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1. 发明公开

EP1418154A2 Method and apparatus for vacuum-mounting a micro electro mechanical system on a substrate 审中-公开
标题翻译：对方法和装置真空安装在衬底上的微机电系统
公开(公告)号：EP1418154A2
公开(公告)日：2004-05-12
申请号：EP03256889.1
申请日：2003-10-30
申请人： Samsung Electronics Co., Ltd.
发明人： Jung, Kyu-dong , Choi, Hyung , Jun, Chan-bong , Kang, Seok-jin , Hong, Seog-woo , Chung, Seok-whan , Lee, Moon-chul , Lee, Eun-sung
IPC分类号： B81C5/00 , B81C1/00
CPC分类号： B81C1/00285
摘要： A method and apparatus for vacuum-mounting at least one micro electro mechanical system (MEMS) on a substrate includes a gas injecting section for injecting an inert gas into a vacuum chamber; a substrate aligning section for aligning a semiconductor substrate and a cover, the cover having a cavity formed therein and a getter attached to an interior surface of the cavity; a bonding section for bonding the semiconductor substrate and the cover together; and a controlling section for controlling the substrate aligning section to align the semiconductor and the cover, for controlling the gas injecting section to inject the inert gas into the vacuum chamber, and for controlling the bonding section to bond the semiconductor substrate and the cover together after the inert gas is injected.
摘要翻译：上的基片用于真空安装至少一个微机电系统的方法和装置（MEMS）包括用于惰性气体注入到真空室中注入部的气体; 用于对准半导体衬底和盖对准部一基底，具有空腔形成于其中盖和吸气剂附着于所述空腔的内表面上; 用于粘结半导体衬底和盖一起的接合部分; 以及控制部分，用于控制对准部以对准半导体和盖，用于控制注入部至所述惰性气体注入到真空室中的气体底物，以及用于控制所述接合部分接合所述半导体衬底和盖一起后该惰性气体被注入。

2. 发明公开

EP1471636A1 Film bulk acoustic resonator having an air gap and a method for manufacturing the same 有权
标题翻译： Dünnschicht-Volumenwellen-Resonator（FBAR）mit Luftspalt und Herstellungsmethodedafür
公开(公告)号：EP1471636A1
公开(公告)日：2004-10-27
申请号：EP04251965.2
申请日：2004-04-01
申请人： Samsung Electronics Co., Ltd.
发明人： Jun, Chan-bong , Seo, O-gweon
IPC分类号： H03H9/17
CPC分类号： H03H9/173 , H03H3/02 , H03H2003/021 , Y10T29/42
摘要： A film bulk acoustic resonator (FBAR) includes a resistance layer (112,114) deposited on the upper surface of a semiconductor substrate (111) and having a recess (130) therein, a membrane layer (116) on the upper surfaces of the resistance layer (112,114) and the recess, thereby forming an air gap between the membrane layer (116) and the semiconductor substrate (111), and a resonator (120) having a lower electrode (117), a piezoelectric layer (118), and an upper electrode (119) deposited on the membrane layer (116). The resistance layer (112,114) may include first (112) and second (114) resistance layers, the first resistance layer (112) having the recess (130) therein and the second resistance layer (114) being deposited on the upper surfaces of the recess (130). Thus, the air gap is formed without etching the semiconductor substrate (111), enhancing the resonant characteristics of the FBAR. Active and/or passive devices can be formed underneath the air gap to be integrated with the FBAR.
摘要翻译：电阻层（112）形成在半导体衬底（111）上。在凹陷（112'）上的电阻层上形成膜层以形成气隙。在膜层的上部形成有一个电极。在膜层和电极的上部形成有压电体层。另一电极形成在压电层的上部。薄膜体声波谐振器制造方法中还包括独立权利要求。

