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1. 发明授权

EP1846994B1 DIGITAL SIGNAL REGENERATION, RESHAPING AND WAVELENGTH CONVERSION USING AN OPTICAL BISTABLE SILICON RAMAN LASER 失效
标题翻译：数字信号再生，以及形成波长实现使用光学双稳硅拉曼雷射
公开(公告)号：EP1846994B1
公开(公告)日：2012-05-30
申请号：EP06717652.9
申请日：2006-01-05
申请人： Intel Corporation
发明人： LIU, Ansheng , PANICCIA, Mario
IPC分类号： H01S3/30 , H01S3/063
CPC分类号： H01S3/30 , H01S3/063 , H01S3/0637 , H01S5/32
摘要： An optical bistable silicon Raman laser is disclosed, which provides digital signal regeneration, reshaping and wavelength conversion. An apparatus according to aspects of the present invention includes an optical waveguide (119) disposed in semiconductor material (121). First and second reflectors (103, 105) are disposed in the optical waveguide. The first and second reflectors define a cavity in the optical waveguide. The cavity is to receive a first optical beam (109) having a first wavelength (lamda e). A power level of the first optical beam received by the cavity rising above a second power level results in emission of a second optical beam (111) of a second wavelength (lamda s) from the cavity until the power level of the first optical beam received by the cavity falls below a first power level. The first power level is less than the second power level.

2. 发明公开

EP2262067A3 Optoelektronisches Halbleiterbauelement 有权转让
标题翻译：的光电子半导体器件
公开(公告)号：EP2262067A3
公开(公告)日：2012-01-04
申请号：EP10165590.0
申请日：2010-06-10
申请人： Forschungsverbund Berlin e.V.
发明人： Crump, Paul , Erbert, Götz , Pietrzak, Agnieszka , Wenzel, Hans , Bugge, Frank , Zorn, Martin
IPC分类号： H01S5/32 , H01S5/20 , H01S5/22 , H01S5/34
CPC分类号： H01S5/32 , B82Y20/00 , H01S5/2031 , H01S5/2036 , H01S5/22 , H01S5/3213 , H01S5/3407 , H01S2301/18
摘要： Die vorliegende Erfindung betrifft eine Hochleistungslaserdiode mit einer vorteilhaften Energieabstrahlung im Fernfeld, d.h. Abstrahlung mit einem schmalen vertikalen Fernfeld.
Es ist Aufgabe der vorliegenden Erfindung, eine Hochleistungslaserdiode und ein Verfahren zu deren Herstellung anzugeben, die trotz relativ geringer Weftenfeiterschichtdicken eine Abstrahlung mit geringer Divergenz bezogen auf das vertikale Fernteld aufweist. Dadurch soll insbesondere eine effiziente Einkopplung der Laserstrahlung in optische Systeme, z.B. eine Lichtleitfaser, gewährleistet werden.
Erfindungsgemäß weist die wobei die aktive Schicht (10) eine Quantentopfstruktur auf, bei der mindestens eine Topfschicht (20) und mindestens zwei Barriereschichten (22) abwechselnd aufeinander geschichtet sind, wobei die jeweils den Wellenleiterschichten (12, 16) nächstgelegenen Barriereschichten (22a, 22b) eine Brechzahl aufweisen, die kleiner oder gleich als die Brechzahl der jeweils angrenzenden Wellenleiterschicht (12, 16) ist.

