Kyobate Mansion , Kudo, Hiroaki , Matsui, Sadayoshi
IPC分类号： H01S3/19
CPC分类号： H01S5/24 , H01S5/0035 , H01S5/2235 , H01S5/2237 , H01S5/227 , H01S5/2275

4. 发明公开

EP0433051A3 A semiconductor laser device and a method of producing the same 失效
标题翻译：一种半导体激光器件及其制造方法
公开(公告)号：EP0433051A3
公开(公告)日：1992-04-15
申请号：EP90313536.6
申请日：1990-12-12
申请人： SHARP KABUSHIKI KAISHA
发明人： Konushi, Fumihiro , Nakatsu, Hiroshi , Inoguchi, Kazuhiko , Okumura, Toshiyuki , Seki, Akinori , Takiguchi, Haruhisa , Nakanishi, Chitose , Sugahara, Satoshi , Kudo, Hiroaki
IPC分类号： H01S3/19 , H01S3/25 , H01S3/085 , H01L33/00
CPC分类号： H01S5/227 , H01L21/02392 , H01L21/02395 , H01L21/02461 , H01L21/02463 , H01L21/02543 , H01L21/02546 , H01L21/0262 , H01L21/02639 , H01L33/0062 , H01S5/12 , H01S5/1228 , H01S5/20 , H01S5/2059 , H01S5/2201 , H01S5/2213 , H01S5/2272 , H01S5/2275 , H01S5/32391 , H01S5/4031 , H01S5/4037
摘要： A semiconductor laser device having a mesa stripe whose side faces are facets of {111} planes is disclosed. In the laser device, a current blocking layer is formed on a semiconductor substrate whose main surface is a (100) plane, and a channel which is oriented along the direction is formed in the current blocking layer. The mesa stripe is formed on the substrate within the channel by a selective growth technique. The mesa stripe has a multilayer structure including an active layer and is covered by a burying layer.

5. 发明公开

EP0275209A3 A semi conductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：EP0275209A3
公开(公告)日：1991-05-08
申请号：EP88300330.3
申请日：1988-01-15
申请人： SHARP KABUSHIKI KAISHA
发明人： Takiguchi, Haruhisa , Kaneiwa, Shinji , Kudo, Hiroaki , Sakane, Chitose , Yoshida, Toshihiko
IPC分类号： H01S3/19
CPC分类号： H01S5/2231 , H01S5/0421 , H01S5/2206 , H01S5/3211 , H01S5/32316 , H01S5/32391
摘要： A semiconductor laser device comprising a double-heterostructure having an active layer (3) and a pair of cladding layers (2,8) sandwiching the active layer (3) therebetween, and a stripe structure, disposed on the double-heterostructure, the stripe structure being composed of a current blocking layer (5) having a conductive type different from that of the adjacent cladding layer (8), and the current blocking layer (5) having a striped channel (50) constituting a current path, wherein the cladding layer (8) that contacts the current blocking layer (5) is composed of an In l-s Ga s P l-t As t crystal material, wherein 0.51 ≦ s ≦ 1, 0 ≦ t ≦ 1 and s=2.04t - 1.04.

6. 发明公开

EP0349193A3 A multi-layered dielectric film 失效
标题翻译：多层电介质膜
公开(公告)号：EP0349193A3
公开(公告)日：1990-05-02
申请号：EP89306309.9
申请日：1989-06-22
申请人： SHARP KABUSHIKI KAISHA
发明人： Kudo, Hiroaki , Sugahara, Satoshi , Sakane, Chitose , Takiguchi, Haruhisa
IPC分类号： G02B1/10 , H01S3/02
CPC分类号： G02B1/10 , H01S5/028 , H01S5/0281
摘要： A multi-layered dielectric film that is coated on the end surfaces or other surfaces of optical products, and is composed of alternate layers (2,3,4,5) consisting of two kinds of dielectric layer, one (2,4) of which is a first dielectric layer of TiO₂ or ZnS with a high refractive index n₁ and the other (3,5) of which is a second dielectric layer of Al₂O₃ with a low refractive index n₂.

