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1. 发明公开

EP2417626A2 MULTIFREQUENCY CAPACITIVELY COUPLED PLASMA ETCH CHAMBER 审中-公开
标题翻译：等离子刻蚀与电容式多频率和功率
公开(公告)号：EP2417626A2
公开(公告)日：2012-02-15
申请号：EP10762275.5
申请日：2010-04-06
申请人： LAM Research Corporation
发明人： MARAKHTANOV, Alexei , DHINDSA, Rajinder , KOSHIISHI, Akira , FISCHER, Andreas
IPC分类号： H01L21/3065 , H05H1/34 , H05H1/36
CPC分类号： H01L21/2633 , C23C16/5096 , H01J37/32091 , H01J37/32165 , H01J37/32174 , H01J37/32532 , H01J37/32577
摘要： A plasma processing system for use with a gas. The plasma processing system comprises a first electrode, a second electrode, a gas input port, a power source and a passive circuit. The gas input port is operable to provide the gas between the first electrode and the second electrode. The power source is operable to ignite plasma from the gas between the first electrode and the second electrode. The passive circuit is coupled to the second electrode and is configured to adjust one or more of an impedance, a voltage potential, and a DC bias potential of the second electrode. The passive radio frequency circuit comprises a capacitor arranged in parallel with an inductor.

2. 发明公开

EP2380412A2 METHODS AND APPARATUS FOR DUAL CONFINEMENT AND ULTRA-HIGH PRESSURE IN AN ADJUSTABLE GAP PLASMA CHAMBER 有权
标题翻译：方法和设备的双重保障特高压在玻璃可调节的等离子体室
公开(公告)号：EP2380412A2
公开(公告)日：2011-10-26
申请号：EP09837887.0
申请日：2009-12-16
申请人： LAM Research Corporation
发明人： FISCHER, Andreas , HUDSON, Eric
IPC分类号： H05H1/34
CPC分类号： H01J37/32091 , H01J37/32449 , H01J37/32532 , H01J37/32541 , H01J37/32568 , H01J37/32623 , H01J37/32642 , H01J37/32816 , H01J37/3299 , H01L21/3065
摘要： A plasma processing system having a plasma processing chamber configured for processing a substrate is provided. The plasma processing system includes at least an upper electrode and a lower electrode for processing the substrate. The substrate is disposed on the lower electrode during plasma processing, where the upper electrode and the substrate forms a first gap. The plasma processing system also includes an upper electrode peripheral extension (UE-PE). The UE-PE is mechanically coupled to a periphery of the upper electrode, where the UE-PE is configured to be non-coplanar with the upper electrode. The plasma processing system further includes a cover ring. The cover ring is configured to concentrically surround the lower electrode, where the UE-PE and the cover ring forms a second gap.
摘要翻译：提供了一种具有用于处理衬底配置的等离子体处理室的等离子体处理系统。所述等离子体处理系统包括至少在上部电极和用于处理基片的下部电极。基板被等离子体处理，其中，所述上部电极和所述基板形成第一间隙期间设置在所述下电极。因此，该等离子体处理系统包括在上电极外周延伸部（UE-PE）。的UE-PE被机械地耦合到上部电极，其中UE-PE被配置为不共面与所述上部电极的外周。所述等离子体处理系统包括另外coverring。盖环被配置为同心围绕所述下电极，其中，UE-PE和盖环形成第二间隙。

3. 发明授权

EP1620876B1 RF PULSING OF A NARROW GAP CAPACITIVELY COUPLED REACTOR 失效
标题翻译：电容性RF脉冲耦合窄间隙REACTOR
公开(公告)号：EP1620876B1
公开(公告)日：2010-06-09
申请号：EP04751199.3
申请日：2004-04-29
申请人： LAM RESEARCH CORPORATION
发明人： LOEWENHARDT, Peter , SRINIVASAN, Mukund , FISCHER, Andreas
IPC分类号： H01J37/32
CPC分类号： H01J37/32137 , H01J37/32082 , H01J37/32165

