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1. 发明公开

EP1459353A2 SELF-IONIZED AND INDUCTIVELY-COUPLED PLASMA FOR SPUTTERING AND RESPUTTERING 审中-公开
标题翻译： SELBSTIONISIERTES和电感耦合等离子体溅射和再溅射
公开(公告)号：EP1459353A2
公开(公告)日：2004-09-22
申请号：EP02784777.1
申请日：2002-12-10
申请人： Applied Materials, Inc.
发明人： DING, Peijun , XU, Zheng , MOSELY, Roderick, C. , RENGARAJAN, Suraj , MAITY, Nirmalya , CARL, Daniel, A. , CHIN, Barry , SMITH, Paul, F. , ANGELO, Darryl , TOLIA, Anish , FU, Jianming , CHEN, Fusen , GOPALRAJA, Praburam , TANG, Xianmin , FORSTER, John, C.
IPC分类号： H01J37/34 , H01J37/32
CPC分类号： H01L21/76844 , C23C14/046 , C23C14/345 , C23C14/3457 , C23C14/358 , H01J37/321 , H01J37/3408 , H01J2237/3327 , H01L21/2855 , H01L21/76805 , H01L21/76846 , H01L21/76862 , H01L21/76864 , H01L21/76865 , H01L21/76868 , H01L21/76873 , H01L21/76877 , H01L2221/1089
摘要： A magnetron sputter reactor for sputtering deposition materials such as tantalum, tantalum nitride and copper, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and inductively coupled plasma (ICP) sputtering are promoted, either together or alternately, in the same chamber. Also, bottom coverage may be thinned or eliminated by ICP resputtering. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. ICP is provided by one or more RF coils which inductively couple RF energy into a plasma. The combined SIP-ICP layers can act as a liner or barrier or seed or nucleation layer for hole. In addition, an RF coil may be sputtered to provide protective material during ICP resputtering.

2. 发明公开

EP1095394A1 FEEDTHROUGH OVERLAP COIL 审中-公开
标题翻译：重叠接头COIL
公开(公告)号：EP1095394A1
公开(公告)日：2001-05-02
申请号：EP99932143.3
申请日：1999-06-30
申请人： APPLIED MATERIALS, INC.
发明人： GOPALRAJA, Praburam , XU, Zheng , ROSENSTEIN, Michael , FORSTER, John, C.
IPC分类号： H01J37/32
CPC分类号： H01J37/321
摘要： A coil for inductively coupling RF energy to a plasma in a substrate processing chamber has adjacent spaced and circumferentially overlapping RF feedthroughs adjacent to overlapping ends to improve uniformity of processing of the substrate.

3. 发明公开

EP0996762A2 METHOD FOR BIAS SPUTTERING 失效
标题翻译：方法FORGE强调喷涂
公开(公告)号：EP0996762A2
公开(公告)日：2000-05-03
申请号：EP98930445.6
申请日：1998-06-22
申请人： Applied Materials, Inc. , APPLIED SCIENCE & TECHNOLOGY, INC.
发明人： YAO, Tse-Yong , XU, Zheng , NGAN, Kenny, King-Tai , CHEN, Xing , URBAHN, John , BOURGET, Lawrence, P.
IPC分类号： C23C2/00
CPC分类号： H01L21/2855 , C23C14/046 , C23C14/34 , C23C14/357 , H01J37/32623 , H01J37/32678 , H01J37/32706 , H01J37/34 , H01L21/76877
摘要： The present invention provides a method and apparatus for preferential PVD conductor fill in an integrated circuit structure. The present invention utilizes a high density plasma for sputter deposition of a conductive layer on a patterned substrate, and a pulsed DC power source capacitively coupled to the substrate to generate an ion current at the surface of the substrate. The ion current prevents sticking of the deposited material to the field areas of the patterned substrate, or etches deposited material from the field areas to eliminate crowning or cusping problems associated with deposition of a conductive material in a trench, hole or via formed on the substrate.

