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2. 发明公开

EP4333297A1 RESONATOR AND PREPARATION METHOD THEREFOR 审中-公开
公开(公告)号：EP4333297A1
公开(公告)日：2024-03-06
申请号：EP22804095.2
申请日：2022-05-23
申请人： Huawei Technologies Co., Ltd.
发明人： WU, Wei , LI, Hao , WANG, Jinhui , LI, Wei
IPC分类号： H03H9/02 , H03H3/02
摘要： A resonator is provided. The resonator includes a resonance layer, a substrate, and a barrier layer. The barrier layer is located on the substrate, and the barrier layer and the substrate form a cavity. The cavity is configured to accommodate the resonance layer. The barrier layer includes a top wall and a side wall, and an inner surface of the side wall surrounds the resonance layer. An outer surface of the side wall includes a groove, and the groove surrounds the side wall. Based on the foregoing implementation, complexity of a machining process of the resonator is reduced, machining costs are reduced, and reliability of the resonator is improved on the basis of ensuring miniaturization of the resonator.

3. 发明公开

EP4205279A1 PACKAGE COMPRISING AN INTEGRATED PASSIVE DEVICE CONFIGURED AS A CAP FOR A FILTER 审中-公开
公开(公告)号：EP4205279A1
公开(公告)日：2023-07-05
申请号：EP21762901.3
申请日：2021-08-06
申请人： QUALCOMM INCORPORATED
发明人： YUN, Changhan Hobie , PARK, Nosun , KIM, Daniel Daeik , THADESAR, Paragkumar Ajaybhai , VADHAVKAR, Sameer Sunil
IPC分类号： H03H9/05 , H03H9/10 , H03H3/02 , H03H3/08

4. 发明公开

EP4152611A1 CRYSTAL OSCILLATOR, AND METHOD FOR MAKING THE SAME 审中-公开
公开(公告)号：EP4152611A1
公开(公告)日：2023-03-22
申请号：EP22191660.4
申请日：2022-08-23
申请人： National Yang Ming Chiao Tung University , Aker Technoology Co., Ltd.
发明人： HORNG, Ray-Hua , LIN, Yi-Lun
IPC分类号： H03H3/02 , H03H9/02 , H03H9/05 , H03H9/10 , H03H3/04
摘要： A crystal oscillator (200) includes a piezoelectric substrate (2), a first electrode (3), a second electrode (4), and a support frame (5). The first electrode (3) includes a first electrode portion (31) disposed on a first surface (21) of the piezoelectric substrate (2). The second electrode (4) is disposed on a second surface (22) of the piezoelectric substrate (2) opposite to the first surface (21) of the piezoelectric substrate (2). The support frame (5) is made of a photoresist material, and is disposed on the second surface (22). The support frame (5) surrounds the second electrode portion (41). At least a portion of the second extending electrode portion (42) is located outside the support frame (5). A method for making the crystal oscillator (200) is also provided herein.

5. 发明公开

EP4142152A1 FILTER, BULK ACOUSTIC WAVE RESONATOR ASSEMBLY AND METHOD FOR MANUFACTURING SAME, AND ELECTRONIC DEVICE 审中-公开
公开(公告)号：EP4142152A1
公开(公告)日：2023-03-01
申请号：EP21792440.6
申请日：2021-04-20
申请人： ROFS MICROSYSTEM (TIANJIN) CO., LTD.
发明人： XU, Yang , PANG, Wei , HAO, Long
IPC分类号： H03H3/02 , H03H9/02 , H03H9/17
摘要： Provided is a filter, including: a plurality of serial resonators, and a plurality of parallel resonators, wherein each resonator comprises a substrate (101), an acoustic mirror (103), a bottom electrode (102), a top electrode (106), and a piezoelectric layer (104). The top electrode (106) of at least one serial resonator and the top electrode (106) of at least one parallel resonator have or are provided with raised portions respectively at a connecting end of the top electrode (106) and a connecting end of a non-top electrode, and the top surface of the raised portion is beyond the top surface of an inner side portion of the top electrode (106). Each resonator having the raised portion includes a conductive layer which is in contact with the corresponding electrode in the thickness direction of the resonator, wherein the conductive layer enables the raised portion to be beyond the top surface of the inner side portion of the top electrode (106), and the thickness of the conductive layer of the at least one serial resonator is greater than the thickness of the conductive layer of the at least one parallel resonator. Moreover, the present application further relates to a bulk acoustic wave resonator assembly and a method for manufacturing the bulk acoustic wave resonator assembly.

6. 发明公开

EP4099564A1 BULK ACOUSTIC WAVE RESONATOR AND FABRICATION METHOD THEREFOR 审中-公开
公开(公告)号：EP4099564A1
公开(公告)日：2022-12-07
申请号：EP21792573.4
申请日：2021-04-19
申请人： Suzhou Huntersun Electronics Co., Ltd.
发明人： WU, Ming , TANG, Zhaoyun , YANG, Qinghua , LAI, Zhiguo , WANG, Jiayou
IPC分类号： H03H3/02 , H03H9/205 , H03H9/02
摘要： A BAW resonator includes: a piezoelectric film array, including multiple piezoelectric films between a substrate of a chip and a capping layer on the top, where multiple first cavities are provided between adjacent piezoelectric films in a vertical direction, between the piezoelectric films and the capping layer, and between the piezoelectric films and the substrate, second cavities are shared between adjacent piezoelectric films in a first direction in a horizontal plane, and third cavities are shared between adjacent piezoelectric films in a second direction in the horizontal plane; multiple electrode layers, covering at least the top surface and bottom surface of each of the piezoelectric films; and multiple electrode interconnection layers, connected to the electrode layers on the bottom surfaces of the piezoelectric films along sidewalls of the third cavities.