3. 发明公开

EP2262067A2 Optoelektronisches Halbleiterbauelement 有权转让
公开(公告)号：EP2262067A2
公开(公告)日：2010-12-15
申请号：EP10165590.0
申请日：2010-06-10
申请人： Forschungsverbund Berlin e.V.
发明人： Crump, Paul , Erbert, Götz , Pietrzak, Agnieszka , Wenzel, Hans , Bugge, Frank , Zorn, Martin
IPC分类号： H01S5/32 , H01S5/22 , H01S5/34
CPC分类号： H01S5/32 , B82Y20/00 , H01S5/2031 , H01S5/2036 , H01S5/22 , H01S5/3213 , H01S5/3407 , H01S2301/18
摘要： Die vorliegende Erfindung betrifft eine Hochleistungslaserdiode mit einer vorteilhaften Energieabstrahlung im Fernfeld, d.h. Abstrahlung mit einem schmalen vertikalen Fernfeld.
Es ist Aufgabe der vorliegenden Erfindung, eine Hochleistungslaserdiode und ein Verfahren zu deren Herstellung anzugeben, die trotz relativ geringer Weftenfeiterschichtdicken eine Abstrahlung mit geringer Divergenz bezogen auf das vertikale Fernteld aufweist. Dadurch soll insbesondere eine effiziente Einkopplung der Laserstrahlung in optische Systeme, z.B. eine Lichtleitfaser, gewährleistet werden.
Erfindungsgemäß weist die wobei die aktive Schicht (10) eine Quantentopfstruktur auf, bei der mindestens eine Topfschicht (20) und mindestens zwei Barriereschichten (22) abwechselnd aufeinander geschichtet sind, wobei die jeweils den Wellenleiterschichten (12, 16) nächstgelegenen Barriereschichten (22a, 22b) eine Brechzahl aufweisen, die kleiner oder gleich als die Brechzahl der jeweils angrenzenden Wellenleiterschicht (12, 16) ist.
摘要翻译：光电子半导体器件具有适于产生辐射的有源层，并且具有设置在有源层一侧的波导层。波导层和另一个波导层的厚度之和大于2微米。最靠近前一个波导层和后一个波导层的阻挡层的折射率小于或等于相邻波导层的折射率。

4. 发明公开

EP1476925A1 METHOD OF GENERATING OPTICAL RADIATION, AND OPTICAL RADIATION SOURCE 审中-公开
标题翻译：方法产生光辐射和光辐射源
公开(公告)号：EP1476925A1
公开(公告)日：2004-11-17
申请号：EP03700325.8
申请日：2003-01-23
申请人： Oulun Yliopisto
发明人： VAINSHTEIN, Sergey , KOSTAMOVAARA, Juha , SHESTAK, Larisa , SVERDLOV, Mikhail
IPC分类号： H01S5/32
CPC分类号： B82Y20/00 , H01S5/06216 , H01S5/2009 , H01S5/32 , H01S5/3415
摘要： An apparatus and a method are provided for generating an optical pulse by using a current pulse. The arrangement is based on a specific semiconductor structure, where a carrier injector is separated from the optically active region by a potential barrier for the injected carriers and on low carrier mobility in the semiconductor component, which features give rise to formation of a current-assisted strong electric field in the optically active region at moderate current densities before positive net gain is achieved. The current-assisted electric field broadens the gain spectrum in the active layer thus suppressing positive net gain and permitting carrier accumulation in the active layer. When the current pulse is stopped, the positive net gain is achieved, giving rise to an optical emission from the active layer.

5. 发明公开

EP1139437A2 Diamond semiconductor and diamond semiconductor light-emitting device 有权
标题翻译： Lichtemittierende Diamanthalbleiteranordnung
公开(公告)号：EP1139437A2
公开(公告)日：2001-10-04
申请号：EP00310801.6
申请日：2000-12-05
申请人： National Institute of Advanced Industrial Science and Technology, Independent Administrative Institution
发明人： Okushi, Hideyo, c/o Electrotechnical Laboratory , Takeuchi, Daisuki, c/o Electrotechnical Laboratory , Kajimura, Koji, c/o Electrotechnical Laboratory , Watanabe, Hikeyuki c/o Electrotechnical Laboratory
IPC分类号： H01L33/00 , H01L21/205 , H01L21/04 , G02F1/355
CPC分类号： H01L33/34 , H01L21/0405 , H01S5/32 , H01S5/3228
摘要： A diamond semiconductor has an exciton light-emission intensity characteristic that varies nonlinearly.
摘要翻译：金刚石半导体具有非线性变化的激子发光强度特性。

