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1. 发明公开

EP4453996A1 PROCEDE DE FABRICATION D'UN SUBSTRAT DONNEUR 失效
公开(公告)号：EP4453996A1
公开(公告)日：2024-10-30
申请号：EP22838896.3
申请日：2022-12-23
申请人： SOITEC
发明人： THIBERT, Sebastien , GAUMER, Clement , CHARLES-ALFRED, Cedric
IPC分类号： H01L21/02 , H01L21/20 , H01L21/762 , H10N30/073 , H03H3/02 , H03H3/08 , H03H9/02
CPC分类号： H01L21/76254 , H03H3/02 , H01L21/2007 , H03H3/08 , H03H9/02574 , H10N30/073 , H01L21/02002

2. 发明公开

EP4407868A8 CRYSTAL OSCILLATOR AND METHOD FOR MAKING THE SAME 审中-公开转让
公开(公告)号：EP4407868A8
公开(公告)日：2024-10-16
申请号：EP24150519.7
申请日：2024-01-05
申请人： Aker Technology Co., Ltd.
发明人： HORNG, Ray-Hua , LIN, Yi-Lun
IPC分类号： H03H3/02 , H03H9/19
CPC分类号： H03H3/02 , H03H9/19
摘要： A crystal oscillator includes an oscillating main body (2), a top electrode layer (3), a bottom electrode layer (4), and a magnetic layer (5). The oscillating main body (2) includes a thinned portion (21) and a side portion (22). The thinned portion (21) has upper and lower surfaces (211, 212) respectively defining upper and lower surface work portions (2111, 2121). The side portion (22) is connected to one end of the thinned portion (21). The top electrode layer (3) is disposed on the upper surface (211), and includes a top work portion (31) disposed on the upper surface work portion (2111). The bottom electrode layer (4) is disposed on the lower surface (212), and includes a bottom work portion (41) disposed on the lower surface work portion (2121). The magnetic layer (5) is disposed on the side portion (22), and is spaced apart from the top electrode layer (3).

3. 发明公开

EP4391374A1 PROCÉDÉ DE RÉALISATION D'UN FILTRE À ONDES ACOUSTIQUES DE VOLUME 审中-实审
公开(公告)号：EP4391374A1
公开(公告)日：2024-06-26
申请号：EP23215764.4
申请日：2023-12-12
申请人： Commissariat à l'énergie atomique et aux énergies alternatives
发明人： REINHARDT, Alexandre , BOUSQUET, Marie
IPC分类号： H03H3/04 , H03H3/02 , H03H9/02 , H03H9/56
CPC分类号： H03H3/02 , H03H9/02015 , H03H3/04 , H03H2003/042820130101 , H03H2003/02120130101 , H03H2003/02520130101 , H03H9/568 , H03H2003/047120130101
摘要： Un aspect de l'invention concerne un procédé de réalisation d'un filtre passe-bande comprenant un premier résonateur (1) à ondes acoustiques de volume et un deuxième résonateur (2) à ondes acoustiques de volume, la fréquence de résonance du deuxième résonateur étant décalée de la fréquence de résonance du premier résonateur avec un décalage prédéterminé, le procédé comprenant les étapes de :
- fourniture d'un substrat (10) piézoélectrique sur isolant,
- formation d'une électrode inférieure (31) du premier résonateur (1) et d'une électrode inférieure (32) du deuxième résonateur (2),
- assemblage par collage du substrat donneur (10) sur un substrat receveur (50),
- retrait du substrat donneur (10) avec arrêt sur la couche piézoélectrique (13),
- formation d'une électrode supérieure (33) du premier résonateur (1) et d'une électrode supérieure (34),

la formation des électrodes inférieures (31,32) étant précédée d'une étape de formation d'un motif (20) de surcharge massique au niveau de la deuxième zone (134),
et/ou la formation des électrodes supérieures (33,34) étant précédée d'une étape de formation d'un motif (21) de surcharge massique au niveau de la deuxième zone (134),
l'épaisseur totale du ou des motifs (20,21) de surcharge massique étant choisie pour décaler la fréquence de résonance du deuxième résonateur avec le décalage prédéterminé.

5. 发明公开

EP4333297A1 RESONATOR AND PREPARATION METHOD THEREFOR 审中-实审
公开(公告)号：EP4333297A1
公开(公告)日：2024-03-06
申请号：EP22804095.2
申请日：2022-05-23
申请人： Huawei Technologies Co., Ltd.
发明人： WU, Wei , LI, Hao , WANG, Jinhui , LI, Wei
IPC分类号： H03H9/02 , H03H3/02
摘要： A resonator is provided. The resonator includes a resonance layer, a substrate, and a barrier layer. The barrier layer is located on the substrate, and the barrier layer and the substrate form a cavity. The cavity is configured to accommodate the resonance layer. The barrier layer includes a top wall and a side wall, and an inner surface of the side wall surrounds the resonance layer. An outer surface of the side wall includes a groove, and the groove surrounds the side wall. Based on the foregoing implementation, complexity of a machining process of the resonator is reduced, machining costs are reduced, and reliability of the resonator is improved on the basis of ensuring miniaturization of the resonator.