7. 发明公开

EP0274441A2 A distributed feedback semiconductor laser device 失效
标题翻译：分布式反馈半导体激光器件
公开(公告)号：EP0274441A2
公开(公告)日：1988-07-13
申请号：EP88300110.9
申请日：1988-01-07
申请人： SHARP KABUSHIKI KAISHA
发明人： Kudo, Hiroaki , Takiguchi, Haruhisa , Kaneiwa, Shinji , Yoshida, Toshihiko
IPC分类号： H01S3/085 , H01S3/06 , H01S3/19
CPC分类号： H01S5/10 , H01S5/12 , H01S5/124 , H01S5/1243
摘要： A distributed feedback semiconductor laser device with a resonator comprising a multi-layered optical waveguide that contains an optical guiding area (5,5') with a periodic corrugation, the optical guiding area being composed of at least two regions, a first region I and a second region II , wherein both the periodicity of the corrugation and the depth of each concave portion of the corrugation of the first region I of the optical guiding area (5) are the same as those of the second region II of the optical guiding area (5'), and moreover the thickness of the first region I of the optical guiding area (5) is the same as that of the second region II of the optical guiding area (5'), so that the effective refractive index of the first region I in the resonator direction becomes the same as that of the second region II in the resonator direction and the Bragg wavelength is maintained at a fixed level in the the resonator direction; and there is a difference in their refractive index at the interface between the first and second regions of the optical guiding area (5,5'), so that an effective optical-phase shift takes place without changing the Bragg wavelength in the resonator direction.
摘要翻译：一种具有谐振器的分布式反馈半导体激光器件，该谐振器包括多层光波导，该波导包含具有周期性波纹的光导区域（5,5'），该光导区域由至少两个区域组成，第一区域I和第二区域II，其中光导区域（5）的第一区域I的波纹的周期性和波纹的每个凹陷部分的深度都与光导区域的第二区域II的相同（5'），而且光导区域（5）的第一区域I的厚度与光导区域（5'）的第二区域II的厚度相同，从而使得谐振器方向上的第一区域I与谐振器方向上的第二区域II的区域变得相同，并且布拉格波长在谐振器方向上保持在固定的水平; 并且在光导区域（5,5'）的第一区域和第二区域之间的界面处的折射率存在差异，使得发生有效的光学相移而不改变谐振器方向上的布拉格波长。

8. 发明公开

EP0259860A2 Integrated optic disc pickup 失效
标题翻译： Integrierter Abtasterfüroptische Platte。
公开(公告)号：EP0259860A2
公开(公告)日：1988-03-16
申请号：EP87113191.8
申请日：1987-09-09
申请人： SHARP KABUSHIKI KAISHA
发明人： Yano, Seiki , Kudo, Hiroaki , Takiguchi, Haruhisa , Hijikata, Toshiki , Kaneiwa, Shinji
IPC分类号： G11B7/12 , G11B7/09
CPC分类号： G11B7/1384 , G11B7/0912 , G11B7/124
摘要： An integrated optic disc pickup comprising an optical waveguide in the form of a insulation layer provided on the surface of a substrate, a semiconductor laser disposed outside the waveguide, a beam splitter of the transmission type and a Luneburg lens provided for the path of propagation of a laser beam from the semiconductor laser through the waveguide and arranged in the order mentioned in a direction away from the laser, a transmission grating provided on the path through the waveguide to be followed by the laser beam upon having its direction changed by the beam splitter after emanating from the laser, passing through the beam splitter and the Luneburg lens, being reflected from an optic disc disposed outside the waveguide and passing through the Luneburg lens, and first and second photodetectors disposed on the paths of propagation through the waveguide of two portions of the laser beam divided by the diffraction grating.
摘要翻译：一种集成的光盘拾取器，包括设置在基板表面上的绝缘层形式的光波导，布置在波导外部的半导体激光器，透射型光束分离器和用于传播路径的Luneburg透镜来自半导体激光器的激光束通过波导并以沿远离激光器的方向提到的顺序布置;透射光栅，其设置在穿过波导的路径上，随着激光束的方向由分束器在从激光器发出之后，穿过分束器和Luneburg透镜，从设置在波导外侧并通过Luneburg透镜的光盘反射，并且第一和第二光电探测器设置在通过两个部分的波导的传播路径上的激光束被衍射光栅分开。

9. 发明授权

EP0274441B1 A distributed feedback semiconductor laser device 失效
标题翻译：分布式反馈半导体激光器件
公开(公告)号：EP0274441B1
公开(公告)日：1993-04-21
申请号：EP88300110.9
申请日：1988-01-07
申请人： SHARP KABUSHIKI KAISHA
发明人： Kudo, Hiroaki , Takiguchi, Haruhisa , Kaneiwa, Shinji , Yoshida, Toshihiko
IPC分类号： H01S3/085 , H01S3/06 , H01S3/19
CPC分类号： H01S5/10 , H01S5/12 , H01S5/124 , H01S5/1243

10. 发明公开

EP0475714A3 A distributed feedback semiconductor laser device and a method of producing the same 失效
标题翻译：分布式反馈半导体激光器件及其制造方法
公开(公告)号：EP0475714A3
公开(公告)日：1992-10-28
申请号：EP91308232.7
申请日：1991-09-10
申请人： SHARP KABUSHIKI KAISHA
发明人： Kudo, Hiroaki , Takiguchi, Haruhisa , Inoguchi, Kazuhiko , Nakanishi, Chitose , Sugahara, Satoshi
IPC分类号： H01S3/085 , H01L33/00
CPC分类号： H01S5/12 , H01S5/1228 , H01S5/20 , H01S5/2231
摘要： A distributed feedback semiconductor laser device comprising a current blocking structure having a stripe groove (15), and a diffraction grating (14) formed in the bottom of the stripe groove (15). The current blocking structure is formed over an active layer (3) for laser oscillation, and it includes an etch stop layer (8) against a groove etching in a lower potion of the current blocking structure. The refractive index distribution in transverse directions inside the stripe groove (15) is controlled by the thickness of the optical guiding layer (5), enabling oscillation of the fundamental transerse mode.

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