6. 发明公开

EP0896406A3 Semiconductor laser device, optical communication system using the same, and method for producing compound semiconductor 有权
标题翻译：一种半导体激光器件，使用相同的和制造方法的光通信系统
公开(公告)号：EP0896406A3
公开(公告)日：2000-11-08
申请号：EP98114940.4
申请日：1998-08-07
申请人： Matsushita Electric Industrial Co., Ltd.
发明人： Kitoh, Masahiro , Ishino, Masato , Matsui, Yasushi
IPC分类号： H01S3/19 , H01S3/085 , C30B25/02 , C30B29/40
CPC分类号： H01S5/343 , B82Y20/00 , C30B25/02 , C30B29/40 , H01S5/021 , H01S5/0218 , H01S5/18311 , H01S5/2275 , H01S5/32 , H01S5/3235 , H01S5/32375 , H01S5/34306 , H01S5/34346 , H01S2304/04
摘要： The semiconductor laser device of the present invention includes a GaAs substrate and a multi-layer structure formed on the GaAs substrate. The multi-layer structure includes an active layer for emitting light. The active layer includes an InN x As y P 1-x-y (where 0

7. 发明公开

EP0902487A2 A semiconductor device and method of fabrication thereof 失效
标题翻译：一种半导体器件及其制造方法
公开(公告)号：EP0902487A2
公开(公告)日：1999-03-17
申请号：EP98300278.3
申请日：1998-01-15
申请人： Vydyanath, Honnavalli R.
发明人： Vydyanath, Honnavalli R.
IPC分类号： H01L33/00 , H01S3/19
CPC分类号： H01S5/32341 , H01L33/325 , H01S5/305 , H01S5/3054 , H01S5/3059 , H01S5/32
摘要： A method of providing shallow acceptor and donor energy levels to produce higher conductivity semiconductor materials, relies on the coulombic pairing of donor and acceptor elements. One exemplary embodiment is applied to create shallow acceptor levels in the III-V nitride materials via the coulombic pairing of group I elements which, in principle, act as double acceptors occupying metal lattice sites with group IV or group VI elements which act as single donors occupying metal or nitrogen lattice sites, respectively. The resulting pairs act as single acceptors with an energy level much closer to the valence band edge than that of either the first or second level of the group I element acceptors in their unpaired state. This approach, when optimized, can result in creating acceptor levels much shallower than the Mg acceptors currently used to make p-type GaN and its alloys. The donor and acceptor species comprising the coulombic pairs may be either the result of external doping or the result of deviation from stoichiometry or from a combination of both.
摘要翻译：提供浅受主和施主能级以产生更高电导率的半导体材料的方法依赖于施主元素和受主元素的库仑配对。一个示例性实施方案被用于通过I族元素的库仑配对在III-V族氮化物材料中产生浅受主能级，其原则上充当占据金属晶格位点的具有IV族或VI族元素的双受体，其充当单个供体分别占据金属或氮晶格位置。由此产生的对作为单受体，其能级接近于价带边缘，与未配对状态下的I族元素受体的第一或第二能级相比。这种方法经过优化后，可以产生比目前用于制造p型GaN及其合金的Mg受主更浅的受主能级。包含库伦对的供体和受体物种可以是外部掺杂的结果，也可以是偏离化学计量学的结果或者两者的组合。

8. 发明授权

EP0437385B1 Structure à semiconducteurs pour composant optoélectronique 失效
标题翻译：一种半导体结构，用于光电子器件。
公开(公告)号：EP0437385B1
公开(公告)日：1995-03-01
申请号：EP91400015.3
申请日：1991-01-04
申请人： FRANCE TELECOM
发明人： Gérard, Jean-Michel , Weisbuch, Claude
IPC分类号： H01L33/00 , H01S3/06 , H01S3/19
CPC分类号： H01S5/34 , B82Y20/00 , H01L33/06 , H01L33/30 , H01S5/021 , H01S5/10 , H01S5/32 , H01S5/3403 , H01S5/3432