3. 发明公开

EP1315293A2 Fabrication of film bulk acoustic resonator 审中-公开
标题翻译： Herstellung einesDünnfilmresonatorsmit akustischen Volumenwellen
公开(公告)号：EP1315293A2
公开(公告)日：2003-05-28
申请号：EP02009756.4
申请日：2002-04-30
申请人： SAMSUNG ELECTRONICS CO. LTD.
发明人： Seo, O-gweon , Jun, Chan-bong , Park, Man-geum
IPC分类号： H03H3/02
CPC分类号： H03H9/173 , H03H3/02 , H03H2003/021 , Y10T29/42 , Y10T29/49128 , Y10T29/49155
摘要： A method of fabricating an air gap type Film Bulk Acoustic Resonator (FBAR) is provided. The FBAR fabrication method includes: (a) depositing and patterning a sub-electrode on a semiconductor substrate; (b) depositing and patterning a piezoelectric material layer on the sub-electrode; (c) depositing and patterning an upper electrode on the piezoelectric material layer; (d) forming a hole which passes through the upper electrode, the piezoelectric material layer and the sub-electrode; and (e) injecting a fluorine compound into the hole so that an air gap can be formed on the semiconductor substrate, and non-plasma etching the semiconductor substrate. Since the FBAR fabrication method does not include forming and eliminating the sacrificial layer in the fabrication process, the fabrication process is simplified. In addition, the air gap having the limitless frequency selectivity can be formed and the performance of the FBAR can be enhanced.
摘要翻译：提供了一种制造气隙型膜体积声谐振器（FBAR）的方法。 FBAR制造方法包括：（a）在半导体衬底上沉积和图案化子电极; （b）在子电极上沉积和图案化压电材料层; （c）在压电材料层上沉积和图案化上电极; （d）形成穿过上电极，压电材料层和副电极的孔; 和（e）将氟化合物注入到孔中，使得能够在半导体衬底上形成气隙，并且不等离子体蚀刻半导体衬底。由于FBAR制造方法不包括在制造工艺中形成和消除牺牲层，所以制造工艺简化。此外，可以形成具有无限频率选择性的气隙，并且可以提高FBAR的性能。

4. 发明授权

EP1471636B1 Film bulk acoustic resonator having an air gap and a method for manufacturing the same 有权
标题翻译：薄膜体声波谐振器（FBAR）具有气隙及其制造方法
公开(公告)号：EP1471636B1
公开(公告)日：2010-02-03
申请号：EP04251965.2
申请日：2004-04-01
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Jun, Chan-bong , Seo, O-gweon
IPC分类号： H03H9/17
CPC分类号： H03H9/173 , H03H3/02 , H03H2003/021 , Y10T29/42
摘要： A resistance layer (112) is formed on a semiconductor substrate (111). A membrane layer is formed on the resistance layer over a recess (112') to form an air gap. One electrode is formed on the upper portion of the membrane layer. A piezoelectric layer is formed on the upper portions of the membrane layer and the electrode. Another electrode is formed on the upper portion of the piezoelectric layer. An independent claim is also included for a film bulk acoustic resonator manufacturing method.

5. 发明公开

EP1908593A1 Inkjet printhead and method of manufaturing the same 审中-公开
标题翻译：喷墨打印头及其制造方法
公开(公告)号：EP1908593A1
公开(公告)日：2008-04-09
申请号：EP07103109.0
申请日：2007-02-27
申请人： Samsung Electronics Co., Ltd.
发明人： Shim, Dong-sik , Yoon, Yong-seop , Lee, Moon-chul , Jun, Chan-bong , Choi, Hyung , Jeong, Yong-won
IPC分类号： B41J2/14 , B41J2/16
CPC分类号： B41J2/1404 , B41J2/1603 , B41J2/1626 , B41J2/1631
摘要： There are provided an inkjet printhead and a method of manufacturing the same. The inkjet printhead includes a substrate through which an ink feed hole for supplying ink is formed; a chamber layer stacked above the substrate and including a plurality of ink chambers filled with ink supplied from the ink feed hole; and a nozzle layer stacked on the chamber layer, wherein a plurality of nozzles through which ink is ejected and a plurality of via holes are formed in the nozzle layer.
摘要翻译：提供了一种喷墨打印头及其制造方法。喷墨打印头包括基板，通过该基板形成用于供应墨水的供墨孔; 腔室层，所述腔室层堆叠在所述基板上方并且包括填充有从所述供墨孔供应的墨水的多个墨室; 以及堆叠在所述腔室层上的喷嘴层，其中喷射墨水的多个喷嘴和多个通孔形成在所述喷嘴层中。