4. 发明公开

EP1989007A2 INTEGRATED CAPACITIVE AND INDUCTIVE POWER SOURCES FOR A PLASMA ETCHING CHAMBER 审中-公开
标题翻译：集成电容性和电感性电源的一种等离子蚀刻
公开(公告)号：EP1989007A2
公开(公告)日：2008-11-12
申请号：EP07751017.0
申请日：2007-02-16
申请人： Lam Research Corporation
发明人： DHINDSA, Rajinder , SRINIVASAN, Mukund , TAKESHITA, Kenji , MARAKHTANOV, Alexei , FISCHER, Andreas
IPC分类号： B08B6/00
CPC分类号： H01J37/32862 , H01J37/32091 , H01J37/321 , H01J37/32642
摘要： Broadly speaking, the present invention fills these needs by providing an improved chamber cleaning mechanism. The present invention can also be used to provide additional knobs to tune the etch processes. In one embodiment, a plasma processing chamber configured to generate a plasma includes a bottom electrode assembly with an bottom electrode, wherein the bottom electrode is configured to receive a substrate. The plasma processing chamber includes a top electrode assembly with a top electrode and an inductive coil surrounding the top electrode. The inductive coil is configured to convert a gas into a plasma within a region defined within the chamber, wherein the region is outside an area defined above a top surface of the bottom electrode.

5. 发明公开

EP1512164A1 MULTI-PART ELECTRODE FOR A SEMICONDUCTOR PROCESSING PLASMA REACTOR AND METHOD OF REPLACING A PORTION OF A MUTLI-PART ELECTRODE 有权
标题翻译：多片电极的等离子体反应器的半导体处理和方法用于替换多电极的一部分
公开(公告)号：EP1512164A1
公开(公告)日：2005-03-09
申请号：EP03729095.4
申请日：2003-05-23
申请人： LAM RESEARCH CORPORATION
发明人： FISCHER, Andreas , KENNEDY, William, S. , LOEWENHARDT, Peter , TRUSSELL, David
IPC分类号： H01J37/32
CPC分类号： H01J37/32541 , H01J37/32009
摘要： An improved upper electrode system has a multi-part electrode in which a central portion (110) of the electrode having high wear is replaceable independent of an outer peripheral portion (114) of the electrode. The upper electrode can be used in plasma processing systems for processing semiconductor substrates, such as by etching or CVD. The multi-part upper electrode system is particularly useful for large size wafer processsing chambers, such as 300 mm wafer processing chambers for which monolithic electrodes are unavailable or costly.

6. 发明公开

EP1323180A2 SYSTEM, APPARATUS, AND METHOD FOR PROCESSING WAFER USING SINGLE FREQUENCY RF POWER IN PLASMA PROCESSING CHAMBER 有权
标题翻译：系统，装置及晶圆处理方法使用MONO频率RF输出功率是在等离子体处理室
公开(公告)号：EP1323180A2
公开(公告)日：2003-07-02
申请号：EP01981834.3
申请日：2001-10-05
申请人： LAM RESEARCH CORPORATION
发明人： KUTHI, Andras , FISCHER, Andreas
IPC分类号： H01J37/32
CPC分类号： H01J37/32146 , H01J37/32082
摘要： The present invention provides a system, apparatus, and method for processing a wafer using a single frequency RF power in a plasma processing chamber. The plasma processing system includes a modulated RF power generator, a plasma processing chamber, and a match network. The modulated RF power generator is arranged to generate a modulated RF power. The plasma processing chamber is arranged to receive the modulated RF power for processing the wafer and is characterized by an internal impedance during the plasma processing. The plasma processing chamber includes an electrostatic chuck for holding the wafer in place with the electrostatic chuck including a first electrode disposed under the wafer for receiving the modulated RF power. The plasma processing chamber further includes a second electrode disposed over the wafer. The modulated RF power generates plasma and ion bombardment energy for processing the wafer. The match network is coupled between the modulated RF power generator and the plasma processing chamber to receive and transmit the modulated RF power from the modulated RF power generator to the plasma processing chamber. The match network is further configured to match an impedance of the modulated RF power generator to the internal impedance of the plasma processing chamber.