4. 发明公开

EP1034566A1 DAMAGE-FREE SCULPTURED COATING DEPOSITION 审中-公开
标题翻译：破坏性涂法
公开(公告)号：EP1034566A1
公开(公告)日：2000-09-13
申请号：EP98956259.0
申请日：1998-10-26
申请人： Applied Materials, Inc.
发明人： CHIANG, Tony , YAO, Gongda , DING, Peijun , CHEN, Fusen , CHIN, Barry , KOHARA, Gene , XU, Zheng , ZHANG, Hong
IPC分类号： H01L21/768
CPC分类号： H01L21/76843 , C23C14/046 , C23C14/165 , H01L21/2855 , H01L21/76805 , H01L21/76844 , H01L21/76846 , H01L21/76862 , H01L21/76865 , H01L21/76871 , H01L21/76877 , H01L21/76879 , H01L21/76883
摘要： We disclose a method of applying a sculptured layer of material on a semiconductor feature surface using ion deposition sputtering, wherein a surface onto which the sculptured layer is applied is protected to resist erosion and contamination by impacting ions of a depositing layer, said method comprising the steps of: a) applying a first position of a sculptured layer with sufficiently low substrate bias that a surface onto which said sculptured layer is applied is not eroded away or contaminated in an amount which is harmful to said semiconductor device performance or longevity; and b) applying a subsequent portion of said sculptured layer with sufficiently high substrate bias to sculpture a shape from said first portion, while depositing additional layer material. The method is particularly applicable to the sculpturing of barrier layers, wetting layers, and conductive layers upon semiconductor feature surfaces and is especially helpful when the conductive layer is copper. In the application of a barrier layer, a first portion of barrier layer material is deposited on the substrate surface using standard sputtering techniques or using an ion deposition plasma, but in combination with sufficiently low substrate bias voltage (including at no applied substrate voltage) that the surfaces impacted by ions are not sputtered in an amount which is harmful to device performance or longevity. Subsequently, a second portion of barrier material is applied using ion deposition sputtering at increased substrate bias voltage which causes resputtering (sculpturing) of the first portion of barrier layer material, while enabling a more anisotropic deposition of newly depositing material. A conductive material, and particularly a copper seed layer applied to the feature may be accomplished using the same sculpturing technique as that described above with reference to the barrier layer.

5. 发明公开

EP1103073A1 METHOD OF FORMING METAL INTERCONNECTS 审中-公开
标题翻译： PROCESS FOR金属化合物
公开(公告)号：EP1103073A1
公开(公告)日：2001-05-30
申请号：EP99930599.8
申请日：1999-06-23
申请人： Applied Materials, Inc.
发明人： MAYDAN, Dan , SINHA, Ashok, K. , XU, Zheng , CHEN, Liang-Yuh , MOSELY, Roderick, Craig , CARL, Daniel , MA, Diana, Xiaobing , YE, Yan , TU, Wen, Chiang
IPC分类号： H01L21/768
CPC分类号： H01L21/76838 , H01L21/32136 , H01L21/76885
摘要： The present invention provides a method for forming reliable interconnects in which the overlap of the line over the plug or via is minimized or eliminated. In one aspect, a barrier plug comprised of a conductive material, such as tungsten, is deposited over the via to provide an etch stop during line etching and to prevent diffusion of the metal, such as copper, into the surrounding dielectric material if the line is misaligned over the via. Additionally, the barrier plug prevents an overall reduction in resistance of the interconnect and enables reactive ion etching to be employed to form the metal line. In another aspect, reactive ion etching techniques are employed to selectively etch the metal line and the barrier layer to provide a controlled etching process which exhibits selectivity for the metal line, then the barrier and then the via or plug.

6. 发明公开

EP1078389A1 REDUCTION OF METAL OXIDE IN DUAL FREQUENCY PLASMA ETCH CHAMBER 审中-公开
标题翻译： REDUCTION IN A两个频率的金属的等离子体蚀刻
公开(公告)号：EP1078389A1
公开(公告)日：2001-02-28
申请号：EP99923074.1
申请日：1999-05-14
申请人： Applied Materials, Inc.
发明人： COHEN, Barney, M. , HAUSMANN, Gilbert , PARKHE, Vijay , XU, Zheng
IPC分类号： H01J37/32 , C23C16/02
CPC分类号： H01J37/321 , H01J37/32165 , H01L21/31122
摘要： The invention generally provides an apparatus and a method of removing oxides, particularly copper oxides and aluminum oxides, from a substrate surface. Primarily, the invention eliminates sputtering of copper oxide from the bottom of an interconnect feature onto the side walls of an interconnect feature, thereby preventing diffusion of the copper atom through the dielectric material and degradation of the device. The invention also eliminates sputtering of the copper oxides onto the chamber side walls that may eventually flake off and cause defects on the substrate. The method of reducing metal oxides from a substrate surface comprises placing the substrate within a plasma processing chamber, flowing a processing gas comprising hydrogen into the chamber, and maintaining a plasma of the processing gas within the chamber through inductive coupling. The method is preferably performed using a dual frequency etch chamber wherein adjustments are made in the processing gas flow, the RF powers and the exhaust pumping speeds to eliminate sputtering of the copper oxide and to maximize the reduction reaction.