6. 发明授权

EP1411025B1 Metal wiring method for an undercut 有权
标题翻译：底切孔金属布线方法
公开(公告)号：EP1411025B1
公开(公告)日：2007-09-19
申请号：EP03256418.9
申请日：2003-10-10
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Shong, Ci-moo , Chung, Seok-whan , Kang, Seok-jin , Lee, Moon-chul , Jung, Kyu-dong , Kim, Jong-seok , Jun, Chan-bong , Hong, Seog-woo , Kang, Jung-ho
IPC分类号： B81C1/00 , B81B7/00 , B81B1/00
CPC分类号： B81B7/0006 , H01L21/76877 , H01L23/5226 , H01L2924/0002 , H01L2924/00

7. 发明公开

EP1562229A3 Method for manufacturing metal structures having different heights 审中-公开
标题翻译： Methode zur Herstellung von Metallstrukturen unterschiedlicherHöhe
公开(公告)号：EP1562229A3
公开(公告)日：2005-08-17
申请号：EP04256510.1
申请日：2004-10-22
申请人： Samsung Electronics Co., Ltd.
发明人： Shim, Dong-sik , Choi, Hyung , Jun, Chan-bong , Song, Hoon
IPC分类号： H01L21/768
CPC分类号： H01L21/76885 , H01L21/2885 , H01L24/11 , H01L24/12 , H01L2224/0401 , H01L2224/0603 , H01L2224/13099 , H01L2224/1403 , H01L2924/01005 , H01L2924/01006 , H01L2924/01027 , H01L2924/01033 , H01L2924/01078 , H01L2924/181 , H01L2924/00
摘要： Disclosed is a method for forming a plurality of metal structures having different heights on a semiconductor substrate. The disclosed method for manufacturing a metal structure having different heights includes: forming a plurality of seed layers (20'a,20'b,20c), to have heights corresponding to the metal structure to be formed, on a semiconductor substrate so that those layers can be electrically separated, performing a plating process using a plating mold, and applying different currents to the respective seed layers so that the plating thickness can be adjusted for each of the seed layers. Accordingly, a plurality of metal structures having different heights can be obtained by a plating mold forming process and a plating process that are performed just once, respectively.
摘要翻译：公开了一种在半导体衬底上形成具有不同高度的多个金属结构体的方法。所公开的制造具有不同高度的金属结构的方法包括：在半导体衬底上形成多个种子层（20'a，20'b，20c）以具有与要形成的金属结构相对应的高度，使得那些层可以电分离，使用电镀模具进行电镀处理，并且向各种子层施加不同的电流，使得可以针对每个种子层调整镀层厚度。因此，通过仅分别进行一次的电镀模具成形工序和电镀工序，可以得到具有不同高度的多个金属结构体。

8. 发明公开

EP1411025A2 Metal wiring method for an undercut 有权
标题翻译：底切的金属接线方法
公开(公告)号：EP1411025A2
公开(公告)日：2004-04-21
申请号：EP03256418.9
申请日：2003-10-10
申请人： Samsung Electronics Co., Ltd.
发明人： Shong, Ci-moo , Chung, Seok-whan , Kang, Seok-jin , Lee, Moon-chul , Jung, Kyu-dong , Kim, Jong-seok , Jun, Chan-bong , Hong, Seog-woo , Kang, Jung-ho
IPC分类号： B81C1/00 , B81B7/00
CPC分类号： B81B7/0006 , H01L21/76877 , H01L23/5226 , H01L2924/0002 , H01L2924/00
摘要： A metal wiring method for an undercut in a MEMS packaging process includes disposing a MEMS element on a silicon substrate, welding a glass wafer to an upper portion of the silicon substrate having the MEMS element disposed thereon, the glass wafer having a hole formed therein for connecting a metal wiring, depositing a thin metal film for the metal wiring in the hole, and ion-milling the deposited thin metal film. By the ion-milling, the method is capable of connecting a metal wiring to a via hole having an undercut.
摘要翻译：在MEMS封装工艺中用于底切的金属布线方法包括：将MEMS元件设置在硅衬底上，将玻璃晶片焊接到其上设置有MEMS元件的硅衬底的上部，所述玻璃晶片具有形成在其中的孔，用于连接金属布线，在该孔中沉积用于金属布线的薄金属膜，以及离子铣削沉积的薄金属膜。通过离子铣削，该方法能够将金属布线连接到具有底切的通孔。