9. 发明公开

EP0535293A1 A method of fabricating a compositional semiconductor device 失效
标题翻译： Verfahren zur Herstellung einer zusammengesetzten Halbleitervorrichtung。
公开(公告)号：EP0535293A1
公开(公告)日：1993-04-07
申请号：EP92100943.7
申请日：1992-01-21
申请人： Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V.
发明人： Nötzel, Richard , Ledentsov, N. Nikolai, Dr. , Däweritz, Lutz, Dr.sc. , Ploog, Klaus, Dr.
IPC分类号： H01L21/335 , H01L21/20 , H01L29/04 , H01L29/76 , H01L29/14 , H01S3/19
CPC分类号： H01L33/06 , B82Y10/00 , B82Y20/00 , H01L21/02395 , H01L21/02433 , H01L21/0245 , H01L21/02463 , H01L21/02499 , H01L21/02507 , H01L21/02546 , H01L21/02609 , H01L21/02631 , H01L29/045 , H01L29/125 , H01L29/127 , H01L29/66469 , H01L31/035236 , H01L31/036 , H01S5/32 , H01S5/341 , H01S5/3412
摘要： A method of fabricating a compositional semiconductor device comprising a quantum well wire or quantum dot superlattice structure, in particular a device selected from the group comprising lasers, photodiodes, resonant tunnelling transistors, resonant tunneling diodes, far infrared detectors, far infrared emitters, high electron mobility transistors, solar cells, optical modulators, optically bistable devices and bipolar transistors, by epitaxial growth of the superlattice structure on a semiconductor substrate, is characterised in that the epitaxial growth is effected on a {311}, {211}, {111} or {110} substrate, and that the devices preferably have length and width dimensions less than 500 Å and especially less than 300 Å.
摘要翻译：一种制造包括量子阱线或量子点超晶格结构的组成半导体器件的方法，特别是选自包括激光器，光电二极管，谐振隧道晶体管，谐振隧道二极管，远红外探测器，远红外发射器，高电子迁移率晶体管，太阳能电池，光学调制器，光学双稳态器件和双极晶体管，通过半导体衬底上的超晶格结构的外延生长，其特征在于外延生长在ä311ü，ä211ü，ä111ü或ä110ü衬底上进行，这些装置的长度和宽度尺寸优选地小于500安格姆，特别是小于300安培。

10. 发明公开

EP0400559A3 Semiconductor optical device 失效
标题翻译：半导体光学器件
公开(公告)号：EP0400559A3
公开(公告)日：1991-12-27
申请号：EP90110127.9
申请日：1990-05-29
申请人： HITACHI, LTD.
发明人： Uomi, Kazuhisa , Sasaki, Shinji , Tsuchiya, Tomonobu , Chinone, Naoki , Ohtoshi, Tsukuru
IPC分类号： H01L29/15 , H01L31/0352 , H01L33/00 , H01S3/19 , H01S3/06
CPC分类号： H01S5/34 , B82Y20/00 , G02F1/017 , G02F1/01708 , H01L31/035236 , H01L33/06 , H01S5/06213 , H01S5/0622 , H01S5/12 , H01S5/125 , H01S5/2004 , H01S5/2009 , H01S5/227 , H01S5/2275 , H01S5/32 , H01S5/3211 , H01S5/3403 , H01S5/3406 , H01S5/3407 , H01S5/34306 , H01S5/34313 , H01S5/3434
摘要： An improvement for a semiconductor optical device having a region in which semiconductor or carriers in the semiconductor and light interact, for example, an active region for a semiconductor laser, an optical wave guide region of an optical modulator, etc. resides in a quantum well structure comprising a well region and a barrier region. A semiconductor optical device is remarkably improved in the degree of freedom of its design such as thickness and selection of material without deteriorating the quantum effect, by introducing a super lattice super-layer structure into the barrier region of the quantum well structure or defining the strain for the well region and the barrier region.

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