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1. 发明公开

EP1315293A3 Fabrication of film bulk acoustic resonator 审中-公开
标题翻译：生产具有声体波的薄膜谐振器
公开(公告)号：EP1315293A3
公开(公告)日：2004-05-26
申请号：EP02009756.4
申请日：2002-04-30
申请人： SAMSUNG ELECTRONICS CO. LTD.
发明人： Seo, O-gweon , Jun, Chan-bong , Park, Man-geum
IPC分类号： H03H3/02 , H03H9/17
CPC分类号： H03H9/173 , H03H3/02 , H03H2003/021 , Y10T29/42 , Y10T29/49128 , Y10T29/49155
摘要： A method of fabricating an air gap type Film Bulk Acoustic Resonator (FBAR) is provided. The FBAR fabrication method includes: (a) depositing and patterning a sub-electrode on a semiconductor substrate; (b) depositing and patterning a piezoelectric material layer on the sub-electrode; (c) depositing and patterning an upper electrode on the piezoelectric material layer; (d) forming a hole which passes through the upper electrode, the piezoelectric material layer and the sub-electrode; and (e) injecting a fluorine compound into the hole so that an air gap can be formed on the semiconductor substrate, and non-plasma etching the semiconductor substrate. Since the FBAR fabrication method does not include forming and eliminating the sacrificial layer in the fabrication process, the fabrication process is simplified. In addition, the air gap having the limitless frequency selectivity can be formed and the performance of the FBAR can be enhanced.

2. 发明公开

EP1315293A2 Fabrication of film bulk acoustic resonator 审中-公开
标题翻译： Herstellung einesDünnfilmresonatorsmit akustischen Volumenwellen
公开(公告)号：EP1315293A2
公开(公告)日：2003-05-28
申请号：EP02009756.4
申请日：2002-04-30
申请人： SAMSUNG ELECTRONICS CO. LTD.
发明人： Seo, O-gweon , Jun, Chan-bong , Park, Man-geum
IPC分类号： H03H3/02
CPC分类号： H03H9/173 , H03H3/02 , H03H2003/021 , Y10T29/42 , Y10T29/49128 , Y10T29/49155
摘要： A method of fabricating an air gap type Film Bulk Acoustic Resonator (FBAR) is provided. The FBAR fabrication method includes: (a) depositing and patterning a sub-electrode on a semiconductor substrate; (b) depositing and patterning a piezoelectric material layer on the sub-electrode; (c) depositing and patterning an upper electrode on the piezoelectric material layer; (d) forming a hole which passes through the upper electrode, the piezoelectric material layer and the sub-electrode; and (e) injecting a fluorine compound into the hole so that an air gap can be formed on the semiconductor substrate, and non-plasma etching the semiconductor substrate. Since the FBAR fabrication method does not include forming and eliminating the sacrificial layer in the fabrication process, the fabrication process is simplified. In addition, the air gap having the limitless frequency selectivity can be formed and the performance of the FBAR can be enhanced.
摘要翻译：提供了一种制造气隙型膜体积声谐振器（FBAR）的方法。 FBAR制造方法包括：（a）在半导体衬底上沉积和图案化子电极; （b）在子电极上沉积和图案化压电材料层; （c）在压电材料层上沉积和图案化上电极; （d）形成穿过上电极，压电材料层和副电极的孔; 和（e）将氟化合物注入到孔中，使得能够在半导体衬底上形成气隙，并且不等离子体蚀刻半导体衬底。由于FBAR制造方法不包括在制造工艺中形成和消除牺牲层，所以制造工艺简化。此外，可以形成具有无限频率选择性的气隙，并且可以提高FBAR的性能。

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