9. 发明公开

EP1418154A3 Method and apparatus for vacuum-mounting a micro electro mechanical system on a substrate 审中-公开
标题翻译：对方法和装置真空安装在衬底上的微机电系统
公开(公告)号：EP1418154A3
公开(公告)日：2005-08-31
申请号：EP03256889.1
申请日：2003-10-30
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Jung, Kyu-dong, 662-1701 Sinnamusil , Choi, Hyung , Jun, Chan-bong , Kang, Seok-jin , Hong, Seog-woo , Chung, Seok-whan , Lee, Moon-chul , Lee, Eun-sung
IPC分类号： B81C5/00 , B81C1/00
CPC分类号： B81C1/00285
摘要： A method and apparatus for vacuum-mounting at least one micro electro mechanical system (MEMS) on a substrate includes a gas injecting section for injecting an inert gas into a vacuum chamber; a substrate aligning section for aligning a semiconductor substrate and a cover, the cover having a cavity formed therein and a getter attached to an interior surface of the cavity; a bonding section for bonding the semiconductor substrate and the cover together; and a controlling section for controlling the substrate aligning section to align the semiconductor and the cover, for controlling the gas injecting section to inject the inert gas into the vacuum chamber, and for controlling the bonding section to bond the semiconductor substrate and the cover together after the inert gas is injected.

10. 发明公开

EP1562229A2 Method for manufacturing metal structures having different heights 审中-公开
标题翻译：用于制造具有不同高度的金属结构的方法
公开(公告)号：EP1562229A2
公开(公告)日：2005-08-10
申请号：EP04256510.1
申请日：2004-10-22
申请人： Samsung Electronics Co., Ltd.
发明人： Shim, Dong-sik , Choi, Hyung , Jun, Chan-bong , Song, Hoon
IPC分类号： H01L21/768
CPC分类号： H01L21/76885 , H01L21/2885 , H01L24/11 , H01L24/12 , H01L2224/0401 , H01L2224/0603 , H01L2224/13099 , H01L2224/1403 , H01L2924/01005 , H01L2924/01006 , H01L2924/01027 , H01L2924/01033 , H01L2924/01078 , H01L2924/181 , H01L2924/00
摘要： Disclosed is a method for forming a plurality of metal structures having different heights on a semiconductor substrate. The disclosed method for manufacturing a metal structure having different heights includes: forming a plurality of seed layers (20'a,20'b,20c), to have heights corresponding to the metal structure to be formed, on a semiconductor substrate so that those layers can be electrically separated, performing a plating process using a plating mold, and applying different currents to the respective seed layers so that the plating thickness can be adjusted for each of the seed layers. Accordingly, a plurality of metal structures having different heights can be obtained by a plating mold forming process and a plating process that are performed just once, respectively.
摘要翻译：公开了一种用于在半导体衬底上形成具有不同高度的多个金属结构的方法。所公开的用于制造具有不同高度的金属结构的方法包括：在半导体衬底上形成多个种子层（20'a，20'b，20c）以具有与要形成的金属结构对应的高度，使得那些层可以电分离，使用电镀模具执行电镀工艺，并且向各个籽晶层施加不同的电流，使得可以针对每个种子层调节电镀厚度。因此，可以通过分别执行一次的镀模成形工艺和镀工艺来获得具有不同高度的多个金属结构。

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