7. 发明公开

EP0990251A2 CENTRAL COIL DESIGN FOR IONIZED METAL PLASMA DEPOSITION 失效
标题翻译：中央卷材涂料用于使用电离金属等离子体实现
公开(公告)号：EP0990251A2
公开(公告)日：2000-04-05
申请号：EP98922371.4
申请日：1998-05-13
申请人： Applied Materials, Inc.
发明人： HONG, Liubo , WANG, Hougong , YAO, Gongda , XU, Zheng
IPC分类号： H01J37/00
CPC分类号： H01J37/321 , H01J37/34 , H01J2237/3323
摘要： In a plasma generating apparatus, a coil is positioned between a target and a workpiece to inductively couple RF energy into a plasma so that the paths of a portion of the ionized deposition material are deflected from the center of the workpiece and toward the edges of the workpiece. As a consequence, it has been found that the uniformity of deposition may be improved. In the illustrated embodiment, the coil is a multi-turn coil formed in a generally planar spiral centered in the stream of deposition material.

8. 发明公开

EP0845151A1 RECESSED COIL FOR GENERATING A PLASMA 失效
标题翻译： RECESSED线圈产生等离子体
公开(公告)号：EP0845151A1
公开(公告)日：1998-06-03
申请号：EP97925528.0
申请日：1997-05-08
申请人： Applied Materials, Inc.
发明人： SUBRAMANI, Anantha , FORSTER, John , STIMSON, Bradley, O. , EDELSTEIN, Sergio , GRUNES, Howard , TEPMAN, Avi , XU, Zheng
IPC分类号： H05H1 , C23C14 , C23C16 , H01J37 , H01L21
CPC分类号： H01J37/32504 , H01J37/321 , H01J37/32623 , H01J37/32651 , H01J37/34
摘要： A recessed coil for a plasma chamber in a semiconductor fabrication system is provided. Recessing the coil reduces deposition of material onto the coil which in turn leads to a reduction in particulate matter shed by the coil onto the workpiece.

9. 发明公开

EP0788145A2 Titanium aluminide wetting layer for aluminum contacts 失效
标题翻译： Titanaluminid-BenetzungsschichtfürAluminum-Kontakte
公开(公告)号：EP0788145A2
公开(公告)日：1997-08-06
申请号：EP97101630.8
申请日：1997-02-03
申请人： APPLIED MATERIALS, INC.
发明人： Yao, Gongda , XU, Zheng , Kieu, Hoa
IPC分类号： H01L21/285
CPC分类号： H01L21/76843
摘要： An improved aluminum contact and method of forming it in an opening (12) in a substrate comprising sputter depositing a titanium aluminide wetting layer (16) in the opening (12) and depositing an aluminum layer (18) thereover. The titanium aluminide wetting layer (16) has a controlled thickness.
摘要翻译：一种改进的铝接触及其在衬底的开口（12）中形成的方法，包括在开口（12）中溅射沉积钛铝化物润湿层（16）并在其上沉积铝层（18）。钛铝化物润湿层（16）具有受控的厚度。

10. 发明公开

EP1007759A1 MODULATED POWER FOR IONIZED METAL PLASMA DEPOSITION 审中-公开
标题翻译：等离子体气相分离调制式SPULENZERSTÄUBUNGSLEISTUNGFOR IIONISERTE金属等离子体沉积
公开(公告)号：EP1007759A1
公开(公告)日：2000-06-14
申请号：EP98939263.4
申请日：1998-08-06
申请人： APPLIED MATERIALS, INC.
发明人： GOPALRAJA, Praburam , FORSTER, John, C. , XU, Zheng , STIMSON, Bardley, O.
IPC分类号： C23C14/40 , H01J37/34 , H01J37/32
CPC分类号： C23C14/345 , C23C14/35 , C23C14/358 , H01J37/321 , H01J37/32174 , H01J37/34
摘要： In a plasma deposition system for depositing a film of sputtered target material on a substrate, the output of an RF generator coupled to a coil for generating a plasma can be varied during the deposition process so that heating and sputtering of the RF coil can be more uniform by 'time-averaging' RF voltage distributions along the RF coil. In another embodiment, RF energy applied to a coil positioned to sputter material onto a workpiece, is modulated to control the biasing of the coil. As a consequence, control of coil sputtering may be improved such that the uniformity of deposition may also be improved.

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