7. 发明公开

EP3586357A1 CONTROL OF DIRECTIONALITY IN ATOMIC LAYER ETCHING 审中-实审
公开(公告)号：EP3586357A1
公开(公告)日：2020-01-01
申请号：EP18758014.7
申请日：2018-02-26
申请人： LAM Research Corporation
发明人： FISCHER, Andreas , LILL, Thorsten , JANEK, Richard
IPC分类号： H01L21/3065 , H01L21/311 , H01L21/3213

8. 发明授权

EP1706898B1 TEMPERATURE CONTROLLED HOT EDGE RING ASSEMBLY FOR REDUCING PLASMA REACTOR ETCH RATE DRIFT 有权转让
标题翻译：用于降低等离子体反应器蚀刻速率漂移的温度控制热边缘环组装
公开(公告)号：EP1706898B1
公开(公告)日：2017-09-20
申请号：EP04818010.3
申请日：2004-12-10
申请人： LAM RESEARCH CORPORATION
发明人： FISCHER, Andreas , LOEWENHARDT, Peter
IPC分类号： H01L21/67 , H01L21/687 , H01J37/32
CPC分类号： H01L21/68735 , H01J37/32642 , H01L21/67069

9. 发明授权

EP1399944B1 APPARATUS AND METHOD FOR RADIO FREQUENCY DE-COUPLING AND BIAS VOLTAGE CONTROL IN A PLASMA REACTOR 有权
标题翻译：装置和方法射频去耦和偏置控制在等离子体反应器
公开(公告)号：EP1399944B1
公开(公告)日：2014-05-07
申请号：EP02744704.4
申请日：2002-06-27
申请人： LAM RESEARCH CORPORATION
发明人： FISCHER, Andreas
IPC分类号： H01J37/32
CPC分类号： H01J37/32091 , H01J37/32165 , H01J37/32174 , H01J37/32706

10. 发明公开

EP1765541A2 REDUCING PLASMA IGNITION PRESSURE 审中-公开
标题翻译：降低等离子点火压力
公开(公告)号：EP1765541A2
公开(公告)日：2007-03-28
申请号：EP05761079.2
申请日：2005-06-14
申请人： LAM RESEARCH CORPORATION
发明人： WIEPKING, Mark , LYNDAKER, Bradford J , KUTHI, Andras , FISCHER, Andreas
IPC分类号： B23K9/00 , B23K9/02
CPC分类号： H01J37/32009 , H01J37/32082 , H01J37/32706
摘要： A method in a plasma processing system for processing a semiconductor substrate is disclosed. The plasma processing system includes a plasma processing chamber and an electrostatic chuck coupled to a bias compensation circuit. The method includes igniting a plasma in a plasma ignition step. Plasma ignition step is performed while a first bias compensation voltage provided by the bias compensation circuit to the chuck is substantially zero and while a first chamber pressure within the plasma processing chamber is below about 90 mTorr. The method further includes processing the substrate in a substrate-processing step after the plasma is ignited. The substrate-processing step employs a second bias compensation voltage provided by the bias compensation circuit that is higher than the first bias compensation voltage and a second chamber pressure substantially equal to the first chamber pressure.
摘要翻译：公开了一种用于处理半导体衬底的等离子体处理系统中的方法。等离子体处理系统包括等离子体处理室和耦合到偏置补偿电路的静电吸盘。该方法包括在等离子体点火步骤中点燃等离子体。等离子体点火步骤在由偏置补偿电路提供给卡盘的第一偏置补偿电压基本为零并且等离子体处理室内的第一室压低于约90毫托时执行。该方法还包括在等离子体被点燃之后在衬底处理步骤中处理衬底。衬底处理步骤采用由偏置补偿电路提供的高于第一偏置补偿电压的第二偏置补偿电压以及基本上等于第一室压力的第二室压力。

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