7. 发明公开

EP4027518A1 BULK ACOUSTIC WAVE RESONANCE DEVICE AND BULK ACOUSTIC WAVE FILTER 审中-公开
公开(公告)号：EP4027518A1
公开(公告)日：2022-07-13
申请号：EP19944132.0
申请日：2019-09-05
申请人： Changzhou Chemsemi Co., Ltd.
发明人： LIU, Yuhao
IPC分类号： H03H9/17 , H03H3/02
摘要： A bulk acoustic wave resonance device (200), comprising: a first layer, the first layer comprising a first cavity on a first side; a first electrode layer, located on the first side, a first end of the first electrode layer being in contact with the first layer, and a second end of the first electrode layer being located in the first cavity; a second layer, located on the first electrode layer; and a second electrode layer, located on the second layer, a first portion on the first electrode layer that coincides with the second electrode layer being located in the first cavity. Since a resonance region (209) does not coincide with the first layer, and the resonance region (209) is suspended relative to the first cavity, so that a difference between acoustic impedances of the resonance region (209) and a non-resonance region can be increased, thereby increasing a Q value of the resonance device. In addition, the second layer comprises a piezoelectric layer (205), and the piezoelectric layer (205) does not comprise a significantly steered crystal, thereby facilitating increasing an electromechanical coupling coefficient and the Q value of the resonance device.

8. 发明公开

EP4027515A1 METHOD FOR FORMING BULK ACOUSTIC WAVE RESONANCE DEVICE 审中-实审
公开(公告)号：EP4027515A1
公开(公告)日：2022-07-13
申请号：EP19944046.2
申请日：2019-09-05
申请人： Changzhou Chemsemi Co., Ltd.
发明人： LIU, Yuhao
IPC分类号： H03H3/02 , H03H9/17 , H01L41/18
摘要： A method for forming a bulk acoustic wave resonance device, comprising: (S201) forming a first layer, which comprises: providing a first substrate; forming a piezoelectric layer located on the first substrate; forming a first electrode layer located on the piezoelectric layer; and forming a cavity pre-treatment layer located on the piezoelectric layer, used for forming a cavity, and at least covering a first end of the first electrode layer, wherein a first side of the first layer corresponds to the side of the first substrate; a second side of the first layer corresponds to the side of the cavity pre-treatment layer; (S203) forming a second layer, which comprises: providing a second substrate; (S205) connecting the first layer to the second layer, the second layer being located at the second side; (S207) removing the first substrate, so that the first side corresponds to the side of the piezoelectric layer; and (S209) forming a second electrode layer located at the first side and contacting with the piezoelectric layer. The formed piezoelectric layer does not comprise a crystal that is significantly turned so as to facilitate increasing the electromechanical coupling coefficient and the Q value of the resonance device. In addition, the second substrate processing and the active layer processing can be respectively performed, and are flexible.

9. 发明公开

EP3995454A1 PIEZOELECTRIC FILM, PIEZOELECTRIC LAYERED BODY, PIEZOELECTRIC ELEMENT, AND METHOD FOR MANUFACTURING PIEZOELECTRIC LAYERED BODY 审中-公开
公开(公告)号：EP3995454A1
公开(公告)日：2022-05-11
申请号：EP20835288.0
申请日：2020-07-02
申请人： Sumitomo Chemical Company, Limited
发明人： KURODA, Toshiaki , SHIBATA, Kenji , WATANABE, Kazutoshi , KIMURA, Takeshi
IPC分类号： C01G45/00 , H03H3/02 , H03H3/08 , H01L41/09 , H01L41/113 , H01L41/187 , H01L41/37 , C23C14/08 , H03H9/17 , H03H9/25
摘要： A piezoelectric stack including: a substrate; an electrode film; and a piezoelectric film as a poly-crystal film comprising an alkali niobium oxide of a perovskite structure represented by a composition formula of (K 1-x Na x )NbO 3 (0

10. 发明公开

EP3979495A1 RESONATOR HAVING MULTILAYER PROTRUSION STRUCTURE AND MANUFACTURING METHOD THEREFOR, FILTER, AND ELECTRONIC DEVICE 审中-公开
公开(公告)号：EP3979495A1
公开(公告)日：2022-04-06
申请号：EP20813725.7
申请日：2020-04-24
申请人： Tianjin University , Rofs Microsystem (Tianjin) Co., Ltd
发明人： ZHANG, Menglun , PANG, Wei , YANG, Qingrui
IPC分类号： H03H3/02 , H03H9/02 , H03H9/25
摘要： A bulk acoustic wave resonator, comprising: a substrate; an acoustic mirror; a bottom electrode, provided on the substrate; a top electrode (50), opposite to the bottom electrode and having an electrode connection portion; and a piezoelectric layer (40), provided on the bottom electrode and between the bottom electrode and the top electrode (50). At least a first protrusion structure (52) and a second protrusion structure (53) stacked in the thickness direction of the substrate are provided at the edge of the top electrode (50); the first protrusion structure (52) is disposed on the top electrode (50), and the second protrusion structure (53) is disposed on the first protrusion structure (52); the first protrusion structure (52) has a first width (W1), the second protrusion structure (53) has a second width (W2), and the ratio of the first width (W1) to the second width (W2) is in a range of 7:1 to 9:7. Also provided are a filter and an electronic device having the filter. Also provided is a manufacturing method for the bulk acoustic wave resonator, comprising the steps: selecting the first width (W1) of the first protrusion structure (52) and the second width (W2) of the second protrusion structure (53), so that the ratio of the first width (W1) to the second width (W2) is in a range of 7:1 to 9:7.

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