6. 发明公开

EP4205279A1 PACKAGE COMPRISING AN INTEGRATED PASSIVE DEVICE CONFIGURED AS A CAP FOR A FILTER 审中-实审
公开(公告)号：EP4205279A1
公开(公告)日：2023-07-05
申请号：EP21762901.3
申请日：2021-08-06
申请人： QUALCOMM INCORPORATED
发明人： YUN, Changhan Hobie , PARK, Nosun , KIM, Daniel Daeik , THADESAR, Paragkumar Ajaybhai , VADHAVKAR, Sameer Sunil
IPC分类号： H03H9/05 , H03H9/10 , H03H3/02 , H03H3/08

7. 发明公开

EP4152611A1 CRYSTAL OSCILLATOR, AND METHOD FOR MAKING THE SAME 有权转让
公开(公告)号：EP4152611A1
公开(公告)日：2023-03-22
申请号：EP22191660.4
申请日：2022-08-23
申请人： National Yang Ming Chiao Tung University , Aker Technoology Co., Ltd.
发明人： HORNG, Ray-Hua , LIN, Yi-Lun
IPC分类号： H03H3/02 , H03H9/02 , H03H9/05 , H03H9/10 , H03H3/04
摘要： A crystal oscillator (200) includes a piezoelectric substrate (2), a first electrode (3), a second electrode (4), and a support frame (5). The first electrode (3) includes a first electrode portion (31) disposed on a first surface (21) of the piezoelectric substrate (2). The second electrode (4) is disposed on a second surface (22) of the piezoelectric substrate (2) opposite to the first surface (21) of the piezoelectric substrate (2). The support frame (5) is made of a photoresist material, and is disposed on the second surface (22). The support frame (5) surrounds the second electrode portion (41). At least a portion of the second extending electrode portion (42) is located outside the support frame (5). A method for making the crystal oscillator (200) is also provided herein.

8. 发明公开

EP4142152A1 FILTER, BULK ACOUSTIC WAVE RESONATOR ASSEMBLY AND METHOD FOR MANUFACTURING SAME, AND ELECTRONIC DEVICE 审中-实审
公开(公告)号：EP4142152A1
公开(公告)日：2023-03-01
申请号：EP21792440.6
申请日：2021-04-20
申请人： ROFS MICROSYSTEM (TIANJIN) CO., LTD.
发明人： XU, Yang , PANG, Wei , HAO, Long
IPC分类号： H03H3/02 , H03H9/02 , H03H9/17
摘要： Provided is a filter, including: a plurality of serial resonators, and a plurality of parallel resonators, wherein each resonator comprises a substrate (101), an acoustic mirror (103), a bottom electrode (102), a top electrode (106), and a piezoelectric layer (104). The top electrode (106) of at least one serial resonator and the top electrode (106) of at least one parallel resonator have or are provided with raised portions respectively at a connecting end of the top electrode (106) and a connecting end of a non-top electrode, and the top surface of the raised portion is beyond the top surface of an inner side portion of the top electrode (106). Each resonator having the raised portion includes a conductive layer which is in contact with the corresponding electrode in the thickness direction of the resonator, wherein the conductive layer enables the raised portion to be beyond the top surface of the inner side portion of the top electrode (106), and the thickness of the conductive layer of the at least one serial resonator is greater than the thickness of the conductive layer of the at least one parallel resonator. Moreover, the present application further relates to a bulk acoustic wave resonator assembly and a method for manufacturing the bulk acoustic wave resonator assembly.

9. 发明公开

EP4099564A1 BULK ACOUSTIC WAVE RESONATOR AND FABRICATION METHOD THEREFOR 审中-实审
公开(公告)号：EP4099564A1
公开(公告)日：2022-12-07
申请号：EP21792573.4
申请日：2021-04-19
申请人： Suzhou Huntersun Electronics Co., Ltd.
发明人： WU, Ming , TANG, Zhaoyun , YANG, Qinghua , LAI, Zhiguo , WANG, Jiayou
IPC分类号： H03H3/02 , H03H9/205 , H03H9/02
摘要： A BAW resonator includes: a piezoelectric film array, including multiple piezoelectric films between a substrate of a chip and a capping layer on the top, where multiple first cavities are provided between adjacent piezoelectric films in a vertical direction, between the piezoelectric films and the capping layer, and between the piezoelectric films and the substrate, second cavities are shared between adjacent piezoelectric films in a first direction in a horizontal plane, and third cavities are shared between adjacent piezoelectric films in a second direction in the horizontal plane; multiple electrode layers, covering at least the top surface and bottom surface of each of the piezoelectric films; and multiple electrode interconnection layers, connected to the electrode layers on the bottom surfaces of the piezoelectric films along sidewalls of the third cavities.

10. 发明公开

EP4027518A1 BULK ACOUSTIC WAVE RESONANCE DEVICE AND BULK ACOUSTIC WAVE FILTER 审中-实审
公开(公告)号：EP4027518A1
公开(公告)日：2022-07-13
申请号：EP19944132.0
申请日：2019-09-05
申请人： Changzhou Chemsemi Co., Ltd.
发明人： LIU, Yuhao
IPC分类号： H03H9/17 , H03H3/02
摘要： A bulk acoustic wave resonance device (200), comprising: a first layer, the first layer comprising a first cavity on a first side; a first electrode layer, located on the first side, a first end of the first electrode layer being in contact with the first layer, and a second end of the first electrode layer being located in the first cavity; a second layer, located on the first electrode layer; and a second electrode layer, located on the second layer, a first portion on the first electrode layer that coincides with the second electrode layer being located in the first cavity. Since a resonance region (209) does not coincide with the first layer, and the resonance region (209) is suspended relative to the first cavity, so that a difference between acoustic impedances of the resonance region (209) and a non-resonance region can be increased, thereby increasing a Q value of the resonance device. In addition, the second layer comprises a piezoelectric layer (205), and the piezoelectric layer (205) does not comprise a significantly steered crystal, thereby facilitating increasing an electromechanical coupling coefficient and the Q value of the resonance device.

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