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    • 7. 发明公开
    • Polishing method and polishing apparatus
    • 抛光方法和抛光装置
    • EP2586568A3
    • 2017-10-04
    • EP12007343.2
    • 2012-10-25
    • EBARA CORPORATION
    • Kimba, Toshifumi
    • B24B49/12B24B37/013B24B49/04B24B37/20
    • H01L22/26B24B37/013B24B37/20B24B49/04B24B49/12H01L21/30625
    • A polishing method capable of obtaining an accurate thickness of a silicon layer during polishing of a substrate and determining an accurate polishing end point of the substrate based on the thickness of the silicon layer obtained. The method includes: calculating relative reflectance by dividing the measured intensity of the infrared ray by predetermined reference intensity; producing spectral waveform representing relationship between the relative reflectance and wavelength of the infrared ray; performing a Fourier transform process on the spectral waveform to determine a thickness of the silicon layer and a corresponding strength of frequency component; and determining a polishing end point of the substrate based on a point of time when the determined thickness of the silicon layer has reached a predetermined target value.
    • 本发明提供一种研磨方法,该研磨方法能够在研磨基板时得到正确的硅层厚度,并且基于所得到的硅层的厚度来确定基板的精密研磨终点。 该方法包括:通过将测量的红外线的强度除以预定的参考强度来计算相对反射率; 产生代表红外线的相对反射率和波长之间关系的光谱波形; 对所述频谱波形执行傅里叶变换处理以确定所述硅层的厚度和相应的频率分量的强度; 以及基于所确定的硅层的厚度已经达到预定目标值的时间点来确定衬底的抛光终点。
    • 8. 发明公开
    • Polishing method and polishing apparatus
    • Polierverfahren und Poliervorrichtung
    • EP2586568A2
    • 2013-05-01
    • EP12007343.2
    • 2012-10-25
    • EBARA CORPORATION
    • Kimba, Toshifumi
    • B24B49/12B24B37/013
    • H01L22/26B24B37/013B24B37/20B24B49/04B24B49/12H01L21/30625
    • A polishing method capable of obtaining an accurate thickness of a silicon layer during polishing of a substrate and determining an accurate polishing end point of the substrate based on the thickness of the silicon layer obtained. The method includes: calculating relative reflectance by dividing the measured intensity of the infrared ray by predetermined reference intensity; producing spectral waveform representing relationship between the relative reflectance and wavelength of the infrared ray; performing a Fourier transform process on the spectral waveform to determine a thickness of the silicon layer and a corresponding strength of frequency component; and determining a polishing end point of the substrate based on a point of time when the determined thickness of the silicon layer has reached a predetermined target value.
    • 一种抛光方法,其能够在抛光基板期间获得准确的硅层厚度,并且基于获得的硅层的厚度确定基板的精确抛光终点。 该方法包括:通过将测量的红外线强度除以预定参考强度来计算相对反射率; 产生表示红外线的相对反射率和波长之间的关系的光谱波形; 对光谱波形执行傅立叶变换处理以确定硅层的厚度和相应的频率分量强度; 并且基于所确定的硅层的厚度达到预定目标值的时间点来确定衬底的